Page 2 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FQT1N60CTF_WS
Fairchild/ON Semiconductor

MOSFET N-CH 600V 0.2A SOT-223-4

Package: TO-261-4, TO-261AA

Stock36,000
NDT3055L
Fairchild/ON Semiconductor

MOSFET N-CH 60V 4A SOT-223-4

Package: TO-261-4, TO-261AA

Stock1,640,508
IRFM120ATF
Fairchild/ON Semiconductor

MOSFET N-CH 100V 2.3A SOT-223

Package: TO-261-4, TO-261AA

Stock136,572
FQD5P20TM
Fairchild/ON Semiconductor

MOSFET P-CH 200V 3.7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock60,600
FDMC4435BZ
Fairchild/ON Semiconductor

MOSFET P-CH 30V 8.5A POWER33

Package: 8-PowerWDFN

Stock443,580
FDS6680A
Fairchild/ON Semiconductor

MOSFET N-CH 30V 12.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,139,244
FDMA530PZ
Fairchild/ON Semiconductor

MOSFET P-CH 30V 6.8A MLP2X2

Package: 6-VDFN Exposed Pad

Stock477,336
FDMA507PZ
Fairchild/ON Semiconductor

MOSFET P-CH 20V 6-MICROFET

Package: 6-WDFN Exposed Pad

Stock247,176
FDD5614P
Fairchild/ON Semiconductor

MOSFET P-CH 60V 15A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock759,972
NDT3055
Fairchild/ON Semiconductor

MOSFET N-CH 60V 4A SOT-223-4

Package: TO-261-4, TO-261AA

Stock748,524
FQD10N20CTM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 7.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock64,860
FDMA520PZ
Fairchild/ON Semiconductor

MOSFET P-CH 20V 7.3A MLP2X2

Package: 6-VDFN Exposed Pad

Stock243,840
FDC5614P
Fairchild/ON Semiconductor

MOSFET P-CH 60V 3A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock1,840,812
FQD1N60CTM
Fairchild/ON Semiconductor

MOSFET N-CH 600V 1A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock252,396
FDC3612
Fairchild/ON Semiconductor

MOSFET N-CH 100V 2.6A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock438,000
RFD3055LESM9A
Fairchild/ON Semiconductor

MOSFET N-CH 60V 11A TO-252AA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock787,956
FDT434P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 6A SOT-223

Package: TO-261-4, TO-261AA

Stock660,252
FDS4435BZ
Fairchild/ON Semiconductor

MOSFET P-CH 30V 8.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,980,904
FQT3P20TF
Fairchild/ON Semiconductor

