Page 92 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

HUFA76639S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 100V 50A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,056
FQPF46N15
Fairchild/ON Semiconductor

MOSFET N-CH 150V 25.6A TO-220F

Package: TO-220-3 Full Pack

Stock6,560
FQPF34N20L
Fairchild/ON Semiconductor

MOSFET N-CH 200V 17.5A TO-220F

Package: TO-220-3 Full Pack

Stock3,408
FQPF34N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 17.5A TO-220F

Package: TO-220-3 Full Pack

Stock17,688
HUFA75332G3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 60A TO-247

Package: TO-247-3

Stock6,112
HUFA75339S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,384
HUFA76439S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 60V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock19,200
FQA34N20L
Fairchild/ON Semiconductor

MOSFET N-CH 200V 34A TO-3P

Package: TO-3P-3, SC-65-3

Stock116,040
FQAF5N90
Fairchild/ON Semiconductor

MOSFET N-CH 900V 4.1A TO-3PF

Package: SC-94

Stock16,080
FQP70N08
Fairchild/ON Semiconductor

MOSFET N-CH 80V 70A TO-220

Package: TO-220-3

Stock163,476
FQA5N90
Fairchild/ON Semiconductor

MOSFET N-CH 900V 5.8A TO-3P

Package: TO-3P-3, SC-65-3

Stock107,352
FQH44N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 48A TO-247

Package: TO-247-3

Stock115,128
SFH154
Fairchild/ON Semiconductor

MOSFET N-CH 150V 34A TO-3P

Package: TO-3P-3, SC-65-3

Stock3,264
SFH9154
Fairchild/ON Semiconductor

MOSFET P-CH 150V 18A TO-3P

Package: TO-3P-3, SC-65-3

Stock23,880
HUF75343P3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A TO-220AB

Package: TO-220-3

Stock14,940
FQA8N80C
Fairchild/ON Semiconductor

MOSFET N-CH 800V 8.4A TO-3P

Package: TO-3P-3, SC-65-3

Stock104,376
FQB27N25TM_AM002
Fairchild/ON Semiconductor

MOSFET N-CH 250V 25.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,072
FQP12N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 10.5A TO-220

Package: TO-220-3

Stock7,728
FQPF12N60T
Fairchild/ON Semiconductor

MOSFET N-CH 600V 5.8A TO-220F

Package: TO-220-3 Full Pack

Stock6,512
HUFA76639S3S
Fairchild/ON Semiconductor

MOSFET N-CH 100V 50A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,720

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
HUFA76639S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 100V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 51A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,056	MOSFET (Metal Oxide)	100V	51A (Tc)	4.5V, 10V	3V @ 250µA	86nC @ 10V	2400pF @ 25V	±16V	-	180W (Tc)	26 mOhm @ 51A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF46N15	Fairchild/ON Semiconductor	MOSFET N-CH 150V 25.6A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 25.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 12.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,560	MOSFET (Metal Oxide)	150V	25.6A (Tc)	10V	4V @ 250µA	110nC @ 10V	3250pF @ 25V	±25V	-	66W (Tc)	42 mOhm @ 12.8A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQPF34N20L	Fairchild/ON Semiconductor	MOSFET N-CH 200V 17.5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 8.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,408	MOSFET (Metal Oxide)	200V	17.5A (Tc)	5V, 10V	2V @ 250µA	72nC @ 5V	3900pF @ 25V	±20V	-	55W (Tc)	75 mOhm @ 8.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQPF34N20	Fairchild/ON Semiconductor	MOSFET N-CH 200V 17.5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 8.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock17,688	MOSFET (Metal Oxide)	200V	17.5A (Tc)	10V	5V @ 250µA	78nC @ 10V	3100pF @ 25V	±30V	-	55W (Tc)	75 mOhm @ 8.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
HUFA75332G3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 60A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 145W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,112	MOSFET (Metal Oxide)	55V	60A (Tc)	10V	4V @ 250µA	85nC @ 20V	1300pF @ 25V	±20V	-	145W (Tc)	19 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
HUFA75339S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,384	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	130nC @ 20V	2000pF @ 25V	±20V	-	200W (Tc)	12 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA76439S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 60V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2745pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 155W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock19,200	MOSFET (Metal Oxide)	60V	75A (Tc)	4.5V, 10V	3V @ 250µA	84nC @ 10V	2745pF @ 25V	±16V	-	155W (Tc)	12 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQA34N20L	Fairchild/ON Semiconductor	MOSFET N-CH 200V 34A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock116,040	MOSFET (Metal Oxide)	200V	34A (Tc)	5V, 10V	2V @ 250µA	72nC @ 5V	3900pF @ 25V	±20V	-	210W (Tc)	75 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
FQAF5N90	Fairchild/ON Semiconductor	MOSFET N-CH 900V 4.1A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 2.05A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock16,080	MOSFET (Metal Oxide)	900V	4.1A (Tc)	10V	5V @ 250µA	40nC @ 10V	1550pF @ 25V	±30V	-	90W (Tc)	2.3 Ohm @ 2.05A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	SC-94
FQP70N08	Fairchild/ON Semiconductor	MOSFET N-CH 80V 70A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 155W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock163,476	MOSFET (Metal Oxide)	80V	70A (Tc)	10V	4V @ 250µA	98nC @ 10V	2700pF @ 25V	±25V	-	155W (Tc)	17 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQA5N90	Fairchild/ON Semiconductor	MOSFET N-CH 900V 5.8A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 185W (Tc) Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock107,352	MOSFET (Metal Oxide)	900V	5.8A (Tc)	10V	5V @ 250µA	40nC @ 10V	1550pF @ 25V	±30V	-	185W (Tc)	2.3 Ohm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
FQH44N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 48A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock115,128	MOSFET (Metal Oxide)	100V	48A (Tc)	10V	4V @ 250µA	62nC @ 10V	1800pF @ 25V	±25V	-	180W (Tc)	39 mOhm @ 24A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
SFH154	Fairchild/ON Semiconductor	MOSFET N-CH 150V 34A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 204W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock3,264	MOSFET (Metal Oxide)	150V	34A (Tc)	10V	4V @ 250µA	110nC @ 10V	3370pF @ 25V	±30V	-	204W (Tc)	75 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
SFH9154	Fairchild/ON Semiconductor	MOSFET P-CH 150V 18A TO-3P FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 204W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock23,880	MOSFET (Metal Oxide)	150V	18A (Tc)	10V	4V @ 250µA	130nC @ 10V	3000pF @ 25V	±30V	-	204W (Tc)	200 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
HUF75343P3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 205nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock14,940	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	205nC @ 20V	3000pF @ 25V	±20V	-	270W (Tc)	9 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQA8N80C	Fairchild/ON Semiconductor	MOSFET N-CH 800V 8.4A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 220W (Tc) Rds On (Max) @ Id, Vgs: 1.55 Ohm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock104,376	MOSFET (Metal Oxide)	800V	8.4A (Tc)	10V	5V @ 250µA	45nC @ 10V	2050pF @ 25V	±30V	-	220W (Tc)	1.55 Ohm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FQB27N25TM_AM002	Fairchild/ON Semiconductor	MOSFET N-CH 250V 25.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 25.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 180W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,072	MOSFET (Metal Oxide)	250V	25.5A (Tc)	10V	5V @ 250µA	65nC @ 10V	2450pF @ 25V	±30V	-	3.13W (Ta), 180W (Tc)	110 mOhm @ 12.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQP12N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 10.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock7,728	MOSFET (Metal Oxide)	600V	10.5A (Tc)	10V	5V @ 250µA	54nC @ 10V	1900pF @ 25V	±30V	-	180W (Tc)	700 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQPF12N60T	Fairchild/ON Semiconductor	MOSFET N-CH 600V 5.8A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,512	MOSFET (Metal Oxide)	600V	5.8A (Tc)	10V	5V @ 250µA	54nC @ 10V	1900pF @ 25V	±30V	-	55W (Tc)	700 mOhm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
HUFA76639S3S	Fairchild/ON Semiconductor	MOSFET N-CH 100V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 51A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,720	MOSFET (Metal Oxide)	100V	51A (Tc)	4.5V, 10V	3V @ 250µA	86nC @ 10V	2400pF @ 25V	±16V	-	180W (Tc)	26 mOhm @ 51A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQA10N60C	Fairchild/ON Semiconductor	MOSFET N-CH 600V 10A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 730 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock16,188	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4V @ 250µA	57nC @ 10V	2040pF @ 25V	±30V	-	192W (Tc)	730 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FQB70N10TM_AM002	Fairchild/ON Semiconductor	MOSFET N-CH 100V 57A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 160W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 28.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,440	MOSFET (Metal Oxide)	100V	57A (Tc)	10V	4V @ 250µA	110nC @ 10V	3300pF @ 25V	±25V	-	3.75W (Ta), 160W (Tc)	23 mOhm @ 28.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB6N90TM_AM002	Fairchild/ON Semiconductor	MOSFET N-CH 900V 5.8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,160	MOSFET (Metal Oxide)	900V	5.8A (Tc)	10V	5V @ 250µA	52nC @ 10V	1880pF @ 25V	±30V	-	3.13W (Ta), 167W (Tc)	1.9 Ohm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA76439S3S	Fairchild/ON Semiconductor	MOSFET N-CH 60V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2745pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 155W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,232	MOSFET (Metal Oxide)	60V	75A (Tc)	4.5V, 10V	3V @ 250µA	84nC @ 10V	2745pF @ 25V	±16V	-	155W (Tc)	12 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA75339S3S	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,408	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	130nC @ 20V	2000pF @ 25V	±20V	-	200W (Tc)	12 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQA55N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 61A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 30.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock105,276	MOSFET (Metal Oxide)	100V	61A (Tc)	10V	4V @ 250µA	98nC @ 10V	2730pF @ 25V	±25V	-	190W (Tc)	26 mOhm @ 30.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
HUFA75639S3S	Fairchild/ON Semiconductor	MOSFET N-CH 100V 56A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,424	MOSFET (Metal Oxide)	100V	56A (Tc)	10V	4V @ 250µA	130nC @ 20V	2000pF @ 25V	±20V	-	200W (Tc)	25 mOhm @ 56A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SFH9250L	Fairchild/ON Semiconductor	MOSFET P-CH 200V 19.5A TO-3P FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 204W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 9.8A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,344	MOSFET (Metal Oxide)	200V	19.5A (Tc)	5V	2V @ 250µA	120nC @ 5V	3250pF @ 25V	±20V	-	204W (Tc)	230 mOhm @ 9.8A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3