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Infineon Technologies |
IC DRIVER HIGH/LOW DRIVER 8-DIP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.7V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 150ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock4,624 |
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Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 200mA, 350mA | Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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Maxim Integrated |
IC MOSFET DRIVER 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 12.6 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 125V
- Rise / Fall Time (Typ): 65ns, 65ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock3,392 |
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Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | - | 2A, 2A | Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Intersil |
IC MOSFET DRVR SYNC BUCK 10-DFN
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-VFDFN Exposed Pad
- Supplier Device Package: 10-DFN (3x3)
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Package: 10-VFDFN Exposed Pad |
Stock7,984 |
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Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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Microchip Technology |
IC DRIVER MOSFET 9A LS 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 9A, 9A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 24ns
- Operating Temperature: 0°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,112 |
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Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 9A, 9A | Non-Inverting | - | 20ns, 24ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Intersil |
IC DRIVER FULL BRIDGE FET 20SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 4
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 9.5 V ~ 15 V
- Logic Voltage - VIL, VIH: 1V, 2.5V
- Current - Peak Output (Source, Sink): 2.6A, 2.4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 95V
- Rise / Fall Time (Typ): 10ns, 10ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 20-SOIC
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Package: 20-SOIC (0.295", 7.50mm Width) |
Stock6,624 |
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Synchronous | 4 | N-Channel MOSFET | 9.5 V ~ 15 V | 1V, 2.5V | 2.6A, 2.4A | Non-Inverting | 95V | 10ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount | 20-SOIC (0.295", 7.50mm Width) | 20-SOIC |
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Intersil |
IC MOSFET DRVR SYNC BUCK 8EPSOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: 0°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock124,668 |
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Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Microchip Technology |
IC MOSFET DVR 85V FULL BRIDGE
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 4
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 5.25 V ~ 16 V
- Logic Voltage - VIL, VIH: 0.8V, 2.2V
- Current - Peak Output (Source, Sink): 1A, 1A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 108V
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-VQFN Exposed Pad
- Supplier Device Package: 16-QFN (4x4)
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Package: 16-VQFN Exposed Pad |
Stock3,200 |
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Synchronous | 4 | N-Channel MOSFET | 5.25 V ~ 16 V | 0.8V, 2.2V | 1A, 1A | Non-Inverting | 108V | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 16-VQFN Exposed Pad | 16-QFN (4x4) |
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Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8UMAX
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4 V ~ 14 V
- Logic Voltage - VIL, VIH: 0.8V, 2.1V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 40ns, 25ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package: 8-uMax-EP
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad |
Stock6,384 |
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Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2.1V | 4A, 4A | Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-uMax-EP |
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ON Semiconductor |
IC MOSFET DVR SYNC BUCK 8DFN
- Driven Configuration: -
- Channel Type: -
- Number of Drivers: -
- Gate Type: -
- Voltage - Supply: -
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: -
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,520 |
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- | - | - | - | - | - | - | - | - | - | - | - | - |
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Fairchild/ON Semiconductor |
IC GATE DVR MONO HI/LO 16SOP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 4.5V, 9.5V
- Current - Peak Output (Source, Sink): 3A, 3A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 25ns, 20ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOP
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Package: 16-SOIC (0.295", 7.50mm Width) |
Stock47,580 |
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Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 4.5V, 9.5V | 3A, 3A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOP |
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Maxim Integrated |
IC DRVR MOSFET DUAL 8-DIP
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 1.5A, 1.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 25ns
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock4,032 |
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Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 25ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DVR HI/LO SIDE 16-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 12 V ~ 20 V
- Logic Voltage - VIL, VIH: 6V, 9.5V
- Current - Peak Output (Source, Sink): 2A, 2.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 25ns, 17ns
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.295", 7.50mm Width) |
Stock114,600 |
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Independent | 2 | IGBT, N-Channel MOSFET | 12 V ~ 20 V | 6V, 9.5V | 2A, 2.5A | Non-Inverting | 1200V | 25ns, 17ns | 125°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Infineon Technologies |
IC GATE DRVR 8SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 20 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 5A, 5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 5.3ns, 4.5ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8-60
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,096 |
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Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | - | 5A, 5A | Non-Inverting | - | 5.3ns, 4.5ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8-60 |
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Microchip Technology |
IC GATE DRVR HALF-BRIDGE 28SOIC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.2V
- Current - Peak Output (Source, Sink): 1A, 1A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 28-SOIC
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Package: 28-SOIC (0.295", 7.50mm Width) |
Stock3,872 |
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3-Phase | 6 | IGBT, N-Channel, P-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.2V | 1A, 1A | Non-Inverting | 600V | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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Diodes Incorporated |
IC GATE DRVR HV SO8
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 70ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,552 |
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Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Linear Technology |
IC MOSFET DRIVER N-CH 8-MSOP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 13.5 V
- Logic Voltage - VIL, VIH: 1.85V, 3.25V
- Current - Peak Output (Source, Sink): 2.5A, 3A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 114V
- Rise / Fall Time (Typ): 8ns, 5ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package: 8-MSOP-EP
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad |
Stock50,940 |
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Independent | 2 | N-Channel MOSFET | 4.5 V ~ 13.5 V | 1.85V, 3.25V | 2.5A, 3A | Inverting | 114V | 8ns, 5ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-EP |
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Power Integrations |
MODULE GATE DVR P&P SCALE 1
- Driven Configuration: -
- Channel Type: -
- Number of Drivers: -
- Gate Type: -
- Voltage - Supply: -
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: -
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,480 |
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- | - | - | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics America |
IC DRIVER DUAL SYNC BUCK 16-QFN
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 4
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-VQFN Exposed Pad
- Supplier Device Package: 16-QFN (4x4)
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Package: 16-VQFN Exposed Pad |
Stock7,744 |
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Synchronous | 4 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 16-VQFN Exposed Pad | 16-QFN (4x4) |
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Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 8EPSOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 7 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock7,872 |
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Synchronous | 2 | N-Channel MOSFET | 7 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Microchip Technology |
MOSFET DRVR 4.5A DUAL HS 16SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5V ~ 18V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 15ns, 18ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
|
Package: 16-SOIC (0.154", 3.90mm Width) |
Stock2,736 |
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Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 4A, 4A | Inverting, Non-Inverting | - | 15ns, 18ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Power Integrations |
IGBT DRIVER P/P 1CH COATING
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT
- Voltage - Supply: 15.5V ~ 16.8V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 6A, 10A
- Input Type: -
- High Side Voltage - Max (Bootstrap): 680 V
- Rise / Fall Time (Typ): 100ns, 100ns
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: - |
Request a Quote |
|
Single | 1 | IGBT | 15.5V ~ 16.8V | - | 6A, 10A | - | 680 V | 100ns, 100ns | -40°C ~ 85°C | Chassis Mount | Module | Module |
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Power Integrations |
IGBT DRIVER P/P 1CH COATING
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT
- Voltage - Supply: 15.5V ~ 16.8V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 6A, 10A
- Input Type: -
- High Side Voltage - Max (Bootstrap): 1200 V
- Rise / Fall Time (Typ): 100ns, 100ns
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: - |
Request a Quote |
|
Single | 1 | IGBT | 15.5V ~ 16.8V | - | 6A, 10A | - | 1200 V | 100ns, 100ns | -40°C ~ 85°C | Chassis Mount | Module | Module |
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3PEAK |
HIGH-SPEED LOW-SIDE DRIVER IC 8
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5V ~ 23V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 5A, 5A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 7ns, 6ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package: 8-EMSOP
|
Package: - |
Request a Quote |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 23V | - | 5A, 5A | Inverting | - | 7ns, 6ns | -40°C ~ 125°C (TA) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-EMSOP |
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Microchip Technology |
IC MOSFET DVR 3A L-SIDE 8SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5V ~ 20V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 3A, 3A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 11ns, 11ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock1,386 |
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Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 20V | 0.8V, 2.4V | 3A, 3A | Inverting | - | 11ns, 11ns | -40°C ~ 125°C (TJ) | - | - | - |
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Analog Devices Inc. |
IC GATE DRVR HIGH-SIDE 10MSOP
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 3.5V ~ 15V
- Logic Voltage - VIL, VIH: 1.8V, 1.7V
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 135 V
- Rise / Fall Time (Typ): 90ns, 40ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package: 10-MSOP-EP
|
Package: - |
Request a Quote |
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Single | 1 | N-Channel MOSFET | 3.5V ~ 15V | 1.8V, 1.7V | - | Non-Inverting | 135 V | 90ns, 40ns | -55°C ~ 150°C (TJ) | Surface Mount | 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad | 10-MSOP-EP |
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Infineon Technologies |
IC HVIC 8DSOP
- Driven Configuration: -
- Channel Type: -
- Number of Drivers: -
- Gate Type: -
- Voltage - Supply: -
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: -
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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onsemi |
INTEGRATED DRIVER & MOSFET
- Driven Configuration: High-Side and Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5V ~ 5.5V
- Logic Voltage - VIL, VIH: 0.85V, 2.3V
- Current - Peak Output (Source, Sink): 80A, 80A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 17ns, 26ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 39-PowerWFQFN
- Supplier Device Package: 39-WQFNW (5x6)
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Package: - |
Request a Quote |
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Single | 1 | N-Channel MOSFET | 4.5V ~ 5.5V | 0.85V, 2.3V | 80A, 80A | Non-Inverting | - | 17ns, 26ns | -40°C ~ 125°C (TA) | Surface Mount | 39-PowerWFQFN | 39-WQFNW (5x6) |
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Infineon Technologies |
DRIVER IC PG-DSO-8
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5V ~ 20V
- Logic Voltage - VIL, VIH: 1.4V, 1.9V
- Current - Peak Output (Source, Sink): 5A, 5A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 8.6ns, 6ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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Package: - |
Stock7,500 |
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Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 20V | 1.4V, 1.9V | 5A, 5A | Inverting | - | 8.6ns, 6ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |