Page 45 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STP110N8F7
STMicroelectronics

MOSFET N-CH 80V 80A TO-220

Package: TO-220-3

Stock13,608
STF13N60DM2
STMicroelectronics

N-CHANNEL 600 V, 0.310 OHM TYP.,

Package: TO-220-3 Full Pack

Stock19,980
STP5NK60Z
STMicroelectronics

MOSFET N-CH 600V 5A TO-220

Package: TO-220-3

Stock20,904
STF7LN80K5
STMicroelectronics

MOSFET N-CH 800V 5A TO-220FP

Package: TO-220-3 Full Pack

Stock21,360
STF4N90K5
STMicroelectronics

N-CHANNEL 900 V, 0.25 OHM TYP.,

Package: TO-220-3

Stock6,828
STP130N6F7
STMicroelectronics

MOSFET N-CH 60V 80A F7 TO220AB

Package: TO-220-3

Stock22,128
STP12N60M2
STMicroelectronics

MOSFET N-CH 600V 9A TO-220AB

Package: TO-220-3

Stock18,972
STF12N60M2
STMicroelectronics

MOSFET N-CH 600V 9A TO-220FP

Package: TO-220-3 Full Pack

Stock19,824
STP7LN80K5
STMicroelectronics

MOSFET N-CH 800V 5A TO-220

Package: TO-220-3

Stock19,680
STP11N60DM2
STMicroelectronics

N-CHANNEL 600 V, 0.26 OHM TYP.,

Package: TO-220-3

Stock19,020
STF11N60DM2
STMicroelectronics

N-CHANNEL 600 V, 0.26 OHM TYP.,

Package: TO-220-3 Full Pack

Stock15,336
STP4N90K5
STMicroelectronics

N-CHANNEL 900 V, 0.25 OHM TYP.,

Package: TO-220-3

Stock5,648
STFH10N60M2
STMicroelectronics

MOSFET NCH 600V 7.5A TO220

Package: TO-220-3 Full Pack

Stock11,736
STFU6N65
STMicroelectronics

N-CHANNEL 650 V, 1.2 OHM TYP., 4

Package: TO-220-3 Full Pack

Stock23,244
STE88N65M5
STMicroelectronics

MOSFET N-CH 650V 88A ISOTOP

Package: ISOTOP

Stock5,264
STW62NM60N
STMicroelectronics

MOSFET N-CH 600V 65A TO-247

Package: TO-247-3

Stock3,904
STW36N55M5
STMicroelectronics

MOSFET N CH 550V 33A TO-247

Package: TO-247-3

Stock5,504
STP85NF55
STMicroelectronics

MOSFET N-CH 55V 80A TO-220

Package: TO-220-3

Stock512,160
STF7N80K5
STMicroelectronics

MOSFET N CH 800V 6A TO220FP

Package: TO-220-3 Full Pack

Stock5,008
STP8NK80ZFP
STMicroelectronics

MOSFET N-CH 800V 6.2A TO-220FP

Package: TO-220-3 Full Pack

Stock330,552

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STP110N8F7	STMicroelectronics	MOSFET N-CH 80V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3435pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock13,608	MOSFET (Metal Oxide)	80V	80A (Tc)	10V	4.5V @ 250µA	46.8nC @ 10V	3435pF @ 40V	±20V	-	170W (Tc)	7.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STF13N60DM2	STMicroelectronics	N-CHANNEL 600 V, 0.310 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 365 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock19,980	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	19nC @ 10V	730pF @ 100V	±25V	-	25W (Tc)	365 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP5NK60Z	STMicroelectronics	MOSFET N-CH 600V 5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock20,904	MOSFET (Metal Oxide)	600V	5A (Tc)	10V	4.5V @ 50µA	34nC @ 10V	690pF @ 25V	±30V	-	90W (Tc)	1.6 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STF7LN80K5	STMicroelectronics	MOSFET N-CH 800V 5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock21,360	MOSFET (Metal Oxide)	800V	5A (Tc)	10V	5V @ 100µA	12nC @ 10V	270pF @ 100V	±30V	-	25W (Tc)	1.15 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF4N90K5	STMicroelectronics	N-CHANNEL 900 V, 0.25 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 4A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 173pF @ 100V Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): 20W (Ta) Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3	Package: TO-220-3	Stock6,828	MOSFET (Metal Oxide)	900V	4A	10V	5V @ 100µA	5.3nC @ 10V	173pF @ 100V	±30V	Current Sensing	20W (Ta)	2.1 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3
STP130N6F7	STMicroelectronics	MOSFET N-CH 60V 80A F7 TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock22,128	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4V @ 250µA	42nC @ 10V	2600pF @ 25V	±20V	-	160W (Tc)	5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP12N60M2	STMicroelectronics	MOSFET N-CH 600V 9A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 538pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock18,972	MOSFET (Metal Oxide)	600V	9A (Tc)	10V	4V @ 250µA	16nC @ 10V	538pF @ 100V	±25V	-	85W (Tc)	450 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STF12N60M2	STMicroelectronics	MOSFET N-CH 600V 9A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 538pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock19,824	MOSFET (Metal Oxide)	600V	9A (Tc)	10V	4V @ 250µA	16nC @ 10V	538pF @ 100V	±25V	-	25W (Tc)	450 mOhm @ 4.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP7LN80K5	STMicroelectronics	MOSFET N-CH 800V 5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock19,680	MOSFET (Metal Oxide)	800V	5A (Tc)	10V	5V @ 100µA	12nC @ 10V	270pF @ 100V	±30V	-	85W (Tc)	1.15 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STP11N60DM2	STMicroelectronics	N-CHANNEL 600 V, 0.26 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 614pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock19,020	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	5V @ 250µA	16.5nC @ 10V	614pF @ 100V	±25V	-	110W (Tc)	420 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STF11N60DM2	STMicroelectronics	N-CHANNEL 600 V, 0.26 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 614pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock15,336	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	5V @ 250µA	16.5nC @ 10V	614pF @ 100V	±25V	-	25W (Tc)	420 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP4N90K5	STMicroelectronics	N-CHANNEL 900 V, 0.25 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 173pF @ 100V Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): 60W (Ta) Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,648	MOSFET (Metal Oxide)	900V	3A	10V	5V @ 100µA	5.3nC @ 10V	173pF @ 100V	±30V	Current Sensing	60W (Ta)	2.1 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STFH10N60M2	STMicroelectronics	MOSFET NCH 600V 7.5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock11,736	MOSFET (Metal Oxide)	600V	7.5A (Tc)	10V	4V @ 250µA	13.5nC @ 10V	400pF @ 100V	±25V	-	25W (Tc)	600 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STFU6N65	STMicroelectronics	N-CHANNEL 650 V, 1.2 OHM TYP., 4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 463pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 620mW (Ta), 77W (Tc) Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock23,244	MOSFET (Metal Oxide)	650V	4A (Tc)	10V	4V @ 250µA	-	463pF @ 25V	±30V	-	620mW (Ta), 77W (Tc)	2.7 Ohm @ 2A, 10V	-55°C ~ 150°C (TA)	Through Hole	TO-220FP	TO-220-3 Full Pack
STE88N65M5	STMicroelectronics	MOSFET N-CH 650V 88A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 88A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 204nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8825pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 494W (Tc) Rds On (Max) @ Id, Vgs: 29 mOhm @ 42A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP Package / Case: ISOTOP	Package: ISOTOP	Stock5,264	MOSFET (Metal Oxide)	650V	88A	10V	5V @ 250µA	204nC @ 10V	8825pF @ 100V	±25V	-	494W (Tc)	29 mOhm @ 42A, 10V	150°C (TJ)	Chassis Mount	ISOTOP	ISOTOP
STW62NM60N	STMicroelectronics	MOSFET N-CH 600V 65A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 174nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 49 mOhm @ 32.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock3,904	MOSFET (Metal Oxide)	600V	65A (Tc)	10V	4V @ 250µA	174nC @ 10V	5800pF @ 100V	±25V	-	450W (Tc)	49 mOhm @ 32.5A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
STW36N55M5	STMicroelectronics	MOSFET N CH 550V 33A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 16.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock5,504	MOSFET (Metal Oxide)	550V	33A (Tc)	10V	5V @ 250µA	62nC @ 10V	2950pF @ 100V	±25V	-	190W (Tc)	80 mOhm @ 16.5A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
STP85NF55	STMicroelectronics	MOSFET N-CH 55V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock512,160	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	150nC @ 10V	3700pF @ 25V	±20V	-	300W (Tc)	8 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STF7N80K5	STMicroelectronics	MOSFET N CH 800V 6A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,008	MOSFET (Metal Oxide)	800V	6A (Tc)	10V	5V @ 100µA	13.4nC @ 10V	360pF @ 100V	±30V	-	25W (Tc)	1.2 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP8NK80ZFP	STMicroelectronics	MOSFET N-CH 800V 6.2A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock330,552	MOSFET (Metal Oxide)	800V	6.2A (Tc)	10V	4.5V @ 100µA	46nC @ 10V	1320pF @ 25V	±30V	-	30W (Tc)	1.5 Ohm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF5N95K3	STMicroelectronics	MOSFET N-CH 950V 4A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock407,016	MOSFET (Metal Oxide)	950V	4A (Tc)	10V	5V @ 100µA	19nC @ 10V	460pF @ 25V	±30V	-	25W (Tc)	3.5 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP7NK80Z	STMicroelectronics	MOSFET N-CH 800V 5.2A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1138pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock29,748	MOSFET (Metal Oxide)	800V	5.2A (Tc)	10V	4.5V @ 100µA	56nC @ 10V	1138pF @ 25V	±30V	-	125W (Tc)	1.8 Ohm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STF80N10F7	STMicroelectronics	MOSFET N-CH 100V 40A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock15,240	MOSFET (Metal Oxide)	100V	40A (Tc)	10V	4.5V @ 250µA	45nC @ 10V	3100pF @ 50V	±20V	-	30W (Tc)	10 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF11N65M5	STMicroelectronics	MOSFET N CH 650V 9A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 644pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock13,104	MOSFET (Metal Oxide)	650V	9A (Tc)	10V	5V @ 250µA	17nC @ 10V	644pF @ 100V	±25V	-	25W (Tc)	480 mOhm @ 4.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF25N10F7	STMicroelectronics	MOSFET N-CH 100V 25A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,144	MOSFET (Metal Oxide)	100V	19A (Tc)	10V	4.5V @ 250µA	14nC @ 10V	920pF @ 50V	±20V	-	25W (Tc)	35 mOhm @ 12.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STI18N65M2	STMicroelectronics	MOSFET N-CH 650V 12A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 330 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock16,584	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	4V @ 250µA	20nC @ 10V	770pF @ 100V	±25V	-	110W (Tc)	330 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STP18N65M2	STMicroelectronics	MOSFET N-CH 650V 12A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 330 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,696	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	4V @ 250µA	20nC @ 10V	770pF @ 100V	±25V	-	110W (Tc)	330 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
STP8NM50N	STMicroelectronics	MOSFET N-CH 500V 5A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 790 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock17,880	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4V @ 250µA	14nC @ 10V	364pF @ 50V	±25V	-	45W (Tc)	790 mOhm @ 2.5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3