Page 81 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STP13NM50N
STMicroelectronics

MOSFET N-CH 500V 12A TO-220

Package: TO-220-3

Stock19,344
STP13NK50Z
STMicroelectronics

MOSFET N-CH 500V 11A TO-220

Package: TO-220-3

Stock3,872
STP12NM60N
STMicroelectronics

MOSFET N-CH 600V 10A TO-220

Package: TO-220-3

Stock218,016
STP120NH03L
STMicroelectronics

MOSFET N-CH 30V 60A TO-220

Package: TO-220-3

Stock1,973,412
STP10NM65N
STMicroelectronics

MOSFET N-CH 650V 9A TO-220

Package: TO-220-3

Stock23,976
STI23NM60N
STMicroelectronics

MOSFET N-CH 600V 19A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,392
STI17NF25
STMicroelectronics

MOSFET N-CH 250V 17A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,944
STI16NM50N
STMicroelectronics

MOSFET N-CH 500V 15A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,840
STI15NM60N
STMicroelectronics

MOSFET N-CH 600V 14A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,440
STF9NM50N
STMicroelectronics

MOSFET N-CH 500V 7.5A TO-220FP

Package: TO-220-3 Full Pack

Stock14,232
STF8NM60N
STMicroelectronics

MOSFET N-CH 600V 7A TO-220FP

Package: TO-220-3 Full Pack

Stock57,672
STF23NM60N
STMicroelectronics

MOSFET N-CH 600V 19A TO-220FP

Package: TO-220-3 Full Pack

Stock33,924
STF16NM50N
STMicroelectronics

MOSFET N-CH 500V 15A TO-220FP

Package: TO-220-3 Full Pack

Stock29,436
STF15NM60N
STMicroelectronics

MOSFET N-CH 600V 14A TO-220FP

Package: TO-220-3 Full Pack

Stock89,424
STF13NM50N
STMicroelectronics

MOSFET N-CH 500V 12A TO-220FP

Package: TO-220-3 Full Pack

Stock11,244
STF12NM60N
STMicroelectronics

MOSFET N-CH 600V 10A TO-220FP

Package: TO-220-3 Full Pack

Stock14,064
STF10NM65N
STMicroelectronics

MOSFET N-CH 650V 9A TO-220FP

Package: TO-220-3 Full Pack

Stock32,232
STD9NM50N-1
STMicroelectronics

MOSFET N-CH 500V 7.5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,128
STD90N03L-1
STMicroelectronics

MOSFET N-CH 30V 80A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock84,252
STD8NM60N-1
STMicroelectronics

MOSFET N-CH 600V 7A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,224

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STP13NM50N	STMicroelectronics	MOSFET N-CH 500V 12A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock19,344	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 250µA	30nC @ 10V	960pF @ 50V	±25V	-	100W (Tc)	320 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP13NK50Z	STMicroelectronics	MOSFET N-CH 500V 11A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,872	MOSFET (Metal Oxide)	500V	11A (Tc)	10V	4.5V @ 100µA	47nC @ 10V	1600pF @ 25V	±30V	-	140W (Tc)	480 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP12NM60N	STMicroelectronics	MOSFET N-CH 600V 10A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 410 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock218,016	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4V @ 250µA	30.5nC @ 10V	960pF @ 50V	±25V	-	90W (Tc)	410 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP120NH03L	STMicroelectronics	MOSFET N-CH 30V 60A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock1,973,412	MOSFET (Metal Oxide)	30V	60A (Tc)	5V, 10V	3V @ 250µA	77nC @ 10V	4100pF @ 25V	±20V	-	110W (Tc)	5.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP10NM65N	STMicroelectronics	MOSFET N-CH 650V 9A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock23,976	MOSFET (Metal Oxide)	650V	9A (Tc)	10V	4V @ 250µA	25nC @ 10V	850pF @ 50V	±25V	-	90W (Tc)	480 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STI23NM60N	STMicroelectronics	MOSFET N-CH 600V 19A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,392	MOSFET (Metal Oxide)	600V	19A (Tc)	10V	4V @ 250µA	60nC @ 10V	2050pF @ 50V	±25V	-	150W (Tc)	180 mOhm @ 9.5A, 10V	150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STI17NF25	STMicroelectronics	MOSFET N-CH 250V 17A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,944	MOSFET (Metal Oxide)	250V	17A (Tc)	10V	4V @ 250µA	29.5nC @ 10V	1000pF @ 25V	±20V	-	90W (Tc)	165 mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STI16NM50N	STMicroelectronics	MOSFET N-CH 500V 15A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,840	MOSFET (Metal Oxide)	500V	15A (Tc)	10V	4V @ 250µA	38nC @ 10V	1200pF @ 50V	±25V	-	125W (Tc)	260 mOhm @ 7.5A, 10V	150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STI15NM60N	STMicroelectronics	MOSFET N-CH 600V 14A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,440	MOSFET (Metal Oxide)	600V	14A (Tc)	10V	4V @ 250µA	37nC @ 10V	1250pF @ 50V	±25V	-	125W (Tc)	299 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STF9NM50N	STMicroelectronics	MOSFET N-CH 500V 7.5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock14,232	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4V @ 250µA	20nC @ 10V	570pF @ 50V	±25V	-	25W (Tc)	560 mOhm @ 3.7A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF8NM60N	STMicroelectronics	MOSFET N-CH 600V 7A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock57,672	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	4V @ 250µA	19nC @ 10V	560pF @ 50V	±25V	-	25W (Tc)	650 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF23NM60N	STMicroelectronics	MOSFET N-CH 600V 19A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock33,924	MOSFET (Metal Oxide)	600V	19A (Tc)	10V	4V @ 250µA	60nC @ 10V	2050pF @ 50V	±25V	-	35W (Tc)	180 mOhm @ 9.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF16NM50N	STMicroelectronics	MOSFET N-CH 500V 15A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock29,436	MOSFET (Metal Oxide)	500V	15A (Tc)	10V	4V @ 250µA	38nC @ 10V	1200pF @ 50V	±25V	-	30W (Tc)	260 mOhm @ 7.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF15NM60N	STMicroelectronics	MOSFET N-CH 600V 14A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock89,424	MOSFET (Metal Oxide)	600V	14A (Tc)	10V	4V @ 250µA	37nC @ 10V	1250pF @ 50V	±25V	-	30W (Tc)	299 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF13NM50N	STMicroelectronics	MOSFET N-CH 500V 12A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock11,244	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 250µA	30nC @ 10V	960pF @ 50V	±25V	-	25W (Tc)	320 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF12NM60N	STMicroelectronics	MOSFET N-CH 600V 10A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 410 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock14,064	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4V @ 250µA	30.5nC @ 10V	960pF @ 50V	±25V	-	25W (Tc)	410 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF10NM65N	STMicroelectronics	MOSFET N-CH 650V 9A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock32,232	MOSFET (Metal Oxide)	650V	9A (Tc)	10V	4V @ 250µA	25nC @ 10V	850pF @ 50V	±25V	-	25W (Tc)	480 mOhm @ 4.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STD9NM50N-1	STMicroelectronics	MOSFET N-CH 500V 7.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,128	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4V @ 250µA	20nC @ 10V	570pF @ 50V	±25V	-	70W (Tc)	560 mOhm @ 3.7A, 10V	150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STD90N03L-1	STMicroelectronics	MOSFET N-CH 30V 80A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2805pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock84,252	MOSFET (Metal Oxide)	30V	80A (Tc)	5V, 10V	1V @ 250µA	32nC @ 5V	2805pF @ 25V	±20V	-	95W (Tc)	5.7 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STD8NM60N-1	STMicroelectronics	MOSFET N-CH 600V 7A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,224	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	4V @ 250µA	19nC @ 10V	560pF @ 50V	±25V	-	70W (Tc)	650 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STD7NM50N-1	STMicroelectronics	MOSFET N-CH 500V 5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 780 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock63,600	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4V @ 250µA	12nC @ 10V	400pF @ 50V	±25V	-	45W (Tc)	780 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STD50N03L-1	STMicroelectronics	MOSFET N-CH 30V 40A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1434pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock372,300	MOSFET (Metal Oxide)	30V	40A (Tc)	5V, 10V	1V @ 250µA	14nC @ 5V	1434pF @ 25V	±20V	-	60W (Tc)	10.5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STB13NM50N-1	STMicroelectronics	MOSFET N-CH 500V 12A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock256,800	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 250µA	30nC @ 10V	960pF @ 50V	±25V	-	100W (Tc)	320 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STB12NM60N-1	STMicroelectronics	MOSFET N-CH 600V 10A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 410 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,216	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4V @ 250µA	30.5nC @ 10V	960pF @ 50V	±25V	-	90W (Tc)	410 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STB11NM60N-1	STMicroelectronics	MOSFET N-CH 600V 10A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,816	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4V @ 250µA	31nC @ 10V	850pF @ 50V	±25V	-	90W (Tc)	450 mOhm @ 5A, 10V	150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STK822	STMicroelectronics	MOSFET N-CH 25V 38A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 38A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6060pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 5.2W (Ta) Rds On (Max) @ Id, Vgs: 2.15 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PolarPak? Package / Case: PolarPak?	Package: PolarPak?	Stock5,280	MOSFET (Metal Oxide)	25V	38A (Ta)	4.5V, 10V	2.5V @ 250µA	33nC @ 4.5V	6060pF @ 25V	±16V	-	5.2W (Ta)	2.15 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PolarPak?	PolarPak?
STFV3N150	STMicroelectronics	MOSFET N-CH 1500V 2.5A TO-220FH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 939pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 9 Ohm @ 1.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock6,160	MOSFET (Metal Oxide)	1500V	2.5A (Tc)	10V	5V @ 250µA	29.3nC @ 10V	939pF @ 25V	±30V	-	30W (Tc)	9 Ohm @ 1.3A, 10V	150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
STW80NF55-08	STMicroelectronics	MOSFET N-CH 55V 80A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock11,820	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	150nC @ 10V	3850pF @ 25V	±20V	-	300W (Tc)	8 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3