Page 32 - Rohm Semiconductor Products - Transistors - FETs, MOSFETs - Single

RRH050P03GZETB
Rohm Semiconductor

MOSFET P-CH 30V 5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock30,000
RS3E135BNGZETB
Rohm Semiconductor

NCH 30V 13.5A MIDDLE POWER MOSFE

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,768
RF4E070BNTR
Rohm Semiconductor

MOSFET N-CH 30V 7A 8-HUML

Package: 8-PowerUDFN

Stock2,816
RMW150N03TB
Rohm Semiconductor

MOSFET N-CH 30V 15A 8PSOP

Package: 8-SMD, Flat Lead

Stock4,080
RS1G150MNTB
Rohm Semiconductor

MOSFET N-CH 40V 15A 8HSOP

Package: 8-PowerTDFN

Stock4,512
RZQ050P01TR
Rohm Semiconductor

MOSFET P-CH 12V 5A TSMT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock715,032
RCD051N20TL
Rohm Semiconductor

MOSFET N-CH 200V 5A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock18,624
RS1E200GNTB
Rohm Semiconductor

MOSFET N-CH 30V 20A 8-HSOP

Package: 8-PowerTDFN

Stock4,176
RQ3L050GNTB
Rohm Semiconductor

NCH 60V 12A MIDDLE POWER MOSFET

Package: 8-PowerVDFN

Stock5,808
RTQ035N03TR
Rohm Semiconductor

MOSFET N-CH 30V 3.5A TSMT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock3,995,916
RSR020P05TL
Rohm Semiconductor

MOSFET P-CH 45V 2A TSMT3

Package: SC-96

Stock5,056
RSR025P03TL
Rohm Semiconductor

MOSFET P-CH 30V 2.5A TSMT3

Package: SC-96

Stock566,124
RQ6E085BNTCR
Rohm Semiconductor

NCH 30V 8.5A MIDDLE POWER MOSFET

Package: SC-74, SOT-457

Stock2,048
RSQ035N03TR
Rohm Semiconductor

MOSFET N-CH 30V 3.5A TSMT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock440,604
RQ5C060BCTCL
Rohm Semiconductor

PCH -20V -6A MIDDLE POWER MOSFET

Package: SC-96

Stock7,728
RND030N20TL
Rohm Semiconductor

MOSFET N-CH 200V 3A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,888
RDD023N50TL
Rohm Semiconductor

MOSFET N-CH 500V 2A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,880
RSR025N03TL
Rohm Semiconductor

MOSFET N-CH 30V 2.5A TSMT3

Package: SC-96

Stock710,820
RF4E075ATTCR
Rohm Semiconductor

MOSFET P-CH 30V 7.5A 8DFN

Package: 8-PowerUDFN

Stock2,320
R6002ENDTL
Rohm Semiconductor

MOSFET N-CH 600V 1.7A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,040

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RRH050P03GZETB	Rohm Semiconductor	MOSFET P-CH 30V 5A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 650mW (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock30,000	MOSFET (Metal Oxide)	30V	5A (Ta)	4V, 10V	2.5V @ 1mA	17nC @ 10V	850pF @ 10V	±20V	-	650mW (Ta)	50 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RS3E135BNGZETB	Rohm Semiconductor	NCH 30V 13.5A MIDDLE POWER MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 14.6 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,768	MOSFET (Metal Oxide)	30V	9.5A (Ta)	10V	2.5V @ 1mA	8.3nC @ 4.5V	680pF @ 15V	±20V	-	2W (Tc)	14.6 mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RF4E070BNTR	Rohm Semiconductor	MOSFET N-CH 30V 7A 8-HUML FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 28.6 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-HUML2020L8 (2x2) Package / Case: 8-PowerUDFN	Package: 8-PowerUDFN	Stock2,816	MOSFET (Metal Oxide)	30V	7A (Ta)	4.5V, 10V	2V @ 250µA	8.9nC @ 10V	410pF @ 15V	±20V	-	2W (Ta)	28.6 mOhm @ 7A, 10V	150°C (TJ)	Surface Mount	6-HUML2020L8 (2x2)	8-PowerUDFN
RMW150N03TB	Rohm Semiconductor	MOSFET N-CH 30V 15A 8PSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 831pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOP Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock4,080	MOSFET (Metal Oxide)	30V	15A (Ta)	4.5V, 10V	2.5V @ 1mA	15nC @ 10V	831pF @ 15V	±20V	-	3W (Ta)	9.1 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	8-PSOP	8-SMD, Flat Lead
RS1G150MNTB	Rohm Semiconductor	MOSFET N-CH 40V 15A 8HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,512	MOSFET (Metal Oxide)	40V	15A (Ta)	4.5V, 10V	2.5V @ 1mA	15nC @ 10V	930pF @ 20V	±20V	-	3W (Ta), 25W (Tc)	10.6 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
RZQ050P01TR	Rohm Semiconductor	MOSFET P-CH 12V 5A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 6V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 26 mOhm @ 5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock715,032	MOSFET (Metal Oxide)	12V	5A (Ta)	1.5V, 4.5V	1V @ 1mA	35nC @ 4.5V	2850pF @ 6V	±10V	-	600mW (Ta)	26 mOhm @ 5A, 4.5V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RCD051N20TL	Rohm Semiconductor	MOSFET N-CH 200V 5A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 850mW (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 760 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock18,624	MOSFET (Metal Oxide)	200V	5A (Tc)	10V	5.25V @ 1mA	8.3nC @ 10V	330pF @ 25V	±30V	-	850mW (Ta), 20W (Tc)	760 mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RS1E200GNTB	Rohm Semiconductor	MOSFET N-CH 30V 20A 8-HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 25.1W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,176	MOSFET (Metal Oxide)	30V	20A (Ta)	4.5V, 10V	2.5V @ 1mA	16.8nC @ 10V	1080pF @ 15V	±20V	-	3W (Ta), 25.1W (Tc)	4.6 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
RQ3L050GNTB	Rohm Semiconductor	NCH 60V 12A MIDDLE POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 14.8W (Tc) Rds On (Max) @ Id, Vgs: 61 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,808	MOSFET (Metal Oxide)	60V	12A (Tc)	10V	2.5V @ 25µA	2.8nC @ 4.5V	300pF @ 30V	±20V	-	14.8W (Tc)	61 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
RTQ035N03TR	Rohm Semiconductor	MOSFET N-CH 30V 3.5A TSMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V Vgs (Max): 12V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 54 mOhm @ 3.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock3,995,916	MOSFET (Metal Oxide)	30V	3.5A (Ta)	2.5V, 4.5V	1.5V @ 1mA	6.4nC @ 4.5V	285pF @ 10V	12V	-	1.25W (Ta)	54 mOhm @ 3.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RSR020P05TL	Rohm Semiconductor	MOSFET P-CH 45V 2A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 190 mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock5,056	MOSFET (Metal Oxide)	45V	2A (Ta)	4V, 10V	3V @ 1mA	4.5nC @ 4.5V	500pF @ 10V	±20V	-	540mW (Ta)	190 mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RSR025P03TL	Rohm Semiconductor	MOSFET P-CH 30V 2.5A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 98 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock566,124	MOSFET (Metal Oxide)	30V	2.5A (Ta)	4V, 10V	-	5.4nC @ 5V	460pF @ 10V	±20V	-	1W (Ta)	98 mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RQ6E085BNTCR	Rohm Semiconductor	NCH 30V 8.5A MIDDLE POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Tc) Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-457 Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock2,048	MOSFET (Metal Oxide)	30V	8.5A (Tc)	10V	2.5V @ 1mA	32.7nC @ 10V	1350pF @ 15V	±20V	-	1.25W (Tc)	14.4 mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-457	SC-74, SOT-457
