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Taiwan Semiconductor Corporation |
DIODE, ZENER, 13V, 1000MW, %, SU
- Voltage - Zener (Nom) (Vz): 13.25V
- Tolerance: ±6.41%
- Power - Max: 1W
- Impedance (Max) (Zzt): 10 Ohms
- Current - Reverse Leakage @ Vr: 2µA @ 10V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock3,712 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 27V, 2000MW, %, DO
- Voltage - Zener (Nom) (Vz): 27V
- Tolerance: ±5%
- Power - Max: 2W
- Impedance (Max) (Zzt): 18 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 20.6V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
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Package: DO-204AC, DO-15, Axial |
Stock5,984 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 180V, 1000MW, %, S
- Voltage - Zener (Nom) (Vz): 180V
- Tolerance: ±5%
- Power - Max: 1W
- Impedance (Max) (Zzt): 450 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 130V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD123W
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Package: SOD-123W |
Stock2,880 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 13V, 1000MW, %, AE
- Voltage - Zener (Nom) (Vz): 13.25V
- Tolerance: ±6.41%
- Power - Max: 1W
- Impedance (Max) (Zzt): 10 Ohms
- Current - Reverse Leakage @ Vr: 2µA @ 10V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock7,328 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 24V, 800MW, %, SUB
- Voltage - Zener (Nom) (Vz): 24V
- Tolerance: ±5.83%
- Power - Max: 800mW
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 18V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock5,712 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 200V, 1000MW, 5%,
- Voltage - Zener (Nom) (Vz): 200V
- Tolerance: ±5%
- Power - Max: 1W
- Impedance (Max) (Zzt): 1500 Ohms
- Current - Reverse Leakage @ Vr: 5µA @ 152V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
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Package: DO-204AL, DO-41, Axial |
Stock2,384 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 51V, 1000MW, 5%, M
- Voltage - Zener (Nom) (Vz): 51V
- Tolerance: ±5%
- Power - Max: 1W
- Impedance (Max) (Zzt): 95 Ohms
- Current - Reverse Leakage @ Vr: 5µA @ 38.8V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF
- Supplier Device Package: MELF
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Package: DO-213AB, MELF |
Stock3,264 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 20V, 200MW, 2%, SO
- Voltage - Zener (Nom) (Vz): 20V
- Tolerance: ±2%
- Power - Max: 200mW
- Impedance (Max) (Zzt): 55 Ohms
- Current - Reverse Leakage @ Vr: 45nA @ 14V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323F
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Package: SC-90, SOD-323F |
Stock4,240 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 5.1V, 500MW, 2%, M
- Voltage - Zener (Nom) (Vz): 5.1V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 35 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 1V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: Mini MELF
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Package: DO-213AC, MINI-MELF, SOD-80 |
Stock7,168 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 20V, 500MW, 2%, MM
- Voltage - Zener (Nom) (Vz): 20V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 55 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 15V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: Mini MELF
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Package: DO-213AC, MINI-MELF, SOD-80 |
Stock6,336 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 40A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, TS-6P
- Supplier Device Package: TS-6P
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Package: 4-SIP, TS-6P |
Stock3,504 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, SCHOTTKY BRIDG
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 40V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
- Current - Reverse Leakage @ Vr: 100µA @ 40V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: ABS
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Package: 4-SMD, Gull Wing |
Stock6,576 |
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Taiwan Semiconductor Corporation |
40V, 100A, SINGLE N-CHANNEL POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6228 pF @ 25 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 8-PDFNU (4.9x5.75)
- Package / Case: 8-PowerTDFN
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Package: - |
Stock15,000 |
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Taiwan Semiconductor Corporation |
BRIDGE RECT 1P 800V 20A TS-6P
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800 V
- Current - Average Rectified (Io): 20 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, TS-6P
- Supplier Device Package: TS-6P
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Package: - |
Stock3,363 |
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Taiwan Semiconductor Corporation |
DIODE ZENER 22V 2W DO204AC
- Voltage - Zener (Nom) (Vz): 22 V
- Tolerance: ±5%
- Power - Max: 2 W
- Impedance (Max) (Zzt): 12 Ohms
- Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE ZENER 11V 500MW 0805
- Voltage - Zener (Nom) (Vz): 11 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 20 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 0805 (2012 Metric)
- Supplier Device Package: 0805
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 4A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 65pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock18,000 |
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Taiwan Semiconductor Corporation |
DIODE ARR SCHOTT 150V ITO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 150 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
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Package: - |
Stock6 |
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Taiwan Semiconductor Corporation |
DIODE ZENER 33V 500MW 0805
- Voltage - Zener (Nom) (Vz): 33 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 80 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 24 V
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 0805 (2012 Metric)
- Supplier Device Package: 0805
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1.5A DO204AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 4A TO277A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 200 V
- Capacitance @ Vr, F: 71pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock31,830 |
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Taiwan Semiconductor Corporation |
0805 (CERAMICS), 500MW, 5%, SMAL
- Voltage - Zener (Nom) (Vz): 3 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 85 Ohms
- Current - Reverse Leakage @ Vr: 4 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 0805 (2012 Metric)
- Supplier Device Package: 0805
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
SOD-323F, 200MW, 2%, SMALL SIGNA
- Voltage - Zener (Nom) (Vz): 15 V
- Tolerance: ±2%
- Power - Max: 200 mW
- Impedance (Max) (Zzt): 40 Ohms
- Current - Reverse Leakage @ Vr: 45 nA @ 11 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323F
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A SOD128
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 200 V
- Capacitance @ Vr, F: 11pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD-128
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock20,970 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A SOD123W
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock85,140 |
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Taiwan Semiconductor Corporation |
75NS, 1A, 800V, HIGH EFFICIENT R
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 800 V
- Capacitance @ Vr, F: 7pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock20,970 |
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Taiwan Semiconductor Corporation |
SOT-23, 300MW, 5%, SMALL SIGNAL
- Configuration: 1 Pair Common Anode
- Voltage - Zener (Nom) (Vz): 4.7 V
- Tolerance: ±5%
- Power - Max: 300 mW
- Impedance (Max) (Zzt): 78 Ohms
- Current - Reverse Leakage @ Vr: -
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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