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Vishay Siliconix |
IC MOSFET DVR ADAPTIVE PWR 8DIP
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 16.5 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1A, 1A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 500V
- Rise / Fall Time (Typ): 50ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock6,912 |
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Single | 1 | N-Channel MOSFET | 10.8 V ~ 16.5 V | - | 1A, 1A | Non-Inverting | 500V | 50ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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IXYS |
IC MOSFET DRVR 9A LOSIDE 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 35 V
- Logic Voltage - VIL, VIH: 0.8V, 3.5V
- Current - Peak Output (Source, Sink): 9A, 9A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 10ns, 10ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock58,440 |
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Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3.5V | 9A, 9A | Non-Inverting | - | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC DRIVER MOSF QUAD 1.2A 16SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 4
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 1.2A, 1.2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 14ns, 13ns
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.295", 7.50mm Width) |
Stock13,020 |
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Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Non-Inverting | - | 14ns, 13ns | 0°C ~ 70°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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IXYS |
IC HIGH SIDE DRIVER 16SOIC
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 1V, 3.65V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 15ns, 15ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.295", 7.50mm Width) |
Stock6,688 |
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Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 10 V ~ 20 V | 1V, 3.65V | 2A, 2A | Non-Inverting | 1200V | 15ns, 15ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 1.5A 16SOIC
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4 V ~ 6 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 1.5A, 1.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 33ns, 27ns
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.295", 7.50mm Width) |
Stock2,768 |
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Single | 1 | N-Channel, P-Channel MOSFET | 4 V ~ 6 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 33ns, 27ns | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Maxim Integrated |
IC MOSFET DVR 4A 20NS DL 8-TDFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4 V ~ 15 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 32ns, 26ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-TDFN-EP (3x3)
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Package: 8-WDFN Exposed Pad |
Stock5,456 |
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Independent | 2 | N-Channel MOSFET | 4 V ~ 15 V | - | 4A, 4A | Inverting, Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) |
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Microchip Technology |
IC MOSFET DVR 12A HS 8DFN
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 13A, 13A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 30ns, 32ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-DFN-S (6x5)
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Package: 8-VDFN Exposed Pad |
Stock20,184 |
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Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 13A, 13A | Inverting | - | 30ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
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Microchip Technology |
IC MOSFET DVR 32V NONINV 8SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 32 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 2.5A, 2.5A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 120ns, 45ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock2,688 |
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Independent | 2 | N-Channel MOSFET | 4.5 V ~ 32 V | 0.8V, 2.4V | 2.5A, 2.5A | Inverting, Non-Inverting | - | 120ns, 45ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Texas Instruments |
IC GATE DRVR HALF BRDG 5A 12SMD
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 5.5 V
- Logic Voltage - VIL, VIH: 1.76V, 1.89V
- Current - Peak Output (Source, Sink): 1.2A, 5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 107V
- Rise / Fall Time (Typ): 7ns, 1.5ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 12-WFBGA, DSBGA
- Supplier Device Package: 12-DSBGA
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Package: 12-WFBGA, DSBGA |
Stock4,288 |
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Independent | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 1.76V, 1.89V | 1.2A, 5A | Non-Inverting | 107V | 7ns, 1.5ns | -40°C ~ 125°C (TJ) | Surface Mount | 12-WFBGA, DSBGA | 12-DSBGA |
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Microchip Technology |
IC MOSFET DVR 3A DUAL HS 8SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 4.5A, 4.5A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 12ns, 12ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,072 |
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Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 4.5A, 4.5A | Inverting | - | 12ns, 12ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 3A DUAL HS 8DFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 3A, 3A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 23ns, 25ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-DFN-S (6x5)
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Package: 8-VDFN Exposed Pad |
Stock4,096 |
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Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 3A, 3A | Inverting, Non-Inverting | - | 23ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
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IXYS Integrated Circuits Division |
2A MOSFET 8 DIP DUAL INV/NON-INV
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 35 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 7.5ns, 6.5ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock34,056 |
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Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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Microchip Technology |
IC MOSFET DRIVER 2A 8DFN-S
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 12ns, 15ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-DFN-S (6x5)
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Package: 8-VDFN Exposed Pad |
Stock6,960 |
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Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 2A, 2A | Inverting | - | 12ns, 15ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
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Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT26
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, SiC MOSFET
- Voltage - Supply: 40V (Max)
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 10A, 10A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 48ns, 35ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
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Package: SOT-23-6 |
Stock2,192 |
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Single | 1 | IGBT, SiC MOSFET | 40V (Max) | - | 10A, 10A | Non-Inverting | - | 48ns, 35ns | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 |
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Microchip Technology |
IC MOSFET DVR 3A HS 8DIP
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 16 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 3A, 3A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: 0°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock226,428 |
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Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 16 V | 0.8V, 2V | 3A, 3A | Non-Inverting | - | 20ns, 20ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC MOSFET DVR 12A HS TO220-5
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 13A, 13A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 30ns, 32ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-5
- Supplier Device Package: TO-220-5
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Package: TO-220-5 |
Stock27,780 |
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Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 13A, 13A | Non-Inverting | - | 30ns, 32ns | -40°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Texas Instruments |
IC GATE DRIVER FET/IGBT 8SOIC
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 32 V
- Logic Voltage - VIL, VIH: 1.2V, 2.2V
- Current - Peak Output (Source, Sink): 2.5A, 5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 15ns, 7ns
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock13,128 |
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Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 32 V | 1.2V, 2.2V | 2.5A, 5A | Non-Inverting | - | 15ns, 7ns | -40°C ~ 140°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HI/LO SIDE 600V 14-DIP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 22ns, 18ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: 14-DIP
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Package: 14-DIP (0.300", 7.62mm) |
Stock6,528 |
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Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 4A, 4A | Non-Inverting | 600V | 22ns, 18ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
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Fairchild/ON Semiconductor |
IC GATE DVR DUAL 4A 8-MLP
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 5A, 5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 12ns, 9ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-MLP (3x3)
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Package: 8-WDFN Exposed Pad |
Stock162,816 |
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Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 5A, 5A | Non-Inverting | - | 12ns, 9ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-MLP (3x3) |
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Fairchild/ON Semiconductor |
IC GATE DVR LOSIDE DUAL 2A 8SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 3A, 3A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 12ns, 9ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock22,080 |
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Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics America |
IC DVR MOSFET N-CH 3PHASE 24SOIC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 7 V ~ 15 V
- Logic Voltage - VIL, VIH: 1V, 2.5V
- Current - Peak Output (Source, Sink): 500mA, 500mA
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 95V
- Rise / Fall Time (Typ): 20ns, 10ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 24-SOIC
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Package: 24-SOIC (0.295", 7.50mm Width) |
Stock39,276 |
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3-Phase | 6 | N-Channel MOSFET | 7 V ~ 15 V | 1V, 2.5V | 500mA, 500mA | Inverting, Non-Inverting | 95V | 20ns, 10ns | -40°C ~ 150°C (TJ) | Surface Mount | 24-SOIC (0.295", 7.50mm Width) | 24-SOIC |
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ON Semiconductor |
IC GATE DVR LOW DUAL 2A HS 8SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 3A, 3A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 12ns, 9ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,648 |
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Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 3A, 3A | Inverting, Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
INTEGRATED CIRCUIT
- Driven Configuration: -
- Channel Type: -
- Number of Drivers: -
- Gate Type: -
- Voltage - Supply: -
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: -
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,904 |
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- | - | - | - | - | - | - | - | - | - | - | - | - |
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Linear Technology |
IC POWER MANAGEMENT
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4 V ~ 6.5 V
- Logic Voltage - VIL, VIH: 3V, 6.5V
- Current - Peak Output (Source, Sink): 3.2A, 4.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 42V
- Rise / Fall Time (Typ): 8ns, 7ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-DFN (2x3)
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Package: 8-WFDFN Exposed Pad |
Stock7,152 |
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Synchronous | 2 | N-Channel MOSFET | 4 V ~ 6.5 V | 3V, 6.5V | 3.2A, 4.5A | Non-Inverting | 42V | 8ns, 7ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-WFDFN Exposed Pad | 8-DFN (2x3) |
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Power Integrations |
MOD GATE DVR 2MBI800U4G-120
- Driven Configuration: -
- Channel Type: -
- Number of Drivers: -
- Gate Type: -
- Voltage - Supply: -
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: -
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,100 |
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Analog Devices Inc. |
ISO 1/2 BRIDGE DRV W/DEADTIME UV
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT
- Voltage - Supply: 2.5V ~ 6.5V
- Logic Voltage - VIL, VIH: 1.5V, 3.5V
- Current - Peak Output (Source, Sink): 4A, 6A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 30ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: - |
Stock2,880 |
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Synchronous | 2 | IGBT | 2.5V ~ 6.5V | 1.5V, 3.5V | 4A, 6A | Non-Inverting | - | 25ns, 30ns | -40°C ~ 125°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Tamura |
GATE DRIVER UNIT FOR FUJI ELECTR
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 4
- Gate Type: IGBT
- Voltage - Supply: 13V ~ 28V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 1200 V
- Rise / Fall Time (Typ): -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Request a Quote |
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Synchronous | 4 | IGBT | 13V ~ 28V | - | - | Non-Inverting | 1200 V | - | -40°C ~ 85°C (TA) | Chassis Mount | Module | Module |
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Monolithic Power Systems Inc. |
100V, 4A, HIGH-FREQUENCY HALF-BR
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8V ~ 15V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 4A, 5.9A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 115 V
- Rise / Fall Time (Typ): 15ns, 10ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-QFN (4x4)
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Package: - |
Request a Quote |
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Independent | 2 | N-Channel MOSFET | 8V ~ 15V | - | 4A, 5.9A | Non-Inverting | 115 V | 15ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-QFN (4x4) |