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Fairchild/ON Semiconductor |
MOSFET 2P-CH 20V 0.5A SC70-6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 500mA
- Rds On (Max) @ Id, Vgs: 780 mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.62nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 85.4pF @ 10V
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock285,048 |
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Logic Level Gate | 20V | 500mA | 780 mOhm @ 500mA, 4.5V | 1.5V @ 250µA | 1.62nC @ 4.5V | 85.4pF @ 10V | 300mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 100V
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 10.4A
- Rds On (Max) @ Id, Vgs: 9.9 mOhm @ 10.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 50V
- Power - Max: 2.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-Power 5x6
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Package: 8-PowerWDFN |
Stock23,880 |
|
Standard | 100V | 10.4A | 9.9 mOhm @ 10.4A, 10V | 4V @ 250µA | 31nC @ 10V | 2230pF @ 50V | 2.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-Power 5x6 |
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Fairchild/ON Semiconductor |
MOSFET 2N/2P-CH 100V/80V 12-MLP
- FET Type: 2 N and 2 P-Channel (H-Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V, 80V
- Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 12-WDFN Exposed Pad
- Supplier Device Package: 12-MLP (5x4.5)
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Package: 12-WDFN Exposed Pad |
Stock21,918 |
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Logic Level Gate | 100V, 80V | 3.4A, 2.6A | 110 mOhm @ 3A, 10V | 4V @ 250µA | 5nC @ 10V | 210pF @ 50V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 12-WDFN Exposed Pad | 12-MLP (5x4.5) |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 13A/26A 3.3MM
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A, 26A
- Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 15V
- Power - Max: 800mW, 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: Powerclip-33
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Package: 8-PowerWDFN |
Stock28,254 |
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Logic Level Gate | 30V | 13A, 26A | 6.4 mOhm @ 13A, 10V | 3V @ 250µA | 13nC @ 10V | 827pF @ 15V | 800mW, 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | Powerclip-33 |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 100V 4.5A 8-SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 62 mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,136 |
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Standard | 100V | 4.5A | 62 mOhm @ 4.5A, 10V | 4V @ 250µA | 15nC @ 10V | 750pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 25V 17.5A/30A 8PQFN
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: Power56
|
Package: 8-PowerTDFN |
Stock262,578 |
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Logic Level Gate | 25V | 17.5A, 30A | 5 mOhm @ 17.5A, 10V | 2V @ 250µA | 26nC @ 10V | 1570pF @ 13V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | Power56 |
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Fairchild/ON Semiconductor |
MOSFET 2P-CH MLP2X3
- FET Type: 2 P-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V
- Power - Max: 800mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-MLP (2x3)
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Package: 6-WDFN Exposed Pad |
Stock44,232 |
|
Logic Level Gate | - | - | 36 mOhm @ 5.7A, 4.5V | 1.5V @ 250µA | 30nC @ 10V | 3030pF @ 10V | 800mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-MLP (2x3) |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 100V 3.5A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 3.5A
- Rds On (Max) @ Id, Vgs: 62 mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V
- Power - Max: 1.6W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock20,046 |
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Logic Level Gate | 100V | 3.5A | 62 mOhm @ 3.5A, 10V | 4V @ 250µA | 7.1nC @ 10V | 398pF @ 50V | 1.6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 30V 6A 8SOIC
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock33,324 |
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Standard | 30V | 6A | 28 mOhm @ 6A, 10V | 3V @ 250µA | 13nC @ 5V | 830pF @ 15V | 1W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 60V 3.5A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.5A
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock270,228 |
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Logic Level Gate | 60V | 3.5A | 100 mOhm @ 3.5A, 10V | 3V @ 250µA | 30nC @ 10V | 345pF @ 25V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 20V 9.4A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 9.4A
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock107,844 |
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Logic Level Gate | 20V | 9.4A | 14 mOhm @ 9.4A, 4.5V | 1.5V @ 250µA | 23nC @ 4.5V | 1821pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 20V 9.4A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 9.4A
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock96,732 |
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Logic Level Gate | 20V | 9.4A | 14 mOhm @ 9.4A, 4.5V | 1.5V @ 250µA | 23nC @ 4.5V | 1821pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 30V 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.9A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock476,688 |
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Logic Level Gate | 30V | 3.7A, 2.9A | 80 mOhm @ 1A, 10V | 2.8V @ 250µA | 25nC @ 10V | 320pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 20V 6.5A/5A 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.5A, 5A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock152,292 |
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Logic Level Gate | 20V | 6.5A, 5A | 30 mOhm @ 6.5A, 4.5V | 1.5V @ 250µA | 9nC @ 4.5V | 650pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 7.5A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.5A
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 15V
- Power - Max: 1.6W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock137,412 |
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Logic Level Gate | 30V | 7.5A | 18 mOhm @ 7.5A, 10V | 2.5V @ 250µA | 26nC @ 10V | 1270pF @ 15V | 1.6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 30V 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A
- Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock325,848 |
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Logic Level Gate | 30V | 6.4A, 4.5A | 26 mOhm @ 6.4A, 10V | 3V @ 250µA | 12nC @ 10V | 540pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 5.5A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.5A
- Rds On (Max) @ Id, Vgs: 38 mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock149,940 |
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Logic Level Gate | 30V | 5.5A | 38 mOhm @ 5.5A, 10V | 3V @ 250µA | 3.8nC @ 5V | 412pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 3.8A 6MICROFET
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.8A
- Rds On (Max) @ Id, Vgs: 68 mOhm @ 3.8A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 15V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VDFN Exposed Pad
- Supplier Device Package: 6-MicroFET (2x2)
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Package: 6-VDFN Exposed Pad |
Stock435,192 |
|
Logic Level Gate | 30V | 3.8A | 68 mOhm @ 3.8A, 4.5V | 1.5V @ 250µA | 5.2nC @ 5V | 375pF @ 15V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) |
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Fairchild/ON Semiconductor |
MOSFET 2P-CH 20V 3.6A 6MICROFET
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.6A
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 10V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: 6-MicroFET (2x2)
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Package: 6-UDFN Exposed Pad |
Stock13,428 |
|
Logic Level Gate | 20V | 3.6A | 60 mOhm @ 3.6A, 4.5V | 1.5V @ 250µA | 17nC @ 4.5V | 885pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-MicroFET (2x2) |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 25V 7A 8-MLP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 13V
- Power - Max: 800mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-MLP, MicroFET (3x1.9)
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Package: 8-PowerWDFN |
Stock75,120 |
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Logic Level Gate | 25V | 7A | 23 mOhm @ 7A, 10V | 3V @ 250µA | 17nC @ 10V | 890pF @ 13V | 800mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-MLP, MicroFET (3x1.9) |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 25V SSOT-6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 680mA, 460mA
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SuperSOT?-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock790,776 |
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Logic Level Gate | 25V | 680mA, 460mA | 450 mOhm @ 500mA, 4.5V | 1.5V @ 250µA | 2.3nC @ 5V | 50pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT?-6 |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 25V SSOT6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 220mA, 120mA
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-SSOT
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock432,000 |
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Logic Level Gate | 25V | 220mA, 120mA | 4 Ohm @ 400mA, 4.5V | 1.5V @ 250µA | 0.4nC @ 4.5V | 9.5pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-SSOT |
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|
Fairchild/ON Semiconductor |
MOSFET 2P-CH 25V 0.41A SC70-6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 410mA
- Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 410mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock3,579,360 |
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Logic Level Gate | 25V | 410mA | 1.1 Ohm @ 410mA, 4.5V | 1.5V @ 250µA | 1.5nC @ 4.5V | 62pF @ 10V | 300mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 |
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|
Fairchild/ON Semiconductor |
MOSFET 2P-CH 60V 0.34A SSOT6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 340mA
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 340mA, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 25V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SuperSOT?-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock246,588 |
|
Logic Level Gate | 60V | 340mA | 5 Ohm @ 340mA, 10V | 3.5V @ 250µA | 2.2nC @ 10V | 66pF @ 25V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT?-6 |
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|
Fairchild/ON Semiconductor |
MOSFET 2P-CH 20V 0.83A SC89-6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 830mA
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 830mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
- Power - Max: 446mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SC-89-6
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Package: SOT-563, SOT-666 |
Stock1,400,040 |
|
Logic Level Gate | 20V | 830mA | 500 mOhm @ 830mA, 4.5V | 1V @ 250µA | 3.1nC @ 4.5V | 135pF @ 10V | 446mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 25V 0.68A SSOT6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 680mA
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SuperSOT?-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock61,560 |
|
Logic Level Gate | 25V | 680mA | 450 mOhm @ 500mA, 4.5V | 1.5V @ 250µA | 2.3nC @ 4.5V | 50pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT?-6 |
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Fairchild/ON Semiconductor |
MOSFET 2P-CH 20V 1.9A SSOT6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.9A
- Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.9A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SuperSOT?-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock515,952 |
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Logic Level Gate | 20V | 1.9A | 170 mOhm @ 1.9A, 4.5V | 1.5V @ 250µA | 4.2nC @ 4.5V | 441pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT?-6 |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 20V SC89-6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 600mA, 350mA
- Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
- Power - Max: 446mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SC-89-6
|
Package: SOT-563, SOT-666 |
Stock6,560 |
|
Logic Level Gate | 20V | 600mA, 350mA | 700 mOhm @ 600mA, 4.5V | 1.5V @ 250µA | 1.1nC @ 4.5V | 60pF @ 10V | 446mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 |