Page 61 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NTD3808N-1G
ON Semiconductor

MOSFET N-CH 16V 12A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,848
NTB5605T4G
ON Semiconductor

MOSFET P-CH 60V 18.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,192
NTMFS4841NT3G
ON Semiconductor

MOSFET N-CH 30V 8.3A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock6,032
NTMFS4841NHT3G
ON Semiconductor

MOSFET N-CH 30V 8.6A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock432,000
NTMFS4839NT3G
ON Semiconductor

MOSFET N-CH 30V 9.5A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock2,160
NTMFS4839NT1G
ON Semiconductor

MOSFET N-CH 30V 9.5A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock7,608
NTMFS4839NHT3G
ON Semiconductor

MOSFET N-CH 30V 9.5A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock3,312
NTMFS4837NT3G
ON Semiconductor

MOSFET N-CH 30V 10A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock2,560
NTMFS4837NHT3G
ON Semiconductor

MOSFET N-CH 30V 10.2A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock36,000
NTMFS4836NT3G
ON Semiconductor

MOSFET N-CH 30V 11A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock40,548
NTMFS4835NT3G
ON Semiconductor

MOSFET N-CH 30V 12A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock3,696
NTMFS4834NT3G
ON Semiconductor

MOSFET N-CH 30V 13A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock2,944
NTMFS4744NT3G
ON Semiconductor

MOSFET N-CH 30V 7A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock7,408
NTLJS4149PTAG
ON Semiconductor

MOSFET P-CH 30V 2.7A 6-WDFN

Package: 6-WDFN Exposed Pad

Stock4,144
NTLJS3113PTAG
ON Semiconductor

MOSFET P-CH 20V 3.5A 6-WDFN

Package: 6-WDFN Exposed Pad

Stock2,896
NTLJS2103PTAG
ON Semiconductor

MOSFET P-CH 12V 3.5A 6-WDFN

Package: 6-WDFN Exposed Pad

Stock113,700
NTLJF4156NTAG
ON Semiconductor

MOSFET N-CH 30V 2.5A 6-WDFN

Package: 6-WDFN Exposed Pad

Stock13,200
NTLJF3118NTBG
ON Semiconductor

MOSFET N-CH 20V 2.6A 6-WDFN

Package: 6-WDFN Exposed Pad

Stock5,104
NTLJF3118NTAG
ON Semiconductor

MOSFET N-CH 20V 2.6A 6-WDFN

Package: 6-WDFN Exposed Pad

Stock2,016
NTLJF3117PTAG
ON Semiconductor

MOSFET P-CH 20V 2.3A 6-WDFN

Package: 6-WDFN Exposed Pad

Stock6,128

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTD3808N-1G	ON Semiconductor	MOSFET N-CH 16V 12A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,848	MOSFET (Metal Oxide)	16V	12A (Ta), 76A (Tc)	4.5V, 10V	2.5V @ 250µA	21nC @ 4.5V	1660pF @ 12V	±16V	-	1.3W (Ta), 52W (Tc)	5.8 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTB5605T4G	ON Semiconductor	MOSFET P-CH 60V 18.5A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 8.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,192	MOSFET (Metal Oxide)	60V	18.5A (Ta)	5V	2V @ 250µA	22nC @ 5V	1190pF @ 25V	±20V	-	88W (Tc)	140 mOhm @ 8.5A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTMFS4841NT3G	ON Semiconductor	MOSFET N-CH 30V 8.3A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1436pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 870mW (Ta), 41.7W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock6,032	MOSFET (Metal Oxide)	30V	8.3A (Ta), 57A (Tc)	4.5V, 10V	2.5V @ 250µA	17nC @ 4.5V	1436pF @ 12V	±20V	-	870mW (Ta), 41.7W (Tc)	7 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4841NHT3G	ON Semiconductor	MOSFET N-CH 30V 8.6A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 2113pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 870mW (Ta), 41.7W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock432,000	MOSFET (Metal Oxide)	30V	8.6A (Ta), 59A (Tc)	4.5V, 10V	2.5V @ 250µA	33nC @ 11.5V	2113pF @ 12V	±20V	-	870mW (Ta), 41.7W (Tc)	7 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4839NT3G	ON Semiconductor	MOSFET N-CH 30V 9.5A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1588pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 870mW (Ta), 41.7W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock2,160	MOSFET (Metal Oxide)	30V	9.5A (Ta), 64A (Tc)	4.5V, 11.5V	2.5V @ 250µA	18nC @ 4.5V	1588pF @ 12V	±20V	-	870mW (Ta), 41.7W (Tc)	5.5 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4839NT1G	ON Semiconductor	MOSFET N-CH 30V 9.5A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1588pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 870mW (Ta), 41.7W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock7,608	MOSFET (Metal Oxide)	30V	9.5A (Ta), 64A (Tc)	4.5V, 11.5V	2.5V @ 250µA	18nC @ 4.5V	1588pF @ 12V	±20V	-	870mW (Ta), 41.7W (Tc)	5.5 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4839NHT3G	ON Semiconductor	MOSFET N-CH 30V 9.5A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43.5nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 2354pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 870mW (Ta), 42.4W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock3,312	MOSFET (Metal Oxide)	30V	9.5A (Ta), 64A (Tc)	4.5V, 11.5V	2.5V @ 250µA	43.5nC @ 11.5V	2354pF @ 12V	±20V	-	870mW (Ta), 42.4W (Tc)	5.5 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4837NT3G	ON Semiconductor	MOSFET N-CH 30V 10A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2048pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 880mW (Ta), 47.2W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock2,560	MOSFET (Metal Oxide)	30V	10A (Ta), 74A (Tc)	4.5V, 11.5V	2.5V @ 250µA	22nC @ 4.5V	2048pF @ 12V	±20V	-	880mW (Ta), 47.2W (Tc)	5 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4837NHT3G	ON Semiconductor	MOSFET N-CH 30V 10.2A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3016pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 880mW (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock36,000	MOSFET (Metal Oxide)	30V	10.2A (Ta), 75A (Tc)	4.5V, 11.5V	2.5V @ 250µA	23.8nC @ 4.5V	3016pF @ 12V	±20V	-	880mW (Ta), 48W (Tc)	5 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4836NT3G	ON Semiconductor	MOSFET N-CH 30V 11A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2677pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890mW (Ta), 55.6W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock40,548	MOSFET (Metal Oxide)	30V	11A (Ta), 90A (Tc)	4.5V, 11.5V	2.5V @ 250µA	28nC @ 4.5V	2677pF @ 12V	±20V	-	890mW (Ta), 55.6W (Tc)	4 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4835NT3G	ON Semiconductor	MOSFET N-CH 30V 12A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890mW (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock3,696	MOSFET (Metal Oxide)	30V	13A (Ta), 130A (Tc)	4.5V, 11.5V	2.5V @ 250µA	52nC @ 11.5V	3100pF @ 12V	±20V	-	890mW (Ta), 62.5W (Tc)	3.5 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4834NT3G	ON Semiconductor	MOSFET N-CH 30V 13A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta), 86.2W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock2,944	MOSFET (Metal Oxide)	30V	13A (Ta), 130A (Tc)	4.5V, 11.5V	2.5V @ 250µA	48nC @ 4.5V	4500pF @ 12V	±20V	-	900mW (Ta), 86.2W (Tc)	3 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4744NT3G	ON Semiconductor	MOSFET N-CH 30V 7A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 880mW (Ta), 47.2W (Tc) Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock7,408	MOSFET (Metal Oxide)	30V	7A (Ta)	4.5V, 11.5V	2.5V @ 250µA	17nC @ 4.5V	1300pF @ 12V	±20V	-	880mW (Ta), 47.2W (Tc)	7.6 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTLJS4149PTAG	ON Semiconductor	MOSFET P-CH 30V 2.7A 6-WDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 62 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WDFN (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock4,144	MOSFET (Metal Oxide)	30V	2.7A (Ta)	2.5V, 4.5V	1V @ 250µA	15nC @ 4.5V	960pF @ 15V	±12V	-	700mW (Ta)	62 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN (2x2)	6-WDFN Exposed Pad
NTLJS3113PTAG	ON Semiconductor	MOSFET P-CH 20V 3.5A 6-WDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1329pF @ 16V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WDFN (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock2,896	MOSFET (Metal Oxide)	20V	3.5A (Ta)	1.5V, 4.5V	1V @ 250µA	15.7nC @ 4.5V	1329pF @ 16V	±8V	-	700mW (Ta)	40 mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN (2x2)	6-WDFN Exposed Pad
NTLJS2103PTAG	ON Semiconductor	MOSFET P-CH 12V 3.5A 6-WDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1157pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WDFN (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock113,700	MOSFET (Metal Oxide)	12V	3.5A (Ta)	1.2V, 4.5V	800mV @ 250µA	15nC @ 4.5V	1157pF @ 6V	±8V	-	700mW (Ta)	40 mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN (2x2)	6-WDFN Exposed Pad
NTLJF4156NTAG	ON Semiconductor	MOSFET N-CH 30V 2.5A 6-WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 15V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 710mW (Ta) Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WDFN (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock13,200	MOSFET (Metal Oxide)	30V	2.5A (Tj)	1.5V, 4.5V	1V @ 250µA	6.5nC @ 4.5V	427pF @ 15V	±8V	Schottky Diode (Isolated)	710mW (Ta)	70 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN (2x2)	6-WDFN Exposed Pad
NTLJF3118NTBG	ON Semiconductor	MOSFET N-CH 20V 2.6A 6-WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WDFN (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock5,104	MOSFET (Metal Oxide)	20V	2.6A (Ta)	1.8V, 4.5V	1V @ 250µA	3.7nC @ 4.5V	271pF @ 10V	±12V	Schottky Diode (Isolated)	700mW (Ta)	65 mOhm @ 3.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN (2x2)	6-WDFN Exposed Pad
NTLJF3118NTAG	ON Semiconductor	MOSFET N-CH 20V 2.6A 6-WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WDFN (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock2,016	MOSFET (Metal Oxide)	20V	2.6A (Ta)	1.8V, 4.5V	1V @ 250µA	3.7nC @ 4.5V	271pF @ 10V	±12V	Schottky Diode (Isolated)	700mW (Ta)	65 mOhm @ 3.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN (2x2)	6-WDFN Exposed Pad
NTLJF3117PTAG	ON Semiconductor	MOSFET P-CH 20V 2.3A 6-WDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 710mW (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WDFN (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock6,128	MOSFET (Metal Oxide)	20V	2.3A (Ta)	1.8V, 4.5V	1V @ 250µA	6.2nC @ 4.5V	531pF @ 10V	±8V	Schottky Diode (Isolated)	710mW (Ta)	100 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN (2x2)	6-WDFN Exposed Pad
NTK3142PT5G	ON Semiconductor	MOSFET P-CH 20V 0.215A SOT-723 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 215mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15.3pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 280mW (Ta) Rds On (Max) @ Id, Vgs: 4 Ohm @ 260mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-723 Package / Case: SOT-723	Package: SOT-723	Stock192,000	MOSFET (Metal Oxide)	20V	215mA (Ta)	1.8V, 4.5V	1.3V @ 250µA	-	15.3pF @ 10V	±8V	-	280mW (Ta)	4 Ohm @ 260mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-723	SOT-723
NTK3134NT5G	ON Semiconductor	MOSFET N-CH 20V 750MA SOT-723 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 350 mOhm @ 890mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-723 Package / Case: SOT-723	Package: SOT-723	Stock704,400	MOSFET (Metal Oxide)	20V	750mA (Ta)	1.5V, 4.5V	1.2V @ 250µA	-	120pF @ 16V	±6V	-	310mW (Ta)	350 mOhm @ 890mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-723	SOT-723
NTHD3133PFT3G	ON Semiconductor	MOSFET P-CH 20V 3.2A CHIPFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock4,800	MOSFET (Metal Oxide)	20V	3.2A (Tj)	1.8V, 4.5V	1.5V @ 250µA	7.4nC @ 4.5V	680pF @ 10V	±8V	Schottky Diode (Isolated)	1.1W (Ta)	80 mOhm @ 3.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead
NTHD3133PFT1G	ON Semiconductor	MOSFET P-CH 20V 3.2A CHIPFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock568,728	MOSFET (Metal Oxide)	20V	3.2A (Tj)	1.8V, 4.5V	1.5V @ 250µA	7.4nC @ 4.5V	680pF @ 10V	±8V	Schottky Diode (Isolated)	1.1W (Ta)	80 mOhm @ 3.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead
NTGS4111PT2G	ON Semiconductor	MOSFET P-CH 30V 2.6A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 630mW (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock434,568	MOSFET (Metal Oxide)	30V	2.6A (Ta)	4.5V, 10V	3V @ 250µA	32nC @ 10V	750pF @ 15V	±20V	-	630mW (Ta)	60 mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
NTGS3447PT1G	ON Semiconductor	MOSFET P-CH 12V 3.4A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1053pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock426,348	MOSFET (Metal Oxide)	12V	3.4A (Ta)	1.8V, 4.5V	1V @ 250µA	15nC @ 4.5V	1053pF @ 6V	±8V	-	700mW (Ta)	40 mOhm @ 4.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
NTGS3443T2G	ON Semiconductor	MOSFET P-CH 20V 2.2A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 5V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 4.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock375,024	MOSFET (Metal Oxide)	20V	2.2A (Ta)	2.5V, 4.5V	1.5V @ 250µA	15nC @ 4.5V	565pF @ 5V	±12V	-	500mW (Ta)	65 mOhm @ 4.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
NTGS3443BT1G	ON Semiconductor	MOSFET P-CH 20V 2.7A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 819pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock266,700	MOSFET (Metal Oxide)	20V	2.7A (Ta)	2.5V, 4.5V	1.4V @ 250µA	11nC @ 4.5V	819pF @ 10V	±12V	-	700mW (Ta)	60 mOhm @ 3.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6