RSQ035N03TR	Rohm Semiconductor	MOSFET N-CH 30V 3.5A TSMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 62 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock440,604	MOSFET (Metal Oxide)	30V	3.5A (Ta)	4V, 10V	2.5V @ 1mA	7.4nC @ 5V	290pF @ 10V	20V	-	1.25W (Ta)	62 mOhm @ 3.5A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RQ5C060BCTCL	Rohm Semiconductor	PCH -20V -6A MIDDLE POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 21.1 mOhm @ 6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock7,728	MOSFET (Metal Oxide)	20V	6A (Ta)	4.5V	1.2V @ 1mA	19.2nC @ 4.5V	1360pF @ 10V	±8V	-	1W (Tc)	21.1 mOhm @ 6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TSMT3	SC-96
RND030N20TL	Rohm Semiconductor	MOSFET N-CH 200V 3A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 850mW (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 870 mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,888	MOSFET (Metal Oxide)	200V	3A (Tc)	10V	5.2V @ 1mA	6.7nC @ 10V	270pF @ 25V	±30V	-	850mW (Ta), 20W (Tc)	870 mOhm @ 1.5A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RDD023N50TL	Rohm Semiconductor	MOSFET N-CH 500V 2A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 5.4 Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,880	MOSFET (Metal Oxide)	500V	2A (Tc)	4V, 10V	2V @ 1mA	11nC @ 10V	151pF @ 25V	±20V	-	20W (Tc)	5.4 Ohm @ 1A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RSR025N03TL	Rohm Semiconductor	MOSFET N-CH 30V 2.5A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock710,820	MOSFET (Metal Oxide)	30V	2.5A (Ta)	4V, 10V	2.5V @ 1mA	4.1nC @ 5V	165pF @ 10V	20V	-	1W (Ta)	70 mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RF4E075ATTCR	Rohm Semiconductor	MOSFET P-CH 30V 7.5A 8DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 21.7 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-HUML2020L8 (2x2) Package / Case: 8-PowerUDFN	Package: 8-PowerUDFN	Stock2,320	MOSFET (Metal Oxide)	30V	7.5A (Ta)	4.5V, 10V	2.5V @ 1mA	22nC @ 10V	1000pF @ 15V	±20V	-	2W (Ta)	21.7 mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	6-HUML2020L8 (2x2)	8-PowerUDFN
R6002ENDTL	Rohm Semiconductor	MOSFET N-CH 600V 1.7A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,040	MOSFET (Metal Oxide)	600V	1.7A (Tc)	10V	4V @ 1mA	6.5nC @ 10V	65pF @ 25V	±20V	-	20W (Tc)	3.4 Ohm @ 500mA, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
QS5U27TR	Rohm Semiconductor	MOSFET P-CH 20V 1.5A TSMT5 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT5 Package / Case: SOT-23-5 Thin, TSOT-23-5	Package: SOT-23-5 Thin, TSOT-23-5	Stock129,528	MOSFET (Metal Oxide)	20V	1.5A (Ta)	2.5V, 4.5V	2V @ 1mA	4.2nC @ 4.5V	325pF @ 10V	±12V	Schottky Diode (Isolated)	1.25W (Ta)	200 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT5	SOT-23-5 Thin, TSOT-23-5
RS1E280BNTB	Rohm Semiconductor	MOSFET N-CH 30V 28A 8HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 28A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,536	MOSFET (Metal Oxide)	30V	28A (Ta)	4.5V, 10V	2.5V @ 1mA	94nC @ 10V	5100pF @ 15V	±20V	-	3W (Ta), 30W (Tc)	2.3 mOhm @ 28A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
RS1E170GNTB	Rohm Semiconductor	MOSFET N-CH 30V 17A 8-HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 23.7W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 17A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,424	MOSFET (Metal Oxide)	30V	17A (Ta)	4.5V, 10V	2.5V @ 1mA	12nC @ 10V	720pF @ 15V	±20V	-	3W (Ta), 23.7W (Tc)	6.7 mOhm @ 17A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
RTF015P02TL	Rohm Semiconductor	MOSFET P-CH 20V 1.5A TUMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock405,360	MOSFET (Metal Oxide)	20V	1.5A (Ta)	2.5V, 4.5V	2V @ 1mA	5.2nC @ 4.5V	560pF @ 10V	±12V	-	800mW (Ta)	135 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	TUMT3	3-SMD, Flat Leads
RQ6P015SPTR	Rohm Semiconductor	MOSFET P-CH 100V 1.5A TSMT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 322nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 470 mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock7,920	MOSFET (Metal Oxide)	100V	1.5A (Ta)	4V, 10V	2.5V @ 1mA	322nC @ 10V	950pF @ 25V	±20V	-	600mW (Ta)	470 mOhm @ 1.5A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RUF025N02TL	Rohm Semiconductor	MOSFET N-CH 20V 2.5A TUMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 54 mOhm @ 2.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock534,876	MOSFET (Metal Oxide)	20V	2.5A (Ta)	1.5V, 4.5V	1.3V @ 1mA	5nC @ 4.5V	370pF @ 10V	±10V	-	320mW (Ta)	54 mOhm @ 2.5A, 4.5V	150°C (TJ)	Surface Mount	TUMT3	3-SMD, Flat Leads
ES6U3T2CR	Rohm Semiconductor	MOSFET N-CH 30V 1.4A WEMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WEMT Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock2,016	MOSFET (Metal Oxide)	30V	1.4A (Ta)	4V, 10V	2.5V @ 1mA	1.4nC @ 5V	70pF @ 10V	±20V	Schottky Diode (Isolated)	700mW (Ta)	240 mOhm @ 1.4A, 10V	150°C (TJ)	Surface Mount	6-WEMT	SOT-563, SOT-666
RQ3E180GNTB	Rohm Semiconductor	MOSFET N-CH 30V 18A 8-HSMT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 18A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,424	MOSFET (Metal Oxide)	30V	18A (Ta)	4.5V, 10V	2.5V @ 1mA	22.4nC @ 10V	1520pF @ 15V	±20V	-	2W (Ta)	4.3 mOhm @ 18A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN