Page 95 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FQA11N90C
Fairchild/ON Semiconductor

MOSFET N-CH 900V 11A TO-3P

Package: TO-3P-3, SC-65-3

Stock512,484
HUFA75545P3
Fairchild/ON Semiconductor

MOSFET N-CH 80V 75A TO-220AB

Package: TO-220-3

Stock8,784
HUFA76445S3S
Fairchild/ON Semiconductor

MOSFET N-CH 60V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,088
HUFA75345P3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A TO-220AB

Package: TO-220-3

Stock4,320
HUFA75345S3S
Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,864
HUFA76445P3
Fairchild/ON Semiconductor

MOSFET N-CH 60V 75A TO-220AB

Package: TO-220-3

Stock3,168
FQA18N50V2
Fairchild/ON Semiconductor

MOSFET N-CH 500V 20A TO-3P

Package: TO-3P-3, SC-65-3

Stock4,432
HUFA75545S3S
Fairchild/ON Semiconductor

MOSFET N-CH 80V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,216
HUF76645P3
Fairchild/ON Semiconductor

MOSFET N-CH 100V 75A TO-220AB

Package: TO-220-3

Stock115,080
HUF76645S3S
Fairchild/ON Semiconductor

MOSFET N-CH 100V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,144
FQPF90N10V2
Fairchild/ON Semiconductor

MOSFET N-CH 100V 90A TO-220F

Package: TO-220-3 Full Pack

Stock398,736
HUF76445S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 60V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,600
FQAF10N80
Fairchild/ON Semiconductor

MOSFET N-CH 800V 6.7A TO-3PF

Package: SC-94

Stock6,544
FQAF90N08
Fairchild/ON Semiconductor

MOSFET N-CH 80V 56A TO-3PF

Package: SC-94

Stock13,404
FQB45N15V2TM
Fairchild/ON Semiconductor

MOSFET N-CH 150V 45A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,792
HUFA75344S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,712
RFG40N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 40A TO-247

Package: TO-247-3

Stock32,232
FQA10N80
Fairchild/ON Semiconductor

MOSFET N-CH 800V 9.8A TO-3P

Package: TO-3P-3, SC-65-3

Stock107,748
HUF76445S3S
Fairchild/ON Semiconductor

MOSFET N-CH 60V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,384
HUF75545S3
Fairchild/ON Semiconductor

MOSFET N-CH 80V 75A TO-262AA

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,128

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FQA11N90C	Fairchild/ON Semiconductor	MOSFET N-CH 900V 11A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock512,484	MOSFET (Metal Oxide)	900V	11A (Tc)	10V	5V @ 250µA	80nC @ 10V	3290pF @ 25V	±30V	-	300W (Tc)	1.1 Ohm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
HUFA75545P3	Fairchild/ON Semiconductor	MOSFET N-CH 80V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock8,784	MOSFET (Metal Oxide)	80V	75A (Tc)	10V	4V @ 250µA	235nC @ 20V	3750pF @ 25V	±20V	-	270W (Tc)	10 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
HUFA76445S3S	Fairchild/ON Semiconductor	MOSFET N-CH 60V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4965pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,088	MOSFET (Metal Oxide)	60V	75A (Tc)	4.5V, 10V	3V @ 250µA	150nC @ 10V	4965pF @ 25V	±16V	-	310W (Tc)	6.5 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA75345P3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 275nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 325W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,320	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	275nC @ 20V	4000pF @ 25V	±20V	-	325W (Tc)	7 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
HUFA75345S3S	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 275nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 325W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,864	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	275nC @ 20V	4000pF @ 25V	±20V	-	325W (Tc)	7 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA76445P3	Fairchild/ON Semiconductor	MOSFET N-CH 60V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4965pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,168	MOSFET (Metal Oxide)	60V	75A (Tc)	4.5V, 10V	3V @ 250µA	150nC @ 10V	4965pF @ 25V	±16V	-	310W (Tc)	6.5 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQA18N50V2	Fairchild/ON Semiconductor	MOSFET N-CH 500V 20A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 277W (Tc) Rds On (Max) @ Id, Vgs: 265 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock4,432	MOSFET (Metal Oxide)	500V	20A (Tc)	10V	5V @ 250µA	55nC @ 10V	3290pF @ 25V	±30V	-	277W (Tc)	265 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
HUFA75545S3S	Fairchild/ON Semiconductor	MOSFET N-CH 80V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,216	MOSFET (Metal Oxide)	80V	75A (Tc)	10V	4V @ 250µA	235nC @ 20V	3750pF @ 25V	±20V	-	270W (Tc)	10 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUF76645P3	Fairchild/ON Semiconductor	MOSFET N-CH 100V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock115,080	MOSFET (Metal Oxide)	100V	75A (Tc)	4.5V, 10V	3V @ 250µA	153nC @ 10V	4400pF @ 25V	±16V	-	310W (Tc)	14 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
HUF76645S3S	Fairchild/ON Semiconductor	MOSFET N-CH 100V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,144	MOSFET (Metal Oxide)	100V	75A (Tc)	4.5V, 10V	3V @ 250µA	153nC @ 10V	4400pF @ 25V	±16V	-	310W (Tc)	14 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF90N10V2	Fairchild/ON Semiconductor	MOSFET N-CH 100V 90A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 191nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock398,736	MOSFET (Metal Oxide)	100V	90A (Tc)	10V	4V @ 250µA	191nC @ 10V	6150pF @ 25V	±30V	-	83W (Tc)	10 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
HUF76445S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 60V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4965pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,600	MOSFET (Metal Oxide)	60V	75A (Tc)	4.5V, 10V	3V @ 250µA	150nC @ 10V	4965pF @ 25V	±16V	-	310W (Tc)	6.5 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQAF10N80	Fairchild/ON Semiconductor	MOSFET N-CH 800V 6.7A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 113W (Tc) Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 3.35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock6,544	MOSFET (Metal Oxide)	800V	6.7A (Tc)	10V	5V @ 250µA	71nC @ 10V	2700pF @ 25V	±30V	-	113W (Tc)	1.05 Ohm @ 3.35A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	SC-94
FQAF90N08	Fairchild/ON Semiconductor	MOSFET N-CH 80V 56A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock13,404	MOSFET (Metal Oxide)	80V	56A (Tc)	10V	4V @ 250µA	110nC @ 10V	3250pF @ 25V	±25V	-	100W (Tc)	16 mOhm @ 28A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3PF	SC-94
FQB45N15V2TM	Fairchild/ON Semiconductor	MOSFET N-CH 150V 45A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 40 mOhm @ 22.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,792	MOSFET (Metal Oxide)	150V	45A (Tc)	10V	4V @ 250µA	94nC @ 10V	3030pF @ 25V	±30V	-	-	40 mOhm @ 22.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA75344S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 285W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,712	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	210nC @ 20V	3200pF @ 25V	±20V	-	285W (Tc)	8 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RFG40N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 40A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock32,232	MOSFET (Metal Oxide)	100V	40A (Tc)	10V	4V @ 250µA	300nC @ 20V	-	±20V	-	160W (Tc)	40 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
FQA10N80	Fairchild/ON Semiconductor	MOSFET N-CH 800V 9.8A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 4.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock107,748	MOSFET (Metal Oxide)	800V	9.8A (Tc)	10V	5V @ 250µA	71nC @ 10V	2700pF @ 25V	±30V	-	240W (Tc)	1.05 Ohm @ 4.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
HUF76445S3S	Fairchild/ON Semiconductor	MOSFET N-CH 60V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4965pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,384	MOSFET (Metal Oxide)	60V	75A (Tc)	4.5V, 10V	3V @ 250µA	150nC @ 10V	4965pF @ 25V	±16V	-	310W (Tc)	6.5 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUF75545S3	Fairchild/ON Semiconductor	MOSFET N-CH 80V 75A TO-262AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262AA Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,128	MOSFET (Metal Oxide)	80V	75A (Tc)	10V	4V @ 250µA	235nC @ 20V	3750pF @ 25V	±20V	-	270W (Tc)	10 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262AA	TO-262-3 Long Leads, I2Pak, TO-262AA
HUF75545S3S	Fairchild/ON Semiconductor	MOSFET N-CH 80V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,480	MOSFET (Metal Oxide)	80V	75A (Tc)	10V	4V @ 250µA	235nC @ 20V	3750pF @ 25V	±20V	-	270W (Tc)	10 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA75344S3S	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 285W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,424	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	210nC @ 20V	3200pF @ 25V	±20V	-	285W (Tc)	8 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA75344S3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A TO-262AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 285W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262AA Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,488	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	210nC @ 20V	3200pF @ 25V	±20V	-	285W (Tc)	8 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262AA	TO-262-3 Long Leads, I2Pak, TO-262AA
HUFA75343S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 205nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,528	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	205nC @ 20V	3000pF @ 25V	±20V	-	270W (Tc)	9 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDZ7064N	Fairchild/ON Semiconductor	MOSFET N-CH 30V 13.5A BGA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3843pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 30-BGA (4x3.5) Package / Case: 30-WFBGA	Package: 30-WFBGA	Stock3,568	MOSFET (Metal Oxide)	30V	13.5A (Ta)	4.5V, 10V	2V @ 250µA	43nC @ 4.5V	3843pF @ 15V	±12V	-	2.2W (Ta)	7 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	30-BGA (4x3.5)	30-WFBGA
HUFA76443S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 60V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 129nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4115pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 260W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,960	MOSFET (Metal Oxide)	60V	75A (Tc)	4.5V, 10V	3V @ 250µA	129nC @ 10V	4115pF @ 25V	±16V	-	260W (Tc)	8 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUF76445P3	Fairchild/ON Semiconductor	MOSFET N-CH 60V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4965pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock171,480	MOSFET (Metal Oxide)	60V	75A (Tc)	4.5V, 10V	3V @ 250µA	150nC @ 10V	4965pF @ 25V	±16V	-	310W (Tc)	6.5 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
HUFA75343S3S	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 205nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock18,720	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	205nC @ 20V	3000pF @ 25V	±20V	-	270W (Tc)	9 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB