Page 26 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FDMS7656AS
Fairchild/ON Semiconductor

MOSFET N-CH 30V POWER56

Package: 8-PowerTDFN

Stock103,200
FDMS5360L_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 60A POWER56

Package: 8-PowerTDFN

Stock3,184
FDMS9409_F085
Fairchild/ON Semiconductor

MOSFET N-CH 40V 65A

Package: 8-PowerTDFN

Stock6,048
FDD3690
Fairchild/ON Semiconductor

MOSFET N-CH 100V 22A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock168,732
FDMS86310
Fairchild/ON Semiconductor

MOSFET N-CH 80V 17A 8-PQFN

Package: 8-PowerTDFN

Stock24,600
FCD2250N80Z
Fairchild/ON Semiconductor

MOSFET N-CH 800V 2.6A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,936
FDMC7660S
Fairchild/ON Semiconductor

MOSFET N-CH 30V POWER33

Package: 8-PowerTDFN

Stock88,392
FDMC612PZ
Fairchild/ON Semiconductor

MOSFET P-CH 20V 8-MLP

Package: 8-PowerWDFN

Stock3,392
FDD6N50TM_F085
Fairchild/ON Semiconductor

MOSFET N-CH 500V 6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,440
MTD3055VL
Fairchild/ON Semiconductor

MOSFET N-CH 60V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock56,472
FCD5N60TM_WS
Fairchild/ON Semiconductor

MOSFET N-CH 600V 4.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,400
FQU5N50CTU_WS
Fairchild/ON Semiconductor

MOSFET N-CH 500V 4A

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock38,502
FDMS8570S
Fairchild/ON Semiconductor

MOSFET N-CH 25V 24A 8-PQFN

Package: 8-PowerTDFN

Stock16,656
FDMS4435BZ
Fairchild/ON Semiconductor

MOSFET P-CH 30V 9A POWER56

Package: 8-PowerTDFN

Stock36,012
FDU7N60NZTU
Fairchild/ON Semiconductor

MOSFET N-CH 600V SGL IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock34,068
FDS8690
Fairchild/ON Semiconductor

MOSFET N-CH 30V 14A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock785,088
FQD18N20V2TM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 15A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock185,592
FDD86113LZ
Fairchild/ON Semiconductor

MOSFET N-CH 100V 4.2A DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock27,780
FDPF680N10T
Fairchild/ON Semiconductor

