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Diodes Incorporated |
MOSFET N/P-CH 40V 5.3A 8SO
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 5.3A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,376 |
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Standard | 40V | 5.3A | 45 mOhm @ 3A, 10V | 1.8V @ 250µA | 37.56nC @ 10V | 1790.8pF @ 20V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET N/P-CH 30V 8SOIC
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
- Power - Max: 1.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,056 |
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Standard | 30V | 5.5A, 5.8A | 27 mOhm @ 6A, 10V | 3V @ 250µA | 13.2nC @ 5V | 641pF @ 15V | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2N-CH 60V 2A SOT-223-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Power - Max: 3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-223-8
- Supplier Device Package: SM8
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Package: SOT-223-8 |
Stock19,950 |
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Standard | 60V | 2A | 330 mOhm @ 3A, 10V | 3V @ 1mA | - | 350pF @ 25V | 3W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-8 | SM8 |
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Diodes Incorporated |
MOSFET 2N-CH 60V 2A SOT-223-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Power - Max: 3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-223-8
- Supplier Device Package: SOT-223
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Package: SOT-223-8 |
Stock3,200 |
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Standard | 60V | 2A | 330 mOhm @ 3A, 10V | 3V @ 1mA | - | 350pF @ 25V | 3W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-8 | SOT-223 |
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Diodes Incorporated |
MOSFET 2N-CH 20V 10A 6-DFN
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10A
- Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 8.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57.4nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 2607pF @ 10V
- Power - Max: 780mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VFDFN Exposed Pad
- Supplier Device Package: W-DFN5020-6
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Package: 6-VFDFN Exposed Pad |
Stock3,472 |
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Logic Level Gate | 20V | 10A | 11.5 mOhm @ 8.5A, 4.5V | 1.1V @ 250µA | 57.4nC @ 8V | 2607pF @ 10V | 780mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VFDFN Exposed Pad | W-DFN5020-6 |
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Diodes Incorporated |
MOSFET 2P-CH 30V 4.4A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.4A
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 336pF @ 25V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock578,628 |
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Logic Level Gate | 30V | 4.4A | 65 mOhm @ 5A, 10V | 2.1V @ 250µA | 7.8nC @ 10V | 336pF @ 25V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Diodes Incorporated |
MOSFET 2N-CH 30V 8.4A 8SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
- Power - Max: 1.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,480 |
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Standard | 30V | 8.4A (Ta) | 15 mOhm @ 12A, 10V | 2.5V @ 250µA | 25.1nC @ 10V | 1415pF @ 15V | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET N/P-CH 12V POWERDI5060
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V, 20V
- Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V
- Power - Max: 2.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8
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Package: 8-PowerTDFN |
Stock2,352 |
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Standard | 12V, 20V | 9.5A, 6.9A | 17 mOhm @ 11.8A, 4.5V | 1.5V @ 250µA | 30.4nC @ 8V | 1525pF @ 6V | 2.3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 |
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Diodes Incorporated |
MOSFET 2N-CH 30V 8A/6A 8SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A, 6A
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1276pF @ 15V
- Power - Max: 1.19W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,616 |
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Logic Level Gate | 30V | 8A, 6A | 12 mOhm @ 9.5A, 10V | 2.5V @ 250µA | 30.6nC @ 10V | 1276pF @ 15V | 1.19W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Diodes Incorporated |
MOSFET 2N-CHA 20V 14.5A DFN2030
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 14.5A
- Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 5.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250A
- Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: U-DFN2030-6 (Type B)
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Package: 6-UFDFN Exposed Pad |
Stock3,264 |
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Standard | 20V | 14.5A | 5.4 mOhm @ 5.5A, 4.5V | 1.5V @ 250A | 42.3nC @ 10V | 1418pF @ 10V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | U-DFN2030-6 (Type B) |
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Diodes Incorporated |
MOSFET 2N-CH X1-WLB1818-4
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.45W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-XFBGA, WLBGA
- Supplier Device Package: X1-WLB1818-4
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Package: 4-XFBGA, WLBGA |
Stock6,528 |
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Logic Level Gate | - | - | - | - | 29nC @ 4.5V | - | 1.45W | -55°C ~ 150°C (TJ) | Surface Mount | 4-XFBGA, WLBGA | X1-WLB1818-4 |
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Diodes Incorporated |
MOSFET 2N-CH 30V 9.5A 8SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.5A
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
- Power - Max: 1.19W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock60,000 |
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Logic Level Gate | 30V | 9.5A | 15 mOhm @ 9A, 10V | 2.4V @ 250µA | 42nC @ 10V | 1932pF @ 15V | 1.19W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2P-CH 20V 6.04A 8TSSOP
- FET Type: 2 P-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.04A
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V
- Power - Max: 890mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock6,592 |
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Logic Level Gate | 20V | 6.04A | 35 mOhm @ 4A, 4.5V | 1V @ 250µA | 15.4nC @ 4.5V | 1610pF @ 10V | 890mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Diodes Incorporated |
MOSFET N/P-CH 12V 9.5A/6.9A SMD
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1787pF @ 6V
- Power - Max: 2.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8
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Package: 8-PowerTDFN |
Stock60,000 |
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Standard | 12V | 9.5A, 6.9A | 17 mOhm @ 11.8A, 4.5V | 1.5V @ 250µA | 35.4nC @ 10V | 1787pF @ 6V | 2.3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 |
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Diodes Incorporated |
MOSFET N/P-CH 30V 8.5A/7A 8-SO
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,472 |
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Logic Level Gate | 30V | 8.5A, 7A | 21 mOhm @ 7A, 10V | 2.1V @ 250µA | 16.1nC @ 10V | 767pF @ 10V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET N/P-CH 30V 8.2A/6.2A 8SO
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.2A, 6.2A
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
- Power - Max: 1.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,480 |
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Logic Level Gate | 30V | 8.2A, 6.2A | 16 mOhm @ 12A, 10V | 2.3V @ 250µA | 25.1nC @ 10V | 1415pF @ 15V | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2N-CH 30V 7.3A 8VDFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.3A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: V-DFN3030-8 (Type J)
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Package: 8-PowerWDFN |
Stock4,608 |
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Logic Level Gate | 30V | 7.3A | 20 mOhm @ 11A, 10V | 2V @ 250µA | 25.1nC @ 10V | 1415pF @ 15V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | V-DFN3030-8 (Type J) |
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Diodes Incorporated |
MOSFET N/P-CH 30V 6.5A/6.2A 8SO
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.5A, 6.2A
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
- Power - Max: 1.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,008 |
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Logic Level Gate | 30V | 6.5A, 6.2A | 25 mOhm @ 6A, 10V | 3V @ 250µA | 13.2nC @ 10V | 641pF @ 15V | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2N-CH 20V 5.4A TSSOP-8
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.4A
- Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
- Power - Max: 780mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock2,032 |
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Logic Level Gate | 20V | 5.4A | 18.5 mOhm @ 7A, 10V | 950mV @ 250µA | 8.8nC @ 4.5V | 143pF @ 10V | 780mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Diodes Incorporated |
MOSFET 2N-CH 20V 7.5A UDFN2030-6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.5A
- Rds On (Max) @ Id, Vgs: 20.2 mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: U-DFN2030-6 (Type B)
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Package: 6-UFDFN Exposed Pad |
Stock6,896 |
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Standard | 20V | 7.5A | 20.2 mOhm @ 4.5A, 4.5V | 1V @ 250µA | 18.4nC @ 8V | 887pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | U-DFN2030-6 (Type B) |
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Diodes Incorporated |
MOSFET 2N-CH 60V 0.63A TSOT26
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 630mA
- Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
- Power - Max: 820mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock3,904 |
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Logic Level Gate | 60V | 630mA | 1.8 Ohm @ 150mA, 5V | 2V @ 1mA | 0.74nC @ 5V | 12.9pF @ 12V | 820mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 |
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Diodes Incorporated |
MOSFET N/P-CHA 30V 1.1A DFN1310
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA
- Rds On (Max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V
- Power - Max: 390mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN
- Supplier Device Package: X2-DFN1310-6
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Package: 6-XFDFN |
Stock6,048 |
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Standard | 30V | 1.1A, 700mA | 460 mOhm @ 200mA, 4.5V | 950mV @ 250µA | 0.9nC @ 4.5V | 65.9pF @ 25V | 390mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFDFN | X2-DFN1310-6 |
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Diodes Incorporated |
MOSFET 2N-CH 30V 5.5A 8VDFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.5A
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V
- Power - Max: 770mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: V-DFN3020-8
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Package: 8-PowerVDFN |
Stock3,296 |
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Standard | 30V | 5.5A | 35 mOhm @ 4.8A, 10V | 2V @ 250µA | 9.9nC @ 10V | 399pF @ 15V | 770mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | V-DFN3020-8 |
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Diodes Incorporated |
MOSFET 2N-CH 60V 0.63A TSOT26
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 630mA
- Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
- Power - Max: 820mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock5,824 |
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Logic Level Gate | 60V | 630mA | 1.8 Ohm @ 150mA, 5V | 2V @ 1mA | 0.74nC @ 5V | 12.9pF @ 12V | 820mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 |
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Diodes Incorporated |
MOSFET 2N-CH 60V 0.63A TSOT26
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 630mA
- Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
- Power - Max: 820mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock5,616 |
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Logic Level Gate | 60V | 630mA | 1.8 Ohm @ 150mA, 5V | 2V @ 1mA | 0.74nC @ 5V | 12.9pF @ 12V | 820mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 |
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Diodes Incorporated |
MOSFET 2P-CH 20V 0.2A SOT-963
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 200mA
- Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1.15V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 27.44pF @ 15V
- Power - Max: 330mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
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Package: SOT-963 |
Stock44,640 |
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Logic Level Gate | 20V | 200mA | 5.5 Ohm @ 100mA, 4.5V | 1.15V @ 250µA | - | 27.44pF @ 15V | 330mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-963 | SOT-963 |
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Diodes Incorporated |
MOSFET 2N-CH 50V 0.28A SOT-563
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 280mA
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: 250mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: SOT-563, SOT-666 |
Stock36,000 |
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Logic Level Gate | 50V | 280mA | 2 Ohm @ 50mA, 5V | 1V @ 250µA | - | 50pF @ 25V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Diodes Incorporated |
MOSFET 2N-CHA 12V 2A DFN1310
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V
- Power - Max: 390mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,752 |
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Standard | 12V | 2A | 150 mOhm @ 1A, 4.5V | 1V @ 250µA | 1.4nC @ 4.5V | 115pF @ 6V | 390mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |