Page 51 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NTB25P06G
ON Semiconductor

MOSFET P-CH 60V 27.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,536
NTB25P06
ON Semiconductor

MOSFET P-CH 60V 27.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock390,000
NTB23N03RG
ON Semiconductor

MOSFET N-CH 25V 23A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,664
NTB23N03R
ON Semiconductor

MOSFET N-CH 25V 23A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,552
NTB18N06LG
ON Semiconductor

MOSFET N-CH 60V 15A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock129,588
NTB18N06L
ON Semiconductor

MOSFET N-CH 60V 15A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock88,584
NTB18N06G
ON Semiconductor

MOSFET N-CH 60V 15A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,296
NTB18N06
ON Semiconductor

MOSFET N-CH 60V 15A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,200
NTB13N10G
ON Semiconductor

MOSFET N-CH 100V 13A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,512
NTB13N10
ON Semiconductor

MOSFET N-CH 100V 13A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,248
NTB125N02RG
ON Semiconductor

MOSFET N-CH 24V 15.9A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock390,000
NTB125N02R
ON Semiconductor

MOSFET N-CH 24V 15.9A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,088
NTA7002NT1
ON Semiconductor

MOSFET N-CH 30V 0.154A SOT-416

Package: SC-75, SOT-416

Stock4,960
NTA4153NT1
ON Semiconductor

MOSFET N-CH 20V 915MA SOT-416

Package: SC-75, SOT-416

Stock32,844
NTA4151PT1
ON Semiconductor

MOSFET P-CH 20V 0.76A SOT-416

Package: SC-75, SOT-416

Stock104,760
NILMS4501NR2
ON Semiconductor

MOSFET N-CH 24V 9.5A 4-LLP

Package: 4-DFN

Stock7,760
MTP20N15E
ON Semiconductor

MOSFET N-CH 150V 20A TO-220AB

Package: TO-220-3

Stock89,580
MTB50P03HDLG
ON Semiconductor

MOSFET P-CH 30V 50A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock780,000
MMSF7P03HDR2G
ON Semiconductor

MOSFET P-CH 30V 7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock498,552
MMSF7P03HDR2
ON Semiconductor

MOSFET P-CH 30V 7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock42,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTB25P06G	ON Semiconductor	MOSFET P-CH 60V 27.5A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 120W (Tj) Rds On (Max) @ Id, Vgs: 82 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,536	MOSFET (Metal Oxide)	60V	27.5A (Ta)	10V	4V @ 250µA	50nC @ 10V	1680pF @ 25V	±15V	-	120W (Tj)	82 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB25P06	ON Semiconductor	MOSFET P-CH 60V 27.5A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 120W (Tj) Rds On (Max) @ Id, Vgs: 82 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,000	MOSFET (Metal Oxide)	60V	27.5A (Ta)	10V	4V @ 250µA	50nC @ 10V	1680pF @ 25V	±15V	-	120W (Tj)	82 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB23N03RG	ON Semiconductor	MOSFET N-CH 25V 23A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 37.5W (Tj) Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,664	MOSFET (Metal Oxide)	25V	23A (Ta)	4.5V, 10V	2V @ 250µA	3.76nC @ 4.5V	225pF @ 20V	±20V	-	37.5W (Tj)	45 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB23N03R	ON Semiconductor	MOSFET N-CH 25V 23A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 37.5W (Tj) Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,552	MOSFET (Metal Oxide)	25V	23A (Ta)	4.5V, 10V	2V @ 250µA	3.76nC @ 4.5V	225pF @ 20V	±20V	-	37.5W (Tj)	45 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB18N06LG	ON Semiconductor	MOSFET N-CH 60V 15A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 48.4W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock129,588	MOSFET (Metal Oxide)	60V	15A (Tc)	5V	2V @ 250µA	20nC @ 5V	440pF @ 25V	±10V	-	48.4W (Tc)	100 mOhm @ 7.5A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB18N06L	ON Semiconductor	MOSFET N-CH 60V 15A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 48.4W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock88,584	MOSFET (Metal Oxide)	60V	15A (Tc)	5V	2V @ 250µA	20nC @ 5V	440pF @ 25V	±10V	-	48.4W (Tc)	100 mOhm @ 7.5A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB18N06G	ON Semiconductor	MOSFET N-CH 60V 15A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48.4W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,296	MOSFET (Metal Oxide)	60V	15A (Tc)	10V	4V @ 250µA	22nC @ 10V	450pF @ 25V	±20V	-	48.4W (Tc)	90 mOhm @ 7.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB18N06	ON Semiconductor	MOSFET N-CH 60V 15A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48.4W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,200	MOSFET (Metal Oxide)	60V	15A (Tc)	10V	4V @ 250µA	22nC @ 10V	450pF @ 25V	±20V	-	48.4W (Tc)	90 mOhm @ 7.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB13N10G	ON Semiconductor	MOSFET N-CH 100V 13A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 64.7W (Ta) Rds On (Max) @ Id, Vgs: 165 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,512	MOSFET (Metal Oxide)	100V	13A (Ta)	10V	4V @ 250µA	20nC @ 10V	550pF @ 25V	±20V	-	64.7W (Ta)	165 mOhm @ 6.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB13N10	ON Semiconductor	MOSFET N-CH 100V 13A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 64.7W (Ta) Rds On (Max) @ Id, Vgs: 165 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,248	MOSFET (Metal Oxide)	100V	13A (Ta)	10V	4V @ 250µA	20nC @ 10V	550pF @ 25V	±20V	-	64.7W (Ta)	165 mOhm @ 6.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB125N02RG	ON Semiconductor	MOSFET N-CH 24V 15.9A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 95A (Ta), 120.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.98W (Ta), 113.6W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,000	MOSFET (Metal Oxide)	24V	95A (Ta), 120.5A (Tc)	4.5V, 10V	2V @ 250µA	28nC @ 4.5V	3440pF @ 20V	±20V	-	1.98W (Ta), 113.6W (Tc)	4.6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB125N02R	ON Semiconductor	MOSFET N-CH 24V 15.9A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 95A (Ta), 120.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.98W (Ta), 113.6W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,088	MOSFET (Metal Oxide)	24V	95A (Ta), 120.5A (Tc)	4.5V, 10V	2V @ 250µA	28nC @ 4.5V	3440pF @ 20V	±20V	-	1.98W (Ta), 113.6W (Tc)	4.6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTA7002NT1	ON Semiconductor	MOSFET N-CH 30V 0.154A SOT-416 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 154mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 300mW (Tj) Rds On (Max) @ Id, Vgs: 7 Ohm @ 154mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75, SOT-416 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock4,960	MOSFET (Metal Oxide)	30V	154mA (Tj)	2.5V, 4.5V	1.5V @ 100µA	-	20pF @ 5V	±10V	-	300mW (Tj)	7 Ohm @ 154mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75, SOT-416
NTA4153NT1	ON Semiconductor	MOSFET N-CH 20V 915MA SOT-416 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 915mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.82nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 16V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 300mW (Tj) Rds On (Max) @ Id, Vgs: 230 mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75, SOT-416 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock32,844	MOSFET (Metal Oxide)	20V	915mA (Ta)	1.5V, 4.5V	1.1V @ 250µA	1.82nC @ 4.5V	110pF @ 16V	±6V	-	300mW (Tj)	230 mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75, SOT-416
NTA4151PT1	ON Semiconductor	MOSFET P-CH 20V 0.76A SOT-416 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 760mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 5V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 301mW (Tj) Rds On (Max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75, SOT-416 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock104,760	MOSFET (Metal Oxide)	20V	760mA (Tj)	1.8V, 4.5V	450mV @ 250µA	2.1nC @ 4.5V	156pF @ 5V	±6V	-	301mW (Tj)	360 mOhm @ 350mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75, SOT-416
NILMS4501NR2	ON Semiconductor	MOSFET N-CH 24V 9.5A 4-LLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V Vgs (Max): ±10V FET Feature: Current Sensing Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-PLLP Package / Case: 4-DFN	Package: 4-DFN	Stock7,760	MOSFET (Metal Oxide)	24V	9.5A (Ta)	10V	2V @ 250µA	25nC @ 10V	1500pF @ 6V	±10V	Current Sensing	1.4W (Ta)	13 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	4-PLLP	4-DFN
MTP20N15E	ON Semiconductor	MOSFET N-CH 150V 20A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1627pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 112W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock89,580	MOSFET (Metal Oxide)	150V	20A (Tc)	10V	4V @ 250µA	55.9nC @ 10V	1627pF @ 25V	±20V	-	112W (Tc)	130 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
MTB50P03HDLG	ON Semiconductor	MOSFET P-CH 30V 50A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock780,000	MOSFET (Metal Oxide)	30V	50A (Tc)	5V	2V @ 250µA	100nC @ 5V	4900pF @ 25V	±15V	-	2.5W (Ta), 125W (Tc)	25 mOhm @ 25A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MMSF7P03HDR2G	ON Semiconductor	MOSFET P-CH 30V 7A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75.8nC @ 6V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock498,552	MOSFET (Metal Oxide)	30V	7A (Ta)	4.5V, 10V	1V @ 250µA	75.8nC @ 6V	1680pF @ 24V	±20V	-	2.5W (Ta)	35 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
MMSF7P03HDR2	ON Semiconductor	MOSFET P-CH 30V 7A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75.8nC @ 6V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock42,000	MOSFET (Metal Oxide)	30V	7A (Ta)	4.5V, 10V	1V @ 250µA	75.8nC @ 6V	1680pF @ 24V	±20V	-	2.5W (Ta)	35 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
MMSF3P02HDR2SG	ON Semiconductor	MOSFET P-CH 20V 5.6A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,184	MOSFET (Metal Oxide)	20V	5.6A (Ta)	4.5V, 10V	2V @ 250µA	46nC @ 10V	1400pF @ 16V	±20V	-	2.5W (Ta)	75 mOhm @ 3A, 10V	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
MMDF3N02HDR2	ON Semiconductor	MOSFET P-CH 20V 3.8A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,856	MOSFET (Metal Oxide)	20V	3.8A (Ta)	4.5V, 10V	2V @ 250µA	18nC @ 10V	630pF @ 16V	±20V	-	2W (Ta)	90 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
MMBF170LT3	ON Semiconductor	MOSFET N-CH 60V 500MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock240,000	MOSFET (Metal Oxide)	60V	500mA (Ta)	10V	3V @ 1mA	-	60pF @ 10V	±20V	-	225mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
MGSF1N03LT3G	ON Semiconductor	MOSFET N-CH 30V 1.6A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 420mW (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock379,908	MOSFET (Metal Oxide)	30V	1.6A (Ta)	4.5V, 10V	2.4V @ 250µA	-	140pF @ 5V	±20V	-	420mW (Ta)	100 mOhm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
MGSF1N03LT3	ON Semiconductor	MOSFET N-CH 30V 1.6A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 420mW (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,048	MOSFET (Metal Oxide)	30V	1.6A (Ta)	4.5V, 10V	2.4V @ 250µA	-	140pF @ 5V	±20V	-	420mW (Ta)	100 mOhm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
BSS138LT3	ON Semiconductor	MOSFET N-CH 50V 200MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,128	MOSFET (Metal Oxide)	50V	200mA (Ta)	5V	1.5V @ 1mA	-	50pF @ 25V	±20V	-	225mW (Ta)	3.5 Ohm @ 200mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
BSS123LT3G	ON Semiconductor	MOSFET N-CH 100V 170MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,904	MOSFET (Metal Oxide)	100V	170mA (Ta)	10V	2.8V @ 1mA	-	20pF @ 25V	±20V	-	225mW (Ta)	6 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
BSS123LT3	ON Semiconductor	MOSFET N-CH 100V 170MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,312	MOSFET (Metal Oxide)	100V	170mA (Ta)	10V	2.8V @ 1mA	-	20pF @ 25V	±20V	-	225mW (Ta)	6 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3