Page 5 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NTMFS4C59NT1G
ON Semiconductor

MOSFET N-CH 30V 52A SO8FL

Package: 8-PowerTDFN

Stock14,340
NTTFS5C670NLTAG
ON Semiconductor

MOSFET N-CH 60V 16A WDFN8

Package: 8-PowerWDFN

Stock13,656
NTTFS3A08PZTWG
ON Semiconductor

MOSFET P-CH 20V 14A U8FL

Package: 8-PowerWDFN

Stock32,892
NVMFS5885NLT1G
ON Semiconductor

MOSFET N-CH 60V 39A SO8FL

Package: 8-PowerTDFN

Stock12,516
NTMFS4983NFT1G
ON Semiconductor

MOSFET N-CH 30V 160A SO8FL

Package: 8-PowerTDFN

Stock109,248
NTMFS5C460NLT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN

Stock16,836
STD5406NT4G-VF01
ON Semiconductor

MOSFET N-CH 40V 12.2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock21,102
NVTFS5124PLTAG
ON Semiconductor

MOSFET P-CH 60V 8A U8FL

Package: 8-PowerWDFN

Stock29,310
NTMFS4C08NT1G
ON Semiconductor

MOSFET N-CH 30V 52A SO8FL

Package: 8-PowerTDFN

Stock636,960
1HN04CH-TL-W
ON Semiconductor

MOSFET N-CH 100V 0.27A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock24,684
NTMFS4937NT1G
ON Semiconductor

MOSFET N-CH 30V 10.2A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock286,836
NTMFS4C13NT1G
ON Semiconductor

MOSFET N-CH 30V 38A SO8FL

Package: 8-PowerTDFN

Stock17,232
NTD4965NT4G
ON Semiconductor

MOSFET N-CH 30V 68A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock250,284
CPH6445-TL-W
ON Semiconductor

MOSFET N-CH 60V 3.5A CPH6

Package: SOT-23-6

Stock46,590
MCH6342-TL-W
ON Semiconductor

MOSFET P-CH 30V 4.5A MCPH6

Package: 6-SMD, Flat Leads

Stock42,462
SCH1430-TL-W
ON Semiconductor

MOSFET N-CH 20V 2A SCH6

Package: SOT-563, SOT-666

Stock36,384
5HP01M-TL-H
ON Semiconductor

MOSFET P-CH 50V 0.07A MCP3

Package: SC-70, SOT-323

Stock1,679,640
6HP04CH-TL-W
ON Semiconductor

MOSFET P-CH 60V 0.37A SB69

Package: TO-236-3, SC-59, SOT-23-3

Stock29,292
3LN01C-TB-E
ON Semiconductor

MOSFET N-CH 30V 150MA 3CP

Package: TO-236-3, SC-59, SOT-23-3

Stock2,005,968
3LP01M-TL-H
ON Semiconductor

MOSFET P-CH 30V 0.1A MCP

Package: SC-70, SOT-323

Stock4,625,292

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTMFS4C59NT1G	ON Semiconductor	MOSFET N-CH 30V 52A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 30A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock14,340	MOSFET (Metal Oxide)	30V	9A (Ta), 52A (Tc)	4.5V, 10V	2.1V @ 250µA	22.2nC @ 10V	1252pF @ 15V	±20V	-	-	5.8 mOhm @ 30A, 10V	-	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTTFS5C670NLTAG	ON Semiconductor	MOSFET N-CH 60V 16A WDFN8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 53µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock13,656	MOSFET (Metal Oxide)	60V	16A (Ta), 70A (Tc)	4.5V, 10V	2V @ 53µA	20nC @ 10V	1400pF @ 25V	±20V	-	3.2W (Ta), 63W (Tc)	6.5 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTTFS3A08PZTWG	ON Semiconductor	MOSFET P-CH 20V 14A U8FL FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 840mW (Ta) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 12A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock32,892	MOSFET (Metal Oxide)	20V	9A (Ta)	2.5V, 4.5V	1V @ 250µA	56nC @ 4.5V	5000pF @ 10V	±8V	-	840mW (Ta)	6.7 mOhm @ 12A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NVMFS5885NLT1G	ON Semiconductor	MOSFET N-CH 60V 39A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock12,516	MOSFET (Metal Oxide)	60V	10.2A (Ta)	4.5V, 10V	2.5V @ 250µA	21nC @ 10V	1340pF @ 25V	±20V	-	3.7W (Ta), 54W (Tc)	15 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTMFS4983NFT1G	ON Semiconductor	MOSFET N-CH 30V 160A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 106A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock109,248	MOSFET (Metal Oxide)	30V	22A (Ta), 106A (Tc)	4.5V, 10V	2.3V @ 1mA	47.9nC @ 10V	3250pF @ 15V	±20V	-	1.7W (Ta), 38W (Tc)	2.1 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTMFS5C460NLT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock16,836	MOSFET (Metal Oxide)	40V	-	4.5V, 10V	2V @ 250µA	23nC @ 10V	1300pF @ 20V	±20V	-	3.6W (Ta), 50W (Tc)	4.5 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
STD5406NT4G-VF01	ON Semiconductor	MOSFET N-CH 40V 12.2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 32V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock21,102	MOSFET (Metal Oxide)	40V	12.2A (Ta), 70A (Tc)	5V, 10V	3.5V @ 250µA	45nC @ 10V	2500pF @ 32V	±20V	-	3W (Ta), 100W (Tc)	10 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NVTFS5124PLTAG	ON Semiconductor	MOSFET P-CH 60V 8A U8FL FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 18W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock29,310	MOSFET (Metal Oxide)	60V	2.4A (Ta)	4.5V, 10V	2.5V @ 250µA	6nC @ 10V	250pF @ 25V	±20V	-	3W (Ta), 18W (Tc)	260 mOhm @ 3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTMFS4C08NT1G	ON Semiconductor	MOSFET N-CH 30V 52A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1113pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 760mW (Ta), 25.5W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock636,960	MOSFET (Metal Oxide)	30V	9A (Ta), 52A (Tc)	4.5V, 10V	2.1V @ 250µA	18.2nC @ 10V	1113pF @ 15V	±20V	-	760mW (Ta), 25.5W (Tc)	5.8 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
1HN04CH-TL-W	ON Semiconductor	MOSFET N-CH 100V 0.27A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 8 Ohm @ 140mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CPH Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock24,684	MOSFET (Metal Oxide)	100V	270mA (Ta)	4V, 10V	2.6V @ 100µA	0.9nC @ 10V	15pF @ 20V	±20V	-	-	8 Ohm @ 140mA, 10V	150°C (TJ)	Surface Mount	3-CPH	TO-236-3, SC-59, SOT-23-3
NTMFS4937NT1G	ON Semiconductor	MOSFET N-CH 30V 10.2A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2516pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 920mW (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock286,836	MOSFET (Metal Oxide)	30V	10.2A (Ta), 70A (Tc)	4.5V, 10V	2.2V @ 250µA	31nC @ 10V	2516pF @ 15V	±20V	-	920mW (Ta), 43W (Tc)	4 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4C13NT1G	ON Semiconductor	MOSFET N-CH 30V 38A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock17,232	MOSFET (Metal Oxide)	30V	7.2A (Ta), 38A (Tc)	4.5V, 10V	2.1V @ 250µA	15.2nC @ 10V	770pF @ 15V	±20V	-	750mW (Ta)	9.1 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTD4965NT4G	ON Semiconductor	MOSFET N-CH 30V 68A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.39W (Ta), 38.5W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock250,284	MOSFET (Metal Oxide)	30V	13A (Ta), 68A (Tc)	4.5V, 10V	2.5V @ 250µA	17.2nC @ 4.5V	1710pF @ 15V	±20V	-	1.39W (Ta), 38.5W (Tc)	4.7 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
CPH6445-TL-W	ON Semiconductor	MOSFET N-CH 60V 3.5A CPH6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 117 mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-CPH Package / Case: SOT-23-6	Package: SOT-23-6	Stock46,590	MOSFET (Metal Oxide)	60V	3.5A (Ta)	4V, 10V	-	6.8nC @ 10V	310pF @ 20V	±20V	-	1.6W (Ta)	117 mOhm @ 1.5A, 10V	150°C (TJ)	Surface Mount	6-CPH	SOT-23-6
MCH6342-TL-W	ON Semiconductor	MOSFET P-CH 30V 4.5A MCPH6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 73 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88FL/ MCPH6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock42,462	MOSFET (Metal Oxide)	30V	4.5A (Ta)	1.8V, 4.5V	1.3V @ 1mA	8.6nC @ 4.5V	650pF @ 10V	±10V	-	1.5W (Ta)	73 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	SC-88FL/ MCPH6	6-SMD, Flat Leads
SCH1430-TL-W	ON Semiconductor	MOSFET N-CH 20V 2A SCH6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 125 mOhm @ 1A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-563/SCH6 Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock36,384	MOSFET (Metal Oxide)	20V	2A (Ta)	1.8V, 4.5V	1.3V @ 1mA	1.8nC @ 4.5V	128pF @ 10V	±12V	-	800mW (Ta)	125 mOhm @ 1A, 4.5V	150°C (TJ)	Surface Mount	SOT-563/SCH6	SOT-563, SOT-666
5HP01M-TL-H	ON Semiconductor	MOSFET P-CH 50V 0.07A MCP3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 70mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6.2pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 22 Ohm @ 40mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-MCP Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock1,679,640	MOSFET (Metal Oxide)	50V	70mA (Ta)	4V, 10V	-	1.32nC @ 10V	6.2pF @ 10V	±20V	-	150mW (Ta)	22 Ohm @ 40mA, 10V	150°C (TJ)	Surface Mount	3-MCP	SC-70, SOT-323
6HP04CH-TL-W	ON Semiconductor	MOSFET P-CH 60V 0.37A SB69 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 370mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 0.84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 24.1pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 190mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CPH Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock29,292	MOSFET (Metal Oxide)	60V	370mA (Ta)	4V, 10V	-	0.84nC @ 10V	24.1pF @ 20V	±20V	-	-	4.2 Ohm @ 190mA, 10V	150°C (TJ)	Surface Mount	3-CPH	TO-236-3, SC-59, SOT-23-3
3LN01C-TB-E	ON Semiconductor	MOSFET N-CH 30V 150MA 3CP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CP Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,005,968	MOSFET (Metal Oxide)	30V	150mA (Ta)	1.5V, 4V	-	1.58nC @ 10V	7pF @ 10V	±10V	-	250mW (Ta)	3.7 Ohm @ 80mA, 4V	150°C (TJ)	Surface Mount	3-CP	TO-236-3, SC-59, SOT-23-3
3LP01M-TL-H	ON Semiconductor	MOSFET P-CH 30V 0.1A MCP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7.5pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-MCP Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock4,625,292	MOSFET (Metal Oxide)	30V	100mA (Ta)	1.5V, 4V	-	1.43nC @ 10V	7.5pF @ 10V	±10V	-	150mW (Ta)	10.4 Ohm @ 50mA, 4V	150°C (TJ)	Surface Mount	3-MCP	SC-70, SOT-323
5LN01M-TL-H	ON Semiconductor	MOSFET N-CH 50V 100MA SC59 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-MCP Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock50,538	MOSFET (Metal Oxide)	50V	100mA (Ta)	1.5V, 4V	-	1.57nC @ 10V	6.6pF @ 10V	±10V	-	150mW (Ta)	7.8 Ohm @ 50mA, 4V	150°C (TJ)	Surface Mount	3-MCP	SC-70, SOT-323
NTB35N15T4G	ON Semiconductor	MOSFET N-CH 150V 37A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 37A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 178W (Tj) Rds On (Max) @ Id, Vgs: 50 mOhm @ 18.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock435,936	MOSFET (Metal Oxide)	150V	37A (Ta)	10V	4V @ 250µA	100nC @ 10V	3200pF @ 25V	±20V	-	2W (Ta), 178W (Tj)	50 mOhm @ 18.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NDF06N60ZG	ON Semiconductor	MOSFET N-CH 600V 7.1A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1107pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock67,452	MOSFET (Metal Oxide)	600V	7.1A (Tc)	10V	4.5V @ 100µA	47nC @ 10V	1107pF @ 25V	±30V	-	35W (Tc)	1.2 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
ATP405-TL-H	ON Semiconductor	MOSFET N-CH 100V 40A ATPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	Package: ATPAK (2 leads+tab)	Stock49,920	MOSFET (Metal Oxide)	100V	40A (Ta)	10V	-	68nC @ 10V	4000pF @ 20V	±20V	-	70W (Tc)	33 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	ATPAK	ATPAK (2 leads+tab)
NTMFS4821NT1G	ON Semiconductor	MOSFET N-CH 30V 8.8A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 58.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 870mW (Ta), 38.5W (Tc) Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock143,436	MOSFET (Metal Oxide)	30V	8.8A (Ta), 58.5A (Tc)	4.5V, 10V	2.5V @ 250µA	16nC @ 4.5V	1400pF @ 12V	±20V	-	870mW (Ta), 38.5W (Tc)	6.95 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NDUL09N150CG	ON Semiconductor	MOSFET N-CH 1500V 9A TO3PF-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2025pF @ 30V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: - Supplier Device Package: TO-3PF-3 Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock7,648	MOSFET (Metal Oxide)	1500V	9A (Ta)	10V	4V @ 1mA	114nC @ 10V	2025pF @ 30V	±30V	-	3W (Ta), 78W (Tc)	3 Ohm @ 3A, 10V	150°C (TJ)	-	TO-3PF-3	TO-3P-3 Full Pack
WPH4003-1E	ON Semiconductor	MOSFET N-CH 1700V 2.5A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 10.5 Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock6,516	MOSFET (Metal Oxide)	1700V	2.5A (Tc)	10V	-	48nC @ 10V	850pF @ 30V	±30V	-	3W (Ta), 55W (Tc)	10.5 Ohm @ 1.5A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
NTB6410ANT4G	ON Semiconductor	MOSFET N-CH 100V 76A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 76A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock20,724	MOSFET (Metal Oxide)	100V	76A (Tc)	10V	4V @ 250µA	120nC @ 10V	4500pF @ 25V	±20V	-	188W (Tc)	13 mOhm @ 76A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB