Page 85 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FQB5N60TM
Fairchild/ON Semiconductor

MOSFET N-CH 600V 5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,552
HUFA75321S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 55V 35A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,272
FQA17P10
Fairchild/ON Semiconductor

MOSFET P-CH 100V 18A TO-3P

Package: TO-3P-3, SC-65-3

Stock8,412
FQP19N20L
Fairchild/ON Semiconductor

MOSFET N-CH 200V 21A TO-220

Package: TO-220-3

Stock5,632
HUFA75829D3ST
Fairchild/ON Semiconductor

MOSFET N-CH 150V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,672
HUF76419D3
Fairchild/ON Semiconductor

MOSFET N-CH 60V 20A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,824
HUFA76629D3ST
Fairchild/ON Semiconductor

MOSFET N-CH 100V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,184
HUFA75329D3ST
Fairchild/ON Semiconductor

MOSFET N-CH 55V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,584
HUFA76429D3ST
Fairchild/ON Semiconductor

MOSFET N-CH 60V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock27,924
HUFA75429D3ST
Fairchild/ON Semiconductor

MOSFET N-CH 60V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock28,200
HUFA76419S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 60V 29A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,344
HUFA75829D3S
Fairchild/ON Semiconductor

MOSFET N-CH 150V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,328
HUFA76423S3S
Fairchild/ON Semiconductor

MOSFET N-CH 60V 35A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,272
HUFA76629D3
Fairchild/ON Semiconductor

MOSFET N-CH 100V 20A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,224
HUFA76629D3S
Fairchild/ON Semiconductor

MOSFET N-CH 100V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,136
HUFA75329D3S
Fairchild/ON Semiconductor

MOSFET N-CH 55V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,840
HUFA75329D3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 20A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,800
HUFA76429D3S
Fairchild/ON Semiconductor

MOSFET N-CH 60V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,096
FQP22P10
Fairchild/ON Semiconductor

MOSFET P-CH 100V 22A TO-220

Package: TO-220-3

Stock5,840
FQPF19N20T
Fairchild/ON Semiconductor

MOSFET N-CH 100V 11.8A TO-220F

Package: TO-220-3 Full Pack

Stock3,552

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FQB5N60TM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,552	MOSFET (Metal Oxide)	600V	5A (Tc)	10V	5V @ 250µA	20nC @ 10V	730pF @ 25V	±30V	-	3.13W (Ta), 120W (Tc)	2 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA75321S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 55V 35A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,272	MOSFET (Metal Oxide)	55V	35A (Tc)	10V	4V @ 250µA	44nC @ 20V	680pF @ 25V	±20V	-	93W (Tc)	34 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQA17P10	Fairchild/ON Semiconductor	MOSFET P-CH 100V 18A TO-3P FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock8,412	MOSFET (Metal Oxide)	100V	18A (Tc)	10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	±30V	-	120W (Tc)	190 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
FQP19N20L	Fairchild/ON Semiconductor	MOSFET N-CH 200V 21A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock5,632	MOSFET (Metal Oxide)	200V	21A (Tc)	5V, 10V	2V @ 250µA	35nC @ 5V	2200pF @ 25V	±20V	-	140W (Tc)	140 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
HUFA75829D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 150V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,672	MOSFET (Metal Oxide)	150V	18A (Tc)	10V	4V @ 250µA	70nC @ 20V	1080pF @ 25V	±20V	-	110W (Tc)	110 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
HUF76419D3	Fairchild/ON Semiconductor	MOSFET N-CH 60V 20A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,824	MOSFET (Metal Oxide)	60V	20A (Tc)	4.5V, 10V	3V @ 250µA	27.5nC @ 10V	900pF @ 25V	±16V	-	75W (Tc)	37 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
HUFA76629D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 100V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1285pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,184	MOSFET (Metal Oxide)	100V	20A (Tc)	4.5V, 10V	3V @ 250µA	46nC @ 10V	1285pF @ 25V	±16V	-	110W (Tc)	52 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA75329D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 55V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,584	MOSFET (Metal Oxide)	55V	20A (Tc)	10V	4V @ 250µA	65nC @ 20V	1060pF @ 25V	±20V	-	128W (Tc)	26 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA76429D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 60V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock27,924	MOSFET (Metal Oxide)	60V	20A (Tc)	4.5V, 10V	3V @ 250µA	46nC @ 10V	1480pF @ 25V	±16V	-	110W (Tc)	23 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA75429D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 60V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock28,200	MOSFET (Metal Oxide)	60V	20A (Tc)	10V	4V @ 250µA	85nC @ 20V	1090pF @ 25V	±20V	-	125W (Tc)	25 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA76419S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 60V 29A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,344	MOSFET (Metal Oxide)	60V	29A (Tc)	4.5V, 10V	3V @ 250µA	28nC @ 10V	900pF @ 25V	±16V	-	75W (Tc)	35 mOhm @ 29A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA75829D3S	Fairchild/ON Semiconductor	MOSFET N-CH 150V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,328	MOSFET (Metal Oxide)	150V	18A (Tc)	10V	4V @ 250µA	70nC @ 20V	1080pF @ 25V	±20V	-	110W (Tc)	110 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA76423S3S	Fairchild/ON Semiconductor	MOSFET N-CH 60V 35A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,272	MOSFET (Metal Oxide)	60V	35A (Tc)	4.5V, 10V	3V @ 250µA	34nC @ 10V	1060pF @ 25V	±16V	-	85W (Tc)	30 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA76629D3	Fairchild/ON Semiconductor	MOSFET N-CH 100V 20A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1285pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,224	MOSFET (Metal Oxide)	100V	20A (Tc)	4.5V, 10V	3V @ 250µA	46nC @ 10V	1285pF @ 25V	±16V	-	110W (Tc)	52 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
HUFA76629D3S	Fairchild/ON Semiconductor	MOSFET N-CH 100V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1285pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,136	MOSFET (Metal Oxide)	100V	20A (Tc)	4.5V, 10V	3V @ 250µA	46nC @ 10V	1285pF @ 25V	±16V	-	110W (Tc)	52 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA75329D3S	Fairchild/ON Semiconductor	MOSFET N-CH 55V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,840	MOSFET (Metal Oxide)	55V	20A (Tc)	10V	4V @ 250µA	65nC @ 20V	1060pF @ 25V	±20V	-	128W (Tc)	26 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA75329D3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 20A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,800	MOSFET (Metal Oxide)	55V	20A (Tc)	10V	4V @ 250µA	65nC @ 20V	1060pF @ 25V	±20V	-	128W (Tc)	26 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
HUFA76429D3S	Fairchild/ON Semiconductor	MOSFET N-CH 60V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,096	MOSFET (Metal Oxide)	60V	20A (Tc)	4.5V, 10V	3V @ 250µA	46nC @ 10V	1480pF @ 25V	±16V	-	110W (Tc)	23 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FQP22P10	Fairchild/ON Semiconductor	MOSFET P-CH 100V 22A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock5,840	MOSFET (Metal Oxide)	100V	22A (Tc)	10V	4V @ 250µA	50nC @ 10V	1500pF @ 25V	±30V	-	125W (Tc)	125 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQPF19N20T	Fairchild/ON Semiconductor	MOSFET N-CH 100V 11.8A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 5.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,552	MOSFET (Metal Oxide)	100V	11.8A (Tc)	10V	5V @ 250µA	40nC @ 10V	1600pF @ 25V	±30V	-	50W (Tc)	150 mOhm @ 5.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQD18N20V2TF	Fairchild/ON Semiconductor	MOSFET N-CH 200V 15A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,968	MOSFET (Metal Oxide)	200V	15A (Tc)	10V	5V @ 250µA	26nC @ 10V	1080pF @ 25V	±30V	-	2.5W (Ta), 83W (Tc)	140 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
HUF75623S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 100V 22A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 64 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock25,920	MOSFET (Metal Oxide)	100V	22A (Tc)	10V	4V @ 250µA	52nC @ 20V	790pF @ 25V	±20V	-	85W (Tc)	64 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUF75623P3	Fairchild/ON Semiconductor	MOSFET N-CH 100V 22A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 64 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock483,852	MOSFET (Metal Oxide)	100V	22A (Tc)	10V	4V @ 250µA	52nC @ 20V	790pF @ 25V	±20V	-	85W (Tc)	64 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQAF17P10	Fairchild/ON Semiconductor	MOSFET P-CH 100V 12.4A TO-3PF FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 6.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock21,180	MOSFET (Metal Oxide)	100V	12.4A (Tc)	10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	±30V	-	56W (Tc)	190 mOhm @ 6.2A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3PF	SC-94
FQP44N08	Fairchild/ON Semiconductor	MOSFET N-CH 80V 44A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 127W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock3,376	MOSFET (Metal Oxide)	80V	44A (Tc)	10V	4V @ 250µA	50nC @ 10V	1430pF @ 25V	±25V	-	127W (Tc)	34 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQI6N50TU	Fairchild/ON Semiconductor	MOSFET N-CH 500V 5.5A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,680	MOSFET (Metal Oxide)	500V	5.5A (Tc)	10V	5V @ 250µA	22nC @ 10V	790pF @ 25V	±30V	-	3.13W (Ta), 130W (Tc)	1.3 Ohm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
HUF76429P3	Fairchild/ON Semiconductor	MOSFET N-CH 60V 47A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 47A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,736	MOSFET (Metal Oxide)	60V	47A (Tc)	4.5V, 10V	3V @ 250µA	46nC @ 10V	1480pF @ 25V	±16V	-	110W (Tc)	22 mOhm @ 47A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQPF44N08T	Fairchild/ON Semiconductor	MOSFET N-CH 80V 25A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,328	MOSFET (Metal Oxide)	80V	25A (Tc)	10V	4V @ 250µA	50nC @ 10V	1430pF @ 25V	±25V	-	41W (Tc)	34 mOhm @ 12.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack