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Taiwan Semiconductor Corporation |
DIODE, ZENER, 160V, 2000MW, %, A
- Voltage - Zener (Nom) (Vz): 160V
- Tolerance: ±5%
- Power - Max: 2W
- Impedance (Max) (Zzt): 650 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 121.6V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
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Package: DO-204AC, DO-15, Axial |
Stock7,408 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 24V, 1000MW, 5%, A
- Voltage - Zener (Nom) (Vz): 24V
- Tolerance: ±5%
- Power - Max: 1W
- Impedance (Max) (Zzt): 25 Ohms
- Current - Reverse Leakage @ Vr: 5µA @ 18.2V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
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Package: DO-204AL, DO-41, Axial |
Stock6,656 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 82V, 1500MW, 5%, D
- Voltage - Zener (Nom) (Vz): 82V
- Tolerance: ±5%
- Power - Max: 1.5W
- Impedance (Max) (Zzt): 160 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 62.2V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
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Package: DO-214AC, SMA |
Stock5,840 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 5.6V, 150MW, 2%, S
- Voltage - Zener (Nom) (Vz): 5.6V
- Tolerance: ±2%
- Power - Max: 150mW
- Impedance (Max) (Zzt): 40 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 2V
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523F
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Package: SC-79, SOD-523 |
Stock2,544 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 24V, 1000MW, %, DO
- Voltage - Zener (Nom) (Vz): 24V
- Tolerance: ±5%
- Power - Max: 1.25W
- Impedance (Max) (Zzt): 25 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 18.2V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
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Package: DO-214AC, SMA |
Stock6,752 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 8.2V, 150MW, 2%, S
- Voltage - Zener (Nom) (Vz): 8.2V
- Tolerance: ±2%
- Power - Max: 150mW
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 700nA @ 5V
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523F
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Package: SC-79, SOD-523 |
Stock5,472 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 11V, 200MW, 5%, SO
- Voltage - Zener (Nom) (Vz): 11V
- Tolerance: ±5%
- Power - Max: 200mW
- Impedance (Max) (Zzt): 20 Ohms
- Current - Reverse Leakage @ Vr: 90nA @ 8V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323F
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Package: SC-90, SOD-323F |
Stock4,336 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 18V, 500MW, 5%, QM
- Voltage - Zener (Nom) (Vz): 18V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 50 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 13V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-80 Variant
- Supplier Device Package: Mini MELF
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Package: SOD-80 Variant |
Stock6,032 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 3.43V, 500MW, %, D
- Voltage - Zener (Nom) (Vz): 3.43V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 120 Ohms
- Current - Reverse Leakage @ Vr: 20µA @ 1V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AG, DO-34, Axial
- Supplier Device Package: DO-34
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Package: DO-204AG, DO-34, Axial |
Stock7,840 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 36.93V, 500MW, %,
- Voltage - Zener (Nom) (Vz): 36.93V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 85 Ohms
- Current - Reverse Leakage @ Vr: 200nA @ 30V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AG, DO-34, Axial
- Supplier Device Package: DO-34
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Package: DO-204AG, DO-34, Axial |
Stock3,456 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 8.2V, 500MW, 5%, Q
- Voltage - Zener (Nom) (Vz): 8.2V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 7 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 6.2V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-80 Variant
- Supplier Device Package: Mini MELF
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Package: SOD-80 Variant |
Stock5,568 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 6A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, TS-6P
- Supplier Device Package: TS-6P
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Package: 4-SIP, TS-6P |
Stock2,768 |
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Taiwan Semiconductor Corporation |
MMELF, 500MW, 2%, SMALL SIGNAL Z
- Voltage - Zener (Nom) (Vz): 9.1 V
- Tolerance: ±2%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 10 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: Mini MELF
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
SUB SMA, 1000MW, 6%, ZENER DIODE
- Voltage - Zener (Nom) (Vz): 82 V
- Tolerance: ±6.1%
- Power - Max: 1 W
- Impedance (Max) (Zzt): 200 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 62 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: Sub SMA
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 12A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: 78pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock9,000 |
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Taiwan Semiconductor Corporation |
MELF, 1000MW, 5%, SMALL SIGNAL Z
- Voltage - Zener (Nom) (Vz): 5.1 V
- Tolerance: ±5%
- Power - Max: 1 W
- Impedance (Max) (Zzt): 7 Ohms
- Current - Reverse Leakage @ Vr: 10 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF
- Supplier Device Package: MELF
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE ARR SCHOT 45V 25A ITO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io) (per Diode): 25A
- Voltage - Forward (Vf) (Max) @ If: 820 mV @ 25 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 45 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 6A SMPC4.6U
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 64pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: SMPC4.6U
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock15,597 |
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Taiwan Semiconductor Corporation |
30V, 62A, SINGLE N-CHANNEL POWER
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1342 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (3.1x3.1)
- Package / Case: 8-PowerWDFN
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
0805 (CERAMICS), 500MW, 5%, SMAL
- Voltage - Zener (Nom) (Vz): 5.6 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 30 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 1 V
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 0805 (2012 Metric)
- Supplier Device Package: 0805
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
150NS, 2A, 200V, FAST RECOVERY R
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 16pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock30,000 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 4A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 65pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 15A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
1A, 800V, STANDARD RECOVERY RECT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 7pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: SMAF
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock22,500 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A TS-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: T-18, Axial
- Supplier Device Package: TS-1
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock15,000 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 150V 1.4A SOT26
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Tc)
- Rds On (Max) @ Id, Vgs: 480mOhm @ 1.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-26
- Package / Case: SOT-23-6
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Package: - |
Stock51,390 |
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Taiwan Semiconductor Corporation |
DIODE ZENER 13V 3W DO214AA
- Voltage - Zener (Nom) (Vz): 13 V
- Tolerance: ±5%
- Power - Max: 3 W
- Impedance (Max) (Zzt): 7 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 9.9 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE ARR SCHOTT 100V THINDPAK
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: ThinDPAK
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Package: - |
Stock13,488 |
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