Infineon Technologies Products - Diodes - Rectifiers - Single

DIODE GP 600V 10A WAFER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -55°C ~ 150°C

DIODE GEN PURP 600V 10A DIE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die
• Operating Temperature - Junction: -55°C ~ 150°C

DIODE GEN PURP 600V 10A DIE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die
• Operating Temperature - Junction: -55°C ~ 150°C

DIODE SCHOTT 40V 750MA SOD323-2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 750mA
• Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 40 V
• Capacitance @ Vr, F: 8.4pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: PG-SOD323-2
• Operating Temperature - Junction: 150°C

DIODE GEN PURP 600V 100A DIE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 100A
• Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die
• Operating Temperature - Junction: -40°C ~ 175°C

SIC CHIP

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

DIODE GEN PURP 2.4KV 2650A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2400 V
• Current - Average Rectified (Io): 2650A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2500 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 mA @ 2400 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 180°C

DIODE GEN PURP 1.2KV 1050A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 1050A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 1000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 60 mA @ 1200 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 180°C

RECTIFIER DIODE, SCHOTTKY

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 3 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 15 µA @ 600 V
• Capacitance @ Vr, F: 60pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: PG-TO220-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE GEN PURP 2.2KV 6010A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2200 V
• Current - Average Rectified (Io): 6010A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 4000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 mA @ 2200 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AE
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 160°C

DIODE GEN PURP 1.8KV 1230A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1800 V
• Current - Average Rectified (Io): 1230A
• Voltage - Forward (Vf) (Max) @ If: 1.063 V @ 800 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 mA @ 1800 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AA, A-PUK
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 180°C

DIODE SIL CARB 650V 20A TO247-3

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 120 µA @ 650 V
• Capacitance @ Vr, F: 584pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-41
• Operating Temperature - Junction: -40°C ~ 175°C

DIODE SCHOTTKY 70V 70MA SOT23-3

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 70 V
• Current - Average Rectified (Io): 70mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 nA @ 50 V
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3-3
• Operating Temperature - Junction: 150°C

DIODE SCHOTTKY 70V 70MA SOT23-3

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 70 V
• Current - Average Rectified (Io): 70mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 nA @ 50 V
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3-3
• Operating Temperature - Junction: 150°C

INDUSTRY 14

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 100 A
• Speed: Fast Recovery =< 500ns, > 5A (Io)
• Reverse Recovery Time (trr): 98 ns
• Current - Reverse Leakage @ Vr: 20 µA @ 650 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: PG-TO247-2-2
• Operating Temperature - Junction: -40°C ~ 175°C

DIODE GEN PURP 4.5KV 1710A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 4500 V
• Current - Average Rectified (Io): 1710A
• Voltage - Forward (Vf) (Max) @ If: 4.2 V @ 2500 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AE
• Supplier Device Package: -
• Operating Temperature - Junction: 0°C ~ 140°C

DIODE SIL CARB 1.2KV 40A TO263-1

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
• Capacitance @ Vr, F: 730pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-2-1
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE GP 600V 10450A D-ELEM-1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 10450A
• Voltage - Forward (Vf) (Max) @ If: 980 mV @ 6000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40 mA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: BG-D-ELEM-1
• Operating Temperature - Junction: 180°C (Max)

DIODE SIL CARBIDE 650V 6A VSON-4

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 110 µA @ 650 V
• Capacitance @ Vr, F: 190pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 4-PowerTSFN
• Supplier Device Package: PG-VSON-4
• Operating Temperature - Junction: -55°C ~ 150°C

DIODE GP 1.2KV 15A WAFER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 15 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3.5 µA @ 1200 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -40°C ~ 175°C

DIODE GEN PURP 1720A D10026K-1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): 1720A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 mA @ 4500 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200, Variant
• Supplier Device Package: BG-D10026K-1
• Operating Temperature - Junction: -40°C ~ 140°C

DIODE GEN PURP 1720A D10026K-1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): 1720A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 mA @ 4500 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200, Variant
• Supplier Device Package: BG-D10026K-1
• Operating Temperature - Junction: -40°C ~ 140°C

DIODE GP 1.2KV 50A WAFER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -40°C ~ 175°C

DIODE GEN PURP 600V 2450A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 2450A
• Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 mA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 180°C

DIODE SIL CARB 650V 29A HDSOP-10

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 29A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 33 µA @ 420 V
• Capacitance @ Vr, F: 495pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 10-PowerSOP Module
• Supplier Device Package: PG-HDSOP-10-1
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE E-EUPEC-0

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

DIODE GEN PURP 1.4KV 770A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1400 V
• Current - Average Rectified (Io): 770A
• Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 400 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30 mA @ 1400 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AA, A-PUK
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 180°C

DIODE GEN PURP 1KV 261A PB50ND-1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 261A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 mA @ 1000 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: BG-PB50ND-1
• Operating Temperature - Junction: -40°C ~ 135°C