Page 54 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NTD4302G
ON Semiconductor

MOSFET N-CH 30V 8.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,520
NTD4302-1G
ON Semiconductor

MOSFET N-CH 30V 8.4A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,152
NTD4302
ON Semiconductor

MOSFET N-CH 30V 8.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock526,968
NTD40N03RG
ON Semiconductor

MOSFET N-CH 25V 7.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,152
NTD32N06LG
ON Semiconductor

MOSFET N-CH 60V 32A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock59,076
NTD32N06L-1G
ON Semiconductor

MOSFET N-CH 60V 32A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,680
NTD32N06L
ON Semiconductor

MOSFET N-CH 60V 32A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock451,452
NTD32N06G
ON Semiconductor

MOSFET N-CH 60V 32A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock59,076
NTD32N06-1G
ON Semiconductor

MOSFET N-CH 60V 32A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,480
NTD32N06
ON Semiconductor

MOSFET N-CH 60V 32A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,560
NTD30N02G
ON Semiconductor

MOSFET N-CH 24V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,400
NTD3055L170G
ON Semiconductor

MOSFET N-CH 60V 9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock60,960
NTD3055L170-1G
ON Semiconductor

MOSFET N-CH 60V 9A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock25,200
NTD3055L170
ON Semiconductor

MOSFET N-CH 60V 9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock390,000
NTD3055L104G
ON Semiconductor

MOSFET N-CH 60V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock126,192
NTD3055L104
ON Semiconductor

MOSFET N-CH 60V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock390,000
NTD3055-150G
ON Semiconductor

MOSFET N-CH 60V 9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,000
NTD3055-150-1G
ON Semiconductor

MOSFET N-CH 60V 9A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,584
NTD3055-094G
ON Semiconductor

MOSFET N-CH 60V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock15,336
NTD3055-094-1G
ON Semiconductor

MOSFET N-CH 60V 12A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock120,132

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTD4302G	ON Semiconductor	MOSFET N-CH 30V 8.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.04W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,520	MOSFET (Metal Oxide)	30V	8.4A (Ta), 68A (Tc)	4.5V, 10V	3V @ 250µA	80nC @ 10V	2400pF @ 24V	±20V	-	1.04W (Ta), 75W (Tc)	10 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4302-1G	ON Semiconductor	MOSFET N-CH 30V 8.4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.04W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,152	MOSFET (Metal Oxide)	30V	8.4A (Ta), 68A (Tc)	4.5V, 10V	3V @ 250µA	80nC @ 10V	2400pF @ 24V	±20V	-	1.04W (Ta), 75W (Tc)	10 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD4302	ON Semiconductor	MOSFET N-CH 30V 8.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.04W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock526,968	MOSFET (Metal Oxide)	30V	8.4A (Ta), 68A (Tc)	4.5V, 10V	3V @ 250µA	80nC @ 10V	2400pF @ 24V	±20V	-	1.04W (Ta), 75W (Tc)	10 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD40N03RG	ON Semiconductor	MOSFET N-CH 25V 7.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.78nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,152	MOSFET (Metal Oxide)	25V	7.8A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	5.78nC @ 4.5V	584pF @ 20V	±20V	-	1.5W (Ta), 50W (Tc)	16.5 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD32N06LG	ON Semiconductor	MOSFET N-CH 60V 32A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj) Rds On (Max) @ Id, Vgs: 28 mOhm @ 16A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock59,076	MOSFET (Metal Oxide)	60V	32A (Ta)	5V	2V @ 250µA	50nC @ 5V	1700pF @ 25V	±20V	-	1.5W (Ta), 93.75W (Tj)	28 mOhm @ 16A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD32N06L-1G	ON Semiconductor	MOSFET N-CH 60V 32A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj) Rds On (Max) @ Id, Vgs: 28 mOhm @ 16A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,680	MOSFET (Metal Oxide)	60V	32A (Ta)	5V	2V @ 250µA	50nC @ 5V	1700pF @ 25V	±20V	-	1.5W (Ta), 93.75W (Tj)	28 mOhm @ 16A, 5V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD32N06L	ON Semiconductor	MOSFET N-CH 60V 32A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj) Rds On (Max) @ Id, Vgs: 28 mOhm @ 16A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock451,452	MOSFET (Metal Oxide)	60V	32A (Ta)	5V	2V @ 250µA	50nC @ 5V	1700pF @ 25V	±20V	-	1.5W (Ta), 93.75W (Tj)	28 mOhm @ 16A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD32N06G	ON Semiconductor	MOSFET N-CH 60V 32A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj) Rds On (Max) @ Id, Vgs: 26 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock59,076	MOSFET (Metal Oxide)	60V	32A (Ta)	10V	4V @ 250µA	60nC @ 10V	1725pF @ 25V	±20V	-	1.5W (Ta), 93.75W (Tj)	26 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD32N06-1G	ON Semiconductor	MOSFET N-CH 60V 32A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj) Rds On (Max) @ Id, Vgs: 26 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,480	MOSFET (Metal Oxide)	60V	32A (Ta)	10V	4V @ 250µA	60nC @ 10V	1725pF @ 25V	±20V	-	1.5W (Ta), 93.75W (Tj)	26 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD32N06	ON Semiconductor	MOSFET N-CH 60V 32A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj) Rds On (Max) @ Id, Vgs: 26 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,560	MOSFET (Metal Oxide)	60V	32A (Ta)	10V	4V @ 250µA	60nC @ 10V	1725pF @ 25V	±20V	-	1.5W (Ta), 93.75W (Tj)	26 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD30N02G	ON Semiconductor	MOSFET N-CH 24V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tj) Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,400	MOSFET (Metal Oxide)	24V	30A (Ta)	4.5V, 10V	3V @ 250µA	20nC @ 4.5V	1000pF @ 20V	±20V	-	75W (Tj)	14.5 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD3055L170G	ON Semiconductor	MOSFET N-CH 60V 9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj) Rds On (Max) @ Id, Vgs: 170 mOhm @ 4.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock60,960	MOSFET (Metal Oxide)	60V	9A (Ta)	5V	2V @ 250µA	10nC @ 5V	275pF @ 25V	±15V	-	1.5W (Ta), 28.5W (Tj)	170 mOhm @ 4.5A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD3055L170-1G	ON Semiconductor	MOSFET N-CH 60V 9A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj) Rds On (Max) @ Id, Vgs: 170 mOhm @ 4.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock25,200	MOSFET (Metal Oxide)	60V	9A (Ta)	5V	2V @ 250µA	10nC @ 5V	275pF @ 25V	±15V	-	1.5W (Ta), 28.5W (Tj)	170 mOhm @ 4.5A, 5V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD3055L170	ON Semiconductor	MOSFET N-CH 60V 9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj) Rds On (Max) @ Id, Vgs: 170 mOhm @ 4.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock390,000	MOSFET (Metal Oxide)	60V	9A (Ta)	5V	2V @ 250µA	10nC @ 5V	275pF @ 25V	±15V	-	1.5W (Ta), 28.5W (Tj)	170 mOhm @ 4.5A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD3055L104G	ON Semiconductor	MOSFET N-CH 60V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Rds On (Max) @ Id, Vgs: 104 mOhm @ 6A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock126,192	MOSFET (Metal Oxide)	60V	12A (Ta)	5V	2V @ 250µA	20nC @ 5V	440pF @ 25V	±15V	-	1.5W (Ta), 48W (Tj)	104 mOhm @ 6A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD3055L104	ON Semiconductor	MOSFET N-CH 60V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Rds On (Max) @ Id, Vgs: 104 mOhm @ 6A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock390,000	MOSFET (Metal Oxide)	60V	12A (Ta)	5V	2V @ 250µA	20nC @ 5V	440pF @ 25V	±15V	-	1.5W (Ta), 48W (Tj)	104 mOhm @ 6A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD3055-150G	ON Semiconductor	MOSFET N-CH 60V 9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj) Rds On (Max) @ Id, Vgs: 150 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,000	MOSFET (Metal Oxide)	60V	9A (Ta)	10V	4V @ 250µA	15nC @ 10V	280pF @ 25V	±20V	-	1.5W (Ta), 28.8W (Tj)	150 mOhm @ 4.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD3055-150-1G	ON Semiconductor	MOSFET N-CH 60V 9A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj) Rds On (Max) @ Id, Vgs: 150 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,584	MOSFET (Metal Oxide)	60V	9A (Ta)	10V	4V @ 250µA	15nC @ 10V	280pF @ 25V	±20V	-	1.5W (Ta), 28.8W (Tj)	150 mOhm @ 4.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD3055-094G	ON Semiconductor	MOSFET N-CH 60V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Rds On (Max) @ Id, Vgs: 94 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock15,336	MOSFET (Metal Oxide)	60V	12A (Ta)	10V	4V @ 250µA	20nC @ 10V	450pF @ 25V	±20V	-	1.5W (Ta), 48W (Tj)	94 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD3055-094-1G	ON Semiconductor	MOSFET N-CH 60V 12A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Rds On (Max) @ Id, Vgs: 94 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock120,132	MOSFET (Metal Oxide)	60V	12A (Ta)	10V	4V @ 250µA	20nC @ 10V	450pF @ 25V	±20V	-	1.5W (Ta), 48W (Tj)	94 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD3055-094-1	ON Semiconductor	MOSFET N-CH 60V 12A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Rds On (Max) @ Id, Vgs: 94 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,088	MOSFET (Metal Oxide)	60V	12A (Ta)	10V	4V @ 250µA	20nC @ 10V	450pF @ 25V	±20V	-	1.5W (Ta), 48W (Tj)	94 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD3055-094	ON Semiconductor	MOSFET N-CH 60V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Rds On (Max) @ Id, Vgs: 94 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock450,012	MOSFET (Metal Oxide)	60V	12A (Ta)	10V	4V @ 250µA	20nC @ 10V	450pF @ 25V	±20V	-	1.5W (Ta), 48W (Tj)	94 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD2955G	ON Semiconductor	MOSFET P-CH 60V 12A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tj) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock382,332	MOSFET (Metal Oxide)	60V	12A (Ta)	10V	4V @ 250µA	30nC @ 10V	750pF @ 25V	±20V	-	55W (Tj)	180 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD25P03LG	ON Semiconductor	MOSFET P-CH 30V 25A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 75W (Tj) Rds On (Max) @ Id, Vgs: 80 mOhm @ 25A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock123,300	MOSFET (Metal Oxide)	30V	25A (Ta)	4V, 5V	2V @ 250µA	20nC @ 5V	1260pF @ 25V	±15V	-	75W (Tj)	80 mOhm @ 25A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD24N06LG	ON Semiconductor	MOSFET N-CH 60V 24A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj) Rds On (Max) @ Id, Vgs: 45 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock62,388	MOSFET (Metal Oxide)	60V	24A (Ta)	5V	2V @ 250µA	32nC @ 5V	1140pF @ 25V	±15V	-	1.36W (Ta), 62.5W (Tj)	45 mOhm @ 10A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD24N06L-1G	ON Semiconductor	MOSFET N-CH 60V 24A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj) Rds On (Max) @ Id, Vgs: 45 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock18,240	MOSFET (Metal Oxide)	60V	24A (Ta)	5V	2V @ 250µA	32nC @ 5V	1140pF @ 25V	±15V	-	1.36W (Ta), 62.5W (Tj)	45 mOhm @ 10A, 5V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD24N06L-001	ON Semiconductor	MOSFET N-CH 60V 24A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj) Rds On (Max) @ Id, Vgs: 45 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,712	MOSFET (Metal Oxide)	60V	24A (Ta)	5V	2V @ 250µA	32nC @ 5V	1140pF @ 25V	±15V	-	1.36W (Ta), 62.5W (Tj)	45 mOhm @ 10A, 5V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD24N06L	ON Semiconductor	MOSFET N-CH 60V 24A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj) Rds On (Max) @ Id, Vgs: 45 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock390,000	MOSFET (Metal Oxide)	60V	24A (Ta)	5V	2V @ 250µA	32nC @ 5V	1140pF @ 25V	±15V	-	1.36W (Ta), 62.5W (Tj)	45 mOhm @ 10A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63