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Fairchild/ON Semiconductor |
DIODE SCHOTTKY 60V 3A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 740mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 60V
- Capacitance @ Vr, F: 180pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-201AD, Axial |
Stock1,818,384 |
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60V | 3A | 740mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 180pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 125°C |
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Fairchild/ON Semiconductor |
DIODE SCHOTTKY 50V 3A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 740mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 50V
- Capacitance @ Vr, F: 180pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-201AD, Axial |
Stock13,356 |
|
50V | 3A | 740mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | 180pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 125°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 400V 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-214AA, SMB |
Stock4,787,268 |
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400V | 2A | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE SCHOTTKY 20V 3A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 20V
- Capacitance @ Vr, F: 180pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-201AD, Axial |
Stock13,200 |
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20V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 180pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 125°C |
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Fairchild/ON Semiconductor |
DIODE SCHOTTKY 40V 3A SOD123HE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 520mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 12.37ns
- Current - Reverse Leakage @ Vr: 160µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123H
- Supplier Device Package: SOD-123HE
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SOD-123H |
Stock3,856 |
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40V | 3A | 520mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 12.37ns | 160µA @ 40V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE SCHOTTKY 20V 2A DO214AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-214AA, SMB |
Stock6,373,368 |
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20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 125°C |
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Fairchild/ON Semiconductor |
DIODE GP 1KV 800MA SOD123FA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 800mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123FA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SOD-123W |
Stock6,544 |
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1000V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 10pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD-123FA | -55°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE SCHOTTKY 30V 200MA SOT523
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 2µA @ 25V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523
- Operating Temperature - Junction: 125°C (Max)
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Package: SOT-523 |
Stock216,000 |
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30V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | SOT-523 | SOT-523 | 125°C (Max) |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 200V 200MA SOT23
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100nA @ 175V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock695,976 |
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200V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 175V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 1.5A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AC, DO-15, Axial |
Stock5,216 |
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600V | 1.5A | 1.4V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 25pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 200V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 12pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock143,760 |
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200V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 12pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -50°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 150V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 1mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 120ns
- Current - Reverse Leakage @ Vr: 100nA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-204AH, DO-35, Axial |
Stock60,000 |
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150V | 200mA | 650mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | 120ns | 100nA @ 150V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 200V 500MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25nA @ 175V
- Capacitance @ Vr, F: 6pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-204AH, DO-35, Axial |
Stock85,158 |
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200V | 500mA | 1V @ 100mA | Standard Recovery >500ns, > 200mA (Io) | - | 25nA @ 175V | 6pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 100V 200MA LL34
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 20mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: SOD-80
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-213AC, MINI-MELF, SOD-80 |
Stock3,312 |
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100V | 200mA | 1V @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 | 175°C (Max) |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 100V 200MA LL34
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: SOD-80
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-213AC, MINI-MELF, SOD-80 |
Stock5,392 |
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100V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 | 175°C (Max) |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 150°C (Max)
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Package: DO-204AH, DO-35, Axial |
Stock7,632 |
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100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 150°C (Max) |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-204AH, DO-35, Axial |
Stock6,976 |
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100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock300,000 |
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100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 8A TO220
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 3.6V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-220-2 |
Stock6,224 |
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600V | 8A | 3.6V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 350V 40A TO3P
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 350V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 40A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 55ns
- Current - Reverse Leakage @ Vr: 100µA @ 350V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-3P-3, SC-65-3 |
Stock9,948 |
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350V | 40A | 1.6V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 100µA @ 350V | - | Through Hole | TO-3P-3, SC-65-3 | TO-3P | -65°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 15A TO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.2V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-247-2 |
Stock4,672 |
|
600V | 15A | 2.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-220-2 |
Stock7,404 |
|
600V | 8A | 2.1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 70ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: TO-220-2 |
Stock19,908 |
|
600V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2L | -65°C ~ 175°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 15A D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock18,000 |
|
600V | 15A | 1.5V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 100µA @ 600V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263-3 | -55°C ~ 175°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 8A TO220-2L
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 3.4V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 32ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: TO-220-2 |
Stock7,520 |
|
600V | 8A | 3.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 32ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2L | -65°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 8A TO220-2L
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: TO-220-2 |
Stock6,656 |
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600V | 8A | 2.1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2L | -65°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 200V 10A TO220F
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 100µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F-2L
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-220-2 Full Pack |
Stock24,180 |
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200V | 10A | 1.15V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 200V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 8A TO220F
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 3.4V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F-2L
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-220-2 Full Pack |
Stock9,816 |
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600V | 8A | 3.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |