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ON Semiconductor |
MOSFET N-CH 600V 4.8A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock134,304 |
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MOSFET (Metal Oxide) | 600V | 4.8A (Tc) | 10V | 4.5V @ 50µA | 29nC @ 10V | 640pF @ 25V | ±30V | - | 30W (Tc) | 2 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 274pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock38,820 |
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MOSFET (Metal Oxide) | 600V | 2.2A (Tc) | 10V | 4.5V @ 50µA | 10.1nC @ 10V | 274pF @ 25V | ±30V | - | 57W (Tc) | 4.8 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 60V 32A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2164pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
- Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock12,378 |
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MOSFET (Metal Oxide) | 60V | 19A (Ta) | 4.5V, 10V | 2V @ 250µA | 33.7nC @ 10V | 2164pF @ 25V | ±20V | - | 3.7W (Ta), 79W (Tc) | 4.7 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 100V 11A TP-FA
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 35W (Tc)
- Rds On (Max) @ Id, Vgs: 275 mOhm @ 5.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TP-FA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,888 |
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MOSFET (Metal Oxide) | 100V | 11A (Ta) | 4V, 10V | - | 21nC @ 10V | 1020pF @ 20V | ±20V | - | 1W (Ta), 35W (Tc) | 275 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 98A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 45A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock11,196 |
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MOSFET (Metal Oxide) | 60V | 98A (Tc) | 10V | 4V @ 250µA | 82nC @ 10V | 6000pF @ 25V | ±20V | - | 115W (Tc) | 5.7 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 16.4A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5025pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock143,952 |
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MOSFET (Metal Oxide) | 40V | 16.4A (Ta), 101A (Tc) | 5V, 10V | 3.5V @ 250µA | 100nC @ 10V | 5025pF @ 25V | ±20V | - | 2.5W (Ta), 93.75W (Tc) | 4.4 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 24V 12.5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
- Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock445,968 |
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MOSFET (Metal Oxide) | 24V | 12.5A (Ta), 110A (Tc) | 4.5V, 10V | 2V @ 250µA | 28nC @ 4.5V | 3440pF @ 20V | ±20V | - | 1.5W (Ta), 110W (Tc) | 4.6 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 18A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock379,308 |
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MOSFET (Metal Oxide) | 60V | 18A (Ta) | 5V | 2V @ 250µA | 22nC @ 5V | 675pF @ 25V | ±15V | - | 2.1W (Ta), 55W (Tj) | 65 mOhm @ 9A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 8.3A 8WDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 11.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2363pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta), 46.3W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
|
Package: 8-PowerWDFN |
Stock14,928 |
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MOSFET (Metal Oxide) | 30V | 8.3A (Ta), 69A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 29nC @ 11.5V | 2363pF @ 12V | ±20V | - | 660mW (Ta), 46.3W (Tc) | 5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 40V 110A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 111A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: 8-PowerTDFN, 5 Leads |
Stock35,448 |
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MOSFET (Metal Oxide) | 40V | 20A (Ta), 111A (Tc) | 4.5V, 10V | 3V @ 250µA | 51nC @ 10V | 2700pF @ 25V | ±20V | - | 3.1W (Ta), 96W (Tc) | 4.2 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 13A SGL DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3052pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock617,748 |
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MOSFET (Metal Oxide) | 30V | 13A (Ta), 79A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 41nC @ 10V | 3052pF @ 15V | ±20V | - | 1.4W (Ta), 52W (Tc) | 3.7 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 8.3A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1436pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: 8-PowerTDFN, 5 Leads |
Stock104,880 |
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MOSFET (Metal Oxide) | 30V | 8.3A (Ta), 57A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 17nC @ 4.5V | 1436pF @ 12V | ±20V | - | 870mW (Ta), 41.7W (Tc) | 7 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 11.6A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3044pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 920mW (Ta), 43W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock138,288 |
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MOSFET (Metal Oxide) | 30V | 11.6A (Ta), 79A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 43nC @ 10V | 3044pF @ 15V | ±20V | - | 920mW (Ta), 43W (Tc) | 3.8 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 9.3A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1954pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 920mW (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock101,832 |
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MOSFET (Metal Oxide) | 30V | 9.3A (Ta), 53A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 28.5nC @ 10V | 1954pF @ 15V | ±20V | - | 920mW (Ta), 30W (Tc) | 5.5 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 11.9A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1972pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 770mW (Ta), 33W (Tc)
- Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock164,160 |
|
MOSFET (Metal Oxide) | 30V | 11.9A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 14nC @ 4.5V | 1972pF @ 15V | ±20V | - | 770mW (Ta), 33W (Tc) | 3.4 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 6.8A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 780mW (Ta)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock685,236 |
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MOSFET (Metal Oxide) | 30V | 6.8A (Ta) | 4.5V, 10V | 3V @ 250µA | 18.3nC @ 10V | 1060pF @ 25V | ±20V | - | 780mW (Ta) | 10 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 25V 11.2A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1563pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
- Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,757,084 |
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MOSFET (Metal Oxide) | 25V | 11.2A (Ta), 73A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 19.2nC @ 4.5V | 1563pF @ 12V | ±20V | - | 1.3W (Ta), 54.5W (Tc) | 6.2 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 9.6A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 11.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock559,428 |
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MOSFET (Metal Oxide) | 30V | 9.6A (Ta), 58A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 25nC @ 11.5V | 1456pF @ 12V | ±20V | - | 1.4W (Ta), 52W (Tc) | 9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 20V 5.2A CHIPFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 600mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ChipFET?
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock578,364 |
|
MOSFET (Metal Oxide) | 20V | 5.2A (Ta) | 2.5V, 4.5V | 600mV @ 250µA | 18nC @ 4.5V | - | ±12V | - | 1.3W (Ta) | 30 mOhm @ 5.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | ChipFET? | 8-SMD, Flat Lead |
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ON Semiconductor |
MOSFET N-CH 30V 8.8A SGL DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.37W (Ta), 29.4W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock827,556 |
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MOSFET (Metal Oxide) | 30V | 8.8A (Ta), 41A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 17.5nC @ 10V | 1314pF @ 15V | ±20V | - | 1.37W (Ta), 29.4W (Tc) | 8 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 20V 2.3A 6-WDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
- Vgs (Max): ±8V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 710mW (Ta)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: 6-WDFN Exposed Pad |
Stock674,028 |
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MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 6.2nC @ 4.5V | 531pF @ 10V | ±8V | Schottky Diode (Isolated) | 710mW (Ta) | 100 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 30V 2.5A 6-WDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 15V
- Vgs (Max): ±8V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 710mW (Ta)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: 6-WDFN Exposed Pad |
Stock129,108 |
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MOSFET (Metal Oxide) | 30V | 2.5A (Tj) | 1.5V, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | 427pF @ 15V | ±8V | Schottky Diode (Isolated) | 710mW (Ta) | 70 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 20V 1.8A SOT-23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 420mW (Ta)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.6A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock23,124 |
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MOSFET (Metal Oxide) | 20V | 1.8A (Ta) | 1.8V, 4.5V | 1.2V @ 250µA | 8.5nC @ 4.5V | 675pF @ 10V | ±8V | - | 420mW (Ta) | 85 mOhm @ 1.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 600V 9A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock6,480 |
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MOSFET (Metal Oxide) | 600V | 9A (Tc) | 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 400V | ±18V | - | 65W (Tc) | 350 mOhm @ 5.5A, 8V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 19A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 132A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.4W (Ta), 165W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock15,786 |
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MOSFET (Metal Oxide) | 100V | 19A (Ta), 132A (Tc) | 6V, 10V | 4V @ 250µA | 58nC @ 10V | 4200pF @ 50V | ±20V | - | 3.4W (Ta), 165W (Tc) | 4.8 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 60V 78A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 78A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 39A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3SG
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock7,896 |
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MOSFET (Metal Oxide) | 60V | 78A (Ta) | 4V, 10V | - | 285nC @ 10V | 13200pF @ 20V | ±20V | - | 2W (Ta), 40W (Tc) | 6.5 mOhm @ 39A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3SG | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET P-CH 75V 100A SMP-FD
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 50A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock18,276 |
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MOSFET (Metal Oxide) | 75V | 100A (Ta) | 4V, 10V | - | 280nC @ 10V | 13400pF @ 20V | ±20V | - | 90W (Tc) | 8 mOhm @ 50A, 10V | 150°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 500V 12A TO-220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1645pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Rds On (Max) @ Id, Vgs: 520 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock3,584 |
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MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 4.5V @ 100µA | 69nC @ 10V | 1645pF @ 25V | ±30V | - | 39W (Tc) | 520 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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