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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 16MLPQ
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 200V
- Rise / Fall Time (Typ): 70ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-VFQFN Exposed Pad
- Supplier Device Package: 16-MLPQ (4x4)
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Package: 16-VFQFN Exposed Pad |
Stock7,856 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 200V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-VFQFN Exposed Pad | 16-MLPQ (4x4) |
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Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 28-DIP
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 11.5 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 125ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 28-DIP (0.600", 15.24mm)
- Supplier Device Package: 28-DIP
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Package: 28-DIP (0.600", 15.24mm) |
Stock32,340 |
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3-Phase | 6 | IGBT, N-Channel MOSFET | 11.5 V ~ 20 V | 0.8V, 3V | 200mA, 350mA | Inverting, Non-Inverting | 600V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 28-DIP (0.600", 15.24mm) | 28-DIP |
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ON Semiconductor |
IC MOSFET DRIVER DUAL 12V 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.6 V ~ 13.2 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 30V
- Rise / Fall Time (Typ): 16ns, 11ns
- Operating Temperature: 0°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock71,520 |
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Synchronous | 2 | N-Channel MOSFET | 4.6 V ~ 13.2 V | 0.8V, 2V | - | Non-Inverting | 30V | 16ns, 11ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Intersil |
IC MOSFET DRVR SYNC BUCK 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,184 |
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Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC COMPLEMENT SW FET DRVR 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 7 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 500mA, 1A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 30ns, 25ns
- Operating Temperature: 0°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,560 |
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Synchronous | 2 | N-Channel, P-Channel MOSFET | 7 V ~ 20 V | 0.8V, 2V | 500mA, 1A | Non-Inverting | - | 30ns, 25ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL HS MOSFET DRVR 8-TSSOP
- Driven Configuration: Low-Side
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4 V ~ 14 V
- Logic Voltage - VIL, VIH: 1V, 4V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 14ns, 15ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock5,904 |
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Synchronous | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 14 V | 1V, 4V | 2A, 2A | Inverting | - | 14ns, 15ns | -40°C ~ 125°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Microchip Technology |
IC MOSFET DVR 1A HS N-INV 8SOIC
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 16 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 1A, 1A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 25ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,136 |
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Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 16 V | 0.8V, 2V | 1A, 1A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8UMAX
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4 V ~ 14 V
- Logic Voltage - VIL, VIH: 0.8V, 2.1V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 40ns, 25ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package: 8-uMax-EP
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad |
Stock3,664 |
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Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2.1V | 4A, 4A | Inverting, Non-Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-uMax-EP |
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Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8-MLF
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 1.5A, 1.5A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 18ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VFDFN Exposed Pad, 8-MLF?
- Supplier Device Package: 8-MLF? (2x2)
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Package: 8-VFDFN Exposed Pad, 8-MLF? |
Stock2,656 |
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Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 20ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-VFDFN Exposed Pad, 8-MLF? | 8-MLF? (2x2) |
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Power Integrations |
IC DUAL GATE DRIVER 20A
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT
- Voltage - Supply: 14.5 V ~ 15.5 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 20A, 20A
- Input Type: -
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 7ns, 25ns
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock15,588 |
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Independent | 2 | IGBT | 14.5 V ~ 15.5 V | - | 20A, 20A | - | 1200V | 7ns, 25ns | -40°C ~ 85°C (TA) | - | - | - |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 600V 8-DIP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.7V, 2.3V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 70ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock6,588 |
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Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.7V, 2.3V | 290mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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Texas Instruments |
IC GATE DRIVER 3-PHASE
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.4 V ~ 45 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 1A, 1A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 48-TQFP Exposed Pad
- Supplier Device Package: 48-HTQFP (7x7)
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Package: 48-TQFP Exposed Pad |
Stock6,240 |
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3-Phase | 6 | N-Channel MOSFET | 4.4 V ~ 45 V | 0.8V, 2V | 1A, 1A | Non-Inverting | - | - | -40°C ~ 175°C (TJ) | Surface Mount | 48-TQFP Exposed Pad | 48-HTQFP (7x7) |
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Texas Instruments |
IC GATE DRIVER 8SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 9 V ~ 14 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 1.6A, 1.6A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 118V
- Rise / Fall Time (Typ): 600ns, 600ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,528 |
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Synchronous | 2 | N-Channel MOSFET | 9 V ~ 14 V | 0.8V, 2V | 1.6A, 1.6A | Non-Inverting | 118V | 600ns, 600ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Diodes Incorporated |
IC GATE DVR HV 10-WDFN
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 100V
- Rise / Fall Time (Typ): 70ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-WFDFN Exposed Pad
- Supplier Device Package: W-DFN3030-10
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Package: 10-WFDFN Exposed Pad |
Stock3,216 |
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Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 100V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | W-DFN3030-10 |
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ON Semiconductor |
IC MOSFET DRIVER DUAL HS 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 6.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.6V
- Current - Peak Output (Source, Sink): 1.5A, 1.5A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 31ns, 32ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock928,476 |
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Independent | 2 | N-Channel MOSFET | 6.5 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Inverting | - | 31ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC GATE DRVR HALF BRDG 5A 12SMD
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 5.5 V
- Logic Voltage - VIL, VIH: 1.76V, 1.89V
- Current - Peak Output (Source, Sink): 1.2A, 5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 107V
- Rise / Fall Time (Typ): 7ns, 1.5ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 12-WFBGA, DSBGA
- Supplier Device Package: 12-DSBGA
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Package: 12-WFBGA, DSBGA |
Stock5,136 |
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Independent | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 1.76V, 1.89V | 1.2A, 5A | Non-Inverting | 107V | 7ns, 1.5ns | -40°C ~ 125°C (TJ) | Surface Mount | 12-WFBGA, DSBGA | 12-DSBGA |
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Texas Instruments |
AUTOMOTIVE 4-A, 6-A, 3.0-KV(RMS)
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 3 V ~ 5.5 V
- Logic Voltage - VIL, VIH: 1.25V, 1.6V
- Current - Peak Output (Source, Sink): 4A, 6A
- Input Type: CMOS/TTL
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 5ns, 6ns
- Operating Temperature: -40°C ~ 150°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.154", 3.90mm Width) |
Stock7,020 |
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Independent | 2 | IGBT, N-Channel MOSFET | 3 V ~ 5.5 V | 1.25V, 1.6V | 4A, 6A | CMOS/TTL | - | 5ns, 6ns | -40°C ~ 150°C (TA) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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ON Semiconductor |
IC GATE DVR LOW DUAL 2A HS 8MLP
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 3A, 3A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 12ns, 9ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-MLP (3x3)
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Package: 8-WDFN Exposed Pad |
Stock4,704 |
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Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Inverting, Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-MLP (3x3) |
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Renesas Electronics America |
IC DRVR DUAL SYNC BUCK 16-QFN
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 4
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: 0°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-VQFN Exposed Pad
- Supplier Device Package: 16-QFN (4x4)
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Package: 16-VQFN Exposed Pad |
Stock4,096 |
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Synchronous | 4 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 16-VQFN Exposed Pad | 16-QFN (4x4) |
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Renesas Electronics America |
IC DRVR DUAL SYNC BUCK 16-QFN
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 4
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: 0°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-VQFN Exposed Pad
- Supplier Device Package: 16-QFN (4x4)
|
Package: 16-VQFN Exposed Pad |
Stock7,744 |
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Synchronous | 4 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 16-VQFN Exposed Pad | 16-QFN (4x4) |
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Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,592 |
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Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 10-DFN
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 7 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-VFDFN Exposed Pad
- Supplier Device Package: 10-DFN (3x3)
|
Package: 10-VFDFN Exposed Pad |
Stock5,424 |
|
Synchronous | 2 | N-Channel MOSFET | 7 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 10-DFN
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-VFDFN Exposed Pad
- Supplier Device Package: 10-DFN (3x3)
|
Package: 10-VFDFN Exposed Pad |
Stock5,040 |
|
Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 8EPSOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock7,520 |
|
Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Renesas Electronics America |
IC DVR PIN 40MHZ 3STATE 8-SOIC
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT
- Voltage - Supply: 4.5 V ~ 16.5 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 3.5A, 3.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 14.5ns, 15ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,600 |
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Single | 1 | IGBT | 4.5 V ~ 16.5 V | 0.8V, 2.4V | 3.5A, 3.5A | Non-Inverting | - | 14.5ns, 15ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
2ED2778S01GXTMA1
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 7V ~ 18V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 4A, 8A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 140 V
- Rise / Fall Time (Typ): 24ns, 12ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 10-VFDFN Exposed Pad
- Supplier Device Package: PG-VSON-10-5
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Package: - |
Request a Quote |
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Independent | 2 | N-Channel MOSFET | 7V ~ 18V | 0.8V, 2V | 4A, 8A | Non-Inverting | 140 V | 24ns, 12ns | -40°C ~ 125°C (TA) | Surface Mount | 10-VFDFN Exposed Pad | PG-VSON-10-5 |
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Monolithic Power Systems Inc. |
100V, 8A, HIGH FREQUENCY HALF-BR
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 5V ~ 17V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 7A, 8A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 120 V
- Rise / Fall Time (Typ): 7.2ns, 5.5ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-VDFN Exposed Pad
- Supplier Device Package: 10-QFN (4x4)
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Package: - |
Stock14,220 |
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Independent | 2 | N-Channel MOSFET | 5V ~ 17V | - | 7A, 8A | Non-Inverting | 120 V | 7.2ns, 5.5ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VDFN Exposed Pad | 10-QFN (4x4) |
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onsemi |
IC GATE DRVR DUAL 4A HI/LO SPEED
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5V ~ 18V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 10.6A, 11.4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 23ns, 19ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: - |
Stock3,255 |
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Single | 1 | N-Channel MOSFET | 4.5V ~ 18V | - | 10.6A, 11.4A | Non-Inverting | - | 23ns, 19ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |