Page 31 - Rohm Semiconductor Products - Transistors - FETs, MOSFETs - Single

RTQ040P02TR
Rohm Semiconductor

MOSFET P-CH 20V 4A TSMT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock890,664
RS3E095BNGZETB
Rohm Semiconductor

NCH 30V 9.5A MIDDLE POWER MOSFET

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,112
RS1E240BNTB
Rohm Semiconductor

MOSFET N-CH 30V 24A 8HSOP

Package: 8-PowerTDFN

Stock6,256
QS5U12TR
Rohm Semiconductor

MOSFET N-CH 30V 2A TSMT5

Package: SOT-23-5 Thin, TSOT-23-5

Stock7,856
RRL025P03TR
Rohm Semiconductor

MOSFET P-CH 30V 2.5A TUMT6

Package: 6-SMD, Flat Leads

Stock72,000
RSY160P05TL
Rohm Semiconductor

MOSFET P-CH 45V 16A TCPT3

Package: 3-SMD, Flat Leads

Stock10,008
RS1E150GNTB
Rohm Semiconductor

MOSFET N-CH 30V 15A 8-HSOP

Package: 8-PowerTDFN

Stock5,296
RQ1C075UNTR
Rohm Semiconductor

MOSFET N-CH 20V 7.5A TSMT8

Package: 8-SMD, Flat Lead

Stock2,302,932
RTF010P02TL
Rohm Semiconductor

MOSFET P-CH 20V 1A TUMT3

Package: 3-SMD, Flat Leads

Stock2,352,012
RQ3E180BNTB
Rohm Semiconductor

MOSFET N-CH 30V 18A 8HSMT

Package: 8-PowerVDFN

Stock7,120
RQ6C050BCTCR
Rohm Semiconductor

PCH -20V -5A MIDDLE POWER MOSFET

Package: SC-95-6

Stock3,472
RF4E110BNTR
Rohm Semiconductor

MOSFET N-CH 30V 11A 8-HUML

Package: 8-PowerUDFN

Stock3,472
RRQ030P03TR
Rohm Semiconductor

MOSFET P-CH 30V 3A TSMT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock743,604
RW1A020ZPT2R
Rohm Semiconductor

MOSFET P-CH 12V 2A WEMT6

Package: SOT-563, SOT-666

Stock3,104
RS1E200BNTB
Rohm Semiconductor

MOSFET N-CH 30V 20A 8HSOP

Package: 8-PowerTDFN

Stock2,752
RTF015N03TL
Rohm Semiconductor

MOSFET N-CH 30V 1.5A TUMT3

Package: 3-SMD, Flat Leads

Stock769,380
RSF014N03TL
Rohm Semiconductor

MOSFET N-CH 30V 1.4A TUMT3

Package: 3-SMD, Flat Leads

Stock156,012
QS5U36TR
Rohm Semiconductor

MOSFET N-CH 20V 2.5A TSMT5

Package: SOT-23-5 Thin, TSOT-23-5

Stock5,600
RTR025N05TL
Rohm Semiconductor

MOSFET N-CH 45V 2.5A TSMT3

Package: SC-96

Stock558,684
RS1E130GNTB
Rohm Semiconductor

MOSFET N-CH 30V 13A 8-HSOP

Package: 8-PowerTDFN

Stock3,616

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RTQ040P02TR	Rohm Semiconductor	MOSFET P-CH 20V 4A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock890,664	MOSFET (Metal Oxide)	20V	4A (Ta)	2.5V, 4.5V	2V @ 1mA	12.2nC @ 4.5V	1350pF @ 10V	±12V	-	1.25W (Ta)	50 mOhm @ 4A, 4.5V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RS3E095BNGZETB	Rohm Semiconductor	NCH 30V 9.5A MIDDLE POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 14.6 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,112	MOSFET (Metal Oxide)	30V	9.5A (Ta)	10V	2.5V @ 1mA	8.3nC @ 4.5V	680pF @ 15V	±20V	-	2W (Tc)	14.6 mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RS1E240BNTB	Rohm Semiconductor	MOSFET N-CH 30V 24A 8HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 24A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,256	MOSFET (Metal Oxide)	30V	24A (Ta)	4.5V, 10V	2.5V @ 1mA	70nC @ 10V	3900pF @ 15V	±20V	-	3W (Ta), 30W (Tc)	3.2 mOhm @ 24A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
QS5U12TR	Rohm Semiconductor	MOSFET N-CH 30V 2A TSMT5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT5 Package / Case: SOT-23-5 Thin, TSOT-23-5	Package: SOT-23-5 Thin, TSOT-23-5	Stock7,856	MOSFET (Metal Oxide)	30V	2A (Ta)	2.5V, 4.5V	1.5V @ 1mA	3.9nC @ 4.5V	175pF @ 10V	±12V	Schottky Diode (Isolated)	1.25W (Ta)	100 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	TSMT5	SOT-23-5 Thin, TSOT-23-5
RRL025P03TR	Rohm Semiconductor	MOSFET P-CH 30V 2.5A TUMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock72,000	MOSFET (Metal Oxide)	30V	2.5A (Ta)	4V, 10V	2.5V @ 1mA	5.2nC @ 5V	480pF @ 10V	±20V	-	320mW (Ta)	75 mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	TUMT6	6-SMD, Flat Leads
RSY160P05TL	Rohm Semiconductor	MOSFET P-CH 45V 16A TCPT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TCPT3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock10,008	MOSFET (Metal Oxide)	45V	16A (Ta)	4V, 10V	2.5V @ 1mA	25.5nC @ 5V	2150pF @ 10V	±20V	-	20W (Tc)	50 mOhm @ 16A, 10V	150°C (TJ)	Surface Mount	TCPT3	3-SMD, Flat Leads
RS1E150GNTB	Rohm Semiconductor	MOSFET N-CH 30V 15A 8-HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 22.9W (Tc) Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,296	MOSFET (Metal Oxide)	30V	15A (Ta)	4.5V, 10V	2.5V @ 1mA	10nC @ 10V	590pF @ 15V	±20V	-	3W (Ta), 22.9W (Tc)	8.8 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
RQ1C075UNTR	Rohm Semiconductor	MOSFET N-CH 20V 7.5A TSMT8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock2,302,932	MOSFET (Metal Oxide)	20V	7.5A (Ta)	1.5V, 4.5V	1V @ 1mA	18nC @ 4.5V	1400pF @ 10V	±10V	-	700mW (Ta)	16 mOhm @ 7.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT8	8-SMD, Flat Lead
RTF010P02TL	Rohm Semiconductor	MOSFET P-CH 20V 1A TUMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock2,352,012	MOSFET (Metal Oxide)	20V	1A (Ta)	2.5V, 4.5V	2V @ 1mA	2.1nC @ 4.5V	150pF @ 10V	±12V	-	800mW (Ta)	390 mOhm @ 1A, 4.5V	150°C (TJ)	Surface Mount	TUMT3	3-SMD, Flat Leads
RQ3E180BNTB	Rohm Semiconductor	MOSFET N-CH 30V 18A 8HSMT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,120	MOSFET (Metal Oxide)	30V	39A (Tc)	4.5V, 10V	2.5V @ 1mA	37nC @ 4.5V	3500pF @ 15V	±20V	-	2W (Ta), 20W (Tc)	3.9 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
RQ6C050BCTCR	Rohm Semiconductor	PCH -20V -5A MIDDLE POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.25W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SC-95-6	Package: SC-95-6	Stock3,472	MOSFET (Metal Oxide)	20V	5A (Tc)	4.5V	1.2V @ 1mA	10.4nC @ 4.5V	740pF @ 10V	±8V	-	1.25W (Tc)	36 mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SC-95-6
RF4E110BNTR	Rohm Semiconductor	MOSFET N-CH 30V 11A 8-HUML FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-HUML2020L8 (2x2) Package / Case: 8-PowerUDFN	Package: 8-PowerUDFN	Stock3,472	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	2V @ 250µA	24nC @ 10V	1200pF @ 15V	±20V	-	2W (Ta)	11.1 mOhm @ 11A, 10V	150°C (TJ)	Surface Mount	6-HUML2020L8 (2x2)	8-PowerUDFN
RRQ030P03TR	Rohm Semiconductor	MOSFET P-CH 30V 3A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock743,604	MOSFET (Metal Oxide)	30V	3A (Ta)	4V, 10V	2.5V @ 1mA	12nC @ 10V	480pF @ 10V	±20V	-	600mW (Ta)	75 mOhm @ 3A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RW1A020ZPT2R	Rohm Semiconductor	MOSFET P-CH 12V 2A WEMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WEMT Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock3,104	MOSFET (Metal Oxide)	12V	2A (Ta)	1.5V, 4.5V	1V @ 1mA	6.5nC @ 4.5V	770pF @ 6V	±10V	-	700mW (Ta)	105 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	6-WEMT	SOT-563, SOT-666
RS1E200BNTB	Rohm Semiconductor	MOSFET N-CH 30V 20A 8HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,752	MOSFET (Metal Oxide)	30V	20A (Ta)	4.5V, 10V	2.5V @ 1mA	59nC @ 10V	3100pF @ 15V	±20V	-	3W (Ta), 25W (Tc)	3.9 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
RTF015N03TL	Rohm Semiconductor	MOSFET N-CH 30V 1.5A TUMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock769,380	MOSFET (Metal Oxide)	30V	1.5A (Ta)	2.5V, 4.5V	1.5V @ 1mA	2.2nC @ 4.5V	80pF @ 10V	±12V	-	320mW (Ta)	240 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	TUMT3	3-SMD, Flat Leads
RSF014N03TL	Rohm Semiconductor	MOSFET N-CH 30V 1.4A TUMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock156,012	MOSFET (Metal Oxide)	30V	1.4A (Ta)	4V, 10V	2.5V @ 1mA	2nC @ 5V	70pF @ 10V	20V	-	800mW (Ta)	240 mOhm @ 1.4A, 10V	150°C (TJ)	Surface Mount	TUMT3	3-SMD, Flat Leads
QS5U36TR	Rohm Semiconductor	MOSFET N-CH 20V 2.5A TSMT5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Vgs (Max): ±10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 81 mOhm @ 2.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT5 Package / Case: SOT-23-5 Thin, TSOT-23-5	Package: SOT-23-5 Thin, TSOT-23-5	Stock5,600	MOSFET (Metal Oxide)	20V	2.5A (Ta)	1.5V, 4.5V	1.3V @ 1mA	3.5nC @ 4.5V	280pF @ 10V	±10V	Schottky Diode (Isolated)	1.25W (Ta)	81 mOhm @ 2.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT5	SOT-23-5 Thin, TSOT-23-5
RTR025N05TL	Rohm Semiconductor	MOSFET N-CH 45V 2.5A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock558,684	MOSFET (Metal Oxide)	45V	2.5A (Ta)	2.5V, 4.5V	1.5V @ 1mA	3.2nC @ 4.5V	250pF @ 10V	±12V	-	1W (Ta)	130 mOhm @ 2.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RS1E130GNTB	Rohm Semiconductor	MOSFET N-CH 30V 13A 8-HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 22.2W (Tc) Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 13A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,616	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	2.5V @ 1mA	7.9nC @ 10V	420pF @ 15V	±20V	-	3W (Ta), 22.2W (Tc)	11.7 mOhm @ 13A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
RMW200N03TB	Rohm Semiconductor	MOSFET N-CH 30V 20A 8PSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOP Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock22,770	MOSFET (Metal Oxide)	30V	20A (Ta)	4.5V, 10V	2.5V @ 1mA	29nC @ 10V	1780pF @ 15V	±20V	-	3W (Ta)	4.2 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	8-PSOP	8-SMD, Flat Lead
RSQ015N06TR	Rohm Semiconductor	MOSFET N-CH 60V 1.5A TSMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 290 mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock506,928	MOSFET (Metal Oxide)	60V	1.5A (Ta)	4V, 10V	2.5V @ 1mA	3.5nC @ 10V	110pF @ 10V	±20V	-	600mW (Ta)	290 mOhm @ 1.5A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RF4E070GNTR	Rohm Semiconductor	MOSFET N-CH 30V 7A 8-HUML FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 21.4 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-HUML2020L8 (2x2) Package / Case: 8-PowerUDFN	Package: 8-PowerUDFN	Stock5,376	MOSFET (Metal Oxide)	30V	7A (Ta)	4.5V, 10V	2.5V @ 250µA	4.8nC @ 10V	220pF @ 15V	±20V	-	2W (Ta)	21.4 mOhm @ 7A, 10V	150°C (TJ)	Surface Mount	6-HUML2020L8 (2x2)	8-PowerUDFN
RQ3E150GNTB	Rohm Semiconductor	MOSFET N-CH 30V 15A 8-HSMT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 17.2W (Tc) Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock35,220	MOSFET (Metal Oxide)	30V	15A (Ta)	4.5V, 10V	2.5V @ 1mA	15.3nC @ 10V	850pF @ 15V	±20V	-	2W (Ta), 17.2W (Tc)	6.1 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
RF6E045AJTCR	Rohm Semiconductor	NCH 30V 4.5A MIDDLE POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 23.7 mOhm @ 4.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock36,000	MOSFET (Metal Oxide)	30V	4.5A (Ta)	4.5V	1.5V @ 1mA	8.1nC @ 4.5V	900pF @ 15V	±12V	-	1W (Tc)	23.7 mOhm @ 4.5A, 4.5V	150°C (TJ)	Surface Mount	TUMT6	6-SMD, Flat Leads
RT1E050RPTR	Rohm Semiconductor	MOSFET P-CH 30V 5A TSST8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 36 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSST Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock2,928	MOSFET (Metal Oxide)	30V	5A (Ta)	4V, 10V	2.5V @ 1mA	13nC @ 5V	1300pF @ 10V	±20V	-	1.25W (Ta)	36 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	8-TSST	8-SMD, Flat Lead
RT1E040RPTR	Rohm Semiconductor	MOSFET P-CH 30V 4A TSST8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 550mW (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSST Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock4,352	MOSFET (Metal Oxide)	30V	4A (Ta)	4V, 10V	2.5V @ 1mA	20nC @ 10V	1000pF @ 10V	±20V	-	550mW (Ta)	45 mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	8-TSST	8-SMD, Flat Lead
RTR025P02TL	Rohm Semiconductor	MOSFET P-CH 20V 2.5A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 95 mOhm @ 2.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock2,184,756	MOSFET (Metal Oxide)	20V	2.5A (Ta)	2.5V, 4.5V	2V @ 1mA	7nC @ 4.5V	630pF @ 10V	±12V	-	1W (Ta)	95 mOhm @ 2.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96