MOSFET N-CH 100V 12A TO-220F

Package: TO-220-3 Full Pack

Stock18,228
FDD4141_F085
Fairchild/ON Semiconductor

MOSFET P-CH 40V 10.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,208

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FDMS7656AS	Fairchild/ON Semiconductor	MOSFET N-CH 30V POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8705pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock103,200	MOSFET (Metal Oxide)	30V	31A (Ta), 49A (Tc)	4.5V, 10V	3V @ 1mA	133nC @ 10V	8705pF @ 15V	±20V	-	2.5W (Ta), 96W (Tc)	1.8 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FDMS5360L_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 60A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3695pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,184	MOSFET (Metal Oxide)	60V	60A (Tc)	4.5V, 10V	3V @ 250µA	72nC @ 10V	3695pF @ 30V	±20V	-	150W (Tc)	8.5 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDMS9409_F085	Fairchild/ON Semiconductor	MOSFET N-CH 40V 65A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tj) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 65A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,048	MOSFET (Metal Oxide)	40V	65A (Tc)	10V	4V @ 250µA	62nC @ 10V	3130pF @ 20V	±20V	-	100W (Tj)	3.2 mOhm @ 65A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDD3690	Fairchild/ON Semiconductor	MOSFET N-CH 100V 22A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1514pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 64 mOhm @ 5.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock168,732	MOSFET (Metal Oxide)	100V	22A (Tc)	6V, 10V	4V @ 250µA	39nC @ 10V	1514pF @ 50V	±20V	-	3.8W (Ta), 60W (Tc)	64 mOhm @ 5.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS86310	Fairchild/ON Semiconductor	MOSFET N-CH 80V 17A 8-PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6290pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock24,600	MOSFET (Metal Oxide)	80V	17A (Ta), 50A (Tc)	8V, 10V	4.5V @ 250µA	95nC @ 10V	6290pF @ 40V	±20V	-	2.5W (Ta), 96W (Tc)	4.8 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FCD2250N80Z	Fairchild/ON Semiconductor	MOSFET N-CH 800V 2.6A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 2.25 Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,936	MOSFET (Metal Oxide)	800V	2.6A (Tc)	10V	4.5V @ 260µA	14nC @ 10V	585pF @ 100V	±20V	-	39W (Tc)	2.25 Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMC7660S	Fairchild/ON Semiconductor	MOSFET N-CH 30V POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4325pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock88,392	MOSFET (Metal Oxide)	30V	20A (Ta), 40A (Tc)	4.5V, 10V	2.5V @ 1mA	66nC @ 10V	4325pF @ 15V	±20V	-	2.3W (Ta), 41W (Tc)	2.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power33	8-PowerTDFN
FDMC612PZ	Fairchild/ON Semiconductor	MOSFET P-CH 20V 8-MLP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 7995pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 14A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,392	MOSFET (Metal Oxide)	20V	14A (Ta)	2.5V, 4.5V	1.5V @ 250µA	74nC @ 4.5V	7995pF @ 10V	±12V	-	2.3W (Ta), 26W (Tc)	8.4 mOhm @ 14A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
FDD6N50TM_F085	Fairchild/ON Semiconductor	MOSFET N-CH 500V 6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,440	MOSFET (Metal Oxide)	500V	6A (Tc)	10V	5V @ 250µA	16.6nC @ 10V	9400pF @ 25V	±30V	-	89W (Tc)	900 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
MTD3055VL	Fairchild/ON Semiconductor	MOSFET N-CH 60V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock56,472	MOSFET (Metal Oxide)	60V	12A (Tc)	5V	2V @ 250µA	10nC @ 5V	570pF @ 25V	±20V	-	3.9W (Ta), 48W (Tc)	180 mOhm @ 6A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
FCD5N60TM_WS	Fairchild/ON Semiconductor	MOSFET N-CH 600V 4.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,400	MOSFET (Metal Oxide)	600V	4.6A (Tc)	10V	5V @ 250µA	16nC @ 10V	600pF @ 25V	±30V	-	54W (Tc)	950 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQU5N50CTU_WS	Fairchild/ON Semiconductor	MOSFET N-CH 500V 4A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock38,502	MOSFET (Metal Oxide)	500V	4A (Tc)	10V	4V @ 250µA	24nC @ 10V	625pF @ 25V	±30V	-	2.5W (Ta), 48W (Tc)	1.4 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDMS8570S	Fairchild/ON Semiconductor	MOSFET N-CH 25V 24A 8-PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2825pF @ 13V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock16,656	MOSFET (Metal Oxide)	25V	24A (Ta), 60A (Tc)	4.5V, 10V	2.2V @ 1mA	425nC @ 10V	2825pF @ 13V	±12V	-	2.5W (Ta), 48W (Tc)	2.8 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FDMS4435BZ	Fairchild/ON Semiconductor	MOSFET P-CH 30V 9A POWER56 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock36,012	MOSFET (Metal Oxide)	30V	9A (Ta), 18A (Tc)	4.5V, 10V	3V @ 250µA	47nC @ 10V	2050pF @ 15V	±25V	-	2.5W (Ta), 39W (Tc)	20 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FDU7N60NZTU	Fairchild/ON Semiconductor	MOSFET N-CH 600V SGL IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 2.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock34,068	MOSFET (Metal Oxide)	600V	5.5A (Tc)	10V	5V @ 250µA	17nC @ 10V	730pF @ 25V	±25V	-	90W (Tc)	1.25 Ohm @ 2.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDS8690	Fairchild/ON Semiconductor	MOSFET N-CH 30V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock785,088	MOSFET (Metal Oxide)	30V	14A (Ta)	4.5V, 10V	3V @ 250µA	27nC @ 10V	1680pF @ 15V	±20V	-	2.5W (Ta)	7.6 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FQD18N20V2TM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 15A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock185,592	MOSFET (Metal Oxide)	200V	15A (Tc)	10V	5V @ 250µA	26nC @ 10V	1080pF @ 25V	±30V	-	2.5W (Ta), 83W (Tc)	140 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD86113LZ	Fairchild/ON Semiconductor	MOSFET N-CH 100V 4.2A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 29W (Tc) Rds On (Max) @ Id, Vgs: 104 mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock27,780	MOSFET (Metal Oxide)	100V	4.2A (Ta), 5.5A (Tc)	4.5V, 10V	3V @ 250µA	6nC @ 10V	285pF @ 50V	±20V	-	3.1W (Ta), 29W (Tc)	104 mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDPF680N10T	Fairchild/ON Semiconductor	MOSFET N-CH 100V 12A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 24W (Tc) Rds On (Max) @ Id, Vgs: 68 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock18,228	MOSFET (Metal Oxide)	100V	12A (Tc)	10V	4.5V @ 250µA	17nC @ 10V	1000pF @ 50V	±20V	-	24W (Tc)	68 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDD4141_F085	Fairchild/ON Semiconductor	MOSFET P-CH 40V 10.8A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2775pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 12.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,208	MOSFET (Metal Oxide)	40V	10.8A (Ta), 50A (Tc)	4.5V, 10V	3V @ 250µA	50nC @ 10V	2775pF @ 20V	±20V	-	2.4W (Ta), 69W (Tc)	12.3 mOhm @ 12.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5680	Fairchild/ON Semiconductor	MOSFET N-CH 60V 8.5A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock202,608	MOSFET (Metal Oxide)	60V	8.5A (Ta)	6V, 10V	4V @ 250µA	46nC @ 10V	1835pF @ 30V	±20V	-	2.8W (Ta), 60W (Tc)	21 mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS0302S	Fairchild/ON Semiconductor	MOSFET N-CH 30V 29A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock82,800	MOSFET (Metal Oxide)	30V	29A (Ta), 49A (Tc)	4.5V, 10V	3V @ 1mA	109nC @ 10V	7350pF @ 15V	±20V	-	2.5W (Ta), 89W (Tc)	1.9 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FDU6N50TU	Fairchild/ON Semiconductor	MOSFET N-CH 500V 6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock17,040	MOSFET (Metal Oxide)	500V	6A (Tc)	10V	5V @ 250µA	16.6nC @ 10V	940pF @ 25V	±30V	-	89W (Tc)	900 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
HUF75329D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 55V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock60,000	MOSFET (Metal Oxide)	55V	20A (Tc)	10V	4V @ 250µA	65nC @ 20V	1060pF @ 25V	±20V	-	128W (Tc)	26 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS0300S	Fairchild/ON Semiconductor	MOSFET N-CH 30V 31A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8705pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,600	MOSFET (Metal Oxide)	30V	31A (Ta), 49A (Tc)	4.5V, 10V	3V @ 1mA	133nC @ 10V	8705pF @ 15V	±20V	-	2.5W (Ta), 96W (Tc)	1.8 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FDMS7578	Fairchild/ON Semiconductor	MOSFET N-CH 25V 17A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1625pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock14,868	MOSFET (Metal Oxide)	25V	17A (Ta), 28A (Tc)	4.5V, 10V	3V @ 250µA	25nC @ 10V	1625pF @ 13V	±20V	-	2.5W (Ta), 33W (Tc)	5.8 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FQB11P06TM	Fairchild/ON Semiconductor	MOSFET P-CH 60V 11.4A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 53W (Tc) Rds On (Max) @ Id, Vgs: 175 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock31,560	MOSFET (Metal Oxide)	60V	11.4A (Tc)	10V	4V @ 250µA	17nC @ 10V	550pF @ 25V	±25V	-	3.13W (Ta), 53W (Tc)	175 mOhm @ 5.7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDMS7570S	Fairchild/ON Semiconductor	MOSFET N-CH 25V 28A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4515pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 1.95 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock150,576	MOSFET (Metal Oxide)	25V	28A (Ta), 49A (Tc)	4.5V, 10V	3V @ 1mA	69nC @ 10V	4515pF @ 13V	±20V	-	2.5W (Ta), 83W (Tc)	1.95 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN