Page 83 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STB13NM50N
STMicroelectronics

MOSFET N-CH 500V 12A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,064
STL80N4LLF3
STMicroelectronics

MOSFET N-CH 40V 80A POWERFLAT6X5

Package: 8-PowerVDFN

Stock6,896
STD90N4F3
STMicroelectronics

MOSFET N-CH 40V 80A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock120,012
STB30NM60ND
STMicroelectronics

MOSFET N-CH 600V 25A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,728
STB30NM60N
STMicroelectronics

MOSFET N-CH 600V 25A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,752
STW90NF20
STMicroelectronics

MOSFET N-CH 200V 83A TO-247

Package: TO-247-3

Stock12,540
STW55NM50N
STMicroelectronics

MOSFET N-CH 500V 54A TO-247

Package: TO-247-3

Stock6,224
STW43NM50N
STMicroelectronics

MOSFET N-CH 500V 37A TO-247

Package: TO-247-3

Stock52,560
STW30NM60ND
STMicroelectronics

MOSFET N-CH 600V 25A TO-247

Package: TO-247-3

Stock5,104
STW23NM60ND
STMicroelectronics

MOSFET N-CH 600V 19.5A TO-247

Package: TO-247-3

Stock9,672
STP30NM60ND
STMicroelectronics

MOSFET N-CH 600V 25A TO-220

Package: TO-220-3

Stock6,160
STP30NM60N
STMicroelectronics

MOSFET N-CH 600V 25A TO-220

Package: TO-220-3

Stock7,568
STD90N02L
STMicroelectronics

MOSFET N-CH 25V 60A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock834,096
STD36NH02L
STMicroelectronics

MOSFET N-CH 24V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock711,048
STT3PF30L
STMicroelectronics

MOSFET P-CH 30V 2.4A SOT23-6

Package: SOT-23-6

Stock660,972
STS4NF100
STMicroelectronics

MOSFET N-CH 100V 4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock206,280
STB50NF25
STMicroelectronics

MOSFET N-CH 250V 45A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,080
STL6NM60N
STMicroelectronics

MOSFET N-CH 600V 5.75A POWERFLAT

Package: 8-PowerVDFN

Stock12,720
STB40NS15T4
STMicroelectronics

MOSFET N-CH 150V 40A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock18,060
STB300NH02L
STMicroelectronics

MOSFET N-CH 24V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,664

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STB13NM50N	STMicroelectronics	MOSFET N-CH 500V 12A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,064	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 250µA	30nC @ 10V	960pF @ 50V	±25V	-	100W (Tc)	320 mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STL80N4LLF3	STMicroelectronics	MOSFET N-CH 40V 80A POWERFLAT6X5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (6x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,896	MOSFET (Metal Oxide)	40V	80A (Tc)	4.5V, 10V	1V @ 250µA	28nC @ 4.5V	2530pF @ 25V	±16V	-	80W (Tc)	5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (6x5)	8-PowerVDFN
STD90N4F3	STMicroelectronics	MOSFET N-CH 40V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock120,012	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	54nC @ 10V	2200pF @ 25V	±20V	-	110W (Tc)	6.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STB30NM60ND	STMicroelectronics	MOSFET N-CH 600V 25A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,728	MOSFET (Metal Oxide)	600V	25A (Tc)	10V	5V @ 250µA	100nC @ 10V	2800pF @ 50V	±25V	-	190W (Tc)	130 mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB30NM60N	STMicroelectronics	MOSFET N-CH 600V 25A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,752	MOSFET (Metal Oxide)	600V	25A (Tc)	10V	4V @ 250µA	91nC @ 10V	2700pF @ 50V	±30V	-	190W (Tc)	130 mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STW90NF20	STMicroelectronics	MOSFET N-CH 200V 83A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5736pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 45A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock12,540	MOSFET (Metal Oxide)	200V	83A (Tc)	10V	4V @ 250µA	164nC @ 10V	5736pF @ 25V	±20V	-	300W (Tc)	23 mOhm @ 45A, 10V	-50°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW55NM50N	STMicroelectronics	MOSFET N-CH 500V 54A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 54 mOhm @ 27A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,224	MOSFET (Metal Oxide)	500V	54A (Tc)	10V	4V @ 250µA	180nC @ 10V	5800pF @ 50V	±25V	-	350W (Tc)	54 mOhm @ 27A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW43NM50N	STMicroelectronics	MOSFET N-CH 500V 37A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 18.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock52,560	MOSFET (Metal Oxide)	500V	37A (Tc)	10V	4V @ 250µA	140nC @ 10V	4200pF @ 50V	±25V	-	255W (Tc)	85 mOhm @ 18.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW30NM60ND	STMicroelectronics	MOSFET N-CH 600V 25A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,104	MOSFET (Metal Oxide)	600V	25A (Tc)	10V	5V @ 250µA	100nC @ 10V	2800pF @ 50V	±25V	-	190W (Tc)	130 mOhm @ 12.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW23NM60ND	STMicroelectronics	MOSFET N-CH 600V 19.5A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock9,672	MOSFET (Metal Oxide)	600V	19.5A (Tc)	10V	5V @ 250µA	70nC @ 10V	2050pF @ 50V	±25V	-	150W (Tc)	180 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STP30NM60ND	STMicroelectronics	MOSFET N-CH 600V 25A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,160	MOSFET (Metal Oxide)	600V	25A (Tc)	10V	5V @ 250µA	100nC @ 10V	2800pF @ 50V	±25V	-	190W (Tc)	130 mOhm @ 12.5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP30NM60N	STMicroelectronics	MOSFET N-CH 600V 25A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,568	MOSFET (Metal Oxide)	600V	25A (Tc)	10V	4V @ 250µA	91nC @ 10V	2700pF @ 50V	±30V	-	190W (Tc)	130 mOhm @ 12.5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STD90N02L	STMicroelectronics	MOSFET N-CH 25V 60A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock834,096	MOSFET (Metal Oxide)	25V	60A (Tc)	5V, 10V	1.8V @ 250µA	22nC @ 5V	2050pF @ 16V	±20V	-	70W (Tc)	6 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STD36NH02L	STMicroelectronics	MOSFET N-CH 24V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock711,048	MOSFET (Metal Oxide)	24V	30A (Tc)	5V, 10V	2.5V @ 250µA	20nC @ 10V	860pF @ 15V	±20V	-	45W (Tc)	14.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STT3PF30L	STMicroelectronics	MOSFET P-CH 30V 2.4A SOT23-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	Package: SOT-23-6	Stock660,972	MOSFET (Metal Oxide)	30V	2.4A (Tc)	4.5V, 10V	2.5V @ 250µA	7nC @ 4.5V	420pF @ 25V	±16V	-	1.6W (Tc)	165 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
STS4NF100	STMicroelectronics	MOSFET N-CH 100V 4A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock206,280	MOSFET (Metal Oxide)	100V	4A (Tc)	10V	4V @ 250µA	41nC @ 10V	870pF @ 25V	±20V	-	2.5W (Ta)	70 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STB50NF25	STMicroelectronics	MOSFET N-CH 250V 45A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 69 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,080	MOSFET (Metal Oxide)	250V	45A (Tc)	10V	4V @ 250µA	68.2nC @ 10V	2670pF @ 25V	±20V	-	160W (Tc)	69 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STL6NM60N	STMicroelectronics	MOSFET N-CH 600V 5.75A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 920 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFLAT? (5x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock12,720	MOSFET (Metal Oxide)	600V	5.75A (Tc)	10V	4V @ 250µA	13nC @ 10V	420pF @ 50V	±25V	-	70W (Tc)	920 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFLAT? (5x5)	8-PowerVDFN
STB40NS15T4	STMicroelectronics	MOSFET N-CH 150V 40A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock18,060	MOSFET (Metal Oxide)	150V	40A (Tc)	10V	4V @ 250µA	110nC @ 10V	2420pF @ 25V	±20V	-	300W (Tc)	52 mOhm @ 20A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB300NH02L	STMicroelectronics	MOSFET N-CH 24V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 109.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7055pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,664	MOSFET (Metal Oxide)	24V	120A (Tc)	10V	2V @ 250µA	109.4nC @ 10V	7055pF @ 15V	±20V	-	300W (Tc)	1.8 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB85NS04Z	STMicroelectronics	MOSFET N-CH 33V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 33V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 215W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,488	MOSFET (Metal Oxide)	33V	80A (Tc)	10V	4V @ 1mA	100nC @ 10V	2500pF @ 25V	±18V	-	215W (Tc)	15 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB23NM60N	STMicroelectronics	MOSFET N-CH 600V 19A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,024	MOSFET (Metal Oxide)	600V	19A (Tc)	10V	4V @ 250µA	60nC @ 10V	2050pF @ 50V	±25V	-	150W (Tc)	180 mOhm @ 9.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB230NH03L	STMicroelectronics	MOSFET N-CH 30V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock8,268	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2.5V @ 250µA	72nC @ 10V	4700pF @ 10V	±20V	-	300W (Tc)	3 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STD85N3LH5	STMicroelectronics	MOSFET N-CH 30V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V Vgs (Max): ±22V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock712,884	MOSFET (Metal Oxide)	30V	80A (Tc)	5V, 10V	2.5V @ 250µA	14nC @ 5V	1850pF @ 25V	±22V	-	70W (Tc)	5 mOhm @ 40A, 10V	175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STD8NM60N	STMicroelectronics	MOSFET N-CH 600V 7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock487,716	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	4V @ 250µA	19nC @ 10V	560pF @ 50V	±25V	-	70W (Tc)	650 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STT2PF60L	STMicroelectronics	MOSFET P-CH 60V 2A SOT23-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 313pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	Package: SOT-23-6	Stock868,992	MOSFET (Metal Oxide)	60V	2A (Tc)	4.5V, 10V	1V @ 250µA	7nC @ 10V	313pF @ 25V	±15V	-	1.6W (Tc)	250 mOhm @ 1A, 10V	150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
STD60N3LH5	STMicroelectronics	MOSFET N-CH 30V 48A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,070,184	MOSFET (Metal Oxide)	30V	48A (Tc)	5V, 10V	3V @ 250µA	8.8nC @ 5V	1350pF @ 25V	±20V	-	60W (Tc)	8 mOhm @ 24A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STD7NM50N	STMicroelectronics	MOSFET N-CH 500V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 780 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock478,884	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4V @ 250µA	12nC @ 10V	400pF @ 50V	±25V	-	45W (Tc)	780 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63