|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 40V 6A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,688 |
|
Logic Level Gate | 40V | 6A | 29 mOhm @ 6A, 10V | 3V @ 250µA | 11nC @ 5V | 955pF @ 20V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 13A/30A 8QFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A, 30A
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: Power56
|
Package: 8-PowerTDFN |
Stock5,040 |
|
Logic Level Gate | 30V | 13A, 30A | 8 mOhm @ 13A, 10V | 2.7V @ 250µA | 30nC @ 10V | 2230pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | Power56 |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 12A/16A PWR33
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A, 16A
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
- Power - Max: 800mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-Power33 (3x3)
|
Package: 8-PowerWDFN |
Stock6,656 |
|
Logic Level Gate | 30V | 12A, 16A | 9 mOhm @ 12A, 10V | 3V @ 250µA | 18nC @ 10V | 1130pF @ 15V | 800mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-Power33 (3x3) |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 25V 17.5A/30A 8-MLP
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: Power56
|
Package: 8-PowerTDFN |
Stock7,376 |
|
Logic Level Gate | 25V | 17.5A, 30A | 5 mOhm @ 17.5A, 10V | 2V @ 250µA | 26nC @ 10V | 1570pF @ 13V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | Power56 |
|
|
Fairchild/ON Semiconductor |
MOSFET N/P-CH 60V/300V 8SOP
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V, 300V
- Current - Continuous Drain (Id) @ 25°C: 1.3A, 300mA
- Rds On (Max) @ Id, Vgs: 550 mOhm @ 650mA, 10V
- Vgs(th) (Max) @ Id: 1.95V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock172,440 |
|
Standard | 60V, 300V | 1.3A, 300mA | 550 mOhm @ 650mA, 10V | 1.95V @ 20mA | 2.1nC @ 5V | - | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 100V 2.7A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2.7A
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V
- Power - Max: 1.6W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock58,200 |
|
Logic Level Gate | 100V | 2.7A | 105 mOhm @ 2.7A, 10V | 4V @ 250µA | 4.1nC @ 10V | 210pF @ 50V | 1.6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 7.5A/10A PWR56
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.5A, 10A
- Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: Power56
|
Package: 8-PowerWDFN |
Stock661,428 |
|
Logic Level Gate | 30V | 7.5A, 10A | 21.5 mOhm @ 7.5A, 10V | 3V @ 250µA | 14nC @ 10V | 665pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | Power56 |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V POWER56
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: Power56
|
Package: 8-PowerWDFN |
Stock840,012 |
|
Logic Level Gate | 30V | 10.1A, 12.4A | 20 mOhm @ 10.1A, 10V | 3V @ 250µA | 11nC @ 10V | 608pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | Power56 |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 7.5A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.5A
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock85,080 |
|
Logic Level Gate | 30V | 7.5A | 18 mOhm @ 7.5A, 10V | 3V @ 250µA | 17nC @ 5V | 1235pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Fairchild/ON Semiconductor |
MOSFET N/P-CH 80V 4.3A/2.8A DPAK
- FET Type: N and P-Channel, Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 4.3A, 2.8A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 40V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: TO-252-4L
|
Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Stock36,264 |
|
Logic Level Gate | 80V | 4.3A, 2.8A | 80 mOhm @ 4.3A, 10V | 4V @ 250µA | 18nC @ 10V | 800pF @ 40V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | TO-252-4L |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 8A/12A POWER33
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A, 12A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
- Power - Max: 700mW, 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-Power33 (3x3)
|
Package: 8-PowerWDFN |
Stock121,020 |
|
Logic Level Gate | 30V | 8A, 12A | 20 mOhm @ 6A, 10V | 3V @ 250µA | 10nC @ 10V | 660pF @ 15V | 700mW, 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-Power33 (3x3) |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 100V 1.2A 6-SSOT
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.2A
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V
- Power - Max: 690mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SuperSOT?-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock311,916 |
|
Standard | 100V | 1.2A | 350 mOhm @ 1.2A, 10V | 4V @ 250µA | 2nC @ 10V | 70pF @ 50V | 690mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT?-6 |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 13A/23A 8-PQFN
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A, 23A
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: Power56
|
Package: 8-PowerTDFN |
Stock47,388 |
|
Logic Level Gate | 30V | 13A, 23A | 8 mOhm @ 13A, 10V | 2.7V @ 250µA | 29nC @ 10V | 1785pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | Power56 |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.9A, 8.2A
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,633,992 |
|
Logic Level Gate | 30V | 6.9A, 8.2A | 27 mOhm @ 6.9A, 10V | 3V @ 250µA | 15nC @ 10V | 600pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 20V 10A 6WLCSP
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10A
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFBGA, WLCSP
- Supplier Device Package: 6-WLCSP (1.3x2.3)
|
Package: 6-XFBGA, WLCSP |
Stock3,488 |
|
Logic Level Gate | 20V | 10A | 13 mOhm @ 1A, 4.5V | 1.2V @ 250µA | 24nC @ 10V | 2055pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFBGA, WLCSP | 6-WLCSP (1.3x2.3) |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 20V 7.5A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.5A
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock116,184 |
|
Logic Level Gate | 20V | 7.5A | 18 mOhm @ 7.5A, 4.5V | 1.5V @ 250µA | 17nC @ 4.5V | 1333pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 20V 4A POWER33
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 68 mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
- Power - Max: 1.92W, 1.78W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-MLP, Power33
- Supplier Device Package: MicroFET 3x3mm
|
Package: 6-MLP, Power33 |
Stock3,136 |
|
Logic Level Gate | 20V | 4A | 68 mOhm @ 4A, 4.5V | 2V @ 250µA | 3.4nC @ 4.5V | 270pF @ 10V | 1.92W, 1.78W | -55°C ~ 150°C (TJ) | Surface Mount | 6-MLP, Power33 | MicroFET 3x3mm |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 12A/15A 8-PQFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A, 15A
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: Power56
|
Package: 8-PowerWDFN |
Stock3,703,812 |
|
Logic Level Gate | 30V | 12A, 15A | 10 mOhm @ 12A, 10V | 3V @ 250µA | 24nC @ 10V | 1510pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | Power56 |
|
|
Fairchild/ON Semiconductor |
MOSFET 2P-CH 20V 3.8A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.8A
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.8A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock522,816 |
|
Logic Level Gate | 20V | 3.8A | 75 mOhm @ 3.8A, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 600pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Fairchild/ON Semiconductor |
MOSFET 2P-CH 30V 2.9A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.9A
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock48,300 |
|
Logic Level Gate | 30V | 2.9A | 130 mOhm @ 1A, 10V | 3V @ 250µA | 3.5nC @ 10V | 185pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 7A/13A POWER33
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A, 13A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
- Power - Max: 700mW, 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-Power33 (3x3)
|
Package: 8-PowerWDFN |
Stock103,104 |
|
Logic Level Gate | 30V | 7A, 13A | 22 mOhm @ 6A, 10V | 3V @ 250µA | 10nC @ 10V | 660pF @ 15V | 700mW, 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-Power33 (3x3) |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 5.5A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.5A
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock531,120 |
|
Logic Level Gate | 30V | 5.5A | 40 mOhm @ 5.5A, 10V | 3V @ 250µA | 7nC @ 5V | 460pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 6.3A/8.6A 8-SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock365,952 |
|
Logic Level Gate | 30V | 6.3A, 8.6A | 28 mOhm @ 6.3A, 10V | 3V @ 250µA | 15nC @ 10V | 610pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 40V 7A 8-MLP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V
- Power - Max: 1.9W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-Power33 (3x3)
|
Package: 8-PowerWDFN |
Stock26,400 |
|
Logic Level Gate | 40V | 7A | 20 mOhm @ 7A, 10V | 3V @ 250µA | 11nC @ 10V | 720pF @ 20V | 1.9W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-Power33 (3x3) |
|
|
Fairchild/ON Semiconductor |
MOSFET N/P-CH 30V 3.9A/3.5A 8-SO
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.5A
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,058,136 |
|
Standard | 30V | 3.9A, 3.5A | 65 mOhm @ 3.9A, 10V | 3V @ 250µA | 15nC @ 10V | 235pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 20V 3.8A 6-MICROFET
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.8A
- Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
- Power - Max: 600mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: 6-MicroFET (1.6x1.6)
|
Package: 6-UFDFN Exposed Pad |
Stock5,856 |
|
Logic Level Gate | 20V | 3.8A | 66 mOhm @ 3.4A, 4.5V | 1V @ 250µA | 4.2nC @ 4.5V | 300pF @ 10V | 600mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | 6-MicroFET (1.6x1.6) |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 13A/18A PWR56
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A, 18A
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: Power56
|
Package: 8-PowerTDFN |
Stock29,940 |
|
Logic Level Gate | 30V | 13A, 18A | 10 mOhm @ 13A, 10V | 2.7V @ 250µA | 24nC @ 10V | 1605pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | Power56 |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 6A/8A POWER33
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A, 8A
- Rds On (Max) @ Id, Vgs: 23.5 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
- Power - Max: 700mW, 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-Power33 (3x3)
|
Package: 8-PowerWDFN |
Stock431,520 |
|
Logic Level Gate | 30V | 6A, 8A | 23.5 mOhm @ 6A, 10V | 3V @ 250µA | 10nC @ 10V | 660pF @ 15V | 700mW, 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-Power33 (3x3) |