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Fairchild/ON Semiconductor |
MOSFET P-CH 30V 16A 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock9,096 |
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MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 3V @ 250µA | 98nC @ 10V | 3800pF @ 15V | ±25V | - | 2.5W (Ta) | 7.2 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 21A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock173,136 |
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MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 3V @ 1mA | 80nC @ 10V | 3230pF @ 15V | ±20V | - | 3W (Ta) | 4 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 23A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 69nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 4973pF @ 15V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 23A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock60,000 |
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MOSFET (Metal Oxide) | 30V | 23A (Ta) | 4.5V, 10V | 3V @ 250µA | 69nC @ 5V | 4973pF @ 15V | ±16V | - | 3W (Ta) | 5.5 mOhm @ 23A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 88A D-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 88A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 69W (Ta)
- Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 18.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252AA)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,536 |
|
MOSFET (Metal Oxide) | 30V | 88A (Ta) | 4.5V, 10V | 3V @ 1mA | 81nC @ 10V | 3290pF @ 15V | ±20V | - | 69W (Ta) | 5.1 mOhm @ 18.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 90A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 70W (Ta)
- Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252AA)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock218,556 |
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MOSFET (Metal Oxide) | 30V | 90A (Ta) | 4.5V, 10V | 3V @ 1mA | 64nC @ 10V | 2500pF @ 15V | ±20V | - | 70W (Ta) | 5.7 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 65A D-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5070pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 70W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock134,520 |
|
MOSFET (Metal Oxide) | 30V | 65A (Ta) | 4.5V, 10V | 2V @ 250µA | 46nC @ 4.5V | 5070pF @ 15V | ±12V | - | 3.2W (Ta), 70W (Tc) | 8 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 80V 7.7A D-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 7.7A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252AA)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,776 |
|
MOSFET (Metal Oxide) | 80V | 7.7A (Ta) | 6V, 10V | 4V @ 250µA | 49nC @ 10V | 1760pF @ 40V | ±20V | - | 3.8W (Ta), 42W (Tc) | 29 mOhm @ 7.7A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 150V 4.7A D-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1907pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 70W (Tc)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock59,700 |
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MOSFET (Metal Oxide) | 150V | 4.7A (Ta) | 6V, 10V | 4V @ 250µA | 62nC @ 10V | 1907pF @ 75V | ±20V | - | 3.2W (Ta), 70W (Tc) | 80 mOhm @ 4.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 35A D-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2525pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,376 |
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MOSFET (Metal Oxide) | 30V | 17A (Ta), 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 60nC @ 10V | 2525pF @ 15V | ±20V | - | 80W (Tc) | 5.7 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 160A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5160pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock4,528 |
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MOSFET (Metal Oxide) | 30V | 21A (Ta), 160A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 118nC @ 10V | 5160pF @ 15V | ±20V | - | 160W (Tc) | 3.9 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 35A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2525pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock7,952 |
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MOSFET (Metal Oxide) | 30V | 17A (Ta), 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 60nC @ 10V | 2525pF @ 15V | ±20V | - | 80W (Tc) | 5.7 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 35A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5160pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock7,184 |
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MOSFET (Metal Oxide) | 30V | 21A (Ta), 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 118nC @ 10V | 5160pF @ 15V | ±20V | - | 160W (Tc) | 3.9 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 16A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,464 |
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MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 3V @ 1mA | 78nC @ 10V | 3290pF @ 15V | ±20V | - | 2.5W (Ta) | 6 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET P-CH 30V 11A 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock106,068 |
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MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 3V @ 250µA | 34nC @ 5V | 2330pF @ 15V | ±25V | - | 2.5W (Ta) | 13 mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 15A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,568 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta), 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 31.5nC @ 10V | 1440pF @ 15V | ±20V | - | 3.8W (Ta), 52W (Tc) | 8.8 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 40V 13.2A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2819pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 13.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock210,720 |
|
MOSFET (Metal Oxide) | 40V | 13.2A (Ta) | 10V | 5V @ 250µA | 67nC @ 10V | 2819pF @ 20V | ±20V | - | 2.5W (Ta) | 7.5 mOhm @ 13.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 32A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 16A, 10V
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock7,664 |
|
MOSFET (Metal Oxide) | 60V | 32A (Tc) | 6V, 10V | 4V @ 250µA | 33nC @ 10V | 1120pF @ 25V | ±20V | - | 58W (Tc) | 27 mOhm @ 16A, 10V | -65°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 20V 3A SSOT-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-SSOT
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock2,352 |
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MOSFET (Metal Oxide) | 20V | 3A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 4.9nC @ 4.5V | 355pF @ 10V | ±12V | Schottky Diode (Isolated) | - | 70 mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-SSOT | SOT-23-6 Thin, TSOT-23-6 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 20V 14.7A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1882pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 16.2A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock121,212 |
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MOSFET (Metal Oxide) | 20V | 14.7A (Ta), 50A (Tc) | 2.5V, 10V | 1.5V @ 250µA | 23nC @ 4.5V | 1882pF @ 10V | ±12V | - | 3.8W (Ta), 44W (Tc) | 9 mOhm @ 16.2A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 20V 11.2A SSOT-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3829pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 11.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT?-8
- Package / Case: 8-SMD, Gull Wing
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Package: 8-SMD, Gull Wing |
Stock25,680 |
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MOSFET (Metal Oxide) | 20V | 11.2A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 48nC @ 4.5V | 3829pF @ 10V | ±8V | - | 1.8W (Ta) | 9 mOhm @ 11.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-8 | 8-SMD, Gull Wing |
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Fairchild/ON Semiconductor |
MOSFET P-CH 20V 4.1A SC75-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC75-6 FLMP
- Package / Case: SC75-6 FLMP
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Package: SC75-6 FLMP |
Stock198,000 |
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MOSFET (Metal Oxide) | 20V | 4.1A (Ta) | 1.8V, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 780pF @ 10V | ±8V | - | 1.6W (Ta) | 60 mOhm @ 4.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC75-6 FLMP | SC75-6 FLMP |
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Fairchild/ON Semiconductor |
MOSFET P-CH 30V 13A 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3803pF @ 15V
- Vgs (Max): +20V, -25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock384,276 |
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MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 3V @ 250µA | 94nC @ 10V | 3803pF @ 15V | +20V, -25V | - | 2.5W (Ta) | 9 mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET P-CH 30V 14.5A 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4480pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 14.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock319,896 |
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MOSFET (Metal Oxide) | 30V | 14.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 118nC @ 10V | 4480pF @ 15V | ±25V | - | 2.5W (Ta) | 7.2 mOhm @ 14.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 73A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock6,640 |
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MOSFET (Metal Oxide) | 30V | 15A (Ta), 73A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 47nC @ 10V | 1700pF @ 15V | ±20V | - | 70W (Tc) | 8.2 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 15A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock705,444 |
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MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 3V @ 250µA | 32nC @ 10V | 1540pF @ 15V | ±20V | - | 3W (Ta) | 8 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET P-CH 30V 8.8A 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1604pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,905,920 |
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MOSFET (Metal Oxide) | 30V | 8.8A (Ta) | 4.5V, 10V | 3V @ 250µA | 24nC @ 5V | 1604pF @ 15V | ±25V | - | 2.5W (Ta) | 20 mOhm @ 8.8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 94A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2525pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock59,508 |
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MOSFET (Metal Oxide) | 30V | 17A (Ta), 94A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 60nC @ 10V | 2525pF @ 15V | ±20V | - | 80W (Tc) | 5.7 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 14A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1587pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,240 |
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MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 3V @ 250µA | 22nC @ 5V | 1587pF @ 15V | ±20V | - | 3W (Ta) | 9 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |