Page 26 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STD3NK60ZT4
STMicroelectronics

MOSFET N-CH 600V 2.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock679,296
STS5P3LLH6
STMicroelectronics

MOSFET P-CH 30V 5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock26,952
STS11N3LLH5
STMicroelectronics

MOSFET N-CH 30V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock422,460
STQ1HN60K3-AP
STMicroelectronics

MOSFET N-CH 600V 0.4A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock17,946
STL4P3LLH6
STMicroelectronics

MOSFET P-CH 30V 4A POWERFLAT

Package: 6-PowerWDFN

Stock28,764
STE40NC60
STMicroelectronics

MOSFET N-CH 600V 40A ISOTOP

Package: ISOTOP

Stock6,660
STW88N65M5-4
STMicroelectronics

MOSFET N-CH 650V 84A

Package: TO-247-4

Stock15,492
STWA40N95K5
STMicroelectronics

N-CHANNEL 950 V, 0.110 OHM TYP.,

Package: TO-247-3

Stock6,564
STWA12N120K5
STMicroelectronics

MOSFET N-CH 1200V 12A TO-247-3

Package: TO-247-3

Stock9,720
STW45NM60
STMicroelectronics

MOSFET N-CH 650V 45A TO-247

Package: TO-247-3

Stock48,276
STW58N65DM2AG
STMicroelectronics

MOSFET N-CH 650V 48A

Package: TO-247-3

Stock17,640
STW56N65DM2
STMicroelectronics

MOSFET N-CH 650V 48A

Package: TO-247-3

Stock23,376
STF12N120K5
STMicroelectronics

MOSFET N-CH 1200V 12A TO-220FP

Package: TO-220-3 Full Pack

Stock18,876
STW56N60DM2
STMicroelectronics

MOSFET N-CH 600V 50A

Package: TO-247-3

Stock5,872
STWA48N60M2
STMicroelectronics

MOSFET N-CH 600V 42A TO-247

Package: TO-247-3

Stock17,328
STFW42N60M2-EP
STMicroelectronics

MOSFET N-CH 600V 34A

Package: TO-3P-3 Full Pack

Stock8,316
STW48N60DM2
STMicroelectronics

MOSFET N-CH 600V 40A

Package: TO-247-3

Stock15,336
STW50N65DM2AG
STMicroelectronics

MOSFET N-CH 650V 28A

Package: TO-247-3

Stock15,732
STF20N90K5
STMicroelectronics

N-CHANNEL 900 V, 0.24 OHM TYP.,

Package: TO-220-3 Full Pack

Stock7,356
STF20N95K5
STMicroelectronics

MOSFET N-CH 950V 17.5A TO-220FP

Package: TO-220-3 Full Pack

Stock5,824

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STD3NK60ZT4	STMicroelectronics	MOSFET N-CH 600V 2.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 311pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock679,296	MOSFET (Metal Oxide)	600V	2.4A (Tc)	10V	4.5V @ 50µA	11.8nC @ 10V	311pF @ 25V	±30V	-	45W (Tc)	3.6 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STS5P3LLH6	STMicroelectronics	MOSFET P-CH 30V 5A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta) Rds On (Max) @ Id, Vgs: 56 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock26,952	MOSFET (Metal Oxide)	30V	5A (Ta)	4.5V, 10V	2.5V @ 250µA	6nC @ 4.5V	639pF @ 25V	±20V	-	2.7W (Ta)	56 mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STS11N3LLH5	STMicroelectronics	MOSFET N-CH 30V 11A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 724pF @ 25V Vgs (Max): +22V, -20V FET Feature: - Power Dissipation (Max): 2.7W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock422,460	MOSFET (Metal Oxide)	30V	11A (Tc)	4.5V, 10V	1V @ 250µA	5nC @ 4.5V	724pF @ 25V	+22V, -20V	-	2.7W (Tc)	14 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STQ1HN60K3-AP	STMicroelectronics	MOSFET N-CH 600V 0.4A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 8 Ohm @ 600mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock17,946	MOSFET (Metal Oxide)	600V	400mA (Tc)	10V	4.5V @ 50µA	9.5nC @ 10V	140pF @ 50V	±30V	-	3W (Tc)	8 Ohm @ 600mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
STL4P3LLH6	STMicroelectronics	MOSFET P-CH 30V 4A POWERFLAT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 56 mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (2x2) Package / Case: 6-PowerWDFN	Package: 6-PowerWDFN	Stock28,764	MOSFET (Metal Oxide)	30V	4A (Ta)	4.5V, 10V	2.5V @ 250µA	6nC @ 4.5V	639pF @ 25V	±20V	-	2.4W (Ta)	56 mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (2x2)	6-PowerWDFN
STE40NC60	STMicroelectronics	MOSFET N-CH 600V 40A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 40A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: ISOTOP	Package: ISOTOP	Stock6,660	MOSFET (Metal Oxide)	600V	40A	10V	4V @ 250µA	430nC @ 10V	11100pF @ 25V	±30V	-	460W (Tc)	130 mOhm @ 20A, 10V	150°C (TJ)	Chassis Mount	ISOTOP?	ISOTOP
STW88N65M5-4	STMicroelectronics	MOSFET N-CH 650V 84A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 204nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8825pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 29 mOhm @ 42A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: TO-247-4	Stock15,492	MOSFET (Metal Oxide)	650V	84A (Tc)	10V	5V @ 250µA	204nC @ 10V	8825pF @ 100V	±25V	-	450W (Tc)	29 mOhm @ 42A, 10V	150°C (TJ)	Through Hole	TO-247-4L	TO-247-4
STWA40N95K5	STMicroelectronics	N-CHANNEL 950 V, 0.110 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 38A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,564	MOSFET (Metal Oxide)	950V	38A	10V	5V @ 100µA	93nC @ 10V	3300pF @ 100V	±30V	-	450W (Tc)	130 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STWA12N120K5	STMicroelectronics	MOSFET N-CH 1200V 12A TO-247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 44.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 690 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: TO-247-3	Stock9,720	MOSFET (Metal Oxide)	1200V	12A (Tc)	10V	5V @ 100µA	44.2nC @ 10V	1370pF @ 100V	±30V	-	250W (Tc)	690 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3
STW45NM60	STMicroelectronics	MOSFET N-CH 650V 45A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 22.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock48,276	MOSFET (Metal Oxide)	650V	45A (Tc)	10V	5V @ 250µA	134nC @ 10V	3800pF @ 25V	±30V	-	417W (Tc)	110 mOhm @ 22.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW58N65DM2AG	STMicroelectronics	MOSFET N-CH 650V 48A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock17,640	MOSFET (Metal Oxide)	650V	48A (Tc)	10V	5V @ 250µA	88nC @ 10V	4100pF @ 100V	±25V	-	360W (Tc)	65 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STW56N65DM2	STMicroelectronics	MOSFET N-CH 650V 48A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock23,376	MOSFET (Metal Oxide)	650V	48A (Tc)	10V	5V @ 250µA	88nC @ 10V	4100pF @ 100V	±25V	-	360W (Tc)	65 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STF12N120K5	STMicroelectronics	MOSFET N-CH 1200V 12A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 44.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 690 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock18,876	MOSFET (Metal Oxide)	1200V	12A (Tc)	10V	5V @ 100µA	44.2nC @ 10V	1370pF @ 100V	±30V	-	40W (Tc)	690 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STW56N60DM2	STMicroelectronics	MOSFET N-CH 600V 50A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock5,872	MOSFET (Metal Oxide)	600V	50A (Tc)	10V	5V @ 250µA	90nC @ 10V	4100pF @ 100V	±25V	-	360W (Tc)	60 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STWA48N60M2	STMicroelectronics	MOSFET N-CH 600V 42A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3060pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: TO-247-3	Stock17,328	MOSFET (Metal Oxide)	600V	42A (Tc)	10V	4V @ 250µA	70nC @ 10V	3060pF @ 100V	±25V	-	300W (Tc)	70 mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3
STFW42N60M2-EP	STMicroelectronics	MOSFET N-CH 600V 34A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 87 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock8,316	MOSFET (Metal Oxide)	600V	34A (Tc)	10V	4V @ 250µA	55nC @ 10V	2370pF @ 100V	±25V	-	63W (Tc)	87 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
STW48N60DM2	STMicroelectronics	MOSFET N-CH 600V 40A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 79 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock15,336	MOSFET (Metal Oxide)	600V	40A (Tc)	10V	5V @ 250µA	70nC @ 10V	3250pF @ 100V	±25V	-	300W (Tc)	79 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STW50N65DM2AG	STMicroelectronics	MOSFET N-CH 650V 28A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 87 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock15,732	MOSFET (Metal Oxide)	650V	28A (Tc)	10V	5V @ 250µA	70nC @ 10V	3200pF @ 100V	±25V	-	300W (Tc)	87 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STF20N90K5	STMicroelectronics	N-CHANNEL 900 V, 0.24 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 20A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,356	MOSFET (Metal Oxide)	900V	20A	10V	5V @ 100µA	40nC @ 10V	1500pF @ 100V	±30V	Current Sensing	40W (Tc)	250 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF20N95K5	STMicroelectronics	MOSFET N-CH 950V 17.5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 330 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,824	MOSFET (Metal Oxide)	950V	17.5A (Tc)	10V	5V @ 100µA	40nC @ 10V	1500pF @ 100V	±30V	-	40W (Tc)	330 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STW20N90K5	STMicroelectronics	N-CHANNEL 900 V, 0.24 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 20A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock15,180	MOSFET (Metal Oxide)	900V	20A	10V	5V @ 100µA	40nC @ 10V	1500pF @ 100V	±30V	Current Sensing	250W (Tc)	250 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STP20N90K5	STMicroelectronics	N-CHANNEL 900 V, 0.24 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 20A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,108	MOSFET (Metal Oxide)	900V	20A	10V	5V @ 100µA	40nC @ 10V	1500pF @ 100V	±30V	Current Sensing	250W (Tc)	250 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STW31N65M5	STMicroelectronics	MOSFET N-CH 650V 22A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 148 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock11,556	MOSFET (Metal Oxide)	650V	22A (Tc)	10V	5V @ 250µA	45nC @ 10V	816pF @ 100V	±25V	-	150W (Tc)	148 mOhm @ 11A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
STW43N60DM2	STMicroelectronics	MOSFET N-CH 600V 34A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 93 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock8,052	MOSFET (Metal Oxide)	600V	34A (Tc)	10V	5V @ 250µA	56nC @ 10V	2500pF @ 100V	±25V	-	250W (Tc)	93 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STW45N60DM2AG	STMicroelectronics	MOSFET N-CH 600V 34A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 93 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock10,812	MOSFET (Metal Oxide)	600V	34A (Tc)	10V	5V @ 250µA	56nC @ 10V	2500pF @ 100V	±25V	-	250W (Tc)	93 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STW27N60M2-EP	STMicroelectronics	MOSFET N-CH 600V 20A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 163 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock15,084	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	4V @ 250µA	33nC @ 10V	1320pF @ 100V	±25V	-	170W (Tc)	163 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW35N60DM2	STMicroelectronics	MOSFET N-CH 600V 28A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,160	MOSFET (Metal Oxide)	600V	28A (Tc)	10V	5V @ 250µA	54nC @ 10V	2400pF @ 100V	±25V	-	210W (Tc)	110 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STW37N60DM2AG	STMicroelectronics	MOSFET N-CH 600V 28A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock19,776	MOSFET (Metal Oxide)	600V	28A (Tc)	10V	5V @ 250µA	54nC @ 10V	2400pF @ 100V	±25V	-	210W (Tc)	110 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3