Page 3 - Fairchild/ON Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased

FJV3107RMTF
Fairchild/ON Semiconductor

TRANS PREBIAS NPN 200MW SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock7,680
FJV3109RMTF
Fairchild/ON Semiconductor

TRANS PREBIAS NPN 200MW SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock5,184
FJV3111RMTF
Fairchild/ON Semiconductor

TRANS PREBIAS NPN 200MW SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock4,784
FJV3112RMTF
Fairchild/ON Semiconductor

TRANS PREBIAS NPN 200MW SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock4,400
FJV3106RMTF
Fairchild/ON Semiconductor

TRANS PREBIAS NPN 200MW SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock7,456
FJN4304RTA
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock4,256
FJN4301RBU
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock2,672
FJN4305RBU
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock6,512
FJN3306RTA
Fairchild/ON Semiconductor

TRANS PREBIAS NPN 300MW TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock6,288
FJN4306RBU
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock3,216
FJN4307RBU
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock7,920
FJN4303RBU
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock5,504
FJN4304RBU
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock2,400
FJN4306RTA
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock3,296
FJN4313RTA
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock2,784
FJN4310RBU
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock2,736
FJN4308RTA
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock4,528
FJN3302RBU
Fairchild/ON Semiconductor

TRANS PREBIAS NPN 300MW TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock3,536
FJN4307RTA
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock6,816
FJN4308RBU
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock2,592

Part Number	Manufacturer	Description	Package	Stock	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
FJV3107RMTF	Fairchild/ON Semiconductor	TRANS PREBIAS NPN 200MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	Package: TO-236-3, SC-59, SOT-23-3	Stock7,680	100mA	50V	22k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
FJV3109RMTF	Fairchild/ON Semiconductor	TRANS PREBIAS NPN 200MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 40V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	Package: TO-236-3, SC-59, SOT-23-3	Stock5,184	100mA	40V	4.7k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	100nA (ICBO)	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
FJV3111RMTF	Fairchild/ON Semiconductor	TRANS PREBIAS NPN 200MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 40V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	Package: TO-236-3, SC-59, SOT-23-3	Stock4,784	100mA	40V	22k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	100nA (ICBO)	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
FJV3112RMTF	Fairchild/ON Semiconductor	TRANS PREBIAS NPN 200MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 40V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	Package: TO-236-3, SC-59, SOT-23-3	Stock4,400	100mA	40V	47k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	100nA (ICBO)	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
FJV3106RMTF	Fairchild/ON Semiconductor	TRANS PREBIAS NPN 200MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	Package: TO-236-3, SC-59, SOT-23-3	Stock7,456	100mA	50V	10k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
FJN4304RTA	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock4,256	100mA	50V	47k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
FJN4301RBU	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock2,672	100mA	50V	4.7k	4.7k	20 @ 10mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJN4305RBU	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock6,512	100mA	50V	4.7k	10k	30 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJN3306RTA	Fairchild/ON Semiconductor	TRANS PREBIAS NPN 300MW TO92-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock6,288	100mA	50V	10k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	250MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
FJN4306RBU	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock3,216	100mA	50V	10k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJN4307RBU	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock7,920	100mA	50V	22k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJN4303RBU	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock5,504	100mA	50V	22k	22k	56 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJN4304RBU	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock2,400	100mA	50V	47k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJN4306RTA	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock3,296	100mA	50V	10k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
FJN4313RTA	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock2,784	100mA	50V	2.2k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
FJN4310RBU	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 40V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock2,736	100mA	40V	10k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJN4308RTA	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock4,528	100mA	50V	47k	22k	56 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
FJN3302RBU	Fairchild/ON Semiconductor	TRANS PREBIAS NPN 300MW TO92-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock3,536	100mA	50V	10k	10k	30 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	250MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJN4307RTA	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock6,816	100mA	50V	22k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
FJN4308RBU	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock2,592	100mA	50V	47k	22k	56 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJN4314RBU	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock5,600	100mA	50V	4.7k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJN4312RBU	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 40V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock2,160	100mA	40V	47k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJN4313RBU	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock3,328	100mA	50V	2.2k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJN4311RTA	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 40V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock3,216	100mA	40V	22k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
FJN3315RTA	Fairchild/ON Semiconductor	TRANS PREBIAS NPN 300MW TO92-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock6,320	100mA	50V	2.2k	10k	33 @ 10mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	250MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
FJN4311RBU	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 40V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock7,968	100mA	40V	22k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJN4312RTA	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 40V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock5,536	100mA	40V	47k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
FJN4302RBU	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock3,392	100mA	50V	10k	10k	30 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3