Page 85 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STD95N3LLH6
STMicroelectronics

MOSFET N-CH 30V 80A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock593,424
STD8NM60ND
STMicroelectronics

MOSFET N-CH 600V 7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,936
STB8NM60N
STMicroelectronics

MOSFET N-CH 600V 7A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,048
STB6NM60N
STMicroelectronics

MOSFET N-CH 600V 4.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,392
STB30NM50N
STMicroelectronics

MOSFET N-CH 500V 27A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,584
STW70N10F4
STMicroelectronics

MOSFET N-CH 100V 65A TO-247

Package: TO-247-3

Stock738,000
STP8NM60ND
STMicroelectronics

MOSFET N-CH 600V 7A TO-220

Package: TO-220-3

Stock264,000
STP30NM50N
STMicroelectronics

MOSFET N-CH 500V 27A TO-220

Package: TO-220-3

Stock2,752
STP200N4F3
STMicroelectronics

MOSFET N-CH 40V 120A TO-220

Package: TO-220-3

Stock7,392
STT5PF20V
STMicroelectronics

MOSFET P-CH 20V 5A SOT23-6

Package: SOT-23-6

Stock1,028,916
STD6NM60N
STMicroelectronics

MOSFET N-CH 600V 4.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,252,200
STD7NK30Z
STMicroelectronics

MOSFET N-CH 300V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock59,844
STB200N4F3
STMicroelectronics

MOSFET N-CH 40V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock781,440
STI15NM60ND
STMicroelectronics

MOSFET N-CH 600V 14A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,416
STB141NF55-1
STMicroelectronics

MOSFET N-CH 55V 80A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,344
STI12NM50N
STMicroelectronics

MOSFET N-CH 500V 11A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock1,103,676
STI11NM60ND
STMicroelectronics

MOSFET N-CH 600V 10A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,424
STU95N4F3
STMicroelectronics

MOSFET N-CH 40V 80A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,208
STD2NK70Z-1
STMicroelectronics

MOSFET N-CH 700V 1.6A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock13,980
STP5N120
STMicroelectronics

MOSFET N-CH 1200V 4.4A TO-220

Package: TO-220-3

Stock5,040

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STD95N3LLH6	STMicroelectronics	MOSFET N-CH 30V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock593,424	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2.5V @ 250µA	20nC @ 4.5V	2200pF @ 25V	±20V	-	70W (Tc)	4.2 mOhm @ 40A, 10V	175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STD8NM60ND	STMicroelectronics	MOSFET N-CH 600V 7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,936	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	5V @ 250µA	22nC @ 10V	560pF @ 50V	±30V	-	70W (Tc)	700 mOhm @ 3.5A, 10V	150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STB8NM60N	STMicroelectronics	MOSFET N-CH 600V 7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,048	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	4V @ 250µA	19nC @ 10V	560pF @ 50V	±25V	-	70W (Tc)	650 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB6NM60N	STMicroelectronics	MOSFET N-CH 600V 4.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 920 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,392	MOSFET (Metal Oxide)	600V	4.6A (Tc)	10V	4V @ 250µA	13nC @ 10V	420pF @ 50V	±25V	-	45W (Tc)	920 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB30NM50N	STMicroelectronics	MOSFET N-CH 500V 27A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 115 mOhm @ 13.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,584	MOSFET (Metal Oxide)	500V	27A (Tc)	10V	4V @ 250µA	94nC @ 10V	2740pF @ 50V	±25V	-	190W (Tc)	115 mOhm @ 13.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STW70N10F4	STMicroelectronics	MOSFET N-CH 100V 65A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock738,000	MOSFET (Metal Oxide)	100V	65A (Tc)	10V	4V @ 250µA	85nC @ 10V	5800pF @ 25V	±20V	-	150W (Tc)	19.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
STP8NM60ND	STMicroelectronics	MOSFET N-CH 600V 7A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock264,000	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	5V @ 250µA	22nC @ 10V	560pF @ 50V	±30V	-	70W (Tc)	700 mOhm @ 3.5A, 10V	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
STP30NM50N	STMicroelectronics	MOSFET N-CH 500V 27A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 115 mOhm @ 13.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock2,752	MOSFET (Metal Oxide)	500V	27A (Tc)	10V	4V @ 250µA	94nC @ 10V	2740pF @ 50V	±25V	-	190W (Tc)	115 mOhm @ 13.5A, 10V	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
STP200N4F3	STMicroelectronics	MOSFET N-CH 40V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock7,392	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 250µA	75nC @ 10V	5100pF @ 25V	±20V	-	300W (Tc)	4.4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
STT5PF20V	STMicroelectronics	MOSFET P-CH 20V 5A SOT23-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	Package: SOT-23-6	Stock1,028,916	MOSFET (Metal Oxide)	20V	5A (Tc)	2.5V, 4.5V	450mV @ 250µA	4.5nC @ 2.5V	412pF @ 15V	±8V	-	1.6W (Tc)	80 mOhm @ 2.5A, 4.5V	150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
STD6NM60N	STMicroelectronics	MOSFET N-CH 600V 4.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 920 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,252,200	MOSFET (Metal Oxide)	600V	4.6A (Tc)	10V	4V @ 250µA	13nC @ 10V	420pF @ 50V	±25V	-	45W (Tc)	920 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STD7NK30Z	STMicroelectronics	MOSFET N-CH 300V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock59,844	MOSFET (Metal Oxide)	300V	5A (Tc)	10V	4.5V @ 50µA	13nC @ 10V	380pF @ 25V	±30V	-	50W (Tc)	900 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STB200N4F3	STMicroelectronics	MOSFET N-CH 40V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock781,440	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 250µA	75nC @ 10V	5100pF @ 25V	±20V	-	300W (Tc)	4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STI15NM60ND	STMicroelectronics	MOSFET N-CH 600V 14A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,416	MOSFET (Metal Oxide)	600V	14A (Tc)	10V	5V @ 250µA	40nC @ 10V	1250pF @ 50V	±25V	-	125W (Tc)	299 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STB141NF55-1	STMicroelectronics	MOSFET N-CH 55V 80A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,344	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	142nC @ 10V	5300pF @ 25V	±20V	-	300W (Tc)	8 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STI12NM50N	STMicroelectronics	MOSFET N-CH 500V 11A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock1,103,676	MOSFET (Metal Oxide)	500V	11A (Tc)	10V	4V @ 250µA	30nC @ 10V	940pF @ 50V	±25V	-	100W (Tc)	380 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STI11NM60ND	STMicroelectronics	MOSFET N-CH 600V 10A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,424	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	5V @ 250µA	30nC @ 10V	850pF @ 50V	±25V	-	90W (Tc)	450 mOhm @ 5A, 10V	150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STU95N4F3	STMicroelectronics	MOSFET N-CH 40V 80A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,208	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	54nC @ 10V	2200pF @ 25V	±20V	-	110W (Tc)	6.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STD2NK70Z-1	STMicroelectronics	MOSFET N-CH 700V 1.6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 11.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 7 Ohm @ 800mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock13,980	MOSFET (Metal Oxide)	700V	1.6A (Tc)	10V	4.5V @ 50µA	11.4nC @ 10V	280pF @ 25V	±30V	-	45W (Tc)	7 Ohm @ 800mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STP5N120	STMicroelectronics	MOSFET N-CH 1200V 4.4A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock5,040	MOSFET (Metal Oxide)	1200V	4.7A (Tc)	10V	5V @ 100µA	55nC @ 10V	120pF @ 25V	±30V	-	160W (Tc)	3.5 Ohm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
STB14NK50Z-1	STMicroelectronics	MOSFET N-CH 500V 14A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock36,000	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4.5V @ 100µA	92nC @ 10V	2000pF @ 25V	±30V	-	150W (Tc)	380 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STU70N2LH5	STMicroelectronics	MOSFET N-CH 25V 48A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±22V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,272	MOSFET (Metal Oxide)	25V	48A (Tc)	5V, 10V	1V @ 250µA	8nC @ 5V	1300pF @ 25V	±22V	-	60W (Tc)	7.5 mOhm @ 24A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STF19NM65N	STMicroelectronics	MOSFET N-CH 650V 15.5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 7.75A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,008	MOSFET (Metal Oxide)	650V	15.5A (Tc)	10V	4V @ 250µA	55nC @ 10V	1900pF @ 50V	±25V	-	35W (Tc)	270 mOhm @ 7.75A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STI19NM65N	STMicroelectronics	MOSFET N-CH 650V 15.5A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 7.75A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,488	MOSFET (Metal Oxide)	650V	15.5A (Tc)	10V	4V @ 250µA	55nC @ 10V	1900pF @ 50V	±25V	-	150W (Tc)	270 mOhm @ 7.75A, 10V	150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STU11NM60ND	STMicroelectronics	MOSFET N-CH 600V 10A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,592	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	5V @ 250µA	30nC @ 10V	850pF @ 50V	±25V	-	90W (Tc)	450 mOhm @ 5A, 10V	150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STB9NK70Z-1	STMicroelectronics	MOSFET N-CH 700V 7.5A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock22,020	MOSFET (Metal Oxide)	700V	7.5A (Tc)	10V	4.5V @ 100µA	68nC @ 10V	1370pF @ 25V	±30V	-	115W (Tc)	1.2 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STU90N4F3	STMicroelectronics	MOSFET N-CH 40V 80A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,296	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	54nC @ 10V	2200pF @ 25V	±20V	-	110W (Tc)	6.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STD30PF03L-1	STMicroelectronics	MOSFET P-CH 30V 24A IPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 12A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock100,824	MOSFET (Metal Oxide)	30V	24A (Tc)	5V, 10V	1V @ 250µA	28nC @ 5V	1670pF @ 25V	±16V	-	70W (Tc)	28 mOhm @ 12A, 10V	175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA