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Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 28-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.2V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 80ns, 40ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 28-SOIC
|
Package: 28-SOIC (0.295", 7.50mm Width) |
Stock3,440 |
|
Independent | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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Texas Instruments |
IC GATE DRVR HALF-BRIDGE 48HTQFP
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.4 V ~ 45 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 1A, 1A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 48-TQFP Exposed Pad
- Supplier Device Package: 48-HTQFP (7x7)
|
Package: 48-TQFP Exposed Pad |
Stock4,096 |
|
3-Phase | 6 | N-Channel MOSFET | 4.4 V ~ 45 V | 0.8V, 2V | 1A, 1A | Non-Inverting | - | - | -40°C ~ 175°C (TJ) | Surface Mount | 48-TQFP Exposed Pad | 48-HTQFP (7x7) |
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Texas Instruments |
IC DVR HALF-BRIDGE 100V 1A 8SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 14 V
- Logic Voltage - VIL, VIH: 0.8V, 2.2V
- Current - Peak Output (Source, Sink): 1A, 1A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 118V
- Rise / Fall Time (Typ): 15ns, 15ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock18,600 |
|
Independent | 2 | N-Channel MOSFET | 8 V ~ 14 V | 0.8V, 2.2V | 1A, 1A | Non-Inverting | 118V | 15ns, 15ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Fairchild/ON Semiconductor |
IC GATE DVR HALF BRIDGE 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 2.5A, 2.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 25ns, 20ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,136 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 2.5A, 2.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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IXYS |
IC GATE DRIVER SGL 9A 6-DFN
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 9A, 9A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 23ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VDFN Exposed Pad
- Supplier Device Package: 6-DFN (4x5)
|
Package: 6-VDFN Exposed Pad |
Stock3,312 |
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Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 9A, 9A | Non-Inverting | - | 25ns, 23ns | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-DFN (4x5) |
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IXYS |
IC GATE DRIVER DUAL 2A 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 7.5ns, 6.5ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock37,236 |
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Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC DRIVER MOSF HI/LOW SIDE 8SOIC
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 2.75 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): -
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,008 |
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Single | 1 | N-Channel MOSFET | 2.75 V ~ 30 V | 0.8V, 2V | - | Inverting | - | - | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC DRIVER MOSFET DUAL 4A 8SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 6.5 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 25V
- Rise / Fall Time (Typ): 8ns, 14ns
- Operating Temperature: -30°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,780 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 6.5 V | 0.8V, 2V | 4A, 4A | Inverting, Non-Inverting | 25V | 8ns, 14ns | -30°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC DVR QUAD HISIDE MOSFET 18SOIC
- Driven Configuration: High-Side
- Channel Type: Independent
- Number of Drivers: 4
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 16.5 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 1.7µs, 2.5µs
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 18-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 18-SOIC
|
Package: 18-SOIC (0.295", 7.50mm Width) |
Stock16,560 |
|
Independent | 4 | N-Channel MOSFET | 4.5 V ~ 16.5 V | 0.8V, 2.4V | - | Non-Inverting | - | 1.7µs, 2.5µs | -40°C ~ 85°C (TA) | Surface Mount | 18-SOIC (0.295", 7.50mm Width) | 18-SOIC |
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Texas Instruments |
IC DUAL CHAN POWER DRIVER 20PLCC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 5 V ~ 40 V
- Logic Voltage - VIL, VIH: 0.8V, 2.2V
- Current - Peak Output (Source, Sink): 1.5A, 1.5A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 40ns, 40ns
- Operating Temperature: -25°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-LCC (J-Lead)
- Supplier Device Package: 20-PLCC (9x9)
|
Package: 20-LCC (J-Lead) |
Stock6,160 |
|
Independent | 2 | N-Channel MOSFET | 5 V ~ 40 V | 0.8V, 2.2V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 40ns, 40ns | -25°C ~ 85°C (TA) | Surface Mount | 20-LCC (J-Lead) | 20-PLCC (9x9) |
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Intersil |
IC MOSFET DRVR SYNC BUCK 8EPSOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock7,456 |
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Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC DRIVER MOSFET DUAL 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 20ns
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock50,400 |
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Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 2A, 2A | Inverting | - | 25ns, 20ns | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 600V HALF 14SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.2V
- Current - Peak Output (Source, Sink): 1A, 1A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 31ns, 31ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
|
Package: 14-SOIC (0.154", 3.90mm Width) |
Stock3,968 |
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Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.2V | 1A, 1A | Non-Inverting | 600V | 31ns, 31ns | -40°C ~ 125°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL OD 8-DIP
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 1.5A, 1.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 40ns, 40ns (Max)
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
|
Package: 8-DIP (0.300", 7.62mm) |
Stock2,144 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 40ns, 40ns (Max) | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Intersil |
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 16 V
- Logic Voltage - VIL, VIH: 1.22V, 2.08V
- Current - Peak Output (Source, Sink): 6A, 6A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock6,096 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 16 V | 1.22V, 2.08V | 6A, 6A | Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Texas Instruments |
IC DUAL HS PWR FET DRVR 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 15 V
- Logic Voltage - VIL, VIH: 1V, 2V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 15ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,224 |
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Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 32V INV 8SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 32 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 2.5A, 2.5A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 120ns, 45ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock5,760 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 32 V | 0.8V, 2.4V | 2.5A, 2.5A | Inverting | - | 120ns, 45ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT26
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 40V (Max)
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 5A, 5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 8.9ns, 8.9ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
|
Package: SOT-23-6 |
Stock5,984 |
|
Single | 1 | IGBT, N-Channel MOSFET | 40V (Max) | - | 5A, 5A | Non-Inverting | - | 8.9ns, 8.9ns | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
IC GATE DRVR HV SO8
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 70ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,768 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Microchip Technology |
IC MOSFET DVR 12A HS 8SOIC
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 13A, 13A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 30ns, 32ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock324,216 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 13A, 13A | Inverting | - | 30ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: 0°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,904 |
|
Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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|
Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: 0°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,232 |
|
Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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|
Microchip Technology |
3.0A SINGLE NON-INV MOSFET DRIVE
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT
- Voltage - Supply: 4.5V ~ 18V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 3A, 3A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 13ns, 12ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: 8-MSOP
|
Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock4,016 |
|
Single | 1 | IGBT | 4.5V ~ 18V | 0.8V, 2V | 3A, 3A | Inverting, Non-Inverting | - | 13ns, 12ns | -40°C ~ 125°C (TA) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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|
Infineon Technologies |
DRIVER IC PG-DSO-8
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5V ~ 20V
- Logic Voltage - VIL, VIH: 1.4V, 1.9V
- Current - Peak Output (Source, Sink): 5A, 5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 8.6ns, 6ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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Package: - |
Stock7,425 |
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Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 20V | 1.4V, 1.9V | 5A, 5A | Non-Inverting | - | 8.6ns, 6ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
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Power Integrations |
IGBT DRIVER P/P 1CH
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT
- Voltage - Supply: 15.5V ~ 16.8V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 6A, 10A
- Input Type: -
- High Side Voltage - Max (Bootstrap): 1200 V
- Rise / Fall Time (Typ): 100ns, 100ns
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Request a Quote |
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Single | 1 | IGBT | 15.5V ~ 16.8V | - | 6A, 10A | - | 1200 V | 100ns, 100ns | -40°C ~ 85°C | Chassis Mount | Module | Module |
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Texas Instruments |
BUFFER/INVERTER BASED MOSFET DRI
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 5V ~ 35V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 1.5A, 1.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 40ns, 40ns
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Synchronous | 2 | N-Channel, P-Channel MOSFET | 5V ~ 35V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 40ns, 40ns | -55°C ~ 125°C | - | - | - |
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onsemi |
IC GATE DRVR LOW-SIDE DUAL 4A
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 9.5V ~ 18V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 5A, 5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 12ns, 9ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: - |
Request a Quote |
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Independent | 2 | N-Channel MOSFET | 9.5V ~ 18V | - | 5A, 5A | Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Power Integrations |
PLUG-AND-PLAY GATE DRIVER, SCALE
- Driven Configuration: -
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT
- Voltage - Supply: 23.5V ~ 26.5V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 35A, 35A
- Input Type: -
- High Side Voltage - Max (Bootstrap): 3300 V
- Rise / Fall Time (Typ): 9ns, 30ns
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Request a Quote |
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Single | 1 | IGBT | 23.5V ~ 26.5V | - | 35A, 35A | - | 3300 V | 9ns, 30ns | -40°C ~ 85°C | Chassis Mount | Module | Module |