Page 103 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

SIA469DJ-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 12A SC70-6

Package: PowerPAK? SC-70-6

Stock4,416
SI1424EDH-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 4A SOT-363

Package: 6-TSSOP, SC-88, SOT-363

Stock74,400
SI8823EDB-T2-E1
Vishay Siliconix

MOSFET P-CH 20V 2.7A 4-MICROFOOT

Package: 4-XFBGA

Stock7,424
SI3493DDV-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 8A 6TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock7,840
SI1078X-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 1.02A SOT563F

Package: SOT-563, SOT-666

Stock3,616
SI2372DS-T1-GE3
Vishay Siliconix

MOSFET N-CHAN 30V SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock5,264
SI1013CX-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 0.45A SC89-3

Package: SC-89, SOT-490

Stock197,820
SIHG24N65E-GE3
Vishay Siliconix

MOSFET N-CH 650V 24A TO247AC

Package: TO-247-3

Stock6,060
SIHP24N65E-GE3
Vishay Siliconix

MOSFET N-CH 650V 24A TO220AB

Package: TO-220-3

Stock5,552
SIHG22N65E-GE3
Vishay Siliconix

MOSFET N-CH 650V 22A TO-247AC

Package: TO-247-3

Stock6,944
SIHG22N50D-GE3
Vishay Siliconix

MOSFET N-CH 500V 22A TO-247AC

Package: TO-247-3

Stock4,176
SIHB22N65E-GE3
Vishay Siliconix

MOSFET N-CH 650V 22A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,856
SIHB21N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 21A D2PAK TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,144
SIHF15N65E-GE3
Vishay Siliconix

MOSFET N-CH 650V 15A TO220AB

Package: TO-220-3 Full Pack

Stock9,684
SIHG20N50E-GE3
Vishay Siliconix

MOSFET N-CH 500V 19A TO-247AC

Package: TO-247-3

Stock4,016
SIHA25N50E-E3
Vishay Siliconix

MOSFET N-CH 500V 26A TO-220FP

Package: TO-220-3 Full Pack

Stock5,904
SIHA15N60E-E3
Vishay Siliconix

MOSFET N-CH 600V 15A TO-220

Package: TO-220-3 Full Pack

Stock7,632
SIHP20N50E-GE3
Vishay Siliconix

MOSFET N-CH 500V 19A TO-220AB

Package: TO-220-3

Stock6,324
SIHB15N50E-GE3
Vishay Siliconix

MOSFET N-CH 500V 14.5A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,312
SIHA12N60E-E3
Vishay Siliconix

MOSFET N-CH 600V 12A TO-220

Package: TO-220-3 Full Pack

Stock5,232

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SIA469DJ-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 12A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15.6W (Tc) Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: PowerPAK? SC-70-6	Package: PowerPAK? SC-70-6	Stock4,416	MOSFET (Metal Oxide)	30V	12A (Tc)	4.5V, 10V	3V @ 250µA	15nC @ 4.5V	1020pF @ 15V	±20V	-	15.6W (Tc)	26.5 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	-	PowerPAK? SC-70-6
SI1424EDH-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 4A SOT-363 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock74,400	MOSFET (Metal Oxide)	20V	4A (Tc)	4.5V	1V @ 250µA	18nC @ 8V	-	±8V	-	1.56W (Ta), 2.8W (Tc)	33 mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-363	6-TSSOP, SC-88, SOT-363
SI8823EDB-T2-E1	Vishay Siliconix	MOSFET P-CH 20V 2.7A 4-MICROFOOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 900mW (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-MICRO FOOT? (0.8x0.8) Package / Case: 4-XFBGA	Package: 4-XFBGA	Stock7,424	MOSFET (Metal Oxide)	20V	2.7A (Tc)	1.5V, 4.5V	800mV @ 250µA	10nC @ 4.5V	580pF @ 10V	±8V	-	900mW (Tc)	95 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-MICRO FOOT? (0.8x0.8)	4-XFBGA
SI3493DDV-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 8A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.6W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock7,840	MOSFET (Metal Oxide)	20V	8A (Tc)	1.8V, 4.5V	1V @ 250µA	30nC @ 4.5V	1825pF @ 10V	±8V	-	3.6W (Tc)	24 mOhm @ 7.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI1078X-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 1.02A SOT563F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.02A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 240mW (Tc) Rds On (Max) @ Id, Vgs: 142 mOhm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock3,616	MOSFET (Metal Oxide)	30V	1.02A (Tc)	2.5V, 10V	1.5V @ 250µA	3nC @ 4.5V	110pF @ 15V	±12V	-	240mW (Tc)	142 mOhm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	-	SOT-563, SOT-666
SI2372DS-T1-GE3	Vishay Siliconix	MOSFET N-CHAN 30V SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 288pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock5,264	MOSFET (Metal Oxide)	30V	4A (Ta), 5.3A (Tc)	4.5V, 10V	2.5V @ 250µA	8.9nC @ 10V	288pF @ 15V	±20V	-	960mW (Ta), 1.7W (Tc)	33 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI1013CX-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 0.45A SC89-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 190mW (Ta) Rds On (Max) @ Id, Vgs: 760 mOhm @ 400mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-3 Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock197,820	MOSFET (Metal Oxide)	20V	450mA (Ta)	4.5V	1V @ 250µA	2.5nC @ 4.5V	45pF @ 10V	±8V	-	190mW (Ta)	760 mOhm @ 400mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-3	SC-89, SOT-490
SIHG24N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 24A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock6,060	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	4V @ 250µA	122nC @ 10V	2740pF @ 100V	±30V	-	250W (Tc)	145 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
SIHP24N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 24A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,552	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	4V @ 250µA	122nC @ 10V	2740pF @ 100V	±30V	-	250W (Tc)	145 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SIHG22N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 22A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2415pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock6,944	MOSFET (Metal Oxide)	650V	22A (Tc)	10V	4V @ 250µA	110nC @ 10V	2415pF @ 100V	±30V	-	227W (Tc)	180 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
SIHG22N50D-GE3	Vishay Siliconix	MOSFET N-CH 500V 22A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock4,176	MOSFET (Metal Oxide)	500V	22A (Tc)	10V	5V @ 250µA	98nC @ 10V	1938pF @ 100V	±30V	-	312W (Tc)	230 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
SIHB22N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 22A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2415pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,856	MOSFET (Metal Oxide)	650V	22A (Tc)	10V	4V @ 250µA	110nC @ 10V	2415pF @ 100V	±30V	-	227W (Tc)	180 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHB21N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 21A D2PAK TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 176 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB (D2PAK) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,144	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	4V @ 250µA	84nC @ 10V	2030pF @ 100V	±30V	-	227W (Tc)	176 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AB (D2PAK)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHF15N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 15A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock9,684	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	4V @ 250µA	96nC @ 10V	1640pF @ 100V	±30V	-	34W (Tc)	280 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SIHG20N50E-GE3	Vishay Siliconix	MOSFET N-CH 500V 19A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 184 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock4,016	MOSFET (Metal Oxide)	500V	19A (Tc)	10V	4V @ 250µA	92nC @ 10V	1640pF @ 100V	±30V	-	179W (Tc)	184 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
SIHA25N50E-E3	Vishay Siliconix	MOSFET N-CH 500V 26A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,904	MOSFET (Metal Oxide)	500V	26A (Tc)	10V	4V @ 250µA	86nC @ 10V	1980pF @ 100V	±30V	-	35W (Tc)	145 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SIHA15N60E-E3	Vishay Siliconix	MOSFET N-CH 600V 15A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,632	MOSFET (Metal Oxide)	600V	15A (Tc)	10V	4V @ 250µA	76nC @ 10V	1350pF @ 100V	±30V	-	34W (Tc)	280 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SIHP20N50E-GE3	Vishay Siliconix	MOSFET N-CH 500V 19A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 184 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,324	MOSFET (Metal Oxide)	500V	19A (Tc)	10V	4V @ 250µA	92nC @ 10V	1640pF @ 100V	±30V	-	179W (Tc)	184 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SIHB15N50E-GE3	Vishay Siliconix	MOSFET N-CH 500V 14.5A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1162pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,312	MOSFET (Metal Oxide)	500V	14.5A (Tc)	10V	4V @ 250µA	66nC @ 10V	1162pF @ 100V	±30V	-	156W (Tc)	280 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHA12N60E-E3	Vishay Siliconix	MOSFET N-CH 600V 12A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 937pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,232	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	4V @ 250µA	58nC @ 10V	937pF @ 100V	±30V	-	33W (Tc)	380 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SIHF6N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 6A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,712	MOSFET (Metal Oxide)	650V	7A (Tc)	10V	4V @ 250µA	48nC @ 10V	820pF @ 100V	±30V	-	31W (Tc)	600 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SIHB12N50E-GE3	Vishay Siliconix	MOSFET N-CH 500V 10.5A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 886pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,208	MOSFET (Metal Oxide)	500V	10.5A (Tc)	10V	4V @ 250µA	50nC @ 10V	886pF @ 100V	±30V	-	114W (Tc)	380 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHP12N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 12A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,240	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	4V @ 250µA	70nC @ 10V	1224pF @ 100V	±30V	-	156W (Tc)	380 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SIHP15N50E-GE3	Vishay Siliconix	MOSFET N-CH 500V 14.5A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1162pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,776	MOSFET (Metal Oxide)	500V	14.5A (Tc)	10V	4V @ 250µA	66nC @ 10V	1162pF @ 100V	±30V	-	156W (Tc)	280 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFBC30ASPBF	Vishay Siliconix	MOSFET N-CH 600V 3.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock13,608	MOSFET (Metal Oxide)	600V	3.6A (Tc)	10V	4.5V @ 250µA	23nC @ 10V	510pF @ 25V	±30V	-	74W (Tc)	2.2 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHF5N50D-E3	Vishay Siliconix	MOSFET N-CH 500V 5.3A TO220 FLPK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,584	MOSFET (Metal Oxide)	500V	5.3A (Tc)	10V	5V @ 250µA	20nC @ 10V	325pF @ 100V	±30V	-	30W (Tc)	1.5 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
IRF9Z34STRLPBF	Vishay Siliconix	MOSFET P-CH 60V 18A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock103,896	MOSFET (Metal Oxide)	60V	18A (Tc)	10V	4V @ 250µA	34nC @ 10V	1100pF @ 25V	±20V	-	3.7W (Ta), 88W (Tc)	140 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHB6N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,184	MOSFET (Metal Oxide)	650V	7A (Tc)	10V	4V @ 250µA	48nC @ 10V	820pF @ 100V	±30V	-	78W (Tc)	600 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB