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Fairchild/ON Semiconductor |
DIODE GEN PURP 200V 4A DPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 100µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock59,544 |
|
200V | 4A | 1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -65°C ~ 175°C |
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Fairchild/ON Semiconductor |
DIODE SCHOTTKY 60V 10A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: TO-220-2 |
Stock117,216 |
|
60V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Through Hole | TO-220-2 | TO-220-2L | -65°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 400V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-201AD, Axial |
Stock784,800 |
|
400V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | 30pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE SCHOTTKY 150V 2A SOD123FA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 150V
- Capacitance @ Vr, F: 120pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123FA
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: SOD-123W |
Stock4,240 |
|
150V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | 120pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD-123FA | -55°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE SCHOTTKY 60V 1A SOD123HE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400µA @ 60V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123H
- Supplier Device Package: SOD-123HE
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: SOD-123H |
Stock3,360 |
|
60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 60V | 80pF @ 4V, 1MHz | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 100V 200MA SOD123
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: 150°C (Max)
|
Package: SOD-123 |
Stock2,688 |
|
100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | 150°C (Max) |
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Fairchild/ON Semiconductor |
DIODE RECT SCHOTKY 40V 5A TO277
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250µA @ 40V
- Capacitance @ Vr, F: 730pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277-3
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: TO-277, 3-PowerDFN |
Stock5,152 |
|
40V | 5A | 520mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 40V | 730pF @ 0V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 1A SOD123FA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123FA
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: SOD-123W |
Stock7,792 |
|
600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | 15pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD-123FA | -55°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 30A TO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45ns
- Current - Reverse Leakage @ Vr: 250µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: TO-247-2 |
Stock103,632 |
|
600V | 30A | 2.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 60A TO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 80ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: TO-247-2 |
Stock133,944 |
|
600V | 60A | 1.7V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 150°C |
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|
Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 15A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.2V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: TO-220-2 |
Stock10,344 |
|
600V | 15A | 2.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
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|
Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 15A TO220-2L
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.6V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: -
|
Package: TO-220-2 |
Stock12,372 |
|
600V | 15A | 2.6V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2L | - |
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|
Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: TO-220-2 |
Stock87,564 |
|
600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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|
Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 8A TO220F
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 2.6V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F-2L
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: TO-220-2 Full Pack |
Stock80,484 |
|
600V | 8A | 2.6V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 175°C |
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|
Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 8A TO263-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock17,532 |
|
600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 100µA @ 600V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -55°C ~ 175°C |
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|
Fairchild/ON Semiconductor |
DIODE GEN PURP 80V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25nA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 175°C (Max)
|
Package: DO-204AH, DO-35, Axial |
Stock4,880 |
|
80V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 60V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
|
|
Fairchild/ON Semiconductor |
DIODE GEN PURP 150V 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20ns
- Current - Reverse Leakage @ Vr: 10µA @ 150V
- Capacitance @ Vr, F: 18pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-214AA, SMB |
Stock1,658,400 |
|
150V | 2A | 900mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 150V | 18pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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|
Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 80A TO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 80A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 80A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 85ns
- Current - Reverse Leakage @ Vr: 250µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: TO-247-2 |
Stock172,896 |
|
600V | 80A | 1.6V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
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|
Fairchild/ON Semiconductor |
DIODE GEN PURP 1.2KV 75A TO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 75A
- Voltage - Forward (Vf) (Max) @ If: 3.2V @ 75A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100ns
- Current - Reverse Leakage @ Vr: 250µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: TO-247-2 |
Stock436,956 |
|
1200V | 75A | 3.2V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 250µA @ 1200V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
|
|
Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 50A TO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 250µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: TO-247-2 |
Stock38,292 |
|
600V | 50A | 1.6V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
|
|
Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 30A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45ns
- Current - Reverse Leakage @ Vr: 250µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: TO-220-2 |
Stock72,012 |
|
600V | 30A | 2.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 250µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2L | -65°C ~ 175°C |
|
|
Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 15A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: TO-220-2 |
Stock117,780 |
|
600V | 15A | 1.5V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
|
|
Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 30A TO220-2L
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.6V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: TO-220-2 |
Stock12,396 |
|
600V | 30A | 2.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2L | -65°C ~ 150°C |
|
|
Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 10A TO220F
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 2.2V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 58ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F-2L
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: TO-220-2 Full Pack |
Stock187,740 |
|
600V | 10A | 2.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 58ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |
|
|
Fairchild/ON Semiconductor |
DIODE GEN PURP 1.5KV 10A TO220F
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1500V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 170ns
- Current - Reverse Leakage @ Vr: 10µA @ 1500V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F-2L
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: TO-220-2 Full Pack |
Stock182,880 |
|
1500V | 10A | 1.6V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 170ns | 10µA @ 1500V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |
|
|
Fairchild/ON Semiconductor |
DIODE GEN PURP 200V 20A D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45ns
- Current - Reverse Leakage @ Vr: 100µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock74,604 |
|
200V | 20A | 1.15V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 100µA @ 200V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 150°C |
|
|
Fairchild/ON Semiconductor |
DIODE SCHOTTKY 45V 10A TO277-3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 440mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 220µA @ 45V
- Capacitance @ Vr, F: 820pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277-3
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-277, 3-PowerDFN |
Stock3,328 |
|
45V | 10A | 440mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 220µA @ 45V | 820pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 150°C |
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|
Fairchild/ON Semiconductor |
DIODE SCHOTTKY 120V 12A TO277-3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 790mV @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25µA @ 120V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277-3
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: TO-277, 3-PowerDFN |
Stock3,440 |
|
120V | 12A | 790mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 25µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 150°C |