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Taiwan Semiconductor Corporation |
DIODE, ZENER, 62V, 1000MW, %, AE
- Voltage - Zener (Nom) (Vz): 62V
- Tolerance: ±6.45%
- Power - Max: 1W
- Impedance (Max) (Zzt): 80 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 47V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock2,624 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 4.7V, 150MW, 5%, 0
- Voltage - Zener (Nom) (Vz): 4.7V
- Tolerance: ±5%
- Power - Max: 150mW
- Impedance (Max) (Zzt): 78 Ohms
- Current - Reverse Leakage @ Vr: 5µA @ 2V
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 0201 (0603 Metric)
- Supplier Device Package: 0603
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Package: 0201 (0603 Metric) |
Stock3,200 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 4.3V, 200MW, 2%, S
- Voltage - Zener (Nom) (Vz): 4.3V
- Tolerance: ±2%
- Power - Max: 200mW
- Impedance (Max) (Zzt): 90 Ohms
- Current - Reverse Leakage @ Vr: 2.7µA @ 1V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523F
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Package: SC-79, SOD-523 |
Stock2,816 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 30V, 200MW, 5%, SO
- Voltage - Zener (Nom) (Vz): 30V
- Tolerance: ±5%
- Power - Max: 200mW
- Impedance (Max) (Zzt): 80 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 23V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523F
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Package: SC-79, SOD-523 |
Stock6,720 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 47V, 200MW, 2%, SO
- Voltage - Zener (Nom) (Vz): 47V
- Tolerance: ±2%
- Power - Max: 200mW
- Impedance (Max) (Zzt): 170 Ohms
- Current - Reverse Leakage @ Vr: 45nA @ 33V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323F
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Package: SC-90, SOD-323F |
Stock7,584 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 33V, 500MW, 2%, SO
- Voltage - Zener (Nom) (Vz): 33V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 80 Ohms
- Current - Reverse Leakage @ Vr: 45nA @ 23V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
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Package: SOD-123F |
Stock2,960 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 2.7V, 500MW, 2%, M
- Voltage - Zener (Nom) (Vz): 2.7V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 85 Ohms
- Current - Reverse Leakage @ Vr: 10µA @ 1V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: Mini MELF
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Package: DO-213AC, MINI-MELF, SOD-80 |
Stock4,672 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 2.4V, 500MW, 5%, M
- Voltage - Zener (Nom) (Vz): 2.4V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 85 Ohms
- Current - Reverse Leakage @ Vr: 50µA @ 1V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: Mini MELF
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Package: DO-213AC, MINI-MELF, SOD-80 |
Stock3,184 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 51V, 1000MW, %, SU
- Voltage - Zener (Nom) (Vz): 51V
- Tolerance: ±5%
- Power - Max: 1W
- Impedance (Max) (Zzt): 60 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 39V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock6,944 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 15V, 500MW, 5%, SO
- Voltage - Zener (Nom) (Vz): 15V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 30 Ohms
- Current - Reverse Leakage @ Vr: 45nA @ 10.5V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
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Package: SOD-123F |
Stock4,032 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 6A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1000V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
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Package: 4-SIP, GBU |
Stock3,616 |
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Taiwan Semiconductor Corporation |
DO-34, 500MW, 2%, SMALL SIGNAL Z
- Voltage - Zener (Nom) (Vz): 22.62 V
- Tolerance: ±2%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 35 Ohms
- Current - Reverse Leakage @ Vr: 200 nA @ 19 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AG, DO-34, Axial
- Supplier Device Package: DO-34
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE ARR SCHOT 120V 20A TO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io) (per Diode): 20A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 µA @ 120 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: - |
Stock3,000 |
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Taiwan Semiconductor Corporation |
1206 (CERAMICS), 500MW, 5%, SMAL
- Voltage - Zener (Nom) (Vz): 16 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 40 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 12 V
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 1206 (3216 Metric)
- Supplier Device Package: 1206
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A THIN SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: 13pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: Thin SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock18,435 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 2A SOD128
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 400 V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD-128
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock18,090 |
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Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 1KV 50A TS-6P
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 50 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
- Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, TS-6P
- Supplier Device Package: TS-6P
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Package: - |
Stock3,546 |
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Taiwan Semiconductor Corporation |
DIODE ARRAY GP 400V 10A ITO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
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Package: - |
Stock3,000 |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 5A TO220AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
600V, 11A, SINGLE N-CHANNEL POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: - |
Stock11,865 |
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Taiwan Semiconductor Corporation |
SOT-363, 30V, 0.2A, SCHOTTKY DIO
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 25 V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A MICRO SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 36 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 200 V
- Capacitance @ Vr, F: 18pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: Micro SMA
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock16,944 |
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Taiwan Semiconductor Corporation |
MELF, 1000MW, 5%, SMALL SIGNAL Z
- Voltage - Zener (Nom) (Vz): 4.3 V
- Tolerance: ±5%
- Power - Max: 1 W
- Impedance (Max) (Zzt): 9 Ohms
- Current - Reverse Leakage @ Vr: 10 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF
- Supplier Device Package: MELF
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE ARR SCHOT 150V 25A TO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io) (per Diode): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 150 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
SOD-123, 500MW, 5%, SMALL SIGNAL
- Voltage - Zener (Nom) (Vz): 11 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): -
- Current - Reverse Leakage @ Vr: 1 µA @ 8.4 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock30,000 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 4A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 150 V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
SOD-123F, 500MW, 5%, SMALL SIGNA
- Voltage - Zener (Nom) (Vz): 56 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 200 Ohms
- Current - Reverse Leakage @ Vr: 45 nA @ 39.2 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
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Package: - |
Request a Quote |
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