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Infineon Technologies |
DIODE GEN PURP 600V 9A DIE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 9A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Operating Temperature - Junction: -40°C ~ 175°C
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600 V | 9A | 1.6 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | Surface Mount | Die | Die | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 9A DIE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 9A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
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600 V | 9A | 1.6 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | Surface Mount | Die | Die | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 800V 970A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 970A
- Voltage - Forward (Vf) (Max) @ If: 970 mV @ 750 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 180°C
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800 V | 970A | 970 mV @ 750 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 800 V | - | Clamp On | DO-200AA, A-PUK | - | -40°C ~ 180°C |
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Infineon Technologies |
DIODE GEN PURP 2.2KV 4810A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200 V
- Current - Average Rectified (Io): 4810A
- Voltage - Forward (Vf) (Max) @ If: 1.078 V @ 4000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 mA @ 2200 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AE
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Stock6 |
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2200 V | 4810A | 1.078 V @ 4000 A | Standard Recovery >500ns, > 200mA (Io) | - | 200 mA @ 2200 V | - | Chassis Mount | DO-200AE | - | -40°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 2.6KV 690A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2600 V
- Current - Average Rectified (Io): 690A
- Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 3000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 9 µs
- Current - Reverse Leakage @ Vr: 25 mA @ 2600 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
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2600 V | 690A | 2.7 V @ 3000 A | Standard Recovery >500ns, > 200mA (Io) | 9 µs | 25 mA @ 2600 V | - | Clamp On | DO-200AB, B-PUK | - | -40°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 6.5KV 1100A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 6500 V
- Current - Average Rectified (Io): 1100A
- Voltage - Forward (Vf) (Max) @ If: 5.6 V @ 2500 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 mA @ 6500 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AE
- Supplier Device Package: -
- Operating Temperature - Junction: 0°C ~ 140°C
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Package: - |
Stock6 |
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6500 V | 1100A | 5.6 V @ 2500 A | Standard Recovery >500ns, > 200mA (Io) | - | 150 mA @ 6500 V | - | Chassis Mount | DO-200AE | - | 0°C ~ 140°C |
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Infineon Technologies |
DIODE GEN PURP 2.4KV 820A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2400 V
- Current - Average Rectified (Io): 820A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 750 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 mA @ 2400 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 180°C
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Package: - |
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2400 V | 820A | 1.25 V @ 750 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 2400 V | - | Clamp On | DO-200AA, A-PUK | - | -40°C ~ 180°C |
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Infineon Technologies |
DIODE SIL CARB 650V 12A TO263-2
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: 360pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock1,584 |
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650 V | 12A | 1.8 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | - | 360pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SIL CARB 600V 10A TO220-2
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 140 µA @ 600 V
- Capacitance @ Vr, F: 480pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
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600 V | 10A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 600 V | 480pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GP 1.2KV 150A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 150 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 26 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
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1200 V | 150A | 2.05 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 26 µA @ 1200 V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.4KV 735A MODULE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400 V
- Current - Average Rectified (Io): 735A
- Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 mA @ 1400 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
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1400 V | 735A | 1.4 V @ 2200 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 1400 V | - | Chassis Mount | Module | Module | -40°C ~ 150°C |
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Infineon Technologies |
DIODE GP 1.8KV 255A DSW27-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800 V
- Current - Average Rectified (Io): 255A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: BG-DSW27-1
- Supplier Device Package: BG-DSW27-1
- Operating Temperature - Junction: -40°C ~ 180°C
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Package: - |
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1800 V | 255A | - | Standard Recovery >500ns, > 200mA (Io) | - | 30 mA @ 1800 V | - | Stud Mount | BG-DSW27-1 | BG-DSW27-1 | -40°C ~ 180°C |
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Infineon Technologies |
DIODE GEN PURP 1.8KV 255A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800 V
- Current - Average Rectified (Io): 255A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 180°C
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Package: - |
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1800 V | 255A | - | Standard Recovery >500ns, > 200mA (Io) | - | 30 mA @ 1800 V | - | Stud Mount | DO-205AA, DO-8, Stud | - | -40°C ~ 180°C |
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Infineon Technologies |
DIODE SIL CARB 650V 2A TO220-2
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: 70pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock1,500 |
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650 V | 2A | 1.7 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | - | 70pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GP 2.5KV 255A DSW271-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2500 V
- Current - Average Rectified (Io): 255A
- Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 800 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4 µs
- Current - Reverse Leakage @ Vr: 5 mA @ 2500 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: Stud
- Supplier Device Package: BG-DSW271-1
- Operating Temperature - Junction: 140°C (Max)
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Package: - |
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2500 V | 255A | 2.3 V @ 800 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 5 mA @ 2500 V | - | Stud Mount | Stud | BG-DSW271-1 | 140°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 800V 650A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 650A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 450 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 180°C
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Package: - |
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800 V | 650A | 950 mV @ 450 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 800 V | - | Clamp On | DO-200AA, A-PUK | - | -40°C ~ 180°C |
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Infineon Technologies |
DISCRETE DIODES
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 248pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-2
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock564 |
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650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 248pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | PG-TO263-2 | -40°C ~ 175°C |
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Infineon Technologies |
STD THYR/DIODEN DISC
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE GP 2.6KV 1070A MODULE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2600 V
- Current - Average Rectified (Io): 1070A
- Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 3400 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 mA @ 2600 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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2600 V | 1070A | 1.52 V @ 3400 A | Standard Recovery >500ns, > 200mA (Io) | - | 150 mA @ 2600 V | - | Chassis Mount | Module | Module | -40°C ~ 150°C |
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Infineon Technologies |
DIODE SIL CARB 650V 43A HDSOP-10
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 43A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 53 µA @ 420 V
- Capacitance @ Vr, F: 783pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 10-PowerSOP Module
- Supplier Device Package: PG-HDSOP-10-1
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock14,319 |
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650 V | 43A | - | No Recovery Time > 500mA (Io) | 0 ns | 53 µA @ 420 V | 783pF @ 1V, 1MHz | Surface Mount | 10-PowerSOP Module | PG-HDSOP-10-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.6KV 104A PB20-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 104A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB20-1
- Operating Temperature - Junction: -40°C ~ 135°C
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Package: - |
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1600 V | 104A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1600 V | - | Chassis Mount | Module | BG-PB20-1 | -40°C ~ 135°C |
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Infineon Technologies |
LED PX3244HDMG008XTMA1
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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Infineon Technologies |
SIC CHIP
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE SIL CARB 600V 3A TO220-22
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 30 µA @ 600 V
- Capacitance @ Vr, F: 90pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: PG-TO220-2-22
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
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600 V | 3A (DC) | 1.9 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 600 V | 90pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | PG-TO220-2-22 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 9A DIE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 9A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Request a Quote |
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600 V | 9A | 1.6 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | Surface Mount | Die | Die | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GP 1.7KV 200A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1700 V
- Current - Average Rectified (Io): 200A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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1700 V | 200A | 1.8 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1700 V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
IC AC/DC DGTL PLATFORM 16SOIC
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE SIL CARB 650V 12A VSON-4
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 190 µA @ 650 V
- Capacitance @ Vr, F: 360pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 4-PowerTSFN
- Supplier Device Package: PG-VSON-4
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock45,780 |
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650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 650 V | 360pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |