|
|
|
Vishay Siliconix |
MOSFET N-CH 40V 12A SC-70
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs: 26 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Single
- Package / Case: PowerPAK? SC-70-6
|
Package: PowerPAK? SC-70-6 |
Stock3,376 |
|
MOSFET (Metal Oxide) | 40V | 12A (Tc) | 2.5V, 10V | 1.4V @ 250µA | 21.5nC @ 10V | 700pF @ 20V | ±12V | - | 3.5W (Ta), 19W (Tc) | 26 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 20V MICROFOOT
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
- Rds On (Max) @ Id, Vgs: 44 mOhm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-UFBGA
|
Package: 4-UFBGA |
Stock6,744 |
|
MOSFET (Metal Oxide) | 20V | - | 2.5V, 10V | 1.2V @ 250µA | 27nC @ 10V | 765pF @ 10V | ±12V | - | 780mW (Ta), 1.8W (Tc) | 44 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-UFBGA |
|
|
|
Vishay Siliconix |
MOSFET P-CH 30V 12A SC70-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Single
- Package / Case: PowerPAK? SC-70-6
|
Package: PowerPAK? SC-70-6 |
Stock2,896 |
|
MOSFET (Metal Oxide) | 30V | 12A (Tc) | 2.5V, 10V | 1.5V @ 250µA | 72nC @ 10V | 2140pF @ 15V | ±12V | - | 3.5W (Ta), 19W (Tc) | 20 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 12V 7.1A SOT-23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,263,060 |
|
MOSFET (Metal Oxide) | 12V | 7.1A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 25nC @ 4.5V | 1225pF @ 6V | ±8V | - | 1.25W (Ta), 2.5W (Tc) | 35 mOhm @ 5.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 20V 7.9A 6-TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock803,112 |
|
MOSFET (Metal Oxide) | 20V | 7.9A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 18nC @ 8V | 666pF @ 10V | ±8V | - | 1.7W (Ta), 2.7W (Tc) | 28 mOhm @ 5.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 12V 4A SC-70-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6 (SOT-363)
- Package / Case: 6-TSSOP, SC-88, SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock454,104 |
|
MOSFET (Metal Oxide) | 12V | 4A (Tc) | 1.5V, 4.5V | 1V @ 250µA | 36nC @ 8V | - | ±10V | - | 1.6W (Ta), 2.8W (Tc) | 34 mOhm @ 5.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 30V MICRO FOOT
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 135 mOhm @ 1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-XFBGA, CSPBGA
|
Package: 4-XFBGA, CSPBGA |
Stock4,304 |
|
MOSFET (Metal Oxide) | 30V | - | 2.5V, 4.5V | 1.3V @ 250µA | 17nC @ 10V | 440pF @ 15V | ±12V | - | 500mW (Ta) | 135 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA, CSPBGA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 20V 0.63A SC-75A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 240mW (Ta)
- Rds On (Max) @ Id, Vgs: 396 mOhm @ 600mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-75A
- Package / Case: SC-75, SOT-416
|
Package: SC-75, SOT-416 |
Stock572,928 |
|
MOSFET (Metal Oxide) | 20V | - | 1.5V, 4.5V | 1V @ 250µA | 2nC @ 8V | 43pF @ 10V | ±8V | - | 240mW (Ta) | 396 mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-75A | SC-75, SOT-416 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 20V SC-89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 220mW (Ta)
- Rds On (Max) @ Id, Vgs: 420 mOhm @ 500mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-89-3
- Package / Case: SC-89, SOT-490
|
Package: SC-89, SOT-490 |
Stock3,712 |
|
MOSFET (Metal Oxide) | 20V | - | 1.5V, 4.5V | 1V @ 250µA | 2.7nC @ 8V | 43pF @ 10V | ±8V | - | 220mW (Ta) | 420 mOhm @ 500mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 500V 46A SUPER247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 540W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 28A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: SUPER-247 (TO-274AA)
- Package / Case: TO-274AA
|
Package: TO-274AA |
Stock7,216 |
|
MOSFET (Metal Oxide) | 500V | 46A (Tc) | 10V | 5V @ 250µA | 380nC @ 10V | 8110pF @ 25V | ±30V | - | 540W (Tc) | 100 mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247 (TO-274AA) | TO-274AA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 33A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3508pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Rds On (Max) @ Id, Vgs: 99 mOhm @ 16.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock24,828 |
|
MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 3508pF @ 100V | ±30V | - | 278W (Tc) | 99 mOhm @ 16.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET P-CH 100V 90A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 326nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock85,944 |
|
MOSFET (Metal Oxide) | 100V | 90A (Tc) | 4.5V, 10V | 3V @ 250µA | 326nC @ 10V | 11100pF @ 50V | ±20V | - | 13.6W (Ta), 375W (Tc) | 19 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock4,896 |
|
MOSFET (Metal Oxide) | 80V | 60A (Tc) | 4.5V, 10V | 2.8V @ 250µA | 90nC @ 10V | 2900pF @ 40V | ±20V | - | 6.25W (Ta), 104W (Tc) | 4.8 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock77,736 |
|
MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 155nC @ 10V | 5660pF @ 20V | ±20V | - | 6.25W (Ta), 104W (Tc) | 2.3 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 60V 50A TO252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 136W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock24,900 |
|
MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 165nC @ 10V | 4950pF @ 25V | ±20V | - | 3W (Ta), 136W (Tc) | 15 mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock5,008 |
|
MOSFET (Metal Oxide) | 80V | 60A (Tc) | 4.5V, 10V | 2.8V @ 250µA | 86nC @ 10V | 2800pF @ 40V | ±20V | - | 6.25W (Ta), 104W (Tc) | 5.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 80V 28A PPAK SO-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 10.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock4,352 |
|
MOSFET (Metal Oxide) | 80V | 28A (Tc) | 4.5V, 10V | 3V @ 250µA | 160nC @ 10V | 4700pF @ 40V | ±20V | - | 5.2W (Ta), 83.3W (Tc) | 25 mOhm @ 10.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 20V 60A PPAK SO-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 585nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 1.95 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock437,616 |
|
MOSFET (Metal Oxide) | 20V | 60A (Tc) | 2.5V, 10V | 1.4V @ 250µA | 585nC @ 10V | 20000pF @ 10V | ±12V | - | 6.25W (Ta), 104W (Tc) | 1.95 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 200V 3.2A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock83,580 |
|
MOSFET (Metal Oxide) | 200V | 3.2A (Ta) | 6V, 10V | 4.5V @ 250µA | 42nC @ 10V | - | ±20V | - | 1.9W (Ta) | 80 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 200V 3.2A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock457,800 |
|
MOSFET (Metal Oxide) | 200V | 3.2A (Ta) | 6V, 10V | 4.5V @ 250µA | 42nC @ 10V | - | ±20V | - | 1.9W (Ta) | 80 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 60V 15A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock62,088 |
|
MOSFET (Metal Oxide) | 60V | 15A (Ta) | 4.5V, 10V | 3V @ 250µA | 160nC @ 10V | - | ±20V | - | 1.9W (Ta) | 7.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 40V 10.5A 1212-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 16.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
|
Package: PowerPAK? 1212-8 |
Stock140,520 |
|
MOSFET (Metal Oxide) | 40V | 10.5A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 23nC @ 4.5V | - | ±20V | - | 1.5W (Ta) | 7.8 mOhm @ 16.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 40V 10.5A 1212-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 16.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
|
Package: PowerPAK? 1212-8 |
Stock343,512 |
|
MOSFET (Metal Oxide) | 40V | 10.5A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 23nC @ 4.5V | - | ±20V | - | 1.5W (Ta) | 7.8 mOhm @ 16.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4365pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock37,464 |
|
MOSFET (Metal Oxide) | 60V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 96nC @ 10V | 4365pF @ 30V | ±20V | - | 6.25W (Ta), 104W (Tc) | 2.7 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 150V 4A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock1,034,988 |
|
MOSFET (Metal Oxide) | 150V | 4A (Ta) | 10V | 4.5V @ 250µA | 36nC @ 10V | - | ±20V | - | 1.9W (Ta) | 50 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 60V 9.6A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock355,908 |
|
MOSFET (Metal Oxide) | 60V | 9.6A (Ta) | 6V, 10V | 4V @ 250µA | 57nC @ 10V | - | ±20V | - | 1.9W (Ta) | 11 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 150V 53.7A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1286pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock18,864 |
|
MOSFET (Metal Oxide) | 150V | 53.7A (Tc) | 7.5V, 10V | 4.5V @ 250µA | 47nC @ 10V | 1286pF @ 75V | ±20V | - | 6.25W (Ta), 104W (Tc) | 18 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 60V 8.6A PPAK SO-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta)
- Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 14.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock33,552 |
|
MOSFET (Metal Oxide) | 60V | 8.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 190nC @ 10V | - | ±20V | - | 1.9W (Ta) | 14.5 mOhm @ 14.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
0
Login/Register
BOM
Cart
