Page 4 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FDS5672
Fairchild/ON Semiconductor

MOSFET N-CH 60V 12A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock370,836
FDMS86252
Fairchild/ON Semiconductor

MOSFET N-CH 150V 16A POWER56

Package: 8-PowerTDFN

Stock26,100
NDT456P
Fairchild/ON Semiconductor

MOSFET P-CH 30V 7.5A SOT-223-4

Package: TO-261-4, TO-261AA

Stock773,748
FDS6574A
Fairchild/ON Semiconductor

MOSFET N-CH 20V 16A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock136,068
FDS2572
Fairchild/ON Semiconductor

MOSFET N-CH 150V 4.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock500,760
FDMS86101
Fairchild/ON Semiconductor

MOSFET N-CH 100V 12.4A POWER56

Package: 8-PowerTDFN

Stock1,179,696
FDD18N20LZ
Fairchild/ON Semiconductor

MOSFET N-CH 200V DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock90,492
FDT86102LZ
Fairchild/ON Semiconductor

MOSFET N-CH 100V 6.6A SOT-223

Package: TO-261-4, TO-261AA

Stock35,112
FDMC86139P
Fairchild/ON Semiconductor

MOSFET P-CH 100V 4.4A 8MLP

Package: 8-PowerWDFN

Stock16,824
FDMC86102LZ
Fairchild/ON Semiconductor

MOSFET N-CH 100V 7A 8MLP

Package: 8-PowerWDFN

Stock51,612
FDS4141_F085
Fairchild/ON Semiconductor

MOSFET P-CH 40V 10.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock37,458
FDS3672
Fairchild/ON Semiconductor

MOSFET N-CH 100V 7.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock459,060
FDS8813NZ
Fairchild/ON Semiconductor

MOSFET N-CH 30V 18.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,010,136
FDD5690
Fairchild/ON Semiconductor

MOSFET N-CH 60V 30A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock260,508
FDD13AN06A0
Fairchild/ON Semiconductor

MOSFET N-CH 60V 50A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock62,748
FDS2582
Fairchild/ON Semiconductor

MOSFET N-CH 150V 4.1A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock556,344
FDMC510P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 18A 8-MLP

Package: 8-PowerWDFN

Stock1,015,068
FDM3622
Fairchild/ON Semiconductor

MOSFET N-CH 100V 4.4A 8MLP

Package: 8-PowerWDFN

Stock362,040
FDMA7630
Fairchild/ON Semiconductor

MOSFET N-CH 30V 6-MICROFET

Package: 6-VDFN Exposed Pad

Stock360,312
FDS4675
Fairchild/ON Semiconductor

MOSFET P-CH 40V 11A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock175,080

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FDS5672	Fairchild/ON Semiconductor	MOSFET N-CH 60V 12A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock370,836	MOSFET (Metal Oxide)	60V	12A (Tc)	6V, 10V	4V @ 250µA	45nC @ 10V	2200pF @ 25V	±20V	-	2.5W (Ta)	10 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDMS86252	Fairchild/ON Semiconductor	MOSFET N-CH 150V 16A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 51 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock26,100	MOSFET (Metal Oxide)	150V	4.6A (Ta), 16A (Tc)	6V, 10V	4V @ 250µA	15nC @ 10V	905pF @ 75V	±20V	-	2.5W (Ta), 69W (Tc)	51 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
NDT456P	Fairchild/ON Semiconductor	MOSFET P-CH 30V 7.5A SOT-223-4 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock773,748	MOSFET (Metal Oxide)	30V	7.5A (Ta)	4.5V, 10V	3V @ 250µA	67nC @ 10V	1440pF @ 15V	±20V	-	3W (Ta)	30 mOhm @ 7.5A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FDS6574A	Fairchild/ON Semiconductor	MOSFET N-CH 20V 16A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 7657pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 6 mOhm @ 16A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock136,068	MOSFET (Metal Oxide)	20V	16A (Ta)	1.8V, 4.5V	1.5V @ 250µA	105nC @ 4.5V	7657pF @ 10V	±8V	-	2.5W (Ta)	6 mOhm @ 16A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS2572	Fairchild/ON Semiconductor	MOSFET N-CH 150V 4.9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 47 mOhm @ 4.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock500,760	MOSFET (Metal Oxide)	150V	4.9A (Tc)	6V, 10V	4V @ 250µA	38nC @ 10V	2050pF @ 25V	±20V	-	2.5W (Ta)	47 mOhm @ 4.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDMS86101	Fairchild/ON Semiconductor	MOSFET N-CH 100V 12.4A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock1,179,696	MOSFET (Metal Oxide)	100V	12.4A (Ta), 60A (Tc)	6V, 10V	4V @ 250µA	55nC @ 10V	3000pF @ 50V	±20V	-	2.5W (Ta), 104W (Tc)	8 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDD18N20LZ	Fairchild/ON Semiconductor	MOSFET N-CH 200V DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1575pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock90,492	MOSFET (Metal Oxide)	200V	16A (Tc)	5V, 10V	2.5V @ 250µA	40nC @ 10V	1575pF @ 25V	±20V	-	89W (Tc)	125 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDT86102LZ	Fairchild/ON Semiconductor	MOSFET N-CH 100V 6.6A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock35,112	MOSFET (Metal Oxide)	100V	6.6A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 10V	1490pF @ 50V	±20V	-	2.2W (Ta)	28 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FDMC86139P	Fairchild/ON Semiconductor	MOSFET P-CH 100V 4.4A 8MLP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock16,824	MOSFET (Metal Oxide)	100V	4.4A (Ta), 15A (Tc)	6V, 10V	4V @ 250µA	22nC @ 10V	1335pF @ 50V	±25V	-	2.3W (Ta), 40W (Tc)	67 mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
FDMC86102LZ	Fairchild/ON Semiconductor	MOSFET N-CH 100V 7A 8MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock51,612	MOSFET (Metal Oxide)	100V	7A (Ta), 18A (Tc)	4.5V, 10V	2.2V @ 250µA	22nC @ 10V	1290pF @ 50V	±20V	-	2.3W (Ta), 41W (Tc)	24 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power33	8-PowerWDFN
FDS4141_F085	Fairchild/ON Semiconductor	MOSFET P-CH 40V 10.8A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2005pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock37,458	MOSFET (Metal Oxide)	40V	10.8A (Ta)	4.5V, 10V	3V @ 250µA	45nC @ 10V	2005pF @ 20V	±20V	-	1.6W (Ta)	13 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS3672	Fairchild/ON Semiconductor	MOSFET N-CH 100V 7.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2015pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock459,060	MOSFET (Metal Oxide)	100V	7.5A (Ta)	6V, 10V	4V @ 250µA	37nC @ 10V	2015pF @ 25V	±20V	-	2.5W (Ta)	23 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS8813NZ	Fairchild/ON Semiconductor	MOSFET N-CH 30V 18.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4145pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 18.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,010,136	MOSFET (Metal Oxide)	30V	18.5A (Ta)	4.5V, 10V	3V @ 250µA	76nC @ 10V	4145pF @ 15V	±20V	-	2.5W (Ta)	4.5 mOhm @ 18.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDD5690	Fairchild/ON Semiconductor	MOSFET N-CH 60V 30A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock260,508	MOSFET (Metal Oxide)	60V	30A (Tc)	6V, 10V	4V @ 250µA	32nC @ 10V	1110pF @ 25V	±20V	-	3.2W (Ta), 50W (Tc)	27 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD13AN06A0	Fairchild/ON Semiconductor	MOSFET N-CH 60V 50A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock62,748	MOSFET (Metal Oxide)	60V	9.9A (Ta), 50A (Tc)	6V, 10V	4V @ 250µA	29nC @ 10V	1350pF @ 25V	±20V	-	115W (Tc)	13.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDS2582	Fairchild/ON Semiconductor	MOSFET N-CH 150V 4.1A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 66 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock556,344	MOSFET (Metal Oxide)	150V	4.1A (Ta)	6V, 10V	4V @ 250µA	25nC @ 10V	1290pF @ 25V	±20V	-	2.5W (Ta)	66 mOhm @ 4.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDMC510P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 18A 8-MLP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 116nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 7860pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 12A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock1,015,068	MOSFET (Metal Oxide)	20V	12A (Ta), 18A (Tc)	1.5V, 4.5V	1V @ 250µA	116nC @ 4.5V	7860pF @ 10V	±8V	-	2.3W (Ta), 41W (Tc)	8 mOhm @ 12A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
FDM3622	Fairchild/ON Semiconductor	MOSFET N-CH 100V 4.4A 8MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock362,040	MOSFET (Metal Oxide)	100V	4.4A (Ta)	6V, 10V	4V @ 250µA	17nC @ 10V	1090pF @ 25V	±20V	-	2.1W (Ta)	60 mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
FDMA7630	Fairchild/ON Semiconductor	MOSFET N-CH 30V 6-MICROFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock360,312	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	3V @ 250µA	22nC @ 10V	1360pF @ 15V	±20V	-	2.4W (Ta)	13 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-VDFN Exposed Pad
FDS4675	Fairchild/ON Semiconductor	MOSFET P-CH 40V 11A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock175,080	MOSFET (Metal Oxide)	40V	11A (Ta)	4.5V, 10V	3V @ 250µA	56nC @ 4.5V	4350pF @ 20V	±20V	-	2.4W (Ta)	13 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDFS2P106A	Fairchild/ON Semiconductor	MOSFET P-CH 60V 3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 714pF @ 30V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock20,544	MOSFET (Metal Oxide)	60V	3A (Ta)	4.5V, 10V	3V @ 250µA	21nC @ 10V	714pF @ 30V	±20V	Schottky Diode (Isolated)	900mW (Ta)	110 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
FDS4141	Fairchild/ON Semiconductor	MOSFET P-CH 40V 10.8A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock421,752	MOSFET (Metal Oxide)	40V	10.8A (Ta)	4.5V, 10V	3V @ 250µA	49nC @ 10V	2670pF @ 20V	±20V	-	5W (Ta)	13 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDMC5614P	Fairchild/ON Semiconductor	MOSFET P-CH 60V 5.7A POWER33 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 13.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3), Power33 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock104,856	MOSFET (Metal Oxide)	60V	5.7A (Ta), 13.5A (Tc)	4.5V, 10V	3V @ 250µA	20nC @ 10V	1055pF @ 30V	±20V	-	2.1W (Ta), 42W (Tc)	100 mOhm @ 5.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3), Power33	8-PowerWDFN
FDS6576	Fairchild/ON Semiconductor	MOSFET P-CH 20V 11A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4044pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 14 mOhm @ 11A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock62,316	MOSFET (Metal Oxide)	20V	11A (Ta)	2.5V, 4.5V	1.5V @ 250µA	60nC @ 4.5V	4044pF @ 10V	±12V	-	2.5W (Ta)	14 mOhm @ 11A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS4672A	Fairchild/ON Semiconductor	MOSFET N-CH 40V 11A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4766pF @ 20V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 11A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock22,800	MOSFET (Metal Oxide)	40V	11A (Ta)	4.5V	2V @ 250µA	49nC @ 4.5V	4766pF @ 20V	±12V	-	2.5W (Ta)	13 mOhm @ 11A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FQD2N100TM	Fairchild/ON Semiconductor	MOSFET N-CH 1000V 1.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 9 Ohm @ 800mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock140,364	MOSFET (Metal Oxide)	1000V	1.6A (Tc)	10V	5V @ 250µA	15.5nC @ 10V	520pF @ 25V	±30V	-	2.5W (Ta), 50W (Tc)	9 Ohm @ 800mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDS4465	Fairchild/ON Semiconductor	MOSFET P-CH 20V 13.5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 8237pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 13.5A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock498,168	MOSFET (Metal Oxide)	20V	13.5A (Ta)	1.8V, 4.5V	1.5V @ 250µA	120nC @ 4.5V	8237pF @ 10V	±8V	-	2.5W (Ta)	8.5 mOhm @ 13.5A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDD6685	Fairchild/ON Semiconductor	MOSFET P-CH 30V 11A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 52W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock224,244	MOSFET (Metal Oxide)	30V	11A (Ta), 40A (Tc)	4.5V, 10V	3V @ 250µA	24nC @ 5V	1715pF @ 15V	±25V	-	52W (Ta)	20 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63