MOSFET P-CH 200V 0.67A SOT-223

Package: TO-261-4, TO-261AA

Stock42,000
FDMA410NZ
Fairchild/ON Semiconductor

MOSFET N-CH 20V 9.5A 6-MICROFET

Package: 6-VDFN Exposed Pad

Stock385,668

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FQT1N60CTF_WS	Fairchild/ON Semiconductor	MOSFET N-CH 600V 0.2A SOT-223-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.1W (Tc) Rds On (Max) @ Id, Vgs: 11.5 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock36,000	MOSFET (Metal Oxide)	600V	200mA (Tc)	10V	4V @ 250µA	6.2nC @ 10V	170pF @ 25V	±30V	-	2.1W (Tc)	11.5 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
NDT3055L	Fairchild/ON Semiconductor	MOSFET N-CH 60V 4A SOT-223-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 4A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock1,640,508	MOSFET (Metal Oxide)	60V	4A (Ta)	4.5V, 10V	2V @ 250µA	20nC @ 10V	345pF @ 25V	±20V	-	3W (Ta)	100 mOhm @ 4A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
IRFM120ATF	Fairchild/ON Semiconductor	MOSFET N-CH 100V 2.3A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock136,572	MOSFET (Metal Oxide)	100V	2.3A (Ta)	10V	4V @ 250µA	22nC @ 10V	480pF @ 25V	±20V	-	2.4W (Ta)	200 mOhm @ 1.15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FQD5P20TM	Fairchild/ON Semiconductor	MOSFET P-CH 200V 3.7A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.85A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock60,600	MOSFET (Metal Oxide)	200V	3.7A (Tc)	10V	5V @ 250µA	13nC @ 10V	430pF @ 25V	±30V	-	2.5W (Ta), 45W (Tc)	1.4 Ohm @ 1.85A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMC4435BZ	Fairchild/ON Semiconductor	MOSFET P-CH 30V 8.5A POWER33 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2045pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3), Power33 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock443,580	MOSFET (Metal Oxide)	30V	8.5A (Ta), 18A (Tc)	4.5V, 10V	3V @ 250µA	46nC @ 10V	2045pF @ 15V	±25V	-	2.3W (Ta), 31W (Tc)	20 mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3), Power33	8-PowerWDFN
FDS6680A	Fairchild/ON Semiconductor	MOSFET N-CH 30V 12.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,139,244	MOSFET (Metal Oxide)	30V	12.5A (Ta)	4.5V, 10V	3V @ 250µA	23nC @ 5V	1620pF @ 15V	±20V	-	2.5W (Ta)	9.5 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDMA530PZ	Fairchild/ON Semiconductor	MOSFET P-CH 30V 6.8A MLP2X2 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock477,336	MOSFET (Metal Oxide)	30V	6.8A (Ta)	4.5V, 10V	3V @ 250µA	24nC @ 10V	1070pF @ 15V	±25V	-	2.4W (Ta)	35 mOhm @ 6.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-VDFN Exposed Pad
FDMA507PZ	Fairchild/ON Semiconductor	MOSFET P-CH 20V 6-MICROFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2015pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock247,176	MOSFET (Metal Oxide)	20V	7.8A (Ta)	1.8V, 4.5V	1.5V @ 250µA	42nC @ 5V	2015pF @ 10V	±8V	-	2.4W (Ta)	24 mOhm @ 7.8A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-WDFN Exposed Pad
FDD5614P	Fairchild/ON Semiconductor	MOSFET P-CH 60V 15A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 759pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock759,972	MOSFET (Metal Oxide)	60V	15A (Ta)	4.5V, 10V	3V @ 250µA	24nC @ 10V	759pF @ 30V	±20V	-	3.8W (Ta), 42W (Tc)	100 mOhm @ 4.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
NDT3055	Fairchild/ON Semiconductor	MOSFET N-CH 60V 4A SOT-223-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 4A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock748,524	MOSFET (Metal Oxide)	60V	4A (Ta)	10V	4V @ 250µA	15nC @ 10V	250pF @ 30V	±20V	-	3W (Ta)	100 mOhm @ 4A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FQD10N20CTM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 7.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 3.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock64,860	MOSFET (Metal Oxide)	200V	7.8A (Tc)	10V	4V @ 250µA	26nC @ 10V	510pF @ 25V	±30V	-	50W (Tc)	360 mOhm @ 3.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMA520PZ	Fairchild/ON Semiconductor	MOSFET P-CH 20V 7.3A MLP2X2 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1645pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock243,840	MOSFET (Metal Oxide)	20V	7.3A (Ta)	2.5V, 4.5V	1.5V @ 250µA	20nC @ 4.5V	1645pF @ 10V	±12V	-	2.4W (Ta)	30 mOhm @ 7.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-VDFN Exposed Pad
FDC5614P	Fairchild/ON Semiconductor	MOSFET P-CH 60V 3A SSOT-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 759pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 105 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,840,812	MOSFET (Metal Oxide)	60V	3A (Ta)	4.5V, 10V	3V @ 250µA	24nC @ 10V	759pF @ 30V	±20V	-	1.6W (Ta)	105 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FQD1N60CTM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 1A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 11.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock252,396	MOSFET (Metal Oxide)	600V	1A (Tc)	10V	4V @ 250µA	6.2nC @ 10V	170pF @ 25V	±30V	-	2.5W (Ta), 28W (Tc)	11.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDC3612	Fairchild/ON Semiconductor	MOSFET N-CH 100V 2.6A SSOT-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock438,000	MOSFET (Metal Oxide)	100V	2.6A (Ta)	6V, 10V	4V @ 250µA	20nC @ 10V	660pF @ 50V	±20V	-	1.6W (Ta)	125 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
RFD3055LESM9A	Fairchild/ON Semiconductor	MOSFET N-CH 60V 11A TO-252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 107 mOhm @ 8A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock787,956	MOSFET (Metal Oxide)	60V	11A (Tc)	5V	3V @ 250µA	11.3nC @ 10V	350pF @ 25V	±16V	-	38W (Tc)	107 mOhm @ 8A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FDT434P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 6A SOT-223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1187pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock660,252	MOSFET (Metal Oxide)	20V	6A (Ta)	2.5V, 4.5V	1V @ 250µA	19nC @ 4.5V	1187pF @ 10V	±8V	-	3W (Ta)	50 mOhm @ 6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FDS4435BZ	Fairchild/ON Semiconductor	MOSFET P-CH 30V 8.8A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1845pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,980,904	MOSFET (Metal Oxide)	30V	8.8A (Ta)	4.5V, 10V	3V @ 250µA	40nC @ 10V	1845pF @ 15V	±25V	-	2.5W (Ta)	20 mOhm @ 8.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FQT3P20TF	Fairchild/ON Semiconductor	MOSFET P-CH 200V 0.67A SOT-223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 670mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 335mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock42,000	MOSFET (Metal Oxide)	200V	670mA (Tc)	10V	5V @ 250µA	8nC @ 10V	250pF @ 25V	±30V	-	2.5W (Tc)	2.7 Ohm @ 335mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FDMA410NZ	Fairchild/ON Semiconductor	MOSFET N-CH 20V 9.5A 6-MICROFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock385,668	MOSFET (Metal Oxide)	20V	9.5A (Ta)	1.5V, 4.5V	1V @ 250µA	14nC @ 4.5V	1080pF @ 10V	±8V	-	2.4W (Ta)	23 mOhm @ 9.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-VDFN Exposed Pad
FDC8878	Fairchild/ON Semiconductor	MOSFET N-CH 30V 8A 6-SSOT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 16 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock566,292	MOSFET (Metal Oxide)	30V	8A (Ta), 8A (Tc)	4.5V, 10V	3V @ 250µA	18nC @ 10V	1040pF @ 15V	±20V	-	1.6W (Ta)	16 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FDN359AN	Fairchild/ON Semiconductor	MOSFET N-CH 30V 2.7A SSOT-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 46 mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock23,736	MOSFET (Metal Oxide)	30V	2.7A (Ta)	4.5V, 10V	3V @ 250µA	7nC @ 5V	480pF @ 10V	±20V	-	500mW (Ta)	46 mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT-3	TO-236-3, SC-59, SOT-23-3
NDT2955	Fairchild/ON Semiconductor	MOSFET P-CH 60V 2.5A SOT-223-4 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 601pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 300 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock429,912	MOSFET (Metal Oxide)	60V	2.5A (Ta)	4.5V, 10V	4V @ 250µA	15nC @ 10V	601pF @ 30V	±20V	-	3W (Ta)	300 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FQT7N10LTF	Fairchild/ON Semiconductor	MOSFET N-CH 100V 1.7A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 850mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock179,892	MOSFET (Metal Oxide)	100V	1.7A (Tc)	5V, 10V	2V @ 250µA	6nC @ 5V	290pF @ 25V	±20V	-	2W (Tc)	350 mOhm @ 850mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FDC5661N_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 6-SSOT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 763pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 47 mOhm @ 4.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-SSOT Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock6,936	MOSFET (Metal Oxide)	60V	4.3A (Ta)	4.5V, 10V	3V @ 250µA	19nC @ 10V	763pF @ 25V	±20V	-	1.6W (Ta)	47 mOhm @ 4.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-SSOT	SOT-23-6 Thin, TSOT-23-6
FDY300NZ	Fairchild/ON Semiconductor	MOSFET N-CH 20V 600MA SC89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-3 Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock331,752	MOSFET (Metal Oxide)	20V	600mA (Ta)	1.8V, 4.5V	1.3V @ 250µA	1.1nC @ 4.5V	60pF @ 10V	±12V	-	625mW (Ta)	700 mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-3	SC-89, SOT-490
FDN342P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 2A SSOT-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock479,172	MOSFET (Metal Oxide)	20V	2A (Ta)	2.5V, 4.5V	1.5V @ 250µA	9nC @ 4.5V	635pF @ 10V	±12V	-	500mW (Ta)	80 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT-3	TO-236-3, SC-59, SOT-23-3
FDC658AP	Fairchild/ON Semiconductor	MOSFET P-CH 30V 4A SSOT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock2,349,768	MOSFET (Metal Oxide)	30V	4A (Ta)	4.5V, 10V	3V @ 250µA	8.1nC @ 5V	470pF @ 15V	±25V	-	1.6W (Ta)	50 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6