Page 48 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STF7N52K3
STMicroelectronics

MOSFET N-CH 525V 6A TO-220FP

Package: TO-220-3 Full Pack

Stock17,124
STP7N65M2
STMicroelectronics

MOSFET N-CH 650V 5A TO-220AB

Package: TO-220-3

Stock18,816
STP11N65M2
STMicroelectronics

MOSFET N-CH 650V 7A TO-220AB

Package: TO-220-3

Stock6,744
STB4NK60Z-1
STMicroelectronics

MOSFET N-CH 600V 4A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock447,000
STP9N60M2
STMicroelectronics

MOSFET N-CH 600V 5.5A TO-220

Package: TO-220-3

Stock6,160
STP105N3LL
STMicroelectronics

MOSFET N-CH 30V 80A TO220

Package: TO-220-3

Stock48,972
STP4N80K5
STMicroelectronics

MOSFET N-CH 800V 3A TO-220AB

Package: TO-220-3

Stock8,796
STF9N65M2
STMicroelectronics

MOSFET N-CH 650V 5A TO-220FP

Package: TO-220-3 Full Pack

Stock16,152
STU9N65M2
STMicroelectronics

MOSFET N-CH 650V 5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock18,096
STU5N60M2
STMicroelectronics

MOSFET N-CH 600V 3.7A TO220

Package: TO-220-3

Stock17,868
STP5NK65ZFP
STMicroelectronics

MOSFET N-CH 650V 4.5A TO-220FP

Package: TO-220-3 Full Pack

Stock362,616
STP80N70F6
STMicroelectronics

MOSFET N CH 68V 96A TO-220

Package: TO-220-3

Stock438,000
STP1N105K3
STMicroelectronics

MOSFET N-CH 1050V 1.4A TO-220

Package: TO-220-3

Stock18,756
STU3N80K5
STMicroelectronics

MOSFET N-CH 800V 2.5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock20,784
STP80N6F6
STMicroelectronics

MOSFET N-CH 60V TO-220

Package: TO-220-3

Stock828,000
STU95N2LH5
STMicroelectronics

MOSFET N-CH 25V 80A TO220-3

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock79,860
STP3N62K3
STMicroelectronics

MOSFET N-CH 620V 2.7A TO-220

Package: TO-220-3

Stock4,656
STP5N60M2
STMicroelectronics

MOSFET N-CH 600V 3.7A TO220

Package: TO-220-3

Stock15,852
STF9N60M2
STMicroelectronics

MOSFET N-CH 600V 5.5A TO-220FP

Package: TO-220-3 Full Pack

Stock5,920
STP6N62K3
STMicroelectronics

MOSFET N-CH 620V 5.5A TO-220

Package: TO-220-3

Stock4,912

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STF7N52K3	STMicroelectronics	MOSFET N-CH 525V 6A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock17,124	MOSFET (Metal Oxide)	525V	6A (Tc)	10V	4.5V @ 50µA	33nC @ 10V	870pF @ 100V	±30V	-	25W (Tc)	850 mOhm @ 3A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP7N65M2	STMicroelectronics	MOSFET N-CH 650V 5A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock18,816	MOSFET (Metal Oxide)	650V	5A (Tc)	10V	4V @ 250µA	9nC @ 10V	270pF @ 100V	±25V	-	60W (Tc)	1.15 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STP11N65M2	STMicroelectronics	MOSFET N-CH 650V 7A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 670 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,744	MOSFET (Metal Oxide)	650V	7A (Tc)	10V	4V @ 250µA	12.5nC @ 10V	410pF @ 100V	±25V	-	85W (Tc)	670 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STB4NK60Z-1	STMicroelectronics	MOSFET N-CH 600V 4A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock447,000	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	4.5V @ 50µA	26nC @ 10V	510pF @ 25V	±30V	-	70W (Tc)	2 Ohm @ 2A, 10V	150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STP9N60M2	STMicroelectronics	MOSFET N-CH 600V 5.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 780 mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,160	MOSFET (Metal Oxide)	600V	5.5A (Tc)	10V	4V @ 250µA	10nC @ 10V	320pF @ 100V	±25V	-	60W (Tc)	780 mOhm @ 3A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
STP105N3LL	STMicroelectronics	MOSFET N-CH 30V 80A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock48,972	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2.5V @ 250µA	42nC @ 4.5V	3100pF @ 25V	±20V	-	140W (Tc)	3.5 mOhm @ 40A, 10V	175°C (TJ)	Through Hole	TO-220	TO-220-3
STP4N80K5	STMicroelectronics	MOSFET N-CH 800V 3A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock8,796	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	5V @ 100µA	10.5nC @ 10V	175pF @ 100V	±30V	-	60W (Tc)	2.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STF9N65M2	STMicroelectronics	MOSFET N-CH 650V 5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock16,152	MOSFET (Metal Oxide)	650V	5A (Tc)	10V	4V @ 250µA	10nC @ 10V	315pF @ 100V	±25V	-	20W (Tc)	900 mOhm @ 2.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STU9N65M2	STMicroelectronics	MOSFET N-CH 650V 5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock18,096	MOSFET (Metal Oxide)	650V	5A (Tc)	10V	4V @ 250µA	10nC @ 10V	315pF @ 100V	±25V	-	60W (Tc)	900 mOhm @ 2.5A, 10V	150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
STU5N60M2	STMicroelectronics	MOSFET N-CH 600V 3.7A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.85A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock17,868	MOSFET (Metal Oxide)	600V	3.7A (Tc)	10V	4V @ 250µA	4.5nC @ 10V	165pF @ 100V	±25V	-	45W (Tc)	1.4 Ohm @ 1.85A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
STP5NK65ZFP	STMicroelectronics	MOSFET N-CH 650V 4.5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock362,616	MOSFET (Metal Oxide)	650V	4.5A (Tc)	10V	4.5V @ 50µA	35nC @ 10V	680pF @ 25V	±30V	-	25W (Tc)	1.8 Ohm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP80N70F6	STMicroelectronics	MOSFET N CH 68V 96A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 68V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 48A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock438,000	MOSFET (Metal Oxide)	68V	96A (Tc)	10V	4V @ 250µA	99nC @ 10V	5850pF @ 25V	±20V	-	110W (Tc)	8 mOhm @ 48A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STP1N105K3	STMicroelectronics	MOSFET N-CH 1050V 1.4A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1050V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 11 Ohm @ 600mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock18,756	MOSFET (Metal Oxide)	1050V	1.4A (Tc)	10V	4.5V @ 50µA	13nC @ 10V	180pF @ 100V	±30V	-	60W (Tc)	11 Ohm @ 600mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STU3N80K5	STMicroelectronics	MOSFET N-CH 800V 2.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 100V Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock20,784	MOSFET (Metal Oxide)	800V	2.5A (Tc)	10V	5V @ 100µA	9.5nC @ 10V	130pF @ 100V	30V	-	60W (Tc)	3.5 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STP80N6F6	STMicroelectronics	MOSFET N-CH 60V TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7480pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock828,000	MOSFET (Metal Oxide)	60V	110A (Tc)	10V	4.5V @ 250µA	122nC @ 10V	7480pF @ 25V	±20V	-	120W (Tc)	5.8 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STU95N2LH5	STMicroelectronics	MOSFET N-CH 25V 80A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1817pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock79,860	MOSFET (Metal Oxide)	25V	80A (Tc)	5V, 10V	1V @ 250µA	13.4nC @ 5V	1817pF @ 25V	±25V	-	70W (Tc)	4.9 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STP3N62K3	STMicroelectronics	MOSFET N-CH 620V 2.7A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 385pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,656	MOSFET (Metal Oxide)	620V	2.7A (Tc)	10V	4.5V @ 50µA	13nC @ 10V	385pF @ 25V	±30V	-	45W (Tc)	2.5 Ohm @ 1.4A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP5N60M2	STMicroelectronics	MOSFET N-CH 600V 3.7A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.85A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock15,852	MOSFET (Metal Oxide)	600V	3.7A (Tc)	10V	4V @ 250µA	4.5nC @ 10V	165pF @ 100V	±25V	-	45W (Tc)	1.4 Ohm @ 1.85A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
STF9N60M2	STMicroelectronics	MOSFET N-CH 600V 5.5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 780 mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,920	MOSFET (Metal Oxide)	600V	5.5A (Tc)	10V	4V @ 250µA	10nC @ 10V	320pF @ 100V	±25V	-	20W (Tc)	780 mOhm @ 3A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP6N62K3	STMicroelectronics	MOSFET N-CH 620V 5.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,912	MOSFET (Metal Oxide)	620V	5.5A (Tc)	10V	4.5V @ 50µA	34nC @ 10V	875pF @ 50V	±30V	-	90W (Tc)	1.2 Ohm @ 2.8A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP90N6F6	STMicroelectronics	MOSFET N-CH 60V 84A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4295pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 38.5A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock438,000	MOSFET (Metal Oxide)	60V	84A (Tc)	10V	4V @ 250µA	74.9nC @ 10V	4295pF @ 25V	±20V	-	136W (Tc)	6.8 mOhm @ 38.5A, 10V	175°C (TJ)	Through Hole	TO-220	TO-220-3
STU7N65M2	STMicroelectronics	MOSFET N-CH 650V 5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock20,232	MOSFET (Metal Oxide)	650V	5A (Tc)	10V	4V @ 250µA	9nC @ 10V	270pF @ 100V	±25V	-	60W (Tc)	1.15 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
STF6N65M2	STMicroelectronics	MOSFET N-CH 650V 4A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 226pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,640	MOSFET (Metal Oxide)	650V	4A (Tc)	10V	4V @ 250µA	9.8nC @ 10V	226pF @ 100V	±25V	-	20W (Tc)	1.35 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP2N95K5	STMicroelectronics	MOSFET N-CH 950V 2A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 100V Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,528	MOSFET (Metal Oxide)	950V	2A (Tc)	10V	5V @ 100µA	10nC @ 10V	105pF @ 100V	30V	-	45W (Tc)	5 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STD10PF06-1	STMicroelectronics	MOSFET P-CH 60V 10A IPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 5A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock60,888	MOSFET (Metal Oxide)	60V	10A (Tc)	10V	4V @ 250µA	21nC @ 10V	850pF @ 25V	±20V	-	40W (Tc)	200 mOhm @ 5A, 10V	175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STP11NK40Z	STMicroelectronics	MOSFET N-CH 400V 9A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock52,080	MOSFET (Metal Oxide)	400V	9A (Tc)	10V	4.5V @ 100µA	32nC @ 10V	930pF @ 25V	±30V	-	110W (Tc)	550 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STU6N65M2	STMicroelectronics	MOSFET N-CH 650V 4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 226pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock15,072	MOSFET (Metal Oxide)	650V	4A (Tc)	10V	4V @ 250µA	9.8nC @ 10V	226pF @ 100V	±25V	-	60W (Tc)	1.35 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
STB5NK52ZD-1	STMicroelectronics	MOSFET N-CH 520V 4.4A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 520V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 16.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock18,372	MOSFET (Metal Oxide)	520V	4.4A (Tc)	10V	4.5V @ 50µA	16.9nC @ 10V	529pF @ 25V	±30V	-	70W (Tc)	1.5 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA