Page 29 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FDB3672_F085
Fairchild/ON Semiconductor

MOSFET N-CH 100V 44A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,000
FDS86540
Fairchild/ON Semiconductor

MOSFET N CH 60V 18A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,336
FDMC7660DC
Fairchild/ON Semiconductor

MOSFET N-CH 30V 40A POWER33

Package: 8-PowerTDFN

Stock7,392
FDPF18N20FT_G
Fairchild/ON Semiconductor

MOSFET N CH 200V 18A TO220F

Package: TO-220-3 Full Pack

Stock414,012
FCD380N60E
Fairchild/ON Semiconductor

MOSFET N CH 600V 10.2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,576
FDD6688
Fairchild/ON Semiconductor

MOSFET N-CH 30V 84A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock119,388
FDS86140
Fairchild/ON Semiconductor

MOSFET N-CH 100V 11.2A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock15,948
FDMS7572S
Fairchild/ON Semiconductor

MOSFET N-CH 25V 23A POWER56

Package: 8-PowerTDFN

Stock19,788
FDS86141
Fairchild/ON Semiconductor

MOSFET N-CH 100V 7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock16,656
FDMC86260
Fairchild/ON Semiconductor

MOSFET N CH 150V 5.4A POWER 33

Package: 8-PowerWDFN

Stock4,144
FDMS8027S
Fairchild/ON Semiconductor

MOSFET N-CH 30V POWER56

Package: 8-PowerTDFN

Stock154,104
FDB14AN06LA0_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 67A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock20,256
FDS2672_F085
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,216
FDI9409_F085
Fairchild/ON Semiconductor

MOSFET N-CH 40V

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock9,492
FDMC86184
Fairchild/ON Semiconductor

MOSFET N-CH 100V 57A 8PQFN

Package: 8-PowerWDFN

Stock2,608
FDP120N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 74A TO-220

Package: TO-220-3

Stock475,920
FDD6760A
Fairchild/ON Semiconductor

MOSFET NCH 25V 27A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock642,060
FDD2572
Fairchild/ON Semiconductor

MOSFET N-CH 150V 29A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock57,084
FDMS86103L
Fairchild/ON Semiconductor

MOSFET N-CH 100V 12A POWER56

Package: 8-PowerTDFN

Stock5,936
FDP053N08B_F102
Fairchild/ON Semiconductor

MOSFET N-CH 80V 75A TO-220

Package: TO-220-3

Stock11,472

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FDB3672_F085	Fairchild/ON Semiconductor	MOSFET N-CH 100V 44A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,000	MOSFET (Metal Oxide)	100V	7.2A (Ta), 44A (Tc)	6V, 10V	4V @ 250µA	31nC @ 10V	1710pF @ 25V	±20V	-	120W (Tc)	28 mOhm @ 44A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDS86540	Fairchild/ON Semiconductor	MOSFET N CH 60V 18A 8-SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6410pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,336	MOSFET (Metal Oxide)	60V	18A (Ta)	8V, 10V	4V @ 250µA	90nC @ 10V	6410pF @ 30V	±20V	-	2.5W (Ta), 5W (Tc)	4.5 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDMC7660DC	Fairchild/ON Semiconductor	MOSFET N-CH 30V 40A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5170pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Dual Cool ? 33 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,392	MOSFET (Metal Oxide)	30V	30A (Ta), 40A (Tc)	4.5V, 10V	2.5V @ 250µA	76nC @ 10V	5170pF @ 15V	±20V	-	3W (Ta), 78W (Tc)	2.2 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Dual Cool ? 33	8-PowerTDFN
FDPF18N20FT_G	Fairchild/ON Semiconductor	MOSFET N CH 200V 18A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock414,012	MOSFET (Metal Oxide)	200V	18A (Tc)	10V	5V @ 250µA	26nC @ 10V	1180pF @ 25V	±30V	-	35W (Tc)	140 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
FCD380N60E	Fairchild/ON Semiconductor	MOSFET N CH 600V 10.2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,576	MOSFET (Metal Oxide)	600V	10.2A (Tc)	10V	3.5V @ 250µA	45nC @ 10V	1770pF @ 25V	±20V	-	106W (Tc)	380 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6688	Fairchild/ON Semiconductor	MOSFET N-CH 30V 84A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 84A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3845pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Ta) Rds On (Max) @ Id, Vgs: 5 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock119,388	MOSFET (Metal Oxide)	30V	84A (Ta)	4.5V, 10V	3V @ 250µA	56nC @ 10V	3845pF @ 15V	±20V	-	83W (Ta)	5 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDS86140	Fairchild/ON Semiconductor	MOSFET N-CH 100V 11.2A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2580pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 9.8 mOhm @ 11.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock15,948	MOSFET (Metal Oxide)	100V	11.2A (Ta)	6V, 10V	4V @ 250µA	41nC @ 10V	2580pF @ 50V	±20V	-	2.5W (Ta), 5W (Tc)	9.8 mOhm @ 11.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDMS7572S	Fairchild/ON Semiconductor	MOSFET N-CH 25V 23A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock19,788	MOSFET (Metal Oxide)	25V	23A (Ta), 49A (Tc)	4.5V, 10V	3V @ 1mA	45nC @ 10V	2780pF @ 13V	±20V	-	2.5W (Ta), 46W (Tc)	2.9 mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDS86141	Fairchild/ON Semiconductor	MOSFET N-CH 100V 7A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 934pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock16,656	MOSFET (Metal Oxide)	100V	7A (Ta)	6V, 10V	4V @ 250µA	16.5nC @ 10V	934pF @ 50V	±20V	-	2.5W (Ta)	23 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDMC86260	Fairchild/ON Semiconductor	MOSFET N CH 150V 5.4A POWER 33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock4,144	MOSFET (Metal Oxide)	150V	5.4A (Ta), 16A (Tc)	6V, 10V	4V @ 250µA	21nC @ 10V	1330pF @ 75V	±20V	-	2.3W (Ta), 54W (Tc)	34 mOhm @ 5.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power33	8-PowerWDFN
FDMS8027S	Fairchild/ON Semiconductor	MOSFET N-CH 30V POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1815pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock154,104	MOSFET (Metal Oxide)	30V	18A (Ta), 22A (Tc)	4.5V, 10V	3V @ 1mA	31nC @ 10V	1815pF @ 15V	±20V	-	2.5W (Ta), 36W (Tc)	5 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDB14AN06LA0_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 67A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 67A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock20,256	MOSFET (Metal Oxide)	60V	67A (Tc)	5V, 10V	3V @ 250µA	31nC @ 5V	2900pF @ 25V	±20V	-	125W (Tc)	11.6 mOhm @ 67A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDS2672_F085	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3.9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2535pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,216	MOSFET (Metal Oxide)	200V	3.9A (Ta)	6V, 10V	4V @ 250µA	46nC @ 10V	2535pF @ 100V	±20V	-	2.5W (Ta)	70 mOhm @ 3.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDI9409_F085	Fairchild/ON Semiconductor	MOSFET N-CH 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tj) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock9,492	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	56nC @ 10V	2980pF @ 25V	±20V	-	94W (Tj)	3.8 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK (TO-262)	TO-262-3 Long Leads, I2Pak, TO-262AA
FDMC86184	Fairchild/ON Semiconductor	MOSFET N-CH 100V 57A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 6V Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,608	MOSFET (Metal Oxide)	100V	57A (Tc)	6V, 10V	4V @ 110µA	20nC @ 6V	2090pF @ 50V	±20V	-	54W (Tc)	8.5 mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (3.3x3.3), Power33	8-PowerWDFN
FDP120N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 74A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5605pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 74A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock475,920	MOSFET (Metal Oxide)	100V	74A (Tc)	10V	4.5V @ 250µA	86nC @ 10V	5605pF @ 25V	±20V	-	170W (Tc)	12 mOhm @ 74A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDD6760A	Fairchild/ON Semiconductor	MOSFET NCH 25V 27A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 27A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock642,060	MOSFET (Metal Oxide)	25V	27A (Ta), 50A (Tc)	4.5V, 10V	3V @ 250µA	62nC @ 10V	3170pF @ 13V	±20V	-	3.7W (Ta), 65W (Tc)	3.2 mOhm @ 27A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD2572	Fairchild/ON Semiconductor	MOSFET N-CH 150V 29A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 54 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock57,084	MOSFET (Metal Oxide)	150V	4A (Ta), 29A (Tc)	6V, 10V	4V @ 250µA	34nC @ 10V	1770pF @ 25V	±20V	-	135W (Tc)	54 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS86103L	Fairchild/ON Semiconductor	MOSFET N-CH 100V 12A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,936	MOSFET (Metal Oxide)	100V	12A (Ta), 49A (Tc)	4.5V, 10V	3V @ 250µA	60nC @ 10V	3710pF @ 50V	±20V	-	2.5W (Ta), 104W (Tc)	8 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FDP053N08B_F102	Fairchild/ON Semiconductor	MOSFET N-CH 80V 75A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5960pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 146W (Tc) Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock11,472	MOSFET (Metal Oxide)	80V	75A (Tc)	10V	4.5V @ 250µA	85nC @ 10V	5960pF @ 40V	±20V	-	146W (Tc)	5.3 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDP070AN06A0	Fairchild/ON Semiconductor	MOSFET N-CH 60V 80A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 175W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock92,388	MOSFET (Metal Oxide)	60V	15A (Ta), 80A (Tc)	10V	4V @ 250µA	66nC @ 10V	3000pF @ 25V	±20V	-	175W (Tc)	7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQD4P40TM_AM002	Fairchild/ON Semiconductor	MOSFET P-CH 400V 2.7A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 3.1 Ohm @ 1.35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,840	MOSFET (Metal Oxide)	400V	2.7A (Tc)	10V	5V @ 250µA	23nC @ 10V	680pF @ 25V	±30V	-	2.5W (Ta), 50W (Tc)	3.1 Ohm @ 1.35A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS015N04B	Fairchild/ON Semiconductor	MOSFET N-CH 40V 31.3A 8-PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8725pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock179,796	MOSFET (Metal Oxide)	40V	31.3A (Ta), 100A (Tc)	10V	4V @ 250µA	118nC @ 10V	8725pF @ 20V	±20V	-	2.5W (Ta), 104W (Tc)	1.5 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FCP380N60E	Fairchild/ON Semiconductor	MOSFET N-CH 600V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock15,384	MOSFET (Metal Oxide)	600V	10.2A (Tc)	10V	3.5V @ 250µA	45nC @ 10V	1770pF @ 25V	±20V	-	106W (Tc)	380 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FCPF380N60E	Fairchild/ON Semiconductor	MOSFET N-CH 600V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,712	MOSFET (Metal Oxide)	600V	10.2A (Tc)	10V	3.5V @ 250µA	45nC @ 10V	1770pF @ 25V	±20V	-	31W (Tc)	380 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack
FCD620N60ZF	Fairchild/ON Semiconductor	MOSFET N-CH 600V 7.3A TO-252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 620 mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock390,552	MOSFET (Metal Oxide)	600V	7.3A (Tc)	10V	5V @ 250µA	36nC @ 10V	1135pF @ 25V	±20V	-	89W (Tc)	620 mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMC86261P	Fairchild/ON Semiconductor	MOSFET P-CH 150V 2.7A 8MLP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 75V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3), Power33 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock6,016	MOSFET (Metal Oxide)	150V	2.7A (Ta), 9A (Tc)	6V, 10V	4V @ 250µA	24nC @ 10V	1360pF @ 75V	±25V	-	2.3W (Ta), 40W (Tc)	160 mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3), Power33	8-PowerWDFN
FDB86569_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tj) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,464	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4V @ 250µA	52nC @ 10V	2520pF @ 30V	±20V	-	94W (Tj)	5.6 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB