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Vishay Siliconix |
MOSFET N-CH 20V 5.4A 1206-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET?
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock176,508 |
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MOSFET (Metal Oxide) | 20V | 5.4A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 11nC @ 4.5V | - | ±12V | - | 1.3W (Ta) | 28 mOhm @ 5.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
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Vishay Siliconix |
MOSFET P-CH 20V 12A SC-70
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Single
- Package / Case: PowerPAK? SC-70-6
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Package: PowerPAK? SC-70-6 |
Stock71,640 |
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MOSFET (Metal Oxide) | 20V | 12A (Tc) | 2.5V, 4.5V | 1.2V @ 250µA | 72nC @ 10V | 2130pF @ 10V | ±12V | - | 3.5W (Ta), 19W (Tc) | 16.5 mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
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Vishay Siliconix |
MOSFET N-CH 8V 12A SC70-6L
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1508pF @ 4V
- Vgs (Max): ±5V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 15.7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Single
- Package / Case: PowerPAK? SC-70-6
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Package: PowerPAK? SC-70-6 |
Stock322,224 |
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MOSFET (Metal Oxide) | 8V | 12A (Tc) | 1.2V, 4.5V | 800mV @ 250µA | 25.2nC @ 5V | 1508pF @ 4V | ±5V | - | 3.5W (Ta), 19W (Tc) | 9.4 mOhm @ 15.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
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Vishay Siliconix |
MOSFET P-CH 30V 6A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock32,028 |
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MOSFET (Metal Oxide) | 30V | 6A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 21nC @ 10V | 590pF @ 15V | ±20V | - | 2.4W (Ta), 5W (Tc) | 42 mOhm @ 5.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 30V 2.7A SC-70-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6 (SOT-363)
- Package / Case: 6-TSSOP, SC-88, SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock516,024 |
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MOSFET (Metal Oxide) | 30V | 2.7A (Tc) | 4.5V, 10V | 3V @ 250µA | 6.2nC @ 4.5V | 365pF @ 15V | ±20V | - | 1.5W (Ta), 2.78W (Tc) | 100 mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
MOSFET N-CH 30V 4.9A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta), 1.7W (Tc)
- Rds On (Max) @ Id, Vgs: 44 mOhm @ 4.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock549,252 |
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MOSFET (Metal Oxide) | 30V | 4.9A (Tc) | 2.5V, 4.5V | 1V @ 250µA | 10nC @ 4.5V | 634pF @ 15V | ±8V | - | 1.3W (Ta), 1.7W (Tc) | 44 mOhm @ 4.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 20V 8A 6-TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock1,006,512 |
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MOSFET (Metal Oxide) | 20V | 8A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 18nC @ 5V | 1065pF @ 10V | ±8V | - | 2W (Ta), 3.6W (Tc) | 24 mOhm @ 7.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET N-CH 30V 12A SC-70
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 7.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Single
- Package / Case: PowerPAK? SC-70-6
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Package: PowerPAK? SC-70-6 |
Stock360,012 |
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MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 15nC @ 10V | 560pF @ 15V | ±20V | - | 3.5W (Ta), 19W (Tc) | 17 mOhm @ 7.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
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Vishay Siliconix |
MOSFET P-CH 60V 2.5A SSOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Tc)
- Rds On (Max) @ Id, Vgs: 170 mOhm @ 2.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: -
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,872 |
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MOSFET (Metal Oxide) | 60V | 2.8A (Tc) | 10V | 2.5V @ 250µA | 15nC @ 10V | 620pF @ 30V | ±20V | - | 2W (Tc) | 170 mOhm @ 2.4A, 10V | -55°C ~ 175°C (TA) | Surface Mount | - | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 2.5A SSOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Tc)
- Rds On (Max) @ Id, Vgs: 177 mOhm @ 2.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: -
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,632 |
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MOSFET (Metal Oxide) | 60V | 2.8A (Tc) | 10V | 2.5V @ 250µA | 12nC @ 10V | 550pF @ 30V | ±20V | - | 2W (Tc) | 177 mOhm @ 2.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | - | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 20V 7.8A SC70-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 13.6W (Tc)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 4.5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Single
- Package / Case: PowerPAK? SC-70-6
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Package: PowerPAK? SC-70-6 |
Stock6,176 |
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MOSFET (Metal Oxide) | 20V | 7.8A (Tc) | 1.8V, 4.5V | 1.1V @ 250µA | 8nC @ 4.5V | 485pF @ 10V | ±8V | - | 13.6W (Tc) | 28 mOhm @ 5A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
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Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2815pF @ 15V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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Package: PowerPAK? SO-8 |
Stock3,312 |
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MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 56nC @ 10V | 2815pF @ 15V | +20V, -16V | - | - | 2.8 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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Vishay Siliconix |
MOSFET P-CH 20V MICROFOOT
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-XFBGA, CSPBGA
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Package: 4-XFBGA, CSPBGA |
Stock36,132 |
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MOSFET (Metal Oxide) | 20V | - | 1.5V, 4.5V | 1V @ 250µA | 24nC @ 8V | 610pF @ 10V | ±8V | - | 780mW (Ta), 1.8W (Tc) | 100 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA, CSPBGA |
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Vishay Siliconix |
MOSFET P-CH 40V 7.2A 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 4.2W (Tc)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock375,492 |
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MOSFET (Metal Oxide) | 40V | 7.2A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 38nC @ 10V | 970pF @ 20V | ±20V | - | 2.5W (Ta), 4.2W (Tc) | 45 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 12A 1212-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 15.6W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
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Package: PowerPAK? 1212-8 |
Stock77,148 |
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MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 10.5nC @ 10V | 398pF @ 15V | ±25V | - | 3.2W (Ta), 15.6W (Tc) | 20 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 20V MICROFOOT
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-WLCSP (1.6x1.6)
- Package / Case: 4-UFBGA, WLCSP
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Package: 4-UFBGA, WLCSP |
Stock720,000 |
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MOSFET (Metal Oxide) | 20V | - | 1.8V, 4.5V | 900mV @ 250µA | 110nC @ 10V | 2800pF @ 10V | ±10V | - | 1.1W (Ta), 2.7W (Tc) | 23 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-WLCSP (1.6x1.6) | 4-UFBGA, WLCSP |
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Vishay Siliconix |
MOSFET P-CH 30V 13A MICROFOOT
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
- Rds On (Max) @ Id, Vgs: 53 mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-microfoot
- Package / Case: 6-UFBGA
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Package: 6-UFBGA |
Stock4,976 |
|
MOSFET (Metal Oxide) | 30V | 13A (Tc) | 2V, 4.5V | 1.1V @ 250µA | 49nC @ 10V | 1320pF @ 15V | ±12V | - | 2.77W (Ta), 13W (Tc) | 53 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-microfoot | 6-UFBGA |
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Vishay Siliconix |
MOSFET P-CH 30V MICROFOOT
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-UFBGA
|
Package: 4-UFBGA |
Stock5,280 |
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MOSFET (Metal Oxide) | 30V | - | 2.5V, 10V | 1.2V @ 250µA | 80nC @ 10V | 2240pF @ 15V | ±12V | - | 1.1W (Ta), 2.7W (Tc) | 31 mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-UFBGA |
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Vishay Siliconix |
MOSFET P-CH 20V 16A MICROFOOT
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-Micro Foot?
- Package / Case: 6-MICRO FOOT?
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Package: 6-MICRO FOOT? |
Stock4,453,260 |
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MOSFET (Metal Oxide) | 20V | 16A (Tc) | 1.8V, 4.5V | 1.3V @ 250µA | 30nC @ 5V | 1300pF @ 10V | ±12V | - | 2.77W (Ta), 13W (Tc) | 32 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-Micro Foot? | 6-MICRO FOOT? |
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Vishay Siliconix |
MOSFET N-CH 20V 6A SC-75-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.95W (Ta), 10W (Tc)
- Rds On (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-75-6L Single
- Package / Case: PowerPAK? SC-75-6L
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Package: PowerPAK? SC-75-6L |
Stock2,352 |
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MOSFET (Metal Oxide) | 20V | 6A (Tc) | 2.5V, 4.5V | 1.4V @ 250µA | 12nC @ 10V | 350pF @ 10V | ±12V | - | 1.95W (Ta), 10W (Tc) | 46 mOhm @ 3.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-75-6L Single | PowerPAK? SC-75-6L |
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Vishay Siliconix |
MOSFET P-CH 30V 3A SC70
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Tc)
- Rds On (Max) @ Id, Vgs: 175 mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6 (SOT-363)
- Package / Case: 6-TSSOP, SC-88, SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock3,408 |
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MOSFET (Metal Oxide) | 30V | 3A (Tc) | 4.5V, 10V | 2V @ 250µA | 6.5nC @ 4.5V | 205pF @ 25V | ±20V | - | 3W (Tc) | 175 mOhm @ 2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
MOSFET N-CH 30V 8A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,424 |
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MOSFET (Metal Oxide) | 30V | 8A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 14.5nC @ 10V | 540pF @ 15V | ±20V | - | 3W (Tc) | 24 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-236 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 6A 1206-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 9.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET?
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock2,064 |
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MOSFET (Metal Oxide) | 30V | 6A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 29nC @ 10V | 1200pF @ 10V | ±20V | - | 2.5W (Ta), 6.3W (Tc) | 19 mOhm @ 9.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
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Vishay Siliconix |
MOSFET P-CH 20V 9A PPAK SC75-6L
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-75-6L Single
- Package / Case: PowerPAK? SC-75-6L
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Package: PowerPAK? SC-75-6L |
Stock2,624 |
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MOSFET (Metal Oxide) | 20V | 9A (Tc) | 4.5V | 1V @ 250µA | 44nC @ 8V | - | ±8V | - | 2.4W (Ta), 13W (Tc) | 35 mOhm @ 4.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-75-6L Single | PowerPAK? SC-75-6L |
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Vishay Siliconix |
MOSFET N-CH 60V 240MA SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 5V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,824,988 |
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MOSFET (Metal Oxide) | 60V | 240mA (Ta) | 4.5V, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | 21pF @ 5V | ±20V | - | 350mW (Ta) | 3 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 9A SC-75-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
- Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-75-6L Single
- Package / Case: PowerPAK? SC-75-6L
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Package: PowerPAK? SC-75-6L |
Stock2,256 |
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MOSFET (Metal Oxide) | 20V | 9A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 21nC @ 8V | - | ±8V | - | 2.4W (Ta), 13W (Tc) | 58 mOhm @ 3.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-75-6L Single | PowerPAK? SC-75-6L |
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Vishay Siliconix |
MOSFET N-CH 60V 240MA SC-70-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 280mW (Ta)
- Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 250mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-3
- Package / Case: SC-70, SOT-323
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Package: SC-70, SOT-323 |
Stock932,736 |
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MOSFET (Metal Oxide) | 60V | 240mA (Ta) | 3V, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | - | ±20V | - | 280mW (Ta) | 2.5 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 | SC-70, SOT-323 |
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Vishay Siliconix |
MOSFET N-CH 30V MICRO FOOT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 109 mOhm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-XFBGA
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Package: 4-XFBGA |
Stock4,816 |
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MOSFET (Metal Oxide) | 30V | - | 2.5V, 10V | 1.4V @ 250µA | 8nC @ 10V | 195pF @ 15V | ±12V | - | 500mW (Ta) | 109 mOhm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA |
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