Page 86 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FQP4N90
Fairchild/ON Semiconductor

MOSFET N-CH 900V 4.2A TO-220

Package: TO-220-3

Stock127,464
NDP6030PL
Fairchild/ON Semiconductor

MOSFET P-CH 30V 30A TO-220

Package: TO-220-3

Stock29,400
FQAF33N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 25.8A TO-3PF

Package: SC-94

Stock17,076
FQAF33N10L
Fairchild/ON Semiconductor

MOSFET N-CH 100V 25.8A TO-3PF

Package: SC-94

Stock8,532
FQAF22P10
Fairchild/ON Semiconductor

MOSFET P-CH 100V 16.6A TO-3PF

Package: SC-94

Stock5,824
FQP6N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 6.2A TO-220

Package: TO-220-3

Stock3,968
FQAF9P25
Fairchild/ON Semiconductor

MOSFET P-CH 250V 7.1A TO-3P

Package: TO-3P-3 Full Pack

Stock12,984
FQB16N25TM
Fairchild/ON Semiconductor

MOSFET N-CH 250V 16A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock24,912
SFP9640L
Fairchild/ON Semiconductor

MOSFET P-CH 200V 11A TO-220

Package: TO-220-3

Stock390,000
FQPF14N30
Fairchild/ON Semiconductor

MOSFET N-CH 300V 8.5A TO-220F

Package: TO-220-3 Full Pack

Stock2,976
HUF75333P3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 60A TO-220AB

Package: TO-220-3

Stock23,304
HUFA76423S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 60V 35A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,648
HUFA75623S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 100V 22A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,288
HUFA75329P3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 49A TO-220AB

Package: TO-220-3

Stock5,120
HUFA76429P3
Fairchild/ON Semiconductor

MOSFET N-CH 60V 47A TO-220AB

Package: TO-220-3

Stock6,128
RFP22N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 22A TO-220AB

Package: TO-220-3

Stock17,544
FQB6N60TM
Fairchild/ON Semiconductor

MOSFET N-CH 600V 6.2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock103,584
FQI32N20CTU
Fairchild/ON Semiconductor

MOSFET N-CH 200V 28A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,040
FQP32N12V2
Fairchild/ON Semiconductor

MOSFET N-CH 120V 32A TO-220

Package: TO-220-3

Stock5,840
HUFA75823D3ST
Fairchild/ON Semiconductor

MOSFET N-CH 150V 14A TO-252AA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,100

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FQP4N90	Fairchild/ON Semiconductor	MOSFET N-CH 900V 4.2A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock127,464	MOSFET (Metal Oxide)	900V	4.2A (Tc)	10V	5V @ 250µA	30nC @ 10V	1100pF @ 25V	±30V	-	140W (Tc)	3.3 Ohm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
NDP6030PL	Fairchild/ON Semiconductor	MOSFET P-CH 30V 30A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 15V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 19A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock29,400	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	2V @ 250µA	36nC @ 5V	1570pF @ 15V	±16V	-	75W (Tc)	25 mOhm @ 19A, 10V	-65°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
FQAF33N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 25.8A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 12.9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock17,076	MOSFET (Metal Oxide)	100V	25.8A (Tc)	10V	4V @ 250µA	51nC @ 10V	1500pF @ 25V	±25V	-	83W (Tc)	52 mOhm @ 12.9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3PF	SC-94
FQAF33N10L	Fairchild/ON Semiconductor	MOSFET N-CH 100V 25.8A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 12.9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock8,532	MOSFET (Metal Oxide)	100V	25.8A (Tc)	5V, 10V	2V @ 250µA	40nC @ 5V	1630pF @ 25V	±20V	-	83W (Tc)	52 mOhm @ 12.9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3PF	SC-94
FQAF22P10	Fairchild/ON Semiconductor	MOSFET P-CH 100V 16.6A TO-3PF FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 8.3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock5,824	MOSFET (Metal Oxide)	100V	16.6A (Tc)	10V	4V @ 250µA	50nC @ 10V	1500pF @ 25V	±30V	-	70W (Tc)	125 mOhm @ 8.3A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3PF	SC-94
FQP6N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 6.2A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock3,968	MOSFET (Metal Oxide)	600V	6.2A (Tc)	10V	5V @ 250µA	25nC @ 10V	1000pF @ 25V	±30V	-	130W (Tc)	1.5 Ohm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQAF9P25	Fairchild/ON Semiconductor	MOSFET P-CH 250V 7.1A TO-3P FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 620 mOhm @ 3.55A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock12,984	MOSFET (Metal Oxide)	250V	7.1A (Tc)	10V	5V @ 250µA	38nC @ 10V	1180pF @ 25V	±30V	-	70W (Tc)	620 mOhm @ 3.55A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
FQB16N25TM	Fairchild/ON Semiconductor	MOSFET N-CH 250V 16A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 142W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock24,912	MOSFET (Metal Oxide)	250V	16A (Tc)	10V	5V @ 250µA	35nC @ 10V	1200pF @ 25V	±30V	-	3.13W (Ta), 142W (Tc)	230 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SFP9640L	Fairchild/ON Semiconductor	MOSFET P-CH 200V 11A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 98W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 5.5A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock390,000	MOSFET (Metal Oxide)	200V	11A (Tc)	5V	2V @ 250µA	59nC @ 5V	1585pF @ 25V	±20V	-	98W (Tc)	500 mOhm @ 5.5A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQPF14N30	Fairchild/ON Semiconductor	MOSFET N-CH 300V 8.5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 4.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,976	MOSFET (Metal Oxide)	300V	8.5A (Tc)	10V	5V @ 250µA	40nC @ 10V	1360pF @ 25V	±30V	-	50W (Tc)	290 mOhm @ 4.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
HUF75333P3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 60A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 66A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock23,304	MOSFET (Metal Oxide)	55V	66A (Tc)	10V	4V @ 250µA	85nC @ 20V	1300pF @ 25V	±20V	-	150W (Tc)	16 mOhm @ 66A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
HUFA76423S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 60V 35A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,648	MOSFET (Metal Oxide)	60V	35A (Tc)	4.5V, 10V	3V @ 250µA	34nC @ 10V	1060pF @ 25V	±16V	-	85W (Tc)	30 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA75623S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 100V 22A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 64 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,288	MOSFET (Metal Oxide)	100V	22A (Tc)	10V	4V @ 250µA	52nC @ 20V	790pF @ 25V	±20V	-	85W (Tc)	64 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA75329P3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 49A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 49A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,120	MOSFET (Metal Oxide)	55V	49A (Tc)	10V	4V @ 250µA	75nC @ 20V	1060pF @ 25V	±20V	-	128W (Tc)	24 mOhm @ 49A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
HUFA76429P3	Fairchild/ON Semiconductor	MOSFET N-CH 60V 47A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 47A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,128	MOSFET (Metal Oxide)	60V	47A (Tc)	4.5V, 10V	3V @ 250µA	46nC @ 10V	1480pF @ 25V	±16V	-	110W (Tc)	22 mOhm @ 47A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
RFP22N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 22A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock17,544	MOSFET (Metal Oxide)	100V	22A (Tc)	10V	4V @ 250µA	150nC @ 20V	-	±20V	-	100W (Tc)	80 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQB6N60TM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 6.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock103,584	MOSFET (Metal Oxide)	600V	6.2A (Tc)	10V	5V @ 250µA	25nC @ 10V	1000pF @ 25V	±30V	-	3.13W (Ta), 130W (Tc)	1.5 Ohm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQI32N20CTU	Fairchild/ON Semiconductor	MOSFET N-CH 200V 28A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 82 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,040	MOSFET (Metal Oxide)	200V	28A (Tc)	10V	4V @ 250µA	110nC @ 10V	2220pF @ 25V	±30V	-	3.13W (Ta), 156W (Tc)	82 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
FQP32N12V2	Fairchild/ON Semiconductor	MOSFET N-CH 120V 32A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock5,840	MOSFET (Metal Oxide)	120V	32A (Tc)	10V	4V @ 250µA	53nC @ 10V	1860pF @ 25V	±30V	-	150W (Tc)	50 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
HUFA75823D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 150V 14A TO-252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,100	MOSFET (Metal Oxide)	150V	14A (Tc)	10V	4V @ 250µA	54nC @ 20V	800pF @ 25V	±20V	-	85W (Tc)	150 mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FQI19N20TU	Fairchild/ON Semiconductor	MOSFET N-CH 200V 19.4A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 9.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,808	MOSFET (Metal Oxide)	200V	19.4A (Tc)	10V	5V @ 250µA	40nC @ 10V	1600pF @ 25V	±30V	-	3.13W (Ta), 140W (Tc)	150 mOhm @ 9.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
FQPF16N25	Fairchild/ON Semiconductor	MOSFET N-CH 250V 9.5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 4.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,248	MOSFET (Metal Oxide)	250V	9.5A (Tc)	10V	5V @ 250µA	35nC @ 10V	1200pF @ 25V	±30V	-	50W (Tc)	230 mOhm @ 4.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQPF8N60CYDTU	Fairchild/ON Semiconductor	MOSFET N-CH 600V 7.5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 (Y-Forming) Package / Case: TO-220-3 Full Pack, Formed Leads	Package: TO-220-3 Full Pack, Formed Leads	Stock7,848	MOSFET (Metal Oxide)	600V	7.5A (Tc)	10V	4V @ 250µA	36nC @ 10V	1255pF @ 25V	±30V	-	48W (Tc)	1.2 Ohm @ 3.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3 (Y-Forming)	TO-220-3 Full Pack, Formed Leads
FQB55N06TM	Fairchild/ON Semiconductor	MOSFET N-CH 60V 55A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 133W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 27.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock60,132	MOSFET (Metal Oxide)	60V	55A (Tc)	10V	4V @ 250µA	46nC @ 10V	1690pF @ 25V	±25V	-	3.75W (Ta), 133W (Tc)	20 mOhm @ 27.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF4N80	Fairchild/ON Semiconductor	MOSFET N-CH 800V 2.2A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock13,608	MOSFET (Metal Oxide)	800V	2.2A (Tc)	10V	5V @ 250µA	25nC @ 10V	880pF @ 25V	±30V	-	43W (Tc)	3.6 Ohm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQB3N90TM	Fairchild/ON Semiconductor	MOSFET N-CH 900V 3.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs: 4.25 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,968	MOSFET (Metal Oxide)	900V	3.6A (Tc)	10V	5V @ 250µA	26nC @ 10V	910pF @ 25V	±30V	-	3.13W (Ta), 130W (Tc)	4.25 Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQI3N90TU	Fairchild/ON Semiconductor	MOSFET N-CH 900V 3.6A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs: 4.25 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,344	MOSFET (Metal Oxide)	900V	3.6A (Tc)	10V	5V @ 250µA	26nC @ 10V	910pF @ 25V	±30V	-	3.13W (Ta), 130W (Tc)	4.25 Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
FQPF32N12V2	Fairchild/ON Semiconductor	MOSFET N-CH 120V 32A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,344	MOSFET (Metal Oxide)	120V	32A (Tc)	10V	4V @ 250µA	53nC @ 10V	1860pF @ 25V	±30V	-	50W (Tc)	50 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack