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Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 300MW TO92S
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body |
Stock3,856 |
|
100mA | 50V | 10k | 47k | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body | TO-92S |
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Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 300MW TO92S
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock6,688 |
|
100mA | 40V | 10k | - | 100 @ 1mA, 5V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 200MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
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Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 300MW TO92S
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock4,528 |
|
100mA | 50V | 2.2k | 47k | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
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Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 300MW TO92S
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock6,992 |
|
100mA | 50V | 47k | 22k | 56 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
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Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 300MW TO92S
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body |
Stock2,080 |
|
100mA | 50V | 2.2k | 47k | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body | TO-92S |
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Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 300MW TO92S
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body |
Stock7,008 |
|
100mA | 40V | 47k | - | 100 @ 1mA, 5V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 200MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body | TO-92S |
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Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 300MW TO92S
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock3,520 |
|
100mA | 50V | 22k | 47k | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
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Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 300MW TO92S
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock4,304 |
|
100mA | 50V | 10k | 10k | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
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Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 300MW TO92S
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock6,928 |
|
100mA | 40V | 22k | - | 100 @ 1mA, 5V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 200MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
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|
Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 300MW TO92S
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock3,072 |
|
100mA | 50V | 4.7k | 4.7k | 20 @ 10mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
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|
Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 300MW TO92S
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock4,704 |
|
100mA | 50V | 4.7k | 10k | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
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|
Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 300MW TO92S
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body |
Stock3,792 |
|
100mA | 50V | 4.7k | 10k | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body | TO-92S |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 300MW TO92S
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body |
Stock7,792 |
|
100mA | 40V | 10k | - | 100 @ 1mA, 5V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 200MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body | TO-92S |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 300MW TO92S
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock6,528 |
|
100mA | 40V | 47k | - | 100 @ 1mA, 5V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 200MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 300MW TO92S
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body |
Stock3,504 |
|
100mA | 50V | 4.7k | 47k | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body | TO-92S |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 300MW TO92S
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock4,048 |
|
100mA | 50V | 4.7k | 47k | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 200MW SOT23-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,312 |
|
100mA | 40V | 10k | - | 100 @ 1mA, 5V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 200MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 200MW SOT23-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,976 |
|
100mA | 50V | 47k | 22k | 56 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 200MW SOT23-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock72,000 |
|
100mA | 40V | 4.7k | - | 100 @ 1mA, 5V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 200MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 200MW SOT23-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,784 |
|
100mA | 50V | 4.7k | 10k | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 200MW SOT23-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,176 |
|
100mA | 40V | 22k | - | 100 @ 1mA, 5V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 200MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 200MW SOT23-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock324,000 |
|
100mA | 50V | 22k | 22k | 56 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 200MW SOT23-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,024 |
|
100mA | 50V | 22k | 47k | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 200MW SOT23-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,288 |
|
100mA | 50V | 10k | 47k | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 200MW SOT23-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,024 |
|
100mA | 40V | 47k | - | 100 @ 1mA, 5V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 200MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS NPN 300MW TO92S
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock7,888 |
|
100mA | 50V | 4.7k | 10k | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 250MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS NPN 300MW TO92S
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock3,536 |
|
100mA | 50V | 2.2k | 47k | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 250MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS NPN 300MW TO92S
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock2,464 |
|
100mA | 50V | 10k | 47k | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 250MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |