Page 85 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

SI7655ADN-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 40A 1212-8S

Package: 8-PowerVDFN

Stock7,568
SQJ416EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 100V 27A SO8

Package: PowerPAK? SO-8

Stock7,312
SQJA00EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 60V 30A SO8

Package: PowerPAK? SO-8

Stock7,040
SI7686DP-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 35A PPAK SO-8

Package: PowerPAK? SO-8

Stock2,816,748
SI4101DY-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 25.7A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,784
SI3430DV-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 1.8A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock1,248,324
SI4835DDY-T1-E3
Vishay Siliconix

MOSFET P-CH 30V 13A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,196,940
SIA408DJ-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 4.5A SC70-6

Package: PowerPAK? SC-70-6

Stock360,012
SQ7415AEN-T1_GE3
Vishay Siliconix

MOSFET P-CH 60V 16A 1212-8

Package: PowerPAK? 1212-8

Stock4,256
IRFR9010TRPBF
Vishay Siliconix

MOSFET P-CH 50V 5.3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,104
SQJ457EP-T1_GE3
Vishay Siliconix

MOSFET P-CH 60V 36A SO8

Package: PowerPAK? SO-8

Stock3,056
IRFR9110TRPBF
Vishay Siliconix

MOSFET P-CH 100V 3.1A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock15,720
SQJ860EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 40V 60A SO8

Package: PowerPAK? SO-8

Stock3,328
SQJA96EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 80V 30A SO8

Package: PowerPAK? SO-8

Stock7,568
SQJA86EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 80V 30A SO8

Package: PowerPAK? SO-8

Stock5,328
SISA12ADN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 25A 1212-8

Package: PowerPAK? 1212-8

Stock86,676
SI4172DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 15A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,407,692
SQ7414AEN-T1_GE3
Vishay Siliconix

MOSFET N-CH 60V 5.6A PPAK 1212-8

Package: PowerPAK? 1212-8

Stock7,232
SQS401EN-T1_GE3
Vishay Siliconix

MOSFET P-CH 40V 16A

Package: PowerPAK? 1212-8

Stock6,480
SISS27DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 50A PPAK 1212-8S

Package: 8-PowerVDFN

Stock7,072

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SI7655ADN-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 40A 1212-8S FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 20A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8S (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,568	MOSFET (Metal Oxide)	20V	40A (Tc)	2.5V, 10V	1.1V @ 250µA	225nC @ 10V	6600pF @ 10V	±12V	-	4.8W (Ta), 57W (Tc)	3.6 mOhm @ 20A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8S (3.3x3.3)	8-PowerVDFN
SQJ416EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 100V 27A SO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock7,312	MOSFET (Metal Oxide)	100V	27A (Tc)	10V	3.5V @ 250µA	20nC @ 10V	800pF @ 25V	±20V	-	45W (Tc)	30 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SQJA00EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 60V 30A SO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock7,040	MOSFET (Metal Oxide)	60V	30A (Tc)	10V	3.5V @ 250µA	35nC @ 10V	1700pF @ 25V	±20V	-	48W (Tc)	13 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7686DP-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 35A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 37.9W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock2,816,748	MOSFET (Metal Oxide)	30V	35A (Tc)	4.5V, 10V	3V @ 250µA	26nC @ 10V	1220pF @ 15V	±20V	-	5W (Ta), 37.9W (Tc)	9.5 mOhm @ 13.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI4101DY-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 25.7A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 203nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8190pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 6W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,784	MOSFET (Metal Oxide)	30V	25.7A (Tc)	4.5V, 10V	2.5V @ 250µA	203nC @ 10V	8190pF @ 15V	±20V	-	2.9W (Ta), 6W (Tc)	6 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI3430DV-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.14W (Ta) Rds On (Max) @ Id, Vgs: 170 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,248,324	MOSFET (Metal Oxide)	100V	1.8A (Ta)	6V, 10V	2V @ 250µA (Min)	6.6nC @ 10V	-	±20V	-	1.14W (Ta)	170 mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI4835DDY-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 13A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,196,940	MOSFET (Metal Oxide)	30V	13A (Tc)	4.5V, 10V	3V @ 250µA	65nC @ 10V	1960pF @ 15V	±25V	-	2.5W (Ta), 5.6W (Tc)	18 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SIA408DJ-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 4.5A SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.4W (Ta), 17.9W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Single Package / Case: PowerPAK? SC-70-6	Package: PowerPAK? SC-70-6	Stock360,012	MOSFET (Metal Oxide)	30V	4.5A (Tc)	2.5V, 10V	1.6V @ 250µA	24nC @ 10V	830pF @ 15V	±12V	-	3.4W (Ta), 17.9W (Tc)	36 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Single	PowerPAK? SC-70-6
SQ7415AEN-T1_GE3	Vishay Siliconix	MOSFET P-CH 60V 16A 1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1385pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 53W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock4,256	MOSFET (Metal Oxide)	60V	16A (Tc)	4.5V, 10V	2.5V @ 250µA	38nC @ 10V	1385pF @ 25V	±20V	-	53W (Tc)	65 mOhm @ 5.7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
IRFR9010TRPBF	Vishay Siliconix	MOSFET P-CH 50V 5.3A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,104	MOSFET (Metal Oxide)	50V	5.3A (Tc)	10V	4V @ 250µA	9.1nC @ 10V	240pF @ 25V	±20V	-	25W (Tc)	500 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SQJ457EP-T1_GE3	Vishay Siliconix	MOSFET P-CH 60V 36A SO8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock3,056	MOSFET (Metal Oxide)	60V	36A (Tc)	4.5V, 10V	2.5V @ 250µA	100nC @ 10V	3400pF @ 25V	±20V	-	68W (Tc)	25 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
IRFR9110TRPBF	Vishay Siliconix	MOSFET P-CH 100V 3.1A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock15,720	MOSFET (Metal Oxide)	100V	3.1A (Tc)	10V	4V @ 250µA	8.7nC @ 10V	200pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	1.2 Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SQJ860EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 60A SO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock3,328	MOSFET (Metal Oxide)	40V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	55nC @ 10V	2700pF @ 25V	±20V	-	48W (Tc)	6 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SQJA96EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 80V 30A SO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock7,568	MOSFET (Metal Oxide)	80V	30A (Tc)	10V	3.5V @ 250µA	25nC @ 10V	1200pF @ 25V	±20V	-	48W (Tc)	21.5 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SQJA86EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 80V 30A SO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock5,328	MOSFET (Metal Oxide)	80V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	32nC @ 10V	1400pF @ 25V	±20V	-	48W (Tc)	19 mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SISA12ADN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 25A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock86,676	MOSFET (Metal Oxide)	30V	25A (Tc)	4.5V, 10V	2.2V @ 250µA	45nC @ 10V	2070pF @ 15V	+20V, -16V	-	3.5W (Ta), 28W (Tc)	4.3 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SI4172DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 15A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,407,692	MOSFET (Metal Oxide)	30V	15A (Tc)	4.5V, 10V	2.5V @ 250µA	23nC @ 10V	820pF @ 15V	±20V	-	2.5W (Ta), 4.5W (Tc)	12 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SQ7414AEN-T1_GE3	Vishay Siliconix	MOSFET N-CH 60V 5.6A PPAK 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock7,232	MOSFET (Metal Oxide)	60V	16A (Tc)	4.5V, 10V	2.5V @ 250µA	24nC @ 10V	980pF @ 30V	±20V	-	62W (Tc)	26 mOhm @ 5.7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SQS401EN-T1_GE3	Vishay Siliconix	MOSFET P-CH 40V 16A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1875pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 29 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock6,480	MOSFET (Metal Oxide)	40V	16A (Tc)	4.5V, 10V	2.5V @ 250µA	21.2nC @ 4.5V	1875pF @ 20V	±20V	-	62.5W (Tc)	29 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SISS27DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 50A PPAK 1212-8S FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8S (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,072	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2.2V @ 250µA	140nC @ 10V	5250pF @ 15V	±20V	-	4.8W (Ta), 57W (Tc)	5.6 mOhm @ 15A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8S (3.3x3.3)	8-PowerVDFN
IRLR014TRPBF	Vishay Siliconix	MOSFET N-CH 60V 7.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock350,808	MOSFET (Metal Oxide)	60V	7.7A (Tc)	4V, 5V	2V @ 250µA	8.4nC @ 5V	400pF @ 25V	±10V	-	2.5W (Ta), 25W (Tc)	200 mOhm @ 4.6A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SI4447DY-T1-GE3	Vishay Siliconix	MOSFET P-CH 40V 3.3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 15V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 72 mOhm @ 4.5A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock61,284	MOSFET (Metal Oxide)	40V	3.3A (Ta)	15V, 10V	2.2V @ 250µA	14nC @ 4.5V	805pF @ 20V	±16V	-	1.1W (Ta)	72 mOhm @ 4.5A, 15V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI3459BDV-T1-E3	Vishay Siliconix	MOSFET P-CH 60V 2.9A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Rds On (Max) @ Id, Vgs: 216 mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock2,022,696	MOSFET (Metal Oxide)	60V	2.9A (Tc)	4.5V, 10V	3V @ 250µA	12nC @ 10V	350pF @ 30V	±20V	-	2W (Ta), 3.3W (Tc)	216 mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SQS481ENW-T1_GE3	Vishay Siliconix	MOSFET P-CH 150V 4.7A 1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 385pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 1.095 Ohm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock5,344	MOSFET (Metal Oxide)	150V	4.7A (Tc)	10V	3.5V @ 250µA	11nC @ 10V	385pF @ 75V	±20V	-	62.5W (Tc)	1.095 Ohm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SI7772DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 35.6A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1084pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock36,972	MOSFET (Metal Oxide)	30V	35.6A (Tc)	4.5V, 10V	2.5V @ 250µA	28nC @ 10V	1084pF @ 15V	±20V	-	3.9W (Ta), 29.8W (Tc)	13 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SIS406DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 9A 1212-8 PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock2,484,372	MOSFET (Metal Oxide)	30V	9A (Ta)	4.5V, 10V	3V @ 250µA	28nC @ 10V	1100pF @ 15V	±25V	-	1.5W (Ta)	11 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SI8439DB-T1-E1	Vishay Siliconix	MOSFET P-CH 8V MICROFOOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-UFBGA	Package: 4-UFBGA	Stock5,600	MOSFET (Metal Oxide)	8V	-	1.2V, 4.5V	800mV @ 250µA	50nC @ 4.5V	-	±5V	-	1.1W (Ta), 2.7W (Tc)	25 mOhm @ 1.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-Microfoot	4-UFBGA
SI4134DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 846pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,249,932	MOSFET (Metal Oxide)	30V	14A (Tc)	4.5V, 10V	2.5V @ 250µA	23nC @ 10V	846pF @ 15V	±20V	-	2.5W (Ta), 5W (Tc)	14 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)