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Infineon Technologies |
DIODE SIL CARB 650V 10A VSON-4
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 180 µA @ 650 V
- Capacitance @ Vr, F: 300pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 4-PowerTSFN
- Supplier Device Package: PG-VSON-4
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock3,969 |
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650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 300pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.8KV 600A MODULE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800 V
- Current - Average Rectified (Io): 600A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Stock33 |
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1800 V | 600A | - | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 1800 V | - | Chassis Mount | Module | Module | -40°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 30V 500MA SC79-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300 µA @ 30 V
- Capacitance @ Vr, F: 15pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: PG-SC79-2
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Stock42,630 |
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30 V | 500mA | 500 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 300 µA @ 30 V | 15pF @ 5V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | -55°C ~ 125°C |
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Infineon Technologies |
DIODE GEN PURP 4.5KV 1630A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4500 V
- Current - Average Rectified (Io): 1630A
- Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 2500 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AD
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 140°C
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Package: - |
Request a Quote |
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4500 V | 1630A | 2.6 V @ 2500 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 mA @ 4500 V | - | Chassis Mount | DO-200AD | - | -40°C ~ 140°C |
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Infineon Technologies |
DIODE GP 2.2KV 1030A D5726K-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200 V
- Current - Average Rectified (Io): 1030A
- Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 1000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: BG-D5726K-1
- Operating Temperature - Junction: 160°C (Max)
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Package: - |
Request a Quote |
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2200 V | 1030A | 1.11 V @ 1000 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 2200 V | - | Clamp On | DO-200AB, B-PUK | BG-D5726K-1 | 160°C (Max) |
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Infineon Technologies |
HOME APPLIANCES 14
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 89 ns
- Current - Reverse Leakage @ Vr: 20 µA @ 650 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: PG-TO247-2-2
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock720 |
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650 V | 50A | 2.1 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 89 ns | 20 µA @ 650 V | - | Through Hole | TO-247-2 | PG-TO247-2-2 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GP 80V 250MA SOT23-3-11
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io): 250mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 75 V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3-11
- Operating Temperature - Junction: 150°C
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Package: - |
Request a Quote |
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80 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 1 µA @ 75 V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3-11 | 150°C |
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Infineon Technologies |
DIODE GP 80V 250MA SOT23-3-11
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io): 250mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 75 V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3-11
- Operating Temperature - Junction: 150°C
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Package: - |
Request a Quote |
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80 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 1 µA @ 75 V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3-11 | 150°C |
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Infineon Technologies |
INDUSTRY 14
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock720 |
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- | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE GEN PURP 600V 8320A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 8320A
- Voltage - Forward (Vf) (Max) @ If: 795 mV @ 4000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 mA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AD
- Supplier Device Package: -
- Operating Temperature - Junction: -25°C ~ 150°C
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Package: - |
Request a Quote |
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600 V | 8320A | 795 mV @ 4000 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 mA @ 600 V | - | Chassis Mount | DO-200AD | - | -25°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 4.5KV 1450A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4500 V
- Current - Average Rectified (Io): 1450A
- Voltage - Forward (Vf) (Max) @ If: 4.2 V @ 2500 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AD
- Supplier Device Package: -
- Operating Temperature - Junction: 0°C ~ 140°C
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Package: - |
Request a Quote |
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4500 V | 1450A | 4.2 V @ 2500 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 mA @ 4500 V | - | Chassis Mount | DO-200AD | - | 0°C ~ 140°C |
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Infineon Technologies |
DIODE SCHOTTKY 30V 200MA SOT23
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 25 V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock73,947 |
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30 V | 200mA | 800 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 2 µA @ 25 V | 10pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23 | 150°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 2.2KV 1030A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200 V
- Current - Average Rectified (Io): 1030A
- Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 10000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 160°C
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Package: - |
Request a Quote |
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2200 V | 1030A | 1.11 V @ 10000 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 2200 V | - | Clamp On | DO-200AB, B-PUK | - | -40°C ~ 160°C |
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Infineon Technologies |
DIODE SIC 1.2KV 11.8A TO263-1
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 11.8A
- Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
- Capacitance @ Vr, F: 182pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-2-1
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock2,664 |
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1200 V | 11.8A | 1.65 V @ 2 A | No Recovery Time > 500mA (Io) | - | 18 µA @ 1200 V | 182pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | PG-TO263-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GP 650V 42A TO247-3-AI
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 42A
- Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 76 ns
- Current - Reverse Leakage @ Vr: 40 µA @ 650 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-AI
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock720 |
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650 V | 42A | 2.1 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 76 ns | 40 µA @ 650 V | - | Through Hole | TO-247-3 | PG-TO247-3-AI | -40°C ~ 175°C |
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Infineon Technologies |
STD THYR/DIODEN DISC
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE SIL CARB 650V 12A TO247-3
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 70 µA @ 650 V
- Capacitance @ Vr, F: 363pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-41
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Request a Quote |
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650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 363pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 15A DIE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Request a Quote |
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600 V | 15A | 1.95 V @ 15 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | Surface Mount | Die | Die | -40°C ~ 175°C |
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Infineon Technologies |
DIODE SIL CARBIDE 650V 4A VSON-4
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 70 µA @ 650 V
- Capacitance @ Vr, F: 130pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 4-PowerTSFN
- Supplier Device Package: PG-VSON-4
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock10,341 |
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650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 130pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.4KV 104A PB34-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400 V
- Current - Average Rectified (Io): 104A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB34-1
- Operating Temperature - Junction: -40°C ~ 135°C
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Package: - |
Request a Quote |
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1400 V | 104A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1400 V | - | Chassis Mount | Module | BG-PB34-1 | -40°C ~ 135°C |
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Infineon Technologies |
DIODE GEN PURP 600V 6A DIE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Request a Quote |
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600 V | 6A | 1.6 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | Surface Mount | Die | Die | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GP 600V 6A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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600 V | 6A | 1.6 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 2.8KV 4810A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2800 V
- Current - Average Rectified (Io): 4810A
- Voltage - Forward (Vf) (Max) @ If: 1.078 V @ 4000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 mA @ 2800 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AE
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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2800 V | 4810A | 1.078 V @ 4000 A | Standard Recovery >500ns, > 200mA (Io) | - | 200 mA @ 2800 V | - | Chassis Mount | DO-200AE | - | -40°C ~ 150°C |
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Infineon Technologies |
LED PX8244HDMG008XTMA1
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE GP 600V 150A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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600 V | 150A | 1.25 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 3.6KV 270A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3600 V
- Current - Average Rectified (Io): 270A
- Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 250 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 3600 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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3600 V | 270A | 1.36 V @ 250 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 3600 V | - | Clamp On | DO-200AB, B-PUK | - | -40°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 200V 650A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 650A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 450 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 180°C
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Package: - |
Request a Quote |
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200 V | 650A | 950 mV @ 450 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 200 V | - | Clamp On | DO-200AA, A-PUK | - | -40°C ~ 180°C |
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Infineon Technologies |
DIODE GP 4.5KV 1710A D10026K-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4500 V
- Current - Average Rectified (Io): 1710A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200, Variant
- Supplier Device Package: BG-D10026K-1
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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4500 V | 1710A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis Mount | DO-200, Variant | BG-D10026K-1 | - |
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