Page 24 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STP15N60M2-EP
STMicroelectronics

MOSFET N-CH 600V 11A EP TO220AB

Package: TO-220-3

Stock12,456
STFI9N80K5
STMicroelectronics

MOSFET N-CH 800V 7A I2PAKFP

Package: TO-262-3 Full Pack, I2Pak

Stock16,956
STFI15N60M2-EP
STMicroelectronics

MOSFET N-CH 600V 11A I2PAKFP

Package: TO-262-3 Full Pack, I2Pak

Stock13,728
STFI13N65M2
STMicroelectronics

MOSFET N-CH 650V 10A I2PAKFP

Package: TO-262-3 Full Pack, I2Pak

Stock13,218
STL33N65M2
STMicroelectronics

N-CHANNEL 650 V, 0.124 OHM TYP.,

Package: 8-PowerVDFN

Stock26,748
STH290N4F6-2AG
STMicroelectronics

MOSFET N-CH 40V 180A H2PAK-2

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock14,682
STFI7LN80K5
STMicroelectronics

MOSFET N-CH 800V 5A I2PAKFP

Package: TO-262-3 Full Pack, I2Pak

Stock14,298
STH290N4F6-6AG
STMicroelectronics

MOSFET N-CH 40V 180A H2PAK-6

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock20,016
STU16N60M2
STMicroelectronics

MOSFET N-CH 600V 12A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock26,502
STU7LN80K5
STMicroelectronics

MOSFET N-CH 800V 5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock53,706
STFI12N60M2
STMicroelectronics

MOSFET N-CH 600V 9A I2PAK-FP

Package: TO-262-3 Full Pack, I2Pak

Stock15,366
STP110N8F6
STMicroelectronics

MOSFET N-CH 80V 110A TO-220

Package: TO-220-3

Stock4,720
STP10N60M2
STMicroelectronics

MOSFET N-CH 600V TO-220

Package: TO-220-3

Stock24,000
STU12N60M2
STMicroelectronics

MOSFET N-CH 600V 9A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock15,612
STF10N60DM2
STMicroelectronics

N-CHANNEL 600 V, 0.26 OHM TYP.,

Package: TO-220-3 Full Pack

Stock19,398
STU6N62K3
STMicroelectronics

MOSFET N-CH 620V 5.5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock24,012
STF5N80K5
STMicroelectronics

N-CHANNEL 800 V, 1.50 OHM TYP.,

Package: TO-220-3 Full Pack

Stock17,556
STP5N80K5
STMicroelectronics

N-CHANNEL 800 V, 1.50 OHM TYP.,

Package: TO-220-3

Stock18,036
STD5NK40Z-1
STMicroelectronics

MOSFET N-CH 400V 3A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock601,020
STF4LN80K5
STMicroelectronics

MOSFET N-CH 800V 3A TO220FP

Package: TO-220-3 Full Pack

Stock23,346

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STP15N60M2-EP	STMicroelectronics	MOSFET N-CH 600V 11A EP TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 378 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock12,456	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 250µA	17nC @ 10V	590pF @ 100V	±25V	-	110W (Tc)	378 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STFI9N80K5	STMicroelectronics	MOSFET N-CH 800V 7A I2PAKFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock16,956	MOSFET (Metal Oxide)	800V	7A (Tc)	10V	5V @ 100µA	12nC @ 10V	340pF @ 100V	±30V	-	25W (Tc)	900 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	-	TO-262-3 Full Pack, I2Pak
STFI15N60M2-EP	STMicroelectronics	MOSFET N-CH 600V 11A I2PAKFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 378 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock13,728	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 250µA	17nC @ 10V	590pF @ 100V	±25V	-	25W (Tc)	378 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
STFI13N65M2	STMicroelectronics	MOSFET N-CH 650V 10A I2PAKFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 430 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock13,218	MOSFET (Metal Oxide)	650V	10A (Tc)	10V	4V @ 250µA	17nC @ 10V	590pF @ 100V	±25V	-	25W (Tc)	430 mOhm @ 5A, 10V	150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
STL33N65M2	STMicroelectronics	N-CHANNEL 650 V, 0.124 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 154 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock26,748	MOSFET (Metal Oxide)	650V	20A (Tc)	10V	4V @ 250µA	41.5nC @ 10V	1790pF @ 100V	±25V	-	150W (Tc)	154 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	8-PowerVDFN
STH290N4F6-2AG	STMicroelectronics	MOSFET N-CH 40V 180A H2PAK-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7380pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock14,682	MOSFET (Metal Oxide)	40V	180A (Tc)	10V	4V @ 250µA	115nC @ 10V	7380pF @ 25V	±20V	-	300W (Tc)	1.7 Ohm @ 45A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2Pak-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STFI7LN80K5	STMicroelectronics	MOSFET N-CH 800V 5A I2PAKFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock14,298	MOSFET (Metal Oxide)	800V	5A (Tc)	10V	5V @ 100µA	12nC @ 10V	270pF @ 100V	±30V	-	25W (Tc)	1.15 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
STH290N4F6-6AG	STMicroelectronics	MOSFET N-CH 40V 180A H2PAK-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7380pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock20,016	MOSFET (Metal Oxide)	40V	180A (Tc)	10V	4V @ 250µA	115nC @ 10V	7380pF @ 25V	±20V	-	300W (Tc)	1.7 Ohm @ 45A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK-6	TO-263-7, D2Pak (6 Leads + Tab)
STU16N60M2	STMicroelectronics	MOSFET N-CH 600V 12A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock26,502	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	4V @ 250µA	19nC @ 10V	700pF @ 100V	±25V	-	110W (Tc)	320 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
STU7LN80K5	STMicroelectronics	MOSFET N-CH 800V 5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock53,706	MOSFET (Metal Oxide)	800V	5A (Tc)	10V	5V @ 100µA	12nC @ 10V	270pF @ 100V	±30V	-	85W (Tc)	1.15 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
STFI12N60M2	STMicroelectronics	MOSFET N-CH 600V 9A I2PAK-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 538pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock15,366	MOSFET (Metal Oxide)	600V	9A (Tc)	10V	4V @ 250µA	16nC @ 10V	538pF @ 100V	±25V	-	25W (Tc)	450 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
STP110N8F6	STMicroelectronics	MOSFET N-CH 80V 110A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock4,720	MOSFET (Metal Oxide)	80V	110A (Tc)	10V	4.5V @ 250µA	150nC @ 10V	9130pF @ 40V	±20V	-	200W (Tc)	6.5 mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STP10N60M2	STMicroelectronics	MOSFET N-CH 600V TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock24,000	MOSFET (Metal Oxide)	600V	7.5A (Tc)	10V	4V @ 250µA	13.5nC @ 10V	400pF @ 100V	±25V	-	85W (Tc)	600 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STU12N60M2	STMicroelectronics	MOSFET N-CH 600V 9A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 538pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock15,612	MOSFET (Metal Oxide)	600V	9A (Tc)	10V	4V @ 250µA	16nC @ 10V	538pF @ 100V	±25V	-	85W (Tc)	450 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STF10N60DM2	STMicroelectronics	N-CHANNEL 600 V, 0.26 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 530 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock19,398	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	5V @ 250µA	15nC @ 10V	529pF @ 100V	±25V	-	25W (Tc)	530 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STU6N62K3	STMicroelectronics	MOSFET N-CH 620V 5.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock24,012	MOSFET (Metal Oxide)	620V	5.5A (Tc)	10V	4.5V @ 50µA	30nC @ 10V	875pF @ 50V	±30V	-	90W (Tc)	1.2 Ohm @ 2.8A, 10V	150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STF5N80K5	STMicroelectronics	N-CHANNEL 800 V, 1.50 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock17,556	MOSFET (Metal Oxide)	800V	4A (Ta)	10V	5V @ 100µA	5nC @ 10V	177pF @ 100V	±30V	-	20W (Tc)	1.75 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP5N80K5	STMicroelectronics	N-CHANNEL 800 V, 1.50 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock18,036	MOSFET (Metal Oxide)	800V	4A (Tc)	10V	5V @ 100µA	5nC @ 10V	177pF @ 100V	±30V	-	60W (Tc)	1.75 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STD5NK40Z-1	STMicroelectronics	MOSFET N-CH 400V 3A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock601,020	MOSFET (Metal Oxide)	400V	3A (Tc)	10V	4.5V @ 50µA	17nC @ 10V	305pF @ 25V	±30V	-	45W (Tc)	1.8 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STF4LN80K5	STMicroelectronics	MOSFET N-CH 800V 3A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 122pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock23,346	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	5V @ 100µA	3.7nC @ 10V	122pF @ 100V	±30V	-	20W (Tc)	2.6 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF9HN65M2	STMicroelectronics	MOSFET N-CH 650V 5.5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 820 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock19,692	MOSFET (Metal Oxide)	650V	5.5A (Tc)	10V	4V @ 250µA	11.5nC @ 10V	325pF @ 100V	±25V	-	20W (Tc)	820 mOhm @ 2.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STU9HN65M2	STMicroelectronics	MOSFET N-CH 650V 5.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 820 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock24,588	MOSFET (Metal Oxide)	650V	5.5A (Tc)	10V	4V @ 250µA	11.5nC @ 10V	325pF @ 100V	±25V	-	60W (Tc)	820 mOhm @ 2.5A, 10V	150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STD1NK80Z-1	STMicroelectronics	MOSFET N-CH 800V 1A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 16 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock185,856	MOSFET (Metal Oxide)	800V	1A (Tc)	10V	4.5V @ 50µA	7.7nC @ 10V	160pF @ 25V	±30V	-	45W (Tc)	16 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STP14NF10	STMicroelectronics	MOSFET N-CH 100V 15A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock648,000	MOSFET (Metal Oxide)	100V	15A (Tc)	10V	4V @ 250µA	21nC @ 10V	460pF @ 25V	±20V	-	60W (Tc)	130 mOhm @ 7A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STD7LN80K5	STMicroelectronics	MOSFET N-CH 800V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock25,446	MOSFET (Metal Oxide)	800V	5A (Tc)	10V	5V @ 100µA	12nC @ 10V	270pF @ 100V	±30V	-	85W (Tc)	1.15 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STB25NF06LAG	STMicroelectronics	MOSFET N-CH 60V 25A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 25A Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock22,848	MOSFET (Metal Oxide)	60V	25A	5V, 10V	-	14nC @ 10V	-	-	-	-	-	-	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STY112N65M5	STMicroelectronics	MOSFET N-CH 650V 93A MAX247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16870pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 47A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: MAX247? Package / Case: TO-247-3	Package: TO-247-3	Stock10,824	MOSFET (Metal Oxide)	650V	96A (Tc)	10V	5V @ 250µA	350nC @ 10V	16870pF @ 100V	±25V	-	625W (Tc)	22 mOhm @ 47A, 10V	150°C (TJ)	Through Hole	MAX247?	TO-247-3
STW78N65M5	STMicroelectronics	MOSFET N-CH 650V 69A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 203nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 34.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock11,172	MOSFET (Metal Oxide)	650V	69A (Tc)	10V	5V @ 250µA	203nC @ 10V	9000pF @ 100V	±25V	-	450W (Tc)	32 mOhm @ 34.5A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3