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Diodes Incorporated |
MOSFET 2P-CH 20V U-DFN2030-6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.7A
- Rds On (Max) @ Id, Vgs: 38 mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: U-DFN2030-6 (Type B)
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Package: 6-UFDFN Exposed Pad |
Stock24,690 |
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Standard | 20V | 5.7A | 38 mOhm @ 3.5A, 10V | 1.4V @ 250µA | 21.4nC @ 10V | 906pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | U-DFN2030-6 (Type B) |
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Diodes Incorporated |
MOSFET N/P-CH 30V SOT963
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
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Package: SOT-963 |
Stock78,582 |
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Logic Level Gate | 30V | 220mA, 200mA | 1.5 Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.38nC @ 4.5V | 22.6pF @ 15V | 350mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-963 | SOT-963 |
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Diodes Incorporated |
MOSFET 2N-CH 60V 0.35A
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 350mA
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V
- Power - Max: 320mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock116,616 |
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Standard | 60V | 350mA | 2 Ohm @ 50mA, 5V | 1V @ 250µA | 0.4nC @ 4.5V | 28.5pF @ 30V | 320mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Diodes Incorporated |
MOSFET 2P-CH 30V 8-MSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
- Power - Max: 1.04W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: 8-MSOP
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock180,384 |
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Logic Level Gate | 30V | - | 185 mOhm @ 1.2A, 10V | 1V @ 250µA (Min) | 7nC @ 10V | 270pF @ 25V | 1.04W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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Diodes Incorporated |
MOSFET 2N-CH 30V 2.9A DFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.9A
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
- Power - Max: 1.7W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-DFN (3x2)
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Package: 8-WDFN Exposed Pad |
Stock29,982 |
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Logic Level Gate | 30V | 2.9A | 120 mOhm @ 2.5A, 10V | 3V @ 250µA | 3.9nC @ 10V | 190pF @ 25V | 1.7W | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-DFN (3x2) |
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Diodes Incorporated |
MOSFET 2N-CH 40V 5.4A 8SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 5.4A
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock309,168 |
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Logic Level Gate | 40V | 5.4A | 27 mOhm @ 7A, 10V | 3V @ 250µA | 12.9nC @ 10V | 604pF @ 20V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Diodes Incorporated |
MOSFET 2N-CH 20V 12.2A DFN2050-4
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
- Power - Max: 2.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-VFDFN Exposed Pad
- Supplier Device Package: V-DFN2050-4
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Package: 4-VFDFN Exposed Pad |
Stock28,104 |
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Standard | 20V | 12.2A (Ta) | 9.5 mOhm @ 10A, 4.5V | 1V @ 250µA | 56nC @ 10V | 2248pF @ 10V | 2.1W | -55°C ~ 150°C (TJ) | Surface Mount | 4-VFDFN Exposed Pad | V-DFN2050-4 |
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Diodes Incorporated |
MOSFET 2N-CH 60V 0.115A SOT-363
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 115mA
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 115mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
- Power - Max: 250mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock48,958,512 |
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Logic Level Gate | 60V | 115mA | 5 Ohm @ 115mA, 10V | 2V @ 250µA | - | 23pF @ 25V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Diodes Incorporated |
MOSFET 2N-CH 20V 4.9A 8TSSOP
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.9A
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 841pF @ 10V
- Power - Max: 870mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock19,836 |
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Logic Level Gate | 20V | 4.9A | 25 mOhm @ 8.2A, 4.5V | 900mV @ 250µA | 9.6nC @ 4.5V | 841pF @ 10V | 870mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Diodes Incorporated |
MOSFET 2N-CH 20V 2.11A 6DFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.11A
- Rds On (Max) @ Id, Vgs: 195 mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 64.3pF @ 25V
- Power - Max: 530mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: X2-DFN1310-6
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Package: 6-XFDFN Exposed Pad |
Stock169,110 |
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Logic Level Gate | 20V | 2.11A | 195 mOhm @ 300mA, 4.5V | 950mV @ 250µA | 1.6nC @ 4.5V | 64.3pF @ 25V | 530mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFDFN Exposed Pad | X2-DFN1310-6 |
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Diodes Incorporated |
MOSFET 2N/2P-CH 100V 1A/0.8A SM8
- FET Type: 2 N and 2 P-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1A, 800mA
- Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-223-8
- Supplier Device Package: SM8
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Package: SOT-223-8 |
Stock28,740 |
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Standard | 100V | 1A, 800mA | 700 mOhm @ 1.5A, 10V | 4V @ 250µA | 2.9nC @ 10V | 138pF @ 60V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-8 | SM8 |
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Diodes Incorporated |
MOSFET 2P-CH 60V 2.9A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.9A
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
- Power - Max: 1.81W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock512,964 |
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Logic Level Gate | 60V | 2.9A | 85 mOhm @ 2.9A, 10V | 1V @ 250µA (Min) | 24.2nC @ 10V | 1021pF @ 30V | 1.81W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Diodes Incorporated |
MOSFET N/P-CH 30V 2.9A/2.1A 8DFN
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
- Power - Max: 1.7W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-DFN (3x2)
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Package: 8-WDFN Exposed Pad |
Stock42,000 |
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Logic Level Gate | 30V | 2.9A, 2.1A | 120 mOhm @ 2.5A, 10V | 3V @ 250µA | 3.9nC @ 10V | 190pF @ 25V | 1.7W | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-DFN (3x2) |
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Diodes Incorporated |
MOSFET N/P-CH 40V 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.8A
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock144,060 |
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Logic Level Gate | 40V | 6.5A, 4.8A | 28 mOhm @ 6A, 10V | 3V @ 250µA | 12.9nC @ 10V | 604pF @ 20V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2N-CH 40V 4.8A 8SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 4.8A
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,488 |
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Logic Level Gate | 40V | 4.8A | 34 mOhm @ 6A, 10V | 3V @ 250µA | 18nC @ 10V | 453pF @ 20V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Diodes Incorporated |
MOSFET N/P-CH 40V 5.3A 8SO
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 5.3A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock149,700 |
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Logic Level Gate | 40V | 5.3A | 45 mOhm @ 3A, 10V | 1.8V @ 250µA | 37.56nC @ 10V | 1790.8pF @ 20V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2N-CH 12V U-WLB1818-4
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.45W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-UFBGA, WLBGA
- Supplier Device Package: U-WLB1818-4
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Package: 4-UFBGA, WLBGA |
Stock28,668 |
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Logic Level Gate | - | - | - | - | 37nC @ 4.5V | - | 1.45W | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, WLBGA | U-WLB1818-4 |
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Diodes Incorporated |
MOSFET 2N-CH 40V 7A 8SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock144,360 |
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Logic Level Gate | 40V | 7A | 24 mOhm @ 6A, 10V | 3V @ 250µA | 19.1nC @ 10V | 1060pF @ 20V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2N-CH 40V 5.2A 8SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 5.2A
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
- Power - Max: 1.42W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock144,060 |
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Logic Level Gate | 40V | 5.2A | 31 mOhm @ 6A, 10V | 3V @ 250µA | 18.6nC @ 10V | 945pF @ 20V | 1.42W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET N/P-CH 12V/20V 6UDFN
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V, 20V
- Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
- Power - Max: 1.36W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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Package: 6-UDFN Exposed Pad |
Stock127,494 |
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Standard | 12V, 20V | 6A, 3.4A | 25 mOhm @ 5.2A, 4.5V | 1V @ 250µA | 18.5nC @ 8V | 787pF @ 6V | 1.36W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
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Diodes Incorporated |
MOSFET 2N-CH 20V 4.2A SOT-26
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.2A
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 10V
- Power - Max: 980mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
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Package: SOT-23-6 |
Stock3,840 |
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Logic Level Gate | 20V | 4.2A | 28 mOhm @ 8.2A, 4.5V | 900mV @ 250µA | 8.3nC @ 4.5V | 856pF @ 10V | 980mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 |
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Diodes Incorporated |
MOSFET 2N-CH 20V 6.7A 8TSSOP
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.7A
- Rds On (Max) @ Id, Vgs: 26 mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 10V
- Power - Max: 890mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock50,520 |
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Logic Level Gate | 20V | 6.7A | 26 mOhm @ 6A, 4.5V | 1.2V @ 250µA | 5.2nC @ 4.5V | 570pF @ 10V | 890mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Diodes Incorporated |
MOSFET N/P-CH 20V SOT-563
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 670mA, 530mA
- Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
- Power - Max: 450mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: SOT-563, SOT-666 |
Stock447,756 |
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Logic Level Gate | 20V | 670mA, 530mA | 550 mOhm @ 540mA, 4.5V | 1V @ 250µA | - | 150pF @ 16V | 450mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Diodes Incorporated |
MOSFET 2N-CH 24V 6.5A 6DFN
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 6.5A
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1066.4pF @ 15V
- Power - Max: 980mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VFDFN Exposed Pad
- Supplier Device Package: W-DFN5020-6
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Package: 6-VFDFN Exposed Pad |
Stock28,458 |
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Logic Level Gate | 24V | 6.5A | 15 mOhm @ 6.5A, 4.5V | 1.5V @ 250µA | 31.3nC @ 10V | 1066.4pF @ 15V | 980mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VFDFN Exposed Pad | W-DFN5020-6 |
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Diodes Incorporated |
MOSFET 2N-CH 20V 5.2A 8UDFN
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.2A
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1472pF @ 10V
- Power - Max: 770mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerUDFN
- Supplier Device Package: U-DFN3030-8
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Package: 8-PowerUDFN |
Stock25,908 |
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Logic Level Gate | 20V | 5.2A | 18 mOhm @ 6A, 4.5V | 1.1V @ 250µA | 16nC @ 4.5V | 1472pF @ 10V | 770mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerUDFN | U-DFN3030-8 |
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Diodes Incorporated |
MOSFET 2N-CH 12V 5.6A 6UDFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 5.6A
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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Package: 6-UDFN Exposed Pad |
Stock27,342 |
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Standard | 12V | 5.6A | 29 mOhm @ 5A, 4.5V | 1V @ 250µA | 19.6nC @ 8V | 914pF @ 6V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
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Diodes Incorporated |
MOSFET 2P-CH 50V 0.16A SOT563
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 160mA
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.58nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 50.54pF @ 25V
- Power - Max: 400mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: SOT-563, SOT-666 |
Stock45,492 |
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Logic Level Gate | 50V | 160mA | 6 Ohm @ 100mA, 4V | 1.2V @ 250µA | 0.58nC @ 4V | 50.54pF @ 25V | 400mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Diodes Incorporated |
MOSFET 2N/2P-CH 30V 2.7A/2A SM8
- FET Type: 2 N and 2 P-Channel (H-Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-223-8
- Supplier Device Package: SM8
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Package: SOT-223-8 |
Stock442,104 |
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Logic Level Gate | 30V | 2.7A, 2A | 120 mOhm @ 2.5A, 10V | 3V @ 250µA | 3.9nC @ 10V | 190pF @ 25V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-8 | SM8 |