Page 36 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FCP104N60F
Fairchild/ON Semiconductor

MOSFET N-CH 600V TO-220

Package: TO-220-3

Stock12,060
FCH104N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 37A TO247

Package: TO-247-3

Stock104,304
FDB0260N1007L
Fairchild/ON Semiconductor

MOSFET N-CH 100V 200A D2PAK

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock4,256
FDH038AN08A1
Fairchild/ON Semiconductor

MOSFET N-CH 75V 80A TO-247

Package: TO-247-3

Stock131,052
FCP25N60N_F102
Fairchild/ON Semiconductor

MOSFET N-CH 600V 25A TO220-3

Package: TO-220-3

Stock19,992
FCI25N60N_F102
Fairchild/ON Semiconductor

MOSFET N-CH 600V 25A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock21,588
FCH110N65F_F155
Fairchild/ON Semiconductor

MOSFET N-CH 650V 35A TO247

Package: TO-247-3

Stock8,112
FQA160N08
Fairchild/ON Semiconductor

MOSFET N-CH 80V 160A TO-3P

Package: TO-3P-3, SC-65-3

Stock4,640
FCH35N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 35A TO-247

Package: TO-247-3

Stock108,192
FQL40N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 40A TO-264

Package: TO-264-3, TO-264AA

Stock160,248
FDB0630N1507L
Fairchild/ON Semiconductor

MOSFET N-CH 150V 130A

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock4,368
FQA44N30
Fairchild/ON Semiconductor

MOSFET N-CH 300V 43.5A TO-3P

Package: TO-3P-3, SC-65-3

Stock5,856
FDMT800100DC
Fairchild/ON Semiconductor

MOSFET N-CH 100V 24A

Package: 8-PowerVDFN

Stock6,496
FDMT800150DC
Fairchild/ON Semiconductor

MOSFET N-CH 150V 15A

Package: 8-PowerVDFN

Stock3,696
FDMT800152DC
Fairchild/ON Semiconductor

MOSFET N-CH 100V 13A

Package: 8-PowerVDFN

Stock5,552
FCP110N65F
Fairchild/ON Semiconductor

MOSFET N-CH 650V 35A TO220

Package: TO-220-3

Stock15,972
FCA20N60F
Fairchild/ON Semiconductor

MOSFET N-CH 600V 20A TO-3PN

Package: TO-3P-3, SC-65-3

Stock92,760
FCH125N60E
Fairchild/ON Semiconductor

MOSFET N-CH 600V 29A TO247

Package: TO-247-3

Stock103,464
FCH104N60F_F085
Fairchild/ON Semiconductor

MOSFET N-CH 600V 37A TO247

Package: TO-247-3

Stock11,112
FCP099N60E
Fairchild/ON Semiconductor

MOSFET N-CH 600V TO220

Package: TO-220-3

Stock7,992

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FCP104N60F	Fairchild/ON Semiconductor	MOSFET N-CH 600V TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6130pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 104 mOhm @ 18.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock12,060	MOSFET (Metal Oxide)	600V	37A (Tc)	10V	5V @ 250µA	145nC @ 10V	6130pF @ 25V	±20V	-	357W (Tc)	104 mOhm @ 18.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FCH104N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 37A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4165pF @ 380V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 104 mOhm @ 18.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock104,304	MOSFET (Metal Oxide)	600V	37A (Tc)	10V	3.5V @ 250µA	82nC @ 10V	4165pF @ 380V	±20V	-	357W (Tc)	104 mOhm @ 18.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FDB0260N1007L	Fairchild/ON Semiconductor	MOSFET N-CH 100V 200A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8545pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 27A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock4,256	MOSFET (Metal Oxide)	100V	200A (Tc)	10V	4V @ 250µA	118nC @ 10V	8545pF @ 50V	±20V	-	3.8W (Ta), 250W (Tc)	2.6 mOhm @ 27A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
FDH038AN08A1	Fairchild/ON Semiconductor	MOSFET N-CH 75V 80A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8665pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock131,052	MOSFET (Metal Oxide)	75V	22A (Ta), 80A (Tc)	6V, 10V	4V @ 250µA	160nC @ 10V	8665pF @ 25V	±20V	-	450W (Tc)	3.8 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
FCP25N60N_F102	Fairchild/ON Semiconductor	MOSFET N-CH 600V 25A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3352pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 216W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock19,992	MOSFET (Metal Oxide)	600V	25A (Tc)	10V	4V @ 250µA	74nC @ 10V	3352pF @ 100V	±30V	-	216W (Tc)	125 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
FCI25N60N_F102	Fairchild/ON Semiconductor	MOSFET N-CH 600V 25A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3352pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 216W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock21,588	MOSFET (Metal Oxide)	600V	25A (Tc)	10V	4V @ 250µA	74nC @ 10V	3352pF @ 100V	±30V	-	216W (Tc)	125 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
FCH110N65F_F155	Fairchild/ON Semiconductor	MOSFET N-CH 650V 35A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 3.5mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4895pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: TO-247-3	Stock8,112	MOSFET (Metal Oxide)	650V	35A (Tc)	10V	5V @ 3.5mA	145nC @ 10V	4895pF @ 100V	±20V	-	357W (Tc)	110 mOhm @ 17.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3
FQA160N08	Fairchild/ON Semiconductor	MOSFET N-CH 80V 160A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7900pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock4,640	MOSFET (Metal Oxide)	80V	160A (Tc)	10V	4V @ 250µA	290nC @ 10V	7900pF @ 25V	±25V	-	375W (Tc)	7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FCH35N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 35A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6640pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 312.5W (Tc) Rds On (Max) @ Id, Vgs: 98 mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock108,192	MOSFET (Metal Oxide)	600V	35A (Tc)	10V	5V @ 250µA	181nC @ 10V	6640pF @ 25V	±30V	-	312.5W (Tc)	98 mOhm @ 17.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
FQL40N50	Fairchild/ON Semiconductor	MOSFET N-CH 500V 40A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock160,248	MOSFET (Metal Oxide)	500V	40A (Tc)	10V	5V @ 250µA	200nC @ 10V	7500pF @ 25V	±30V	-	460W (Tc)	110 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
FDB0630N1507L	Fairchild/ON Semiconductor	MOSFET N-CH 150V 130A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9895pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock4,368	MOSFET (Metal Oxide)	150V	130A (Tc)	10V	4V @ 250µA	135nC @ 10V	9895pF @ 75V	±20V	-	3.8W (Ta), 300W (Tc)	6.4 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-7, D2Pak (6 Leads + Tab)
FQA44N30	Fairchild/ON Semiconductor	MOSFET N-CH 300V 43.5A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 69 mOhm @ 21.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,856	MOSFET (Metal Oxide)	300V	43.5A (Tc)	10V	5V @ 250µA	150nC @ 10V	5600pF @ 25V	±30V	-	310W (Tc)	69 mOhm @ 21.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FDMT800100DC	Fairchild/ON Semiconductor	MOSFET N-CH 100V 24A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7835pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 2.95 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-Dual Cool?88 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,496	MOSFET (Metal Oxide)	100V	24A (Ta), 162A (Tc)	6V, 10V	4V @ 250µA	111nC @ 10V	7835pF @ 50V	±20V	-	3.2W (Ta), 156W (Tc)	2.95 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-Dual Cool?88	8-PowerVDFN
FDMT800150DC	Fairchild/ON Semiconductor	MOSFET N-CH 150V 15A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8205pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-Dual Cool?88 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,696	MOSFET (Metal Oxide)	150V	15A (Ta), 99A (Tc)	6V, 10V	4V @ 250µA	108nC @ 10V	8205pF @ 75V	±20V	-	3.2W (Ta), 156W (Tc)	6.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-Dual Cool?88	8-PowerVDFN
FDMT800152DC	Fairchild/ON Semiconductor	MOSFET N-CH 100V 13A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 113W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-Dual Cool?88 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,552	MOSFET (Metal Oxide)	100V	13A (Ta), 72A (Tc)	6V, 10V	4V @ 250µA	83nC @ 10V	5875pF @ 75V	±20V	-	3.2W (Ta), 113W (Tc)	9 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-Dual Cool?88	8-PowerVDFN
FCP110N65F	Fairchild/ON Semiconductor	MOSFET N-CH 650V 35A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 3.5mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4895pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock15,972	MOSFET (Metal Oxide)	650V	35A (Tc)	10V	5V @ 3.5mA	145nC @ 10V	4895pF @ 100V	±20V	-	357W (Tc)	110 mOhm @ 17.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FCA20N60F	Fairchild/ON Semiconductor	MOSFET N-CH 600V 20A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock92,760	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 250µA	98nC @ 10V	3080pF @ 25V	±30V	-	208W (Tc)	190 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FCH125N60E	Fairchild/ON Semiconductor	MOSFET N-CH 600V 29A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2990pF @ 380V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock103,464	MOSFET (Metal Oxide)	600V	29A (Tc)	10V	3.5V @ 250µA	95nC @ 10V	2990pF @ 380V	±20V	-	278W (Tc)	125 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FCH104N60F_F085	Fairchild/ON Semiconductor	MOSFET N-CH 600V 37A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4302pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 104 mOhm @ 18.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock11,112	MOSFET (Metal Oxide)	600V	37A (Tc)	10V	5V @ 250µA	139nC @ 10V	4302pF @ 100V	±20V	-	357W (Tc)	104 mOhm @ 18.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FCP099N60E	Fairchild/ON Semiconductor	MOSFET N-CH 600V TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3465pF @ 380V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 18.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,992	MOSFET (Metal Oxide)	600V	37A (Tc)	10V	3.5V @ 250µA	114nC @ 10V	3465pF @ 380V	±20V	-	357W (Tc)	99 mOhm @ 18.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
FCB070N65S3	Fairchild/ON Semiconductor	MOSFET N-CH 650V 44A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 400V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,704	MOSFET (Metal Oxide)	650V	44A (Tc)	10V	4.5V @ 4.4mA	78nC @ 10V	3090pF @ 400V	±30V	-	312W (Tc)	70 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FCPF067N65S3	Fairchild/ON Semiconductor	MOSFET N-CH 650V 44A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 400V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 67 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock22,860	MOSFET (Metal Oxide)	650V	44A (Tc)	10V	4.5V @ 4.4mA	78nC @ 10V	3090pF @ 400V	±30V	-	46W (Tc)	67 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FCH130N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 28A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3590pF @ 380V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock103,464	MOSFET (Metal Oxide)	600V	28A (Tc)	10V	3.5V @ 250µA	70nC @ 10V	3590pF @ 380V	±20V	-	278W (Tc)	130 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FDB0170N607L	Fairchild/ON Semiconductor	MOSFET N-CH 60V 300A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 243nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19250pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 39A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: - Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock5,360	MOSFET (Metal Oxide)	60V	300A (Tc)	10V	4V @ 250µA	243nC @ 10V	19250pF @ 30V	±20V	-	3.8W (Ta), 250W (Tc)	1.4 mOhm @ 39A, 10V	-55°C ~ 175°C (TJ)	-	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
FDB0165N807L	Fairchild/ON Semiconductor	MOSFET N-CH 80V 310A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 310A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 304nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23660pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 36A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock6,256	MOSFET (Metal Oxide)	80V	310A (Tc)	10V	4V @ 250µA	304nC @ 10V	23660pF @ 40V	±20V	-	3.8W (Ta), 300W (Tc)	1.6 mOhm @ 36A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-7, D2Pak (6 Leads + Tab)
FCB20N60_F085	Fairchild/ON Semiconductor	MOSFET N-CH 600V 20A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 341W (Tc) Rds On (Max) @ Id, Vgs: 198 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,024	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 250µA	102nC @ 10V	3080pF @ 25V	±30V	-	341W (Tc)	198 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA75852G3_F085	Fairchild/ON Semiconductor	MOSFET N-CH 150V 75A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 480nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 7690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,448	MOSFET (Metal Oxide)	150V	75A (Tc)	10V	4V @ 250µA	480nC @ 20V	7690pF @ 25V	±20V	-	500W (Tc)	16 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
FDBL0210N80	Fairchild/ON Semiconductor	MOSFET N-CH 80V 240A H-PSOF8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 169nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tj) Rds On (Max) @ Id, Vgs: 2 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOF Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock6,784	MOSFET (Metal Oxide)	80V	240A (Tc)	10V	4V @ 250µA	169nC @ 10V	10000pF @ 40V	±20V	-	357W (Tj)	2 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PSOF	8-PowerSFN