Page 37 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FCH060N80_F155
Fairchild/ON Semiconductor

MOSFET N-CH 800V 56A TO247

Package: TO-247-3

Stock10,248
FCH023N65S3L4
Fairchild/ON Semiconductor

MOSFET N-CH 650V 75A TO247

Package: TO-247-4

Stock10,896
FCH085N80_F155
Fairchild/ON Semiconductor

MOSFET N-CH 800V 46A TO247

Package: TO-247-3

Stock10,836
FCH041N65EFL4
Fairchild/ON Semiconductor

MOSFET N-CH 650V 76A

Package: TO-247-4

Stock10,668
FCH041N65EF_F155
Fairchild/ON Semiconductor

MOSFET N-CH 650V 76A TO247

Package: TO-247-3

Stock7,704
FCH47N60F_F085
Fairchild/ON Semiconductor

MOSFET N-CH 600V 47A TO-247

Package: TO-247-3

Stock10,200
FCH76N60NF
Fairchild/ON Semiconductor

MOSFET N-CH 600V 72.8A TO247-3

Package: TO-247-3

Stock392,868
FCH041N65F_F155
Fairchild/ON Semiconductor

MOSFET N-CH 650V 76A TO247

Package: TO-247-3

Stock9,612
FCH041N65F_F085
Fairchild/ON Semiconductor

MOSFET N-CH 650V 76A TO247

Package: TO-247-3

Stock7,248
FCH041N60F_F085
Fairchild/ON Semiconductor

MOSFET N CH 600V 76A TO247

Package: TO-247-3

Stock6,780
FCH47N60_F085
Fairchild/ON Semiconductor

MOSFET N-CH 600V 47A TO-247

Package: TO-247-3

Stock10,188
FQL40N50F
Fairchild/ON Semiconductor

MOSFET N-CH 500V 40A TO-264

Package: TO-264-3, TO-264AA

Stock103,584
FCA36N60NF
Fairchild/ON Semiconductor

MOSFET N-CH 600V 34.9A TO3PN

Package: TO-3P-3, SC-65-3

Stock103,464
FCH077N65F_F155
Fairchild/ON Semiconductor

MOSFET N-CH 650V 54A TO247

Package: TO-247-3

Stock6,792
FCPF36N60NT
Fairchild/ON Semiconductor

MOSFET N-CH 600V 36A TO220F

Package: TO-220-3 Full Pack

Stock17,568
FCH067N65S3_F155
Fairchild/ON Semiconductor

MOSFET N-CH 650V 44A TO247

Package: TO-247-3

Stock6,972
FCH072N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 52A TO247

Package: TO-247-3

Stock104,244
FCA35N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 35A TO-3PN

Package: TO-3P-3, SC-65-3

Stock103,716
FCH47N60_F133
Fairchild/ON Semiconductor

MOSFET N-CH 600V 47A TO-247

Package: TO-247-3

Stock14,880
FCH070N60E
Fairchild/ON Semiconductor

MOSFET N-CH 600V 52A

Package: TO-247-3

Stock103,824

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FCH060N80_F155	Fairchild/ON Semiconductor	MOSFET N-CH 800V 56A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 5.8mA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14685pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: TO-247-3	Stock10,248	MOSFET (Metal Oxide)	800V	56A (Tc)	10V	4.5V @ 5.8mA	350nC @ 10V	14685pF @ 100V	±20V	Super Junction	500W (Tc)	60 mOhm @ 29A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3
FCH023N65S3L4	Fairchild/ON Semiconductor	MOSFET N-CH 650V 75A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 7.5mA Gate Charge (Qg) (Max) @ Vgs: 222nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7160pF @ 400V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 595W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 37.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-4	Package: TO-247-4	Stock10,896	MOSFET (Metal Oxide)	650V	75A (Tc)	10V	4.5V @ 7.5mA	222nC @ 10V	7160pF @ 400V	±30V	-	595W (Tc)	23 mOhm @ 37.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-4
FCH085N80_F155	Fairchild/ON Semiconductor	MOSFET N-CH 800V 46A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4.6mA Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10825pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock10,836	MOSFET (Metal Oxide)	800V	46A (Tc)	10V	4.5V @ 4.6mA	255nC @ 10V	10825pF @ 100V	±20V	Super Junction	446W (Tc)	85 mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FCH041N65EFL4	Fairchild/ON Semiconductor	MOSFET N-CH 650V 76A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 7.6mA Gate Charge (Qg) (Max) @ Vgs: 298nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12560pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 595W (Tc) Rds On (Max) @ Id, Vgs: 41 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: TO-247-4	Stock10,668	MOSFET (Metal Oxide)	650V	76A (Tc)	10V	5V @ 7.6mA	298nC @ 10V	12560pF @ 100V	±20V	-	595W (Tc)	41 mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-4L	TO-247-4
FCH041N65EF_F155	Fairchild/ON Semiconductor	MOSFET N-CH 650V 76A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 7.6mA Gate Charge (Qg) (Max) @ Vgs: 298nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12560pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 595W (Tc) Rds On (Max) @ Id, Vgs: 41 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: TO-247-3	Stock7,704	MOSFET (Metal Oxide)	650V	76A (Tc)	10V	5V @ 7.6mA	298nC @ 10V	12560pF @ 100V	±20V	Super Junction	595W (Tc)	41 mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3
FCH47N60F_F085	Fairchild/ON Semiconductor	MOSFET N-CH 600V 47A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 47A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock10,200	MOSFET (Metal Oxide)	600V	47A (Tc)	10V	5V @ 250µA	250nC @ 10V	8000pF @ 25V	±30V	-	417W (Tc)	75 mOhm @ 47A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FCH76N60NF	Fairchild/ON Semiconductor	MOSFET N-CH 600V 72.8A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11045pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 38 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock392,868	MOSFET (Metal Oxide)	600V	72.8A (Tc)	10V	5V @ 250µA	300nC @ 10V	11045pF @ 100V	±30V	-	543W (Tc)	38 mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FCH041N65F_F155	Fairchild/ON Semiconductor	MOSFET N-CH 650V 76A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 7.6mA Gate Charge (Qg) (Max) @ Vgs: 294nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13020pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 595W (Tc) Rds On (Max) @ Id, Vgs: 41 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: TO-247-3	Stock9,612	MOSFET (Metal Oxide)	650V	76A (Tc)	10V	5V @ 7.6mA	294nC @ 10V	13020pF @ 100V	±20V	-	595W (Tc)	41 mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3
FCH041N65F_F085	Fairchild/ON Semiconductor	MOSFET N-CH 650V 76A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 304nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13566pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 595W (Tc) Rds On (Max) @ Id, Vgs: 41 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,248	MOSFET (Metal Oxide)	650V	76A (Tc)	10V	5V @ 250µA	304nC @ 10V	13566pF @ 25V	±20V	-	595W (Tc)	41 mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FCH041N60F_F085	Fairchild/ON Semiconductor	MOSFET N CH 600V 76A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 347nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 595W (Tc) Rds On (Max) @ Id, Vgs: 41 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,780	MOSFET (Metal Oxide)	600V	76A (Tc)	10V	5V @ 250µA	347nC @ 10V	10900pF @ 25V	±20V	-	595W (Tc)	41 mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FCH47N60_F085	Fairchild/ON Semiconductor	MOSFET N-CH 600V 47A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 79 mOhm @ 47A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock10,188	MOSFET (Metal Oxide)	600V	47A (Tc)	10V	5V @ 250µA	250nC @ 10V	8000pF @ 25V	±30V	-	417W (Tc)	79 mOhm @ 47A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FQL40N50F	Fairchild/ON Semiconductor	MOSFET N-CH 500V 40A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock103,584	MOSFET (Metal Oxide)	500V	40A (Tc)	10V	5V @ 250µA	200nC @ 10V	7500pF @ 25V	±30V	-	460W (Tc)	110 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
FCA36N60NF	Fairchild/ON Semiconductor	MOSFET N-CH 600V 34.9A TO3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4245pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock103,464	MOSFET (Metal Oxide)	600V	34.9A (Tc)	10V	5V @ 250µA	112nC @ 10V	4245pF @ 100V	±30V	-	312W (Tc)	95 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FCH077N65F_F155	Fairchild/ON Semiconductor	MOSFET N-CH 650V 54A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 5.4mA Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7109pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 481W (Tc) Rds On (Max) @ Id, Vgs: 77 mOhm @ 27A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: TO-247-3	Stock6,792	MOSFET (Metal Oxide)	650V	54A (Tc)	10V	5V @ 5.4mA	164nC @ 10V	7109pF @ 100V	±20V	-	481W (Tc)	77 mOhm @ 27A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3
FCPF36N60NT	Fairchild/ON Semiconductor	MOSFET N-CH 600V 36A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4785pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 90 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock17,568	MOSFET (Metal Oxide)	600V	36A (Tc)	10V	4V @ 250µA	112nC @ 10V	4785pF @ 100V	±30V	-	-	90 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
FCH067N65S3_F155	Fairchild/ON Semiconductor	MOSFET N-CH 650V 44A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 400V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 67 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: TO-247-3	Stock6,972	MOSFET (Metal Oxide)	650V	44A (Tc)	10V	4.5V @ 4.4mA	78nC @ 10V	3090pF @ 400V	±30V	Super Junction	312W (Tc)	67 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3
FCH072N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 52A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 380V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 481W (Tc) Rds On (Max) @ Id, Vgs: 72 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock104,244	MOSFET (Metal Oxide)	600V	52A (Tc)	10V	3.5V @ 250µA	125nC @ 10V	5890pF @ 380V	±20V	-	481W (Tc)	72 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FCA35N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 35A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6640pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 312.5W (Tc) Rds On (Max) @ Id, Vgs: 98 mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock103,716	MOSFET (Metal Oxide)	600V	35A (Tc)	10V	5V @ 250µA	181nC @ 10V	6640pF @ 25V	±30V	-	312.5W (Tc)	98 mOhm @ 17.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FCH47N60_F133	Fairchild/ON Semiconductor	MOSFET N-CH 600V 47A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 23.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock14,880	MOSFET (Metal Oxide)	600V	47A (Tc)	10V	5V @ 250µA	270nC @ 10V	8000pF @ 25V	±30V	-	417W (Tc)	70 mOhm @ 23.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FCH070N60E	Fairchild/ON Semiconductor	MOSFET N-CH 600V 52A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 166nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4925pF @ 380V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 481W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: TO-247-3	Stock103,824	MOSFET (Metal Oxide)	600V	52A (Tc)	10V	3.5V @ 250µA	166nC @ 10V	4925pF @ 380V	±20V	-	481W (Tc)	70 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3
FCH077N65F_F085	Fairchild/ON Semiconductor	MOSFET N-CH 650V 54A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7162pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 481W (Tc) Rds On (Max) @ Id, Vgs: 77 mOhm @ 27A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock8,508	MOSFET (Metal Oxide)	650V	54A (Tc)	10V	5V @ 250µA	164nC @ 10V	7162pF @ 25V	±20V	-	481W (Tc)	77 mOhm @ 27A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FCH25N60N	Fairchild/ON Semiconductor	MOSFET N-CH 600V 25A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3352pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 216W (Tc) Rds On (Max) @ Id, Vgs: 126 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock72,000	MOSFET (Metal Oxide)	600V	25A (Tc)	10V	4V @ 250µA	74nC @ 10V	3352pF @ 100V	±30V	-	216W (Tc)	126 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FCH072N60F_F085	Fairchild/ON Semiconductor	MOSFET N-CH 600V 52A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6330pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 481W (Tc) Rds On (Max) @ Id, Vgs: 72 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock10,320	MOSFET (Metal Oxide)	600V	52A (Tc)	10V	5V @ 250µA	210nC @ 10V	6330pF @ 100V	±20V	-	481W (Tc)	72 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FDH210N08	Fairchild/ON Semiconductor	MOSFET N-CH 75V 210A TO-247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 462W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,368	MOSFET (Metal Oxide)	75V	-	10V	-	-	-	±20V	-	462W (Tc)	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
HUF75852G3	Fairchild/ON Semiconductor	MOSFET N-CH 150V 75A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 480nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 7690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock8,628	MOSFET (Metal Oxide)	150V	75A (Tc)	10V	4V @ 250µA	480nC @ 20V	7690pF @ 25V	±20V	-	500W (Tc)	16 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
FCB110N65F	Fairchild/ON Semiconductor	MOSFET N-CH 650V 35A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 3.5mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4895pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,464	MOSFET (Metal Oxide)	650V	35A (Tc)	10V	5V @ 3.5mA	145nC @ 10V	4895pF @ 100V	±20V	-	357W (Tc)	110 mOhm @ 17.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FCP220N80	Fairchild/ON Semiconductor	MOSFET N-CH 800V 23A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 2.3mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock19,584	MOSFET (Metal Oxide)	800V	23A (Tc)	10V	4.5V @ 2.3mA	105nC @ 10V	4560pF @ 100V	±20V	-	278W (Tc)	220 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
FDB86135	Fairchild/ON Semiconductor	MOSFET N-CH 100V D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7295pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 227W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,208	MOSFET (Metal Oxide)	100V	75A (Tc)	10V	4V @ 250µA	116nC @ 10V	7295pF @ 25V	±20V	-	2.4W (Ta), 227W (Tc)	3.5 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB