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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 22A TO-263AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 310W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,704 |
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MOSFET (Metal Oxide) | 60V | 22A (Ta) | 10V | 4V @ 250µA | 124nC @ 10V | 6400pF @ 25V | ±20V | - | 310W (Tc) | 3.5 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 900V 7A TO-3PF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: SC-94
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Package: SC-94 |
Stock10,152 |
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MOSFET (Metal Oxide) | 900V | 7A (Tc) | 10V | 5V @ 250µA | 80nC @ 10V | 3290pF @ 25V | ±30V | - | 120W (Tc) | 1.1 Ohm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | SC-94 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 800V 14A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 1000V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 195W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock18,600 |
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MOSFET (Metal Oxide) | 800V | 14A (Tc) | 10V | 4.5V @ 1.1mA | 56nC @ 10V | 2350pF @ 1000V | ±20V | - | 195W (Tc) | 400 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 80V 80A POWER56
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8030pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Power56
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock5,728 |
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MOSFET (Metal Oxide) | 80V | 25A (Ta), 198A (Tc) | 8V, 10V | 4.5V @ 250µA | 155nC @ 10V | 8030pF @ 40V | ±20V | - | 3.3W (Ta), 187W (Tc) | 2.4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Fairchild/ON Semiconductor |
MOSFET N-CH 40V 240A H-PSOF8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7735pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tj)
- Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PSOF
- Package / Case: 8-PowerSFN
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Package: 8-PowerSFN |
Stock4,832 |
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MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 4V @ 250µA | 107nC @ 10V | 7735pF @ 25V | ±20V | - | 300W (Tj) | 1.2 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-PSOF | 8-PowerSFN |
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Fairchild/ON Semiconductor |
MOSFET N-CH 150V 8-MLP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4480pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
- Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Power56
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock3,504 |
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MOSFET (Metal Oxide) | 150V | 10A (Ta), 45A (Tc) | 6V, 10V | 4V @ 250µA | 63nC @ 10V | 4480pF @ 75V | ±20V | - | 2.7W (Ta), 113W (Tc) | 12.4 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Fairchild/ON Semiconductor |
MOSFET N-CH 150V 79A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5870pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 310W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 33A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,968 |
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MOSFET (Metal Oxide) | 150V | 79A (Tc) | 6V, 10V | 4V @ 250µA | 107nC @ 10V | 5870pF @ 25V | ±20V | - | 310W (Tc) | 16 mOhm @ 33A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 250V 51A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3410pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 25.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3 (Y-Forming)
- Package / Case: TO-220-3 Full Pack, Formed Leads
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Package: TO-220-3 Full Pack, Formed Leads |
Stock15,420 |
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MOSFET (Metal Oxide) | 250V | 51A (Tc) | 10V | 5V @ 250µA | 70nC @ 10V | 3410pF @ 25V | ±30V | - | 38W (Tc) | 60 mOhm @ 25.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 (Y-Forming) | TO-220-3 Full Pack, Formed Leads |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 14A POWER56
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3370pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Power56
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock3,200 |
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MOSFET (Metal Oxide) | 100V | 14A (Ta), 45A (Tc) | 6V, 10V | 4V @ 250µA | 50nC @ 10V | 3370pF @ 50V | ±20V | - | 2.7W (Ta), 125W (Tc) | 6 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Fairchild/ON Semiconductor |
MOSFET N-CH 40V 240A PSOF8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 188nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 357W (Tj)
- Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PSOF
- Package / Case: 8-PowerSFN
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Package: 8-PowerSFN |
Stock3,200 |
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MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 4V @ 250µA | 188nC @ 10V | 12000pF @ 25V | ±20V | - | 357W (Tj) | 0.9 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-PSOF | 8-PowerSFN |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V POWER56
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 245A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8235pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
- Rds On (Max) @ Id, Vgs: 1.65 mOhm @ 32A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Power56
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock6,080 |
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MOSFET (Metal Oxide) | 60V | 32A (Ta), 245A (Tc) | 8V, 10V | 4.5V @ 250µA | 154nC @ 10V | 8235pF @ 30V | ±20V | - | 3.3W (Ta), 187W (Tc) | 1.65 mOhm @ 32A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Fairchild/ON Semiconductor |
MOSFET N-CH 40V 47A 8PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 242nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 17500pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
- Rds On (Max) @ Id, Vgs: 0.85 mOhm @ 47A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Power56
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock3,792 |
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MOSFET (Metal Oxide) | 40V | 47A (Ta), 200A (Tc) | 4.5V, 10V | 3V @ 250µA | 242nC @ 10V | 17500pF @ 20V | ±20V | - | 2.7W (Ta), 113W (Tc) | 0.85 mOhm @ 47A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Fairchild/ON Semiconductor |
MOSFET N-CH 250V 4A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5690pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 403W (Tc)
- Rds On (Max) @ Id, Vgs: 47 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock23,988 |
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MOSFET (Metal Oxide) | 250V | 4A (Ta) | 10V | 5V @ 250µA | 101nC @ 10V | 5690pF @ 25V | ±30V | - | 403W (Tc) | 47 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 500V 15A TO-263AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 7.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock442,440 |
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MOSFET (Metal Oxide) | 500V | 15A (Tc) | 10V | 4V @ 250µA | 41nC @ 10V | 1850pF @ 25V | ±30V | - | 300W (Tc) | 380 mOhm @ 7.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 80V 90A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 45A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
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Package: TO-3P-3, SC-65-3 |
Stock247,464 |
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MOSFET (Metal Oxide) | 80V | 90A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 3250pF @ 25V | ±25V | - | 214W (Tc) | 16 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Fairchild/ON Semiconductor |
MOSFET N CH 600V 15A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 260 mOhm @ 7.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock6,336 |
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MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 3.5V @ 250µA | 62nC @ 10V | 2500pF @ 25V | ±20V | - | 156W (Tc) | 260 mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 77A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5690pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 44.1W (Tc)
- Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 77A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock7,744 |
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MOSFET (Metal Oxide) | 60V | 77A (Tc) | 10V | 4V @ 250µA | 69nC @ 10V | 5690pF @ 30V | ±20V | - | 44.1W (Tc) | 4.1 mOhm @ 77A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V 12A POWER88
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1948pF @ 380V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 299 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Power88
- Package / Case: 4-PowerTSFN
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Package: 4-PowerTSFN |
Stock2,784 |
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MOSFET (Metal Oxide) | 600V | 12A (Ta) | 10V | 3.5V @ 250µA | 51nC @ 10V | 1948pF @ 380V | ±20V | - | 125W (Tc) | 299 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power88 | 4-PowerTSFN |
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Fairchild/ON Semiconductor |
MOSFET N-CH 80V 240A PSOF8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 169nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 357W (Tj)
- Rds On (Max) @ Id, Vgs: 2 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PSOF
- Package / Case: 8-PowerSFN
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Package: 8-PowerSFN |
Stock4,384 |
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MOSFET (Metal Oxide) | 80V | 240A (Tc) | 10V | 4V @ 250µA | 169nC @ 10V | 10000pF @ 40V | ±20V | - | 357W (Tj) | 2 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-PSOF | 8-PowerSFN |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 240A PSOF8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 169nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 357W (Tj)
- Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PSOF
- Package / Case: 8-PowerSFN
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Package: 8-PowerSFN |
Stock6,880 |
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MOSFET (Metal Oxide) | 60V | 240A (Tc) | 10V | 4V @ 250µA | 169nC @ 10V | 10300pF @ 30V | ±20V | - | 357W (Tj) | 1.5 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-PSOF | 8-PowerSFN |
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Fairchild/ON Semiconductor |
MOSFET N-CH 250V 25.5A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 25.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.13W (Ta), 417W (Tc)
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK (TO-262)
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock17,592 |
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MOSFET (Metal Oxide) | 250V | 25.5A (Tc) | 10V | 5V @ 250µA | 65nC @ 10V | 1800pF @ 25V | ±30V | - | 3.13W (Ta), 417W (Tc) | 110 mOhm @ 12.75A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 40V 110A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 245nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 333W (Tj)
- Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,224 |
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MOSFET (Metal Oxide) | 40V | 110A (Tc) | 10V | 3V @ 250µA | 245nC @ 10V | 13500pF @ 20V | ±20V | - | 333W (Tj) | 1.2 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 500V 20A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3390pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 260 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,560 |
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MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 5V @ 250µA | 65nC @ 10V | 3390pF @ 25V | ±30V | - | 250W (Tc) | 260 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 40V 110A TO263AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 213nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 333W (Tj)
- Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,232 |
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MOSFET (Metal Oxide) | 40V | 110A (Tc) | 10V | 4V @ 250µA | 213nC @ 10V | 12700pF @ 25V | ±20V | - | 333W (Tj) | 1.2 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 150V 92A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4510pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 234W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 92A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,824 |
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MOSFET (Metal Oxide) | 150V | 92A (Tc) | 10V | 4V @ 250µA | 61nC @ 10V | 4510pF @ 75V | ±20V | - | 234W (Tc) | 11 mOhm @ 92A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V 11A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock49,920 |
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MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 5V @ 250µA | 52nC @ 10V | 1490pF @ 25V | ±30V | - | 125W (Tc) | 380 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 55A 8-PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 750µA
- Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 22610pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 180W (Tc)
- Rds On (Max) @ Id, Vgs: 0.65 mOhm @ 55A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Power56
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock6,352 |
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MOSFET (Metal Oxide) | 30V | 55A (Ta), 423A (Tc) | 4.5V, 10V | 3V @ 750µA | 285nC @ 10V | 22610pF @ 15V | ±20V | - | 3.3W (Ta), 180W (Tc) | 0.65 mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V TO-220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 199 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock390,000 |
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MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 3.5V @ 250µA | 74nC @ 10V | 2950pF @ 25V | ±20V | - | 208W (Tc) | 199 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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