Page 68 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FQU13N10TU
Fairchild/ON Semiconductor

MOSFET N-CH 100V 10A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,792
FQD3P20TM
Fairchild/ON Semiconductor

MOSFET P-CH 200V 2.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,168
FQPF4N25
Fairchild/ON Semiconductor

MOSFET N-CH 250V 2.8A TO-220F

Package: TO-220-3 Full Pack

Stock7,184
IRLR210ATF
Fairchild/ON Semiconductor

MOSFET N-CH 200V 2.7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,912
FDZ293P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 4.6A BGA

Package: 9-VFBGA

Stock825,804
FQP4N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.6A TO-220

Package: TO-220-3

Stock48,000
FQD4N20TF
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock120,012
FQPF13N10L
Fairchild/ON Semiconductor

MOSFET N-CH 100V 8.7A TO-220F

Package: TO-220-3 Full Pack

Stock7,376
FQD3P20TF
Fairchild/ON Semiconductor

MOSFET P-CH 200V 2.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,232
FQD1N50TM
Fairchild/ON Semiconductor

MOSFET N-CH 500V 1.1A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,352
FQU13N06TU
Fairchild/ON Semiconductor

MOSFET N-CH 60V 10A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,296
FQD1N50TF
Fairchild/ON Semiconductor

MOSFET N-CH 500V 1.1A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,688
FQD13N06LTF
Fairchild/ON Semiconductor

MOSFET N-CH 60V 11A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock302,400
FQPF5P10
Fairchild/ON Semiconductor

MOSFET P-CH 100V 2.9A TO-220F

Package: TO-220-3 Full Pack

Stock3,216
FQP7N20L
Fairchild/ON Semiconductor

MOSFET N-CH 200V 6.5A TO-220

Package: TO-220-3

Stock128,460
FQP9N08
Fairchild/ON Semiconductor

MOSFET N-CH 80V 9.3A TO-220

Package: TO-220-3

Stock139,224
FQD5N20LTF
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,352
IRLR110ATM
Fairchild/ON Semiconductor

MOSFET N-CH 100V 4.7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,064
FQD7N20LTF
Fairchild/ON Semiconductor

MOSFET N-CH 200V 5.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock36,180
FQPF6N25
Fairchild/ON Semiconductor

MOSFET N-CH 250V 4A TO-220F

Package: TO-220-3 Full Pack

Stock35,400

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FQU13N10TU	Fairchild/ON Semiconductor	MOSFET N-CH 100V 10A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,792	MOSFET (Metal Oxide)	100V	10A (Tc)	10V	4V @ 250µA	16nC @ 10V	450pF @ 25V	±25V	-	2.5W (Ta), 40W (Tc)	180 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FQD3P20TM	Fairchild/ON Semiconductor	MOSFET P-CH 200V 2.4A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,168	MOSFET (Metal Oxide)	200V	2.4A (Tc)	10V	5V @ 250µA	8nC @ 10V	250pF @ 25V	±30V	-	2.5W (Ta), 37W (Tc)	2.7 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQPF4N25	Fairchild/ON Semiconductor	MOSFET N-CH 250V 2.8A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,184	MOSFET (Metal Oxide)	250V	2.8A (Tc)	10V	5V @ 250µA	5.6nC @ 10V	200pF @ 25V	±30V	-	32W (Tc)	1.75 Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IRLR210ATF	Fairchild/ON Semiconductor	MOSFET N-CH 200V 2.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 21W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.35A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,912	MOSFET (Metal Oxide)	200V	2.7A (Tc)	5V	2V @ 250µA	9nC @ 5V	240pF @ 25V	±20V	-	2.5W (Ta), 21W (Tc)	1.5 Ohm @ 1.35A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDZ293P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 4.6A BGA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 754pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 9-BGA (1.5x1.6) Package / Case: 9-VFBGA	Package: 9-VFBGA	Stock825,804	MOSFET (Metal Oxide)	20V	4.6A (Ta)	2.5V, 4.5V	1.5V @ 250µA	11nC @ 4.5V	754pF @ 10V	±12V	-	1.7W (Ta)	46 mOhm @ 4.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	9-BGA (1.5x1.6)	9-VFBGA
FQP4N20	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3.6A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock48,000	MOSFET (Metal Oxide)	200V	3.6A (Tc)	10V	5V @ 250µA	6.5nC @ 10V	220pF @ 25V	±30V	-	45W (Tc)	1.4 Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQD4N20TF	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock120,012	MOSFET (Metal Oxide)	200V	3A (Tc)	10V	5V @ 250µA	6.5nC @ 10V	220pF @ 25V	±30V	-	2.5W (Ta), 30W (Tc)	1.4 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQPF13N10L	Fairchild/ON Semiconductor	MOSFET N-CH 100V 8.7A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 4.35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,376	MOSFET (Metal Oxide)	100V	8.7A (Tc)	5V, 10V	4V @ 250µA	12nC @ 5V	520pF @ 25V	±20V	-	30W (Tc)	180 mOhm @ 4.35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQD3P20TF	Fairchild/ON Semiconductor	MOSFET P-CH 200V 2.4A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,232	MOSFET (Metal Oxide)	200V	2.4A (Tc)	10V	5V @ 250µA	8nC @ 10V	250pF @ 25V	±30V	-	2.5W (Ta), 37W (Tc)	2.7 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD1N50TM	Fairchild/ON Semiconductor	MOSFET N-CH 500V 1.1A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 9 Ohm @ 550mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,352	MOSFET (Metal Oxide)	500V	1.1A (Tc)	10V	5V @ 250µA	5.5nC @ 10V	150pF @ 25V	±30V	-	2.5W (Ta), 25W (Tc)	9 Ohm @ 550mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQU13N06TU	Fairchild/ON Semiconductor	MOSFET N-CH 60V 10A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,296	MOSFET (Metal Oxide)	60V	10A (Tc)	10V	4V @ 250µA	7.5nC @ 10V	310pF @ 25V	±25V	-	2.5W (Ta), 28W (Tc)	140 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FQD1N50TF	Fairchild/ON Semiconductor	MOSFET N-CH 500V 1.1A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 9 Ohm @ 550mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,688	MOSFET (Metal Oxide)	500V	1.1A (Tc)	10V	5V @ 250µA	5.5nC @ 10V	150pF @ 25V	±30V	-	2.5W (Ta), 25W (Tc)	9 Ohm @ 550mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD13N06LTF	Fairchild/ON Semiconductor	MOSFET N-CH 60V 11A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 115 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock302,400	MOSFET (Metal Oxide)	60V	11A (Tc)	5V, 10V	2.5V @ 250µA	6.4nC @ 5V	350pF @ 25V	±20V	-	2.5W (Ta), 28W (Tc)	115 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQPF5P10	Fairchild/ON Semiconductor	MOSFET P-CH 100V 2.9A TO-220F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 23W (Tc) Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 1.45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,216	MOSFET (Metal Oxide)	100V	2.9A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	250pF @ 25V	±30V	-	23W (Tc)	1.05 Ohm @ 1.45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQP7N20L	Fairchild/ON Semiconductor	MOSFET N-CH 200V 6.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock128,460	MOSFET (Metal Oxide)	200V	6.5A (Tc)	5V, 10V	2V @ 250µA	9nC @ 5V	500pF @ 25V	±20V	-	63W (Tc)	750 mOhm @ 3.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQP9N08	Fairchild/ON Semiconductor	MOSFET N-CH 80V 9.3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 4.65A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock139,224	MOSFET (Metal Oxide)	80V	9.3A (Tc)	10V	4V @ 250µA	7.7nC @ 10V	250pF @ 25V	±25V	-	40W (Tc)	210 mOhm @ 4.65A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQD5N20LTF	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,352	MOSFET (Metal Oxide)	200V	3.8A (Tc)	5V, 10V	2V @ 250µA	6.2nC @ 5V	325pF @ 25V	±20V	-	2.5W (Ta), 37W (Tc)	1.2 Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR110ATM	Fairchild/ON Semiconductor	MOSFET N-CH 100V 4.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 22W (Tc) Rds On (Max) @ Id, Vgs: 440 mOhm @ 2.35A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,064	MOSFET (Metal Oxide)	100V	4.7A (Tc)	5V	2V @ 250µA	8nC @ 5V	235pF @ 25V	±20V	-	2.5W (Ta), 22W (Tc)	440 mOhm @ 2.35A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD7N20LTF	Fairchild/ON Semiconductor	MOSFET N-CH 200V 5.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 2.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock36,180	MOSFET (Metal Oxide)	200V	5.5A (Tc)	5V, 10V	2V @ 250µA	9nC @ 5V	500pF @ 25V	±20V	-	2.5W (Ta), 45W (Tc)	750 mOhm @ 2.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQPF6N25	Fairchild/ON Semiconductor	MOSFET N-CH 250V 4A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock35,400	MOSFET (Metal Oxide)	250V	4A (Tc)	10V	5V @ 250µA	8.5nC @ 10V	300pF @ 25V	±30V	-	37W (Tc)	1 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQP9N08L	Fairchild/ON Semiconductor	MOSFET N-CH 80V 9.3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 4.65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	80V	9.3A (Tc)	5V, 10V	5V @ 250µA	6.1nC @ 5V	280pF @ 25V	±20V	-	40W (Tc)	210 mOhm @ 4.65A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQU6N25TU	Fairchild/ON Semiconductor	MOSFET N-CH 250V 4.4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,120	MOSFET (Metal Oxide)	250V	4.4A (Tc)	10V	5V @ 250µA	8.5nC @ 10V	300pF @ 25V	±30V	-	2.5W (Ta), 45W (Tc)	1 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FQPF7N20L	Fairchild/ON Semiconductor	MOSFET N-CH 200V 5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,336	MOSFET (Metal Oxide)	200V	5A (Tc)	5V, 10V	2V @ 250µA	9nC @ 5V	500pF @ 25V	±20V	-	37W (Tc)	750 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IRL510A	Fairchild/ON Semiconductor	MOSFET N-CH 100V 5.6A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 440 mOhm @ 2.8A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock62,412	MOSFET (Metal Oxide)	100V	5.6A (Tc)	5V	2V @ 250µA	8nC @ 5V	235pF @ 25V	±20V	-	37W (Tc)	440 mOhm @ 2.8A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQD2N30TM	Fairchild/ON Semiconductor	MOSFET N-CH 300V 1.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 850mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,344	MOSFET (Metal Oxide)	300V	1.7A (Tc)	10V	5V @ 250µA	5nC @ 10V	130pF @ 25V	±30V	-	2.5W (Ta), 25W (Tc)	3.7 Ohm @ 850mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQPF9N08	Fairchild/ON Semiconductor	MOSFET N-CH 80V 7A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 23W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,464	MOSFET (Metal Oxide)	80V	7A (Tc)	10V	4V @ 250µA	7.7nC @ 10V	250pF @ 25V	±25V	-	23W (Tc)	210 mOhm @ 3.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQD7N10LTF	Fairchild/ON Semiconductor	MOSFET N-CH 100V 5.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,264	MOSFET (Metal Oxide)	100V	5.8A (Tc)	5V, 10V	2V @ 250µA	6nC @ 5V	290pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	350 mOhm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD5N20TF	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,064	MOSFET (Metal Oxide)	200V	3.8A (Tc)	10V	5V @ 250µA	7.5nC @ 10V	270pF @ 25V	±30V	-	2.5W (Ta), 37W (Tc)	1.2 Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63