Page 62 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NTMFS4849NT3G
ON Semiconductor

MOSFET N-CH 30V 10.2A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock3,312
NTMFS4849NT1G
ON Semiconductor

MOSFET N-CH 30V 10.2A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock14,016
NTMFS4847NT3G
ON Semiconductor

MOSFET N-CH 30V 11.5A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock3,072
NTMFS4847NT1G
ON Semiconductor

MOSFET N-CH 30V 11.5A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock152,832
NTMFS4846NT3G
ON Semiconductor

MOSFET N-CH 30V 12.7A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock5,664
NTMFS4845NT3G
ON Semiconductor

MOSFET N-CH 30V 13.7A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock5,328
NTMFS4821NT3G
ON Semiconductor

MOSFET N-CH 30V 8.8A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock6,848
NTK3043NAT5G
ON Semiconductor

MOSFET N-CH 20V 210MA SOT-723

Package: SOT-723

Stock4,128
NTHS5441PT1G
ON Semiconductor

MOSFET P-CH 20V 3.9A CHIPFET

Package: 8-SMD, Flat Lead

Stock2,880
NTHD2110TT1G
ON Semiconductor

MOSFET P-CH 12V 4.5A CHIPFET

Package: 8-SMD, Flat Lead

Stock4,896
NTGD3147FT1G
ON Semiconductor

MOSFET P-CH 20V 2.2A 6-TSOP

Package: SOT-23-6

Stock324,000
NTD4804NAT4G
ON Semiconductor

MOSFET N-CH 30V 14.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,760
NTMS4872NR2G
ON Semiconductor

MOSFET N-CH 30V 6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock570,708
NTMS4176PR2G
ON Semiconductor

MOSFET P-CH 30V 5.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock937,548
NTMD4884NFR2G
ON Semiconductor

MOSFET N-CH 30V 3.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock71,808
NTGD4169FT1G
ON Semiconductor

MOSFET N-CH 30V 2.6A 6-TSOP

Package: SOT-23-6

Stock360,012
NTF2955PT1G
ON Semiconductor

MOSFET P-CH 60V 1.7A SOT-223

Package: TO-261-4, TO-261AA

Stock120,636
NTD4863NAT4G
ON Semiconductor

MOSFET N-CH 25V 9.2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock253,140
NTD4860NAT4G
ON Semiconductor

MOSFET N-CH 25V 10.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock196,764
NTD4857NAT4G
ON Semiconductor

MOSFET N-CH 25V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock120,012

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTMFS4849NT3G	ON Semiconductor	MOSFET N-CH 30V 10.2A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 870mW (Ta), 42.4W (Tc) Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock3,312	MOSFET (Metal Oxide)	30V	10.2A (Ta), 71A (Tc)	4.5V, 11.5V	2.5V @ 250µA	22nC @ 4.5V	2040pF @ 12V	±16V	-	870mW (Ta), 42.4W (Tc)	5.1 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4849NT1G	ON Semiconductor	MOSFET N-CH 30V 10.2A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 870mW (Ta), 42.4W (Tc) Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock14,016	MOSFET (Metal Oxide)	30V	10.2A (Ta), 71A (Tc)	4.5V, 11.5V	2.5V @ 250µA	22nC @ 4.5V	2040pF @ 12V	±16V	-	870mW (Ta), 42.4W (Tc)	5.1 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4847NT3G	ON Semiconductor	MOSFET N-CH 30V 11.5A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2614pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 880mW (Ta), 48.4W (Tc) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock3,072	MOSFET (Metal Oxide)	30V	11.5A (Ta), 85A (Tc)	4.5V, 11.5V	2.5V @ 250µA	28nC @ 4.5V	2614pF @ 12V	±16V	-	880mW (Ta), 48.4W (Tc)	4.1 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4847NT1G	ON Semiconductor	MOSFET N-CH 30V 11.5A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2614pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 880mW (Ta), 48.4W (Tc) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock152,832	MOSFET (Metal Oxide)	30V	11.5A (Ta), 85A (Tc)	4.5V, 11.5V	2.5V @ 250µA	28nC @ 4.5V	2614pF @ 12V	±16V	-	880mW (Ta), 48.4W (Tc)	4.1 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4846NT3G	ON Semiconductor	MOSFET N-CH 30V 12.7A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890mW (Ta), 55.5W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock5,664	MOSFET (Metal Oxide)	30V	12.7A (Ta), 100A (Tc)	4.5V, 11.5V	2.5V @ 250µA	53nC @ 11.5V	3250pF @ 12V	±20V	-	890mW (Ta), 55.5W (Tc)	3.4 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4845NT3G	ON Semiconductor	MOSFET N-CH 30V 13.7A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 115A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 890mW (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock5,328	MOSFET (Metal Oxide)	30V	13.7A (Ta), 115A (Tc)	4.5V, 10V	2.5V @ 250µA	62nC @ 11.5V	3720pF @ 12V	±16V	-	890mW (Ta), 62.5W (Tc)	2.9 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4821NT3G	ON Semiconductor	MOSFET N-CH 30V 8.8A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 58.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 870mW (Ta), 38.5W (Tc) Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock6,848	MOSFET (Metal Oxide)	30V	8.8A (Ta), 58.5A (Tc)	4.5V, 10V	2.5V @ 250µA	16nC @ 4.5V	1400pF @ 12V	±20V	-	870mW (Ta), 38.5W (Tc)	6.95 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTK3043NAT5G	ON Semiconductor	MOSFET N-CH 20V 210MA SOT-723 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.65V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 10mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-723 Package / Case: SOT-723	Package: SOT-723	Stock4,128	MOSFET (Metal Oxide)	20V	210mA (Ta)	1.65V, 4.5V	1.3V @ 250µA	-	11pF @ 10V	±10V	-	310mW (Ta)	3.4 Ohm @ 10mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-723	SOT-723
NTHS5441PT1G	ON Semiconductor	MOSFET P-CH 20V 3.9A CHIPFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 5V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock2,880	MOSFET (Metal Oxide)	20V	3.9A (Ta)	-	1.2V @ 250µA	22nC @ 4.5V	710pF @ 5V	-	-	1.3W (Ta)	46 mOhm @ 3.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead
NTHD2110TT1G	ON Semiconductor	MOSFET P-CH 12V 4.5A CHIPFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1072pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock4,896	MOSFET (Metal Oxide)	12V	4.5A (Ta)	1.8V, 4.5V	850mV @ 250µA	14nC @ 4.5V	1072pF @ 6V	±8V	-	1.1W (Ta)	40 mOhm @ 6.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead
NTGD3147FT1G	ON Semiconductor	MOSFET P-CH 20V 2.2A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 145 mOhm @ 2.2A, 4.5V Operating Temperature: -25°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock324,000	MOSFET (Metal Oxide)	20V	2.2A (Ta)	2.5V, 4.5V	1.5V @ 250µA	5.5nC @ 4.5V	400pF @ 10V	±12V	Schottky Diode (Isolated)	1W (Ta)	145 mOhm @ 2.2A, 4.5V	-25°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
NTD4804NAT4G	ON Semiconductor	MOSFET N-CH 30V 14.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4490pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,760	MOSFET (Metal Oxide)	30V	14.5A (Ta), 124A (Tc)	4.5V, 11.5V	2.5V @ 250µA	40nC @ 4.5V	4490pF @ 12V	±20V	-	1.43W (Ta), 93.75W (Tc)	4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTMS4872NR2G	ON Semiconductor	MOSFET N-CH 30V 6A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 10.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 820mW (Ta) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock570,708	MOSFET (Metal Oxide)	30V	6A (Ta), 10.2A (Tc)	4.5V, 10V	2.5V @ 250µA	15nC @ 4.5V	1700pF @ 15V	±20V	-	820mW (Ta)	13.5 mOhm @ 10.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTMS4176PR2G	ON Semiconductor	MOSFET P-CH 30V 5.5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 24V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 810mW (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 9.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock937,548	MOSFET (Metal Oxide)	30V	5.5A (Ta)	4.5V, 10V	2.5V @ 250µA	17nC @ 4.5V	1720pF @ 24V	±25V	-	810mW (Ta)	18 mOhm @ 9.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTMD4884NFR2G	ON Semiconductor	MOSFET N-CH 30V 3.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 770mW (Ta) Rds On (Max) @ Id, Vgs: 48 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock71,808	MOSFET (Metal Oxide)	30V	3.3A (Ta)	4.5V, 10V	2.5V @ 250µA	4.2nC @ 4.5V	360pF @ 15V	±20V	Schottky Diode (Isolated)	770mW (Ta)	48 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTGD4169FT1G	ON Semiconductor	MOSFET N-CH 30V 2.6A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.6A, 4.5V Operating Temperature: -25°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock360,012	MOSFET (Metal Oxide)	30V	2.6A (Ta)	2.5V, 4.5V	1.5V @ 250µA	5.5nC @ 4.5V	295pF @ 15V	±12V	Schottky Diode (Isolated)	900mW (Ta)	90 mOhm @ 2.6A, 4.5V	-25°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
NTF2955PT1G	ON Semiconductor	MOSFET P-CH 60V 1.7A SOT-223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 185 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock120,636	MOSFET (Metal Oxide)	60V	1.7A (Ta)	10V	4V @ 1mA	14.3nC @ 10V	492pF @ 25V	±20V	-	1W (Ta)	185 mOhm @ 2.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
NTD4863NAT4G	ON Semiconductor	MOSFET N-CH 25V 9.2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 12V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc) Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock253,140	MOSFET (Metal Oxide)	25V	9.2A (Ta), 49A (Tc)	-	2.5V @ 250µA	13.5nC @ 4.5V	990pF @ 12V	-	-	1.27W (Ta), 36.6W (Tc)	9.3 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4860NAT4G	ON Semiconductor	MOSFET N-CH 25V 10.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1308pF @ 12V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.28W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock196,764	MOSFET (Metal Oxide)	25V	10.4A (Ta), 65A (Tc)	-	2.5V @ 250µA	16.5nC @ 4.5V	1308pF @ 12V	-	-	1.28W (Ta), 50W (Tc)	7.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4857NAT4G	ON Semiconductor	MOSFET N-CH 25V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 12V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock120,012	MOSFET (Metal Oxide)	25V	12A (Ta), 78A (Tc)	-	2.5V @ 250µA	24nC @ 4.5V	1960pF @ 12V	-	-	-	5.7 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD3817NT4G	ON Semiconductor	MOSFET N-CH 16V 7.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 34.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 702pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 25.9W (Tc) Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,248	MOSFET (Metal Oxide)	16V	7.6A (Ta), 34.5A (Tc)	4.5V, 10V	2.5V @ 250µA	10.5nC @ 4.5V	702pF @ 12V	±16V	-	1.2W (Ta), 25.9W (Tc)	13.9 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD3817N-35G	ON Semiconductor	MOSFET N-CH 16V 7.6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 34.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 702pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 25.9W (Tc) Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock2,992	MOSFET (Metal Oxide)	16V	7.6A (Ta), 34.5A (Tc)	4.5V, 10V	2.5V @ 250µA	10.5nC @ 4.5V	702pF @ 12V	±16V	-	1.2W (Ta), 25.9W (Tc)	13.9 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
NTD3817N-1G	ON Semiconductor	MOSFET N-CH 16V 7.6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 34.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 702pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 25.9W (Tc) Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,992	MOSFET (Metal Oxide)	16V	7.6A (Ta), 34.5A (Tc)	4.5V, 10V	2.5V @ 250µA	10.5nC @ 4.5V	702pF @ 12V	±16V	-	1.2W (Ta), 25.9W (Tc)	13.9 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD3813NT4G	ON Semiconductor	MOSFET N-CH 16V 9.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 963pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc) Rds On (Max) @ Id, Vgs: 8.75 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,112	MOSFET (Metal Oxide)	16V	9.6A (Ta), 51A (Tc)	4.5V, 10V	2.5V @ 250µA	12.8nC @ 4.5V	963pF @ 12V	±16V	-	1.2W (Ta), 34.9W (Tc)	8.75 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD3813N-35G	ON Semiconductor	MOSFET N-CH 16V 9.6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 963pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc) Rds On (Max) @ Id, Vgs: 8.75 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock3,712	MOSFET (Metal Oxide)	16V	9.6A (Ta), 51A (Tc)	4.5V, 10V	2.5V @ 250µA	12.8nC @ 4.5V	963pF @ 12V	±16V	-	1.2W (Ta), 34.9W (Tc)	8.75 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
NTD3813N-1G	ON Semiconductor	MOSFET N-CH 16V 9.6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 963pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc) Rds On (Max) @ Id, Vgs: 8.75 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,112	MOSFET (Metal Oxide)	16V	9.6A (Ta), 51A (Tc)	4.5V, 10V	2.5V @ 250µA	12.8nC @ 4.5V	963pF @ 12V	±16V	-	1.2W (Ta), 34.9W (Tc)	8.75 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD3808NT4G	ON Semiconductor	MOSFET N-CH 16V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock120,048	MOSFET (Metal Oxide)	16V	12A (Ta), 76A (Tc)	4.5V, 10V	2.5V @ 250µA	21nC @ 4.5V	1660pF @ 12V	±16V	-	1.3W (Ta), 52W (Tc)	5.8 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD3808N-35G	ON Semiconductor	MOSFET N-CH 16V 12A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock4,512	MOSFET (Metal Oxide)	16V	12A (Ta), 76A (Tc)	4.5V, 10V	2.5V @ 250µA	21nC @ 4.5V	1660pF @ 12V	±16V	-	1.3W (Ta), 52W (Tc)	5.8